• 반도체디스플레이기술학회지
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• 제10권2호
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• pp.65-71
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• 2011

Properties of each layer in DSSC were investigated to improve solar cell characterstics. Also in this study, low costsolar simulator system is fabricated and used. Efficiency of DSSC is better in the case of thinner semiconductive layer, because thick semiconductive layer is acted as resistor. Sc-doped ZnO thin films showed better electrical property by proper donor doping effect. Among the dyes, DSSC containing N719 showed higher efficiency, because N719 have smaller electron affinity and shallow band gap.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.459-460
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• 2006

N-type $Bi_2Te_3-Sb_2Te_3$ solid solutions doped with 1$CdCl_2$ was prepared by melt spinning, crushing and vacuum sintering processes. Microstructure, bending strength and thermoelectric property were investigated as a function of the doping quantity from 0.03wt.% to 0.10wt.% and sintering temperature from $400^{\circ}C$ to $500^{\circ}C$, and finally compared with those of conventionally fabricated alloys. The alloy showed a good structural homogeneity as well as bending strength of $3.88Kgf/mm^2$. The highest thermoelectric figure of merit was obtained by doping 0.03wt.% and sintering at $500^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.476-477
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• 2013

반도체의 성능은 최근 10년 사이에 급격하게 발전했고 아날로그 및 디지털 회로 소자들에 있어 저전력/고속 특성 요구가 커지고 있다 [1]. 상온에서 30,000 $cm^2$/Vs 이상의 전자 이동도를 가지며 큰 conduction band offset을 갖는 InAs/AlSb 2차원전자가스(2DEG) 소자는 Spinorbit-interaction의 값이 매우 커서 SPIN-FET 소자로 크게 주목받고 있다 [2]. 본 발표자들은 GaAs 기판위에 성장한 InAs 2DEG HEMT 소자의 전/자기적인 특성과 고속반응 물질로 주목 받는 InSb 박막소자의 doping 특성에 따른 전기적/물리적인 특성의 평가에 대해 그 결과를 소개하고자 한다. 격자정합과 Semi-insulating 기판의 부재로 상용화되어 있는 GaAs와 InP 기판위에 물질차이에 따른 고유의 한계 특성을 줄이기 위한 Pseudomorphic이라 불리는 특별한 박막 성장 기법을 적용하여 높은 전자 이동도를 가지며 spin length가 길어 Spin-FET로서 크게 주목받고 있는 InAs 2DEG HEMT 소자를 완성시켰다. 60,000 ($cm^2$/Vs) 이상의 높은 전자 이동도를 갖는 소자의 구현을 목표로 연구를 진행하였으며 1.8 K에서 측정된 Spin-orbit interaction의 값은 6.3e-12 (eVm)이다. InAs/InGaAs/InAlAs 및 InGaAs/InAlAs 구조의 InP 기반의 소자에서 보다 큰 값으로 향후 Spin-FET 응용에 크게 기대하고 있다. 또한, GaAs 기판위에 구현된 InSb 소자는 격자부정합 감소를 위해 InAs 양자점을 사용하여 약 $2.6{\mu}m$ 두께로 구현된 InSb 박막 소자는 상온에서 약 60,400 ($cm^2$/Vs)의 상온 전자이동도를 보였으며 현재 동일 두께에서 세계 최고결과(~50,000 $cm^2$/Vs)에 비해 월등하게 높은 값을 보이고 있다. Hall bar pattern 공정을 거쳐 완성된 소자는 측정 결과 10~20% 이상 향상된 전자 이동도를 보였다. 2e18/$cm^3$ 미만의 p-doping의 경우, 상온에서 n-type 특성을 보이나, 저온에서 p-type으로 변하는 특성을 보였고 n-doping의 경우 5e17/$cm^3$까지는 전자 이동도만 감소하고, doping에 의한 효과는 크게 없었다. 1e18/$cm^3$의 높은 doping을 할 경우 carrier가 증가하는 것을 확인했다. 이상의 측정 결과로 Spin-FET 소자로서 아주 우수하다는 것을 확인할 수 있었고 n-/p- type이 특성을 고려한 high quality InSb 박막소자의 응용을 위한 중요한 정보를 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.294.1-294.1
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• 2016

Transition metal dichalcogenides (TMDs) with two-dimensional layered structure, such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2), are considered attractive materials for future semiconductor devices due to its relatively superior electrical, optical, and mechanical properties. Their excellent scalability down to a monolayer based on the van der Waals layered structure without surface dangling bonds makes semiconductor devices based on TMD free from short channel effect. In comparison to the widely studied transistor based on MoS2, researchs focusing on WSe2 transistor are still limited. WSe2 is more resistant to oxidation in humid ambient condition and relatively air-stable than sulphides such as MoS2. These properties of WSe2 provide potential to fabricate high-performance filed-effect transistor if outstanding electronic characteristics can be achieved by suitable metal contacts and doping phenomenon. Here, we demonstrate the effect of two different metal contacts (titanium and platinum) in field-effect transistor based on WSe2, which regulate electronic characteristics of device by controlling the effective barreier height of the metal-semiconductor junction. Electronic properties of WSe2 transistor were systematically investigated through monitoring of threshold voltage shift, carrier concentration difference, on-current ratio, and field-effect mobility ratio with two different metal contacts. Additionally, performance of transistor based on WSe2 is further enhanced through reliable and controllable n-type doping method of WSe2 by triphenylphosphine (PPh3), which activates the doping phenomenon by thermal annealing process and adjust the doping level by controlling the doping concentration of PPh3. The doping level is controlled in the non-degenerate regime, where performance parameters of PPh3 doped WSe2 transistor can be optimized.

• 한국재료학회지
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• 제22권8호
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• pp.439-444
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• 2012

To compare the photocatalytic performances of titania for purification of waste water according to applied voltages and doping, $TiO_2$ films were prepared in a 1.0 M $H_2SO_4$ solution containing $NH_4F$ at different anodic voltages. Chemical bonding states of F-N-codoped $TiO_2$ were analyzed using surface X-ray photoelectron spectroscopy (XPS). The photocatalytic activity of the co-doped $TiO_2$ films was analyzed by the degradation of aniline blue solution. Nanotubes were formed with thicknesses of 200-300 nm for the films anodized at 30 V, but porous morphology was generated with pores of 1-2 ${\mu}m$ for the $TiO_2$ anodized at 180 V. The phenomenon of spark discharge was initiated at about 98 V due to the breakdown of the oxide films in both solutions. XPS analysis revealed the spectra of F1s at 684.3 eV and N1s at 399.8 eV for the $TiO_2$ anodized in the $H_2SO_4-NH_4F$ solution at 180 V, suggesting the incorporation of F and N species during anodization. Dye removal rates for the pure $TiO_2$ anodized at 30 V and 180 V were found to be 14.0% and 38.9%, respectively, in the photocatalytic degradation test of the aniline blue solution for 200 min irradiation; the rates for the F-N-codoped $TiO_2$ anodized at 30 V and 180 V were found to be 21.2% and 65.6%, respectively. From the results of diffuse reflectance absorption spectroscopy (DRS), it was found that the absorption edge of the F-N-codoped $TiO_2$ films shifted toward the visible light region up to 412 nm, indicating that the photocatalytic activity of $TiO_2$ is improved by appropriate doping of F and N by the addition of $NH_4F$.

• 전자공학회논문지A
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• 제28A권1호
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• pp.30-39
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• 1991

The influence of physical parameters (Al mole fraction, thickness, doping concentration) in the window and emitter on the efficiency characteristics of heteroface p-$Al_{x}Ga_{1-x}As/p-GaAs/n-GaAs/n^{+}$-GaAs solar cell is investigated. The maximum efficiency theoretically calculated in this device is obtained when a thickness of the window is in a range of (400-1000))$\AA$and a thickness/doping concentration of the emitter is in a range of (0.5-0.8)$\mu$m/(1-7)${\times}10^{17}cm^{-3}$, respectively. Also is the efficiency improved according to the increase of Al mole fraction in the indirect gap window(0.41${\le}x{\le}1.0$). The optimum designed heteroface cell with an area of 0.165cm$^2$fabricated using MOCVD exhibits an active area conversion efficiency of 17%, having a short circuit current density of 21.2mA/cm\ulcorner an open circuit voltage of 0.94V, and a fill factor of 0.75 under ELH-100mW/cm$^2$illumination.

• Carbon letters
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• 제16권1호
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• pp.57-61
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• 2015

Carbon aerogel is a porous carbon material possessing high porosity and high specific surface area. Nitrogen doping reduced the specific surface area and micropores, but it furnished basic sites to improve the $CO_2$ selectivity. In this work, N-doped carbon aerogels were prepared with different ratios of resorcinol/melamine by using the sol-gel method. The morphological properties were characterized by scanning electron microscopy (SEM). Nitrogen content was studied by X-ray photoelectron spectroscopy (XPS) and the specific surface area and micropore volume were analyzed by $N_2$ adsorption-desorption isotherms at 77 K. The $CO_2$ adsorption capacity was investigated by $CO_2$ adsorption-desorption isotherms at 298 K and 1 bar. Melamine containing N-doped CAs showed a high nitrogen content (5.54 wt.%). The prepared N-doped CAs exhibited a high $CO_2$ capture capacity of 118.77 mg/g (at resorcinol/melamine = 1:0.3). Therefore, we confirmed that the $CO_2$ adsorption capacity was strongly affected by the nitrogen moieties.

• Macromolecular Research
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• 제12권1호
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• pp.22-25
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• 2004

We have synthesized aniline oligomer composites by using heteropoly acid (H$_4$SiW$_{12}$O$_{40}$ ) as a dopant. The doping and dedoping processes of the aniline oligomer composites were investigated with the aid of UV- Vis spectra. The bands of the aniline oligomer at 572 nm weakened or disappeared, and the bands at 268, 412, and 771 nm appeared, after the aniline oligomer was doped. When the solution of the aniline oligomer doped with H$_4$SiW$_{12}$O$_{40}$ was kept at lower values of pH, the aniline oligomer could not be dedoped by dilution. The turning point of doping and dedoping occurred at pH 5.5. The band at 771 nm shifted towards longer wavelengths when the aniline oligomer composites were synthesized using acetone as the solvent. This observation indicates that the molecular chain became stretched. In addition, we also investigated the change of the electronic absorption spectra of the composites with respect to the time laid up.id up.

• 대한전자공학회논문지
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• 제21권1호
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• pp.62-70
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• 1984

비저항이 10Ω-cm, 두께가 13∼15mi1인 <111> oriented, p형 Si기판을 이용하여 N+PP+ BSF 전지와 에미터 영역이 N+N 고저 접합으로 이루어진 N+NPP+ HELEBSF(high low emitter bach surface field) 전지를 설계 제작하였다. 접합형 태양전지의 에미터 영역에서 고저 접합구조가 효율 개선에 미치는 영향을 검토하기 위해 HLEBSF 전지의 N영역을 제외하고는 같은 마스크와 동시 공정을 통해 N+PP-전지와 N+NPP+ 전지의 가영역에서 물리적 파라미터들(불순물 농도, 두께)을 동일하게 만들었다. 100mW/㎠의 인공조명에서 측정한 결과 N+PP+ 전지들의 전면적 (유효 수광면적) 평균 변환효율이 10.94%(12.16%)이었고, N+NPP+ 전지들의 평균 변환효율은 12.07% (13.41%)로 나타났다. N+NPP+ 전지의 효율개선은 N+N-고저 접합 에미터 구조가 N+ 에미터 영역에서 나타나는 heavy doping effects를 제거함으로써 에미터 재결합 전류의 증가를 억제하고 나아가 개방전압(Voc)과 단락전류(Ish)의 값을 증가시켜 준 결과로 볼 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.456-456
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• 2009

Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a ${\mu}c$-Si:H intrinsic layer was deposited on the p-a-Si:H layer additionally by PECVD. To improve heat transfer rate to the amorphous silicon layer, and as heating both sides and protecting boron eliminating from the amorphous silicon layer. For p-a-Si:H layer with the ratio of $SiH_4$ : $B_2H_6$ : $H_2$ = 30 : 30 : 120, at $200^{\circ}C$, 50 W, 0.2 Torr for 30 minutes, and for ${\mu}c$-Si:H intrinsic layer, $SiH_4$ : $H_2$ = 10 : 300, at $200^{\circ}C$, 30 W, 0.5 Torr for 60 minutes, 2 cm $\times$ 2 cm size wafers were used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 20 ~ 27 % of power, 150 ~ 160 kHz, 20 ~ 50 mm/s of marking speed, and $10\;{\sim}\;50 {\mu}m$ spacing with continuous wave mode of scanner lens showed the correlation between lifetime and sheet resistance as $100\;{\Omega}/sq$ and $11.8\;{\mu}s$ vs. $17\;{\Omega}/sq$ and $8.2\;{\mu}s$. Comparing to the singly deposited p-a-Si:H layer case, the additional ${\mu}c$-Si:H layer for doping resulted in no trade-offs, but showed slight improvement of both lifetime and sheet resistance, however sheet resistance might be confined by the additional intrinsic layer. This might come from the ineffective crystallization of amorphous silicon layer. For the additional layer case, lifetime and sheet resistance were measured as $84.8\;{\Omega}/sq$ and $11.09\;{\mu}s$ vs. $79.8\;{\Omega}/sq$ and $11.93\;{\mu}s$. The co-existence of $n^+$layeronthesamesurfaceandeliminating the laser damage should be taken into account for an IBC solar cell structure. Heavily doped uniform boron layer by fiber laser brings not only basic and essential conditions for the beginning step of IBC solar cell fabrication processes, but also the controllable doping concentration and depth that can be established according to the deposition conditions of layers.