• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.785-789
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• 2013

Silicon Carbide (SiC) is the material with the wide band-gap (3.26 eV), high critical electric field (~2.3 MV/cm), and high bulk electron mobility (~900 $cm^2/Vs$). These electronic properties allow attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. In general, device design has a significant effect on the switching and electrical characteristics. It is known that in this paper, we demonstrated that the switching performance and breakdown voltage of IGBT is dependent with doping concentration of p-base region and drift layer by using 2-D simulations. As a result, electrical characteristics of SiC-IGBT deivce is higher breakdown voltage ($V_B$= 1,600 V), lower on-resistance ($R_{on}$= 0.43 $m{\Omega}{\cdot}cm^2$) than Si-IGBT. Also, we determined that processing time and cost is reduced by the depth of n-drift region of IGBT was reduced.

• Journal of Sensor Science and Technology
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• v.9 no.2
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• pp.113-119
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• 2000

In this work, Pd/Pt gate MISFET sensor using Pd membrane was fabricated to detect the hydrogen in DI water. A differential pair-type was used to minimize the intrinsic voltage drift of the MISFET. To avoid hydrogen induced drift of the sensor, the silicon dioxide/silicon nitride double layer was used as the gate insulator of the FET's. In order to eliminate the blister formation on the surface of the hydrogen sensing gate metal, Pd/Pt double metal layer was deposited on the gate insulator. For this type of application sensors need to be isolated from the DI water, and a Pd membrane was used to separate the sensor from the DI water. The output voltage change due to the variation of hydrogen concentration is linear from 100ppm to 500 ppm.

• Journal of Astronomy and Space Sciences
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• v.36 no.2
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• pp.61-68
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• 2019

We have investigated the variations of sporadic E (Es) layer using the measurements of digisondes at Icheon ($37.14^{\circ}N$, $127.54^{\circ}E$, IC) and Jeju ($33.4^{\circ}N$, $126.30^{\circ}E$, JJ) in 2011-2018. The Es occurrence rate and its critical frequency (foEs) have peak values in summer at both IC and JJ in consistent with their known seasonal variations at mid-latitudes. The virtual height of the Es layer (h'Es) during equinox months is greater than that in other months. It may be related to the similar variation of meteor peak heights. The h'Es shows the semidiurnal variations with two peaks at early in the morning and late in the afternoon during equinoxes and summer. However, the semi-diurnal variation is not obvious in winter. The semi-diurnal variation is generally thought to be caused by the semi-diurnal tidal variation in the neutral wind shear, whose measurements, however, are rare and not available in the region of interest. To investigate the formation mechanism of Es, we have derived the vertical ion drift velocity using the Horizontal Wind Model (HWM) 14, International Geomagnetic Reference Field, and Naval Research Laboratory Mass Spectrometer and Incoherent Scatter Radar-00 models. Our results show that h'Es preferentially occur at the altitudes where the direction of the vertical ion velocity changes. This result indicates the significant role of ion convergence in the creation of Es.

• ETRI Journal
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• v.34 no.6
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• pp.962-965
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• 2012

In this letter, we propose a new RESURF stepped oxide (RSO) process to make a semi-superjunction (semi-SJ) trench double-diffused MOSFET (TDMOS). In this new process, the thick single insulation layer ($SiO_2$) of a conventional device is replaced by a multilayered insulator ($SiO_2/SiN_x/TEOS$) to improve the process and electrical properties. To compare the electrical properties of the conventional RSO TDMOS to those of the proposed TDMOS, that is, the nitride_RSO TDMOS, simulation studies are performed using a TCAD simulator. The nitride_RSO TDMOS has superior properties compared to those of the RSO TDMOS, in terms of drain current and on-resistance, owing to a high nitride permittivity. Moreover, variations in the electrical properties of the nitride_RSO TDMOS are investigated using various devices, pitch sizes, and thicknesses of the insulator. Along with an increase of the device pitch size and the thickness of the insulator, the breakdown voltage slowly improves due to a vertical field plate effect; however, the drain current and on-resistance degenerate, owing to a shrinking of the drift width. The nitride_RSO TDMOS is successfully fabricated, and the blocking voltage and specific on-resistance are 108 V and $1.1m{\Omega}cm^2$, respectively.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.8B
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• pp.1469-1476
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• 2000

We have to consider the drain current as consisting of two components the vertical electric field and the longitudinal electric field because the drain current is almost totally due to the presence of drift in strong inversion of n-MOS FET. Especially the mobility of electrons in the inversion layer is smaller than the bulk mobility because the vertical electric field component that is generated by the effect of the gate voltage is perpendicular to the direction of normal current flow. By the multi-box segmentation technical method that are proposed in this paper we calculated the inversion layer depth and analyzed the vertical electric field component which has an large influence on mobility model.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.2
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• pp.75-78
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• 2016

This research was designed 700 level power MOSFET for smart LED driver ICs package. And we analyzed electrical characteristics of the power MOSFET as like breakdown voltage, on-resistance and threshold voltage. Because this research is important optimal design for smart LED ICs package, we designed power MOSFET with design and process parameter. As a result of this research, we obtained $60{\mu}m$ N-drift layer depth, 791.29 V breakdown voltage, $0.248{\Omega}{\cdot}cm^2$ on resistance and 3.495 V threshold voltage. We will use effectively this device for smart LED driver ICs package.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.37-38
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• 2009

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. It is known that in SiC power MOSFET, the JFET region width is one of the most important parameters. In this paper, we demonstrated that the switching performance of DMOSFET is dependent on the with width of the JFET region by using 2-D Mixed-mode simulations. The 4H-SiC DMOSFETs with a JFET region designed to block 800 V were optimized for minimum loss by adjusting the parameters of the n JFET region, CSL, and n-drift layer. It has been found that the JFET region reduces specific on-resistance and therefore the switching characteristics depend on the JFET region.

• International Journal of Concrete Structures and Materials
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• v.9 no.4
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• pp.439-451
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• 2015

This study analyzed the isolation effect for a 15-story reinforced concrete (RC) building with regard to changes in the beam-column stiffness ratio and the difference in the vibration period between the superstructure and an isolation layer in order to provide basic data that are needed to devise a framework for the design of isolated RC buildings. First, this analytical study proposes to design RC building frames by securing an isolation period that is at least 2.5 times longer than the natural vibration period of a superstructure and configuring a target isolation period that is 3.0 s or longer. To verify the proposed plan, shaking table tests were conducted on a scaled-down model of 15-story RC building installed with laminated rubber bearings. The experimental results indicate that the tested isolated structure, which complied with the proposed conditions, exhibited an almost constant response distribution, verifying that the behavior of the structure improved in terms of usability. The RC building's response to inter-story drift (which causes structural damage) was reduced by about one-third that of a non-isolated structure, thereby confirming that the safety of such a superstructure can be achieved through the building's improved seismic performance.

• ETRI Journal
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• v.35 no.4
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• pp.632-637
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• 2013

In this paper, we propose a superjunction trench gate MOSFET (SJ TGMOSFET) fabricated through a simple p-pillar forming process using deep trench and boron silicate glass doping process technology to reduce the process complexity. Throughout the various boron doping experiments, as well as the process simulations, we optimize the process conditions related with the p-pillar depth, lateral boron doping concentration, and diffusion temperature. Compared with a conventional TGMOSFET, the potential of the SJ TGMOSFET is more uniformly distributed and widely spread in the bulk region of the n-drift layer due to the trenched p-pillar. The measured breakdown voltage of the SJ TGMOSFET is at least 28% more than that of a conventional device.

• Journal of the Korean Wood Science and Technology
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• v.42 no.3
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• pp.258-265
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• 2014

By replacing the previous metal connector on the joints of timber structure, the GFRP reinforced laminated wooden pin was produced using a wooden material and Glass fiber reinforced plastic(GFRP) composite laminate. In addition, using the reinforced wooden pin, the tensile type shear strength test was conducted. Based on the result of the bending strength test of the reinforced laminated wooden pin according to the GFRP arrangement, a specimen(Type-A) with a single insertion of GFRP for each layer have shown the most favorable performance. Also, it was verified that densified specimen hot pressed for an hour at the temperature of $150^{\circ}C$ and with the oppression pressure $1.96N/mm^2$ have shown the improved performance of 1.57 times than the specimen without the densification. And in the bending strength test considering the load direction, edgewise have shown a higher performance of 3.51 times than the flatwise. A shear strength test was conducted using the Type-A reinforced laminated wooden pin which have shown a moderate performance on the test. Based on the test conducted by differentiating the type of the joint plate and the connector, compared to the specimen(Type-DS) applied with the drift pin and steel plate, the specimen( Type-WL) applied with the GFRP reinforced laminated wooden pin and GFRP reinforced wooden laminated plate have shown 1.12 times higher shear strength and also have shown an excellent toughness even after the maximum load.