• Bulletin of the Korean Chemical Society
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• v.12 no.5
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• pp.490-494
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• 1991

The ${\beta} to {\alpha}$ phase transition in silver iodide is studied with the (N, V, E) and (N, P, T) molecular dynamics (MD) method. In experiments, the phase transition temperature is 420 K. Upon heating of ${\beta}$ form, the iodine ions undergo hcp to bcc transformation and silver ions become mobile. MD simulations for the ${\beta}$ and ${\alpha}$ phases are carried out at several temperatures and the radial distribution functions (rdf) are obtained at those temperatures in the (N, V, E) ensemble. But the phase transition is not found in our calculation. Next the phase transition is studied with the (N, P, T) MD and we find some evidences of phase transition. At 3 Kbars and 2 Kbars the phase transition temperatu re is about 300 K. For 3.55 Kbars, the phase transition is higher (420 K) than the low pressure case. The phase transition temperature is somewhat dependent on the pressure in our calculations.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.150.1-150.1
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• 2007

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.246.1-246.1
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• 2014

Over the past several years, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED). In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[1] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 8 V, the QDLED device emitted spectrally orange color lights with high luminance up to 2450 cd/m2, and showed current efficacy of 0.6 cd/A, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.6
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• pp.52-57
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• 2009

This paper presents a low-noise low-dropout linear regulator that is suitable for on-chip integration with RF transceiver ICs. In the bandgap reference, a stacked diode structure is adopted for saving silicon area as well as maintaining low output noise characteristic. Theoretical analysis for supporting the approach is also described. The linear regulator is fabricated in $0.18{\mu}m$ CMOS process. It operates with an input voltage range of 2.2 V - 5 V and provide the output voltage of 1.8 V and the output current up to 90 mA. The measured line and load regulation is 0.04%/V and 0.46%, respectively. The output noise voltage is measured to be 479 nV/$^\surd{Hz}$ and 186 nV/$^\surd{Hz}$ from 100 Hz and 1 kHz offset, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.33-38
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• 2000

The ~1540 nm Er$^{3+}$ photoluminescence (PL) and photoluminescence excitation (PLE) spectra of Er-implanted Mg-codoped GaN (GaN:Er+Mg) exhibit that the excitation efficiency of a specific Er$^{3+}$ center among different Er$^{3+}$ centers existing in Er-implanted GaN is selectively enhanced, compared to Er-implanted undoped GaN (GaN:Er). In GaN:Er+Mg, the 1540 nm PL peaks characteristic of the so-called "violet-pumped" Er$^{3+}$ center and the ~2.8-3.4 eV (violet) PLE band are significantly strengthened by the Mg-doping. The intra-f absorption PLE bands associated with this "violet-pumped" center are also enhanced by this doping. The 1540 nm PL peaks originating from the violet-pumped center dominate the above-gap-excited Er$^{3+}$ PL spectrum of GaN:Er+Mg, whereas it was unobservable under above-gap excitation in GaN:Er. All of these results indicate that Mg doping increases the efficiency of trap-mediated excitation of Er$^{3+}$ emission in Er-implanted GaN.planted GaN.

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.119.1-119.1
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• 2008

• Nuclear Engineering and Technology
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• v.55 no.2
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• pp.690-695
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• 2023

Recommendations are given to improve the efficiency of radiation protection of transport casks for SNF transportation. The attenuation of ${\gamma}$-quanta of long-lived isotopes ¹³⁴Cs, ^137mBa(¹³⁷Cs), ¹⁵⁴Eu and ⁶⁰Co by optimizing the thicknesses and arrangement of layers of Fe and Pb radiation shields of transport casks is studied. The fixed radiation shielding mass (fixed mass thickness) is chosen as the main optimization criterion. The effect of the placement order of Fe and Pb layers in a combined two-layer radiation shield with an equivalent thickness of 30 cm is studied in detail. It is shown that with the same mass thicknesses of the Fe and Pb layers, the placement of Fe in the first layer, and Pb - in the second one provides more than twofold attenuation of ${\gamma}$-quanta compared to the reverse placement: Pb - in the first layer, Fe - in the second. The increase in the efficiency of attenuation of ${\gamma}$-quanta for TC with combined shielding of Fe and Pb is shown to be achieved by designing the first layer of radiation shielding around the canister with SNF from Fe of the maximum possible thickness.

• Journal of Korean Neurosurgical Society
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• v.57 no.5
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• pp.329-334
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• 2015

Objective : To comparatively investigate the expression of several integrins in specimens of human bone metastases and degenerative bone tissue. Methods : Degenerative cancellous tissue was obtained from a sample of human degenerative spine. Thirteen human specimens were obtained from metastatic spine tumors, whose primary cancer was colon cancer (n=3), hepatocellular cancer (n=3), lung cancer (n=4), and breast cancer (n=3). The expression of vimentin and integrins ${\alpha}v$, ${\beta}1$, and ${\beta}3$ was assessed in metastatic and degenerative specimens by immunohistochemistry and real-time reverse transcription-polymerase chain reaction (qRT-PCR). Results : Immunohistochemical staining showed that vimentin and integrin ${\alpha}v$ was broadly expressed in all tissues examined. By contrast, integrin ${\beta}1$ was weakly expressed only in 38.4% (5/13) of tissues. Integrin ${\beta}3$ was consistently negative in all cases examined. qRT-PCR analysis showed that vimentin gene expression was higher in all metastatic specimens, as compared to degenerative bone. The gene expression of integrin ${\alpha}v$ in breast specimen was significantly higher than others (p=0.045). The gene expression of integrin ${\beta}1$ was also higher in all metastatic specimens than in degenerative bone tissue. The gene expression of integrin ${\beta}3$ was variable. Conclusion : Spinal metastatic tumors have mesenchymal characteristics such as increased expression of vimentin. The increased expression of integrin ${\alpha}v$ and ${\beta}1$ in spine metastatic tumors suggests that adhesive molecules such as integrin may have implications for the prevention of spine metastasis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.339-339
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• 2010

Photo-assisted wet chemical etching of GaN thin film was studied using KOH based solutions. A $2{\mu}m-2{\mu}m$ titanium line-and-space pattern was used as a etching mask. It is found that the etching characteristics of the GaN thin film is strongly dependent on the pattern direction by unisotropic property of KOH based solution. When the pattern was aligned to the [$11\bar{2}0$] directions, ($10\bar{1}n$)-facet is revealed constructing V-shaped sidewalls.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.307-312
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• 2018

Liquid phases in ZnO varistors cause more complex phase development and microstructure, which makes the control of electrical properties and reliability more difficult. Therefore, we have investigated 2 mol% $CaCO_3$ doped $ZnO-Co_3O_4-Cr_2O_3-La_2O_3$ (ZCCLCa) bulk ceramics as one of the compositions without liquid phase sintering additive. The results were as follows: when $CaCO_3$ is added to ZCCLCa ($644{\Omega}cm$) acting as a simple ohmic resistor, CaO does not form a secondary phase with ZnO but is mostly distributed in the grain boundary and has excellent varistor characteristics (high nonlinear coefficient ${\alpha}=78$, low leakage current of $0.06{\mu}A/cm^2$, and high insulation resistance of $1{\times}10^{11}{\Omega}cm$). The main defects $Zn_i^{{\cdot}{\cdot}}$ (AS: 0.16 eV, IS & MS: 0.20 eV) and $V_o^{\bullet}$ (AS: 0.29 eV, IS & MS: 0.37 eV) were found, and the grain boundaries had 1.1 eV with electrically single grain boundary. The resistance of each defect and grain boundary decreases exponentially with increasing the measurement temperature. However, the capacitance (0.2 nF) of the grain boundary was ~1/10 lower than that of the two defects (~3.8 nF, ~2.2 nF) and showed a tendency to decrease as the measurement temperature increased. Therefore, ZCCLCa varistors have high sintering temperature of $1,200^{\circ}C$ due to lack of liquid phase additives, but excellent varistor characteristics are exhibited, which means ZCCLCa is a good candidate for realizing chip type or disc type commercial varistor products with excellent performance.