• 한국표면공학회지
• /
• 제38권5호
• /
• pp.202-206
• /
• 2005

Nitriding treatments were conducted on tool steel (SKD 61) at a temperature of $500^{\circ}C$ for 5 hr using high vacuum direct current (DC) plasma, with ammonia and argon as source gases. The structural and compositional changes produced in the nitrided layers by applying different ratios of Ar to $NH_{3}\;(n_{Ar}/n_{NH3}) were investigated using glancing x-ray diffraction (GXRD), optical microscopy, atomic force microscopy (AFM), micro-Vickers hardness testing, and pin-on-disc type tribometer. Nitriding case depths of around of $50{\mu}m$ were produced, varying slightly with different ratios of $n_{Ar}/n_{NH3}. It was found that the specimen surface hardness was 1150 Hv with $n_{Ar}/n_{NH3}=1, increasing to a maximum value of 1500 Hv with $n_{Ar}/n_{NH3}=5. With a further increase in ratio to $n_{Ar}/n_{NH3}=10, the surface hardness of the specimen reduced slightly to a value of 1370 Hv. These phenomena were caused by changes of the crystallographic structure of the nitride layers, i.e the $\gamma'-Fe_{4}N$ phase only was observed in the sample treated with $n_{Ar}/n_{NH3}$=1, and the intensity of the $\gamma'-Fe_{4}N$ phase were reduced but new phase of $\varepsilon'-Fe_{3}N$, which was known as a high hardness, with increasing $n_{Ar}/n_{NH3}. Also, the relative weight loss of counterface of the pin-on-disc with unnitrided steel was 0.2. And that of nitrided steel at a gas mixture ($n_{Ar}/n_{NH3}) of 1, 5, 7, and 10 was 0.4, 0.7, 0.6, and 0.5 mg, respectively. This means that the wear resistance of the nitrided samples could be increased by a factor of 2 at least than that of unnitrided steel.

• Bulletin of the Korean Chemical Society
• /
• 제18권11호
• /
• pp.1158-1161
• /
• 1997

The potentiometric methods have been used to determined the protonation constants (logKiH) for the synthesized 1,7,13-trioxa-4,10,16-triazacyclooctadecane-N,N',N''-tri(methylacetic acid) [N3O3-tri(methylacetic acid)] and the stability constants (logKML) of the complexes of divalent and trivalent metal ions with the ligand N3O3-tri(methylacetic acid). The protonation constants of N3O3-tri(methylacetic acid) were 9.70 for logK1H, 9.18 for logK2H, 7.27 for logK3H, 3.38 for logK4H, and 2.94 for logK5H. The stability constants for the complexes of divalent metal ions with N3O3-tri(methylacetic acid) were 10.39 for Co2+, 10.68 for Ni2+, 13.45 for Cu2+, and 13.00 for Zn2+. The order of the stability constants for the complexes of the divalent metal ions with N3O3-tri(methylacetic acid) was Co2+ < Ni2+ < Zn2+ < Cu2+. The stability constants for the complexes of trivalent metal ions with N3O3-tri(methylacetic acid) were 16.20 for Ce3+, 16.40 for Eu3+, 16.27 for Gd3+, and 15.80 for Yb3+. The results obtained in this study were compared to those obtained for similar ligands, 1,7-dioxa-4,10,13-triazacyclopentadecane-N,N',N"-tri(methylacetic acid) and 1,7,13-trioxa-4,10,16-triazacyclooctadecane-N,N',N"-triacetic acid, which have been previously reported.

• 한국정보통신학회:학술대회논문집
• /
• 한국해양정보통신학회 2008년도 추계종합학술대회 B
• /
• pp.285-288
• /
• 2008

기계 학습을 응용한 많은 침입 탐지 시스템들은 n-그램 접근 방법을 주로 쓰고 있다. 그러나, n-그램 접근 방법은 주어진 시퀀스에서 획득한 n-그램들이 서로 겹치는 문제들을 가지고 있다. 본 연구에서는 이러한 문제들을 해결하기 위해, n-그램 증강 나이브 베이스 (n-gram augmented naive Bayes) 알고리즘을 침입 시퀀스의 분류에 적용하였다. 제안된 시스템의 성능을 평가하기 위해 n-그램 특징들을 사용하는 일반 나이브 베이스 (naive Bayes) 알고리즘과 서포트 벡터 머신 (support vector machines) 알고리즘과 본 연구에서 제안한 n-그램 증강 나이브 베이스 알고리즘을 비교하였다. 뉴 멕시코 대학의 벤치마크 데이터에 적용해 본 결과에 따르면, n-그램 증강 방법이, n-그램이 나이브 베이스에 직접 적용되는 경우(예: n-그램 특징을 사용하는 일반 나이브 베이스), 생기는 독립성 가정에 대한 위배 문제도 해결하면서, 동시에 n-그램 특징을 사용하는 일반 나이브 베이스보다 더 정확하며, n-그램 특징을 사용하는 SVM과 필적할만한 수준의 침입 탐지기를 생성해 내었다.

• 대한화학회지
• /
• 제25권6호
• /
• pp.383-389
• /
• 1981

티안트렌 양이온 자유라디칼 과염소산염은 p-톨루엔술포아니리드, 벤젠술폰아니리드, N-(2-메틸페닐)벤젠술폰아미드, N-페닐-p-톨루엔술폰아닐리드와 같은 N-아릴술폰아미드와 반응하여 각각 5-(p-N-p-톨루엔술폰아미도페닐)티안트렌이움 과염소산염(1a), 5-(p-N-벤젠술폰아미도페닐)티안트렌이움 과연소산염(1b), 5-(4-N-벤젠술폰아미도-3-메틸페닐)티안트렌이움 과염소산염(1c), 5-(p-N-페닐-N-p-톨루엔술폰아미도페닐)티안트렌이움 과염소산염(1d)을 준다. 한편 1d는 티안트렌 양이온 자유라디칼과 다시 반응하여 이과염소산염(1e)을 생성한다. 1a∼1e의 구조는 아세트아니리드와의 반응생성물인 5-(p-아세트아미도페닐)티안트렌이움 과염소산염과 매우 비슷하다. 그러나 두 반응의 양 관계에서 상이한 점은 술폰아미드와의 반응이 단일 메카니즘으로 진행되지 않음을 암시한다.

• 조명전기설비학회논문지
• /
• 제16권1호
• /
• pp.106-113
• /
• 2002

본 연구는 방전쳄버내에 각종 가스의 압력(58.8-137.3[kPa]) 변화에 따른 순수가스인 Kr, Ar 및 $N_2$가스의 절연 특성을 조사하고, 혼합가스인 Ar/$N_2$및 Kr/$N_2$가스의 절연 특성과 비교하였다. 또한, 실용 백열전구내의 혼합가스에 위한 각종 특성을 조사하였다. 실험 결과, $N_2$가스의 압력변화에 따른 절연 특성은 큰 분자량을 가진 Kr 및 Ar가스에 비하여 증가되었으며, 가스의 압력이 증가됨에 따라 절인파괴전압은 증가되었다. Ar/$N_2$및 Kr/$N_2$가스의 절연파괴전압은 $N_2$가스의 혼합비가 적을수록 감소되었으며, Kr(70%)$N_2$(30%)가스의 코로나개시전압은 Ar(70%)/$N_2$(30%)가스에 비해 증가되었다. 일반 백열전구에 Ar(70%)/$N_2$(30%)가스인 경우에 비해, Kr(70%)/$N_2$(30%)가스에서 광속과 수명이 대략 94[lm] 및 380[hr]으로 증가되었다. 백열전구내의 냉각온도가 20[$^{\circ}C$]일 때 혼합가스 주입압력은 40[$^{\circ}C$])에 비해 대략 13[%] 증가되었다.

• 한국재료학회지
• /
• 제28권4호
• /
• pp.241-246
• /
• 2018

$TaN_x$ film is grown by plasma enhanced atomic layer deposition (PEALD) using t-butylimido tris(dimethylamido) tantalum as a metalorganic source with various reactive gas species, such as $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. Although the pulse sequence and duration are the same, aspects of the film growth rate, microstructure, crystallinity, and electrical resistivity are quite different according to the reactive gas. Crystallized and relatively conductive film with a higher growth rate is acquired using $NH_3$ as a reactive gas while amorphous and resistive film with a lower growth rate is achieved using $N_2+H_2$ mixed gas. To examine the relationship between the chemical properties and resistivity of the film, X-ray photoelectron spectroscopy (XPS) is conducted on the ALD-grown $TaN_x$ film with $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. For a comparison, reactive sputter-grown $TaN_x$ film with $N_2$ is also studied. The results reveal that ALD-grown $TaN_x$ films with $NH_3$ and $H_2$ include a metallic Ta-N bond, which results in the film's higher conductivity. Meanwhile, ALD-grown $TaN_x$ film with a $N_2+H_2$ mixed gas or sputtergrown $TaN_x$ film with $N_2$ gas mainly contains a semiconducting $Ta_3N_5$ bond. Such a different portion of Ta-N and $Ta_3N_5$ bond determins the resistivity of the film. Reaction mechanisms are considered by means of the chemistry of the Ta precursor and reactive gas species.

• 정보처리학회논문지A
• /
• 제14A권6호
• /
• pp.327-332
• /
• 2007

본 논문에서는 $2^{2n-k}{\times}2^k$ 토러스 연결망과 상호연결망 HFN(n,n)과 HCN(n,n) 사이의 임베딩을 분석한다. 먼저, $2^{2n-k}{\times}2^k$ 토러스를 HFN(n,n)에 연장율 3과 밀집율 4로 임베딩 가능함을 보이며, 평균연장율이 2 이하임을 증명한다. 그리고 $2^{2n-k}{\times}2^k$ 토러스를 HCN(n,n)에 연장율 3으로 임베딩 가능함을 보이며, 평균 연장율이 2 이하임을 증명한다. 또한 HFN(n,n)과 HCN(n,n)이 $2^{2n-k}{\times}2^k$ 토러스에 임베딩하는 연장율이 O(n)임을 보인다. 이러한 결과는 토러스에서 개발된 여러 가지 알고리즘을 HCN(n,n)과 HFN(n,n)에서 효율적으로 이용할 수 있음을 의미한다.

• 정보처리학회논문지A
• /
• 제16A권4호
• /
• pp.299-306
• /
• 2009

계층적 폴디드 하이퍼스타 네트워크는 동일한 노드 개수를 갖는 계층적 네트워크인 HCN(n,n)과 HFN(n,n)보다 망비용이 우수한 연결망이다. 본 연구에서는 하이퍼큐브, HCN(n,n), HFN(n,n)과 계층적 폴디드 하이퍼스타 HFH($C_n,C_n$) 사이의 임베딩을 분석한다. 임베딩 결과는 HCN(n,n), HFN(n,n), 하이퍼큐브 $Q_{2n}$은 계층적 폴디드 하이퍼스타 HFH($C_n,C_n$)에 확장율 $\frac{C^n}{2^{2n}}$과 연장율 2, 3, 4로 각각 임베딩 가능하다. 또한, 계층적 폴디드 하이퍼스타 HFH($C_n,C_n$)는 계층적 네트워크인 HFN(2n,2n)에 연장율 1에 임베딩 가능하다. 이러한 임베딩 결과는 하이퍼큐브, HCN(n,n), HFN(n,n)에서 개발된 알고리즘을 계층적 폴디드 하이퍼스타 HFH($C_n,C_n$)에서 효율적으로 활용 가능함을 의미한다.

• 반도체디스플레이기술학회지
• /
• 제20권3호
• /
• pp.167-171
• /
• 2021

The core-shell InGaN/GaN Multi Quantum Well-Nanowires (MQW-NWs) that were selectively grown on oxide templates with perfectly circular hole patterns were highly crystalline and were shaped as high-aspect-ratio pyramids with semi-polar facets, indicating hexagonal symmetry. The formation of the InGaN active layer was characterized at its various locations for two types of the substrates, one containing defect-free MQW-NWs with GQDs and the other containing MQW-NWs with defects by using HRTEM. The TEM of the defect-free NW showed a typical diode behavior, much larger than that of the NW with defects, resulting in stronger EL from the former device, which holds promise for the realization of high-performance nonpolar core-shell InGaN/GaN MQW-NW substrates. These results suggest that well-defined nonpolar InGaN/GaN MQW-NWs can be utilized for the realization of high-performance LEDs.

• 약학회지
• /
• 제52권1호
• /
• pp.20-26
• /
• 2008

2-Aminothiazole ring as a bioisoster of catechol in dopamine has provided with good oral availability and lipophilic property. Selenium was reported to have an improved antioxidant ability and to reduce the loss of dopamine. 2-Aminoindan, is a rigid form of dopamine, was evaluated as a dopamine agonist with low neurotoxocity. In order to develop a novel dopamine agonist, we tried to synthesize the selenazoloaminoindan derivative that is a hybrid structure of aminoindan and aminoselenazole instead of aminothiazole. 2-Indanone-2-oxime was reduced with $TiCl_4$ and $NaBH_4$ to form 2-aminoindan, which was reacted with propionyl chloride to give 2-N-n-propionylaminoindan (2). Compound 2 was reduced with $TiCl_4$ and $NaBH_4$ to afford 2-N-n-propylaminoindan (3) and it was nitrated and reduced to form 5-amino-2-N-n-propylaminoindan (5), which was reacted with KSeCN, $Br_2$, and glacial acetic acid to give 4,6-dibromo-5- amino-2-N-n-propylaminoindan (7) instead of selenazole ring formation. Otherwise, compound 2 was nitrated and hydrogenated to form 5-amino-2-N-n-propionylaminoindan (9), which was treated with KSeCN, $Br_2$, and glacial acetic acid to give 4,6-dibromo-5-amino-2-N-n-propionylaminoindan (10). Compound 9 was cyc1ized with KSeCN and glacial acetic acid in the absence of $Br_2$ to give 6-amino-2-N-(n-propionylamino)selenazolo[4,5-f]indan (11).