• Journal of the Korean institute of surface engineering
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• v.44 no.3
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• pp.95-104
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• 2011

Ti based nanocomposite films including V, Si and Nb (Ti-Me-N, Me=V, Si and Nb) were fabricated by hybrid physical vapor deposition (PVD) method consisting of unbalanced magnetron (UBM) sputtering and arc ion plating (AIP). The pure Ti target was used for arc ion plating and other metal targets (V, Si and Nb) were used for sputtering process at a gas mixture of Ar/$N_2$ atmosphere. Mostly all of the films were grown with textured TiN (111) plane except the Si doped Ti-Si-N film which has strong (200) peak. The microhardness of each film was measured using the nanoindentation method. The minimum value of removal rate ($0.5{\times}10^{-15}\;m^2/N$) was found at Nb doped Ti-Nb-N film which was composed of Ti-N and Nb-N nanoparticles with small amount of amorphous phases.

• Biotechnology and Bioprocess Engineering:BBE
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• v.9 no.1
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• pp.47-51
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• 2004

Ceramide III was prepared by the cultivation of Saccharomyces cerevisiae. Ceramide III was partitioned from the cell extracts by solvent extraction and analyzed by Normal Phase High Performance Liquid Chromatography (NP-HPLC) using Evaporative Light Scattering Detector (ELSD). We experimentally determined the mobile phase composition to separate ceramide III with NP-HPLC. Three binary mobile phases of n-hexane/ethanol, n-hexane/lsoprophyl Alcohol(IPA) and n-hexane/n-butanol and one ternary mobile phase of n-hexane/IPA/methanol were demonstrated. For the binary mobile phase of n-hexane/ethanol, the first mobile phase composition, 95/5(v/v), was step-increased to 72/23(v/v) at 3 min. In the binary mobile phase, the retention time of ceramide III was 7.87min, while it was 4.11 min respectively in the ternary system, where the mobile phase composition of n-hexane/IPA/methanol, 85/7/8(v/v/v), was step-increased to 75/10/15(v/v/v) at 3 min. However, in the ternary mobile phase, the more peak area of ceramide III was observed.

• The Transactions of the Korean Institute of Power Electronics
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• v.24 no.3
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• pp.201-206
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• 2019

This study presents the design and experimental result of a GaN-based DC-DC converter with an integrated gate driver. The GaN device is attractive to power electronic applications due to its superior device performance. However, the switching loss of a GaN-based power converter is susceptible to the common source inductance, and converter efficiency is severely degraded with a large loop inductance. The objective of this study is to achieve high-efficiency power conversion and the highest power density using a multiphase integrated half-bridge GaN solution with minimized loop inductance. Before designing the converter, several GaN and Si devices were compared and loss analysis was conducted. Moreover, the impact of common source inductance from layout parasitic inductance was carefully investigated. Experimental test was conducted in buck mode operation at 48 -12 V, and results showed a peak efficiency of 97.8%.

• Journal of Information Display
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• v.12 no.1
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• pp.1-4
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• 2011

A complementary inverter was fabricated using pentacene and N-N -dioctyl-3,4,9,10-perylene tetracarboxylic diimide-C (PTCDI-C8) for p- and n-type transistors on a poly(ether sulfone) substrate, respectively. The mobilities of the p- and n-type transistors were 0.056 and 0.013 $cm^2$/Vs, respectively. The inverter, which was composed of p- and n-type transistors, showed a gain of 48.6 when $V_{DD}$ = -40V and at the maximum noise margin of $V_{DD}$/2. A ring oscillator was also fabricated by cascading five inverters. The five-stage ring oscillator showed the maximum output frequency of 10 kHz when $V_{DD}$ = -170 V.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.154.1-154.1
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• 2007

• Journal of Microbiology and Biotechnology
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• v.22 no.2
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• pp.234-238
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• 2012

Recombinant Escherichia coli displaying organophosphorus hydrolase (OPH) was used to overcome the diffusion barrier limitation of organophosphorus pesticides. A new anchor system derived from the N-terminal domain of ice-nucleation protein from Pseudomonas syringae InaV (InaV-N) was used to display OPH onto the surface. The designed sequence was cloned in the vector pET-28a(+) and then was expressed in E. coli. Tracing of the expression location of the recombinant protein using SDS-PAGE showed the presentation of OPH by InaV-N on the outer membrane, and the ability of recombinant E. coli to utilize diazinon as the sole source of energy, without growth inhibition, indicated its significant activity. The location of OPH was detected by comparing the activity of the outer membrane fraction with the inner membrane and cytoplasm fractions. Studies revealed that recombinant E. coli can degrade 50% of 2 mM chlorpyrifos in 2 min. It can be concluded that InaV-N can be used efficiently to display foreign functional protein, and these results highlight the high potential of an engineered bacterium to be used in bioremediation of pesticide-contaminated sources in the environment.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1418-1419
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• 2011

차세대 전력 반도체인 고전압 GaN 쇼트키 장벽 다이오드의 역방향 특성을 개선하기 위해서 열 산화공정이 제안되었다. AlGaN/GaN 에피탁시 위에 쇼트키 장벽 다이오드 구조가 제작되었으며, 쇼트키 컨택은 증착 후 $450^{\circ}C$에서 산화되었다. 열 산화공정이 메사 측벽의 AlGaN 및 GaN 표면에 $AlO_x$ 및 $GaO_x$를 형성하여 표면으로 흐르는 누설전류를 억제한다. 표면 및 GaN 버퍼를 통한 누설전류는 열 산화 공정 이후 100 ${\mu}m$-너비당 51.3 nA에서 24.9 pA로 1/2000 배 수준으로 감소하였다. 표면 산화물 형성으로 인하여 생성된 Ga-vacancy와 Al-vacancy는 acceptor로 동작하여 surface band bending을 증가시켜 쇼트키 장벽 높이를 증가시킨다. 애노드-캐소드 간격이 5 ${\mu}m$인 제작된 소자는 0.99 eV의 높은 쇼트키 장벽 높이를 획득하여, -100 V에서 0.002 A/$cm^2$의 낮은 누설전류를 확보하였다. 애노드-캐소드 간격이 5에서 10, 20, 50 ${\mu}m$로 증가되면 소자의 항복전압은 348 V에서 396, 606, 941 V로 증가되었다. 열 산화공정은 전력용 GaN 전자소자의 누설전류감소와 항복전압 증가를 위한 후처리 공정으로 적합하다.

• Journal of IKEEE
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• v.25 no.3
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• pp.511-516
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• 2021

The electrical characteristics of AlGaN/GaN/HEMT and MOSHFETs with NiO were studied. The threshold voltage of NiO MOSHFET revealed positive shift of +1.03 V than the -3.79 V of HEMT and negative shift of -1.73 V for SiO₂ MOSHFET. Also, NiO MOSHFET showed better linearity in drain current corresponding to gate voltage and higher transconductance at positive gate voltage than the others. The response of gate pulse with base voltage of -5 V was different for both transistors as HEMT showed 20 % drain current decrease at the frequency range of 0.1 Hz~10 Hz and NiO MOSHFET decreased continuously above 10 Hz.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.3
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• pp.89-93
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• 2014

In this study, effects of the V/III ratio on a-plane GaN epitaxial on r-plane grown by HVPE have been investigated. According to increasing of V/III ratio, the value of FWHM of a-plane (11-20) GaN and the value of surface roughness (Ra) were decreased. Growth rate of a-plane GaN epitaxial layer were increased until V/III ratio = 7 as the increasing of V/III ratio, but it was reduced at V/III ratio = 10. At V/III ratio = 10, the FWHM of a-plane (11-20) GaN RC and the surface roughness (Ra) were 829 arcsec and 1.58 nm, respectively, as the lowest value in this study. Also for V/III ratio = 10, cracks under surface or voids were observed the lowest values in images of optical microscope. An M-shaped azimuthal dependence over $360^{\circ}$ angle range was observed for all samples. At V/III ratio = 10, the difference of FWHM of a-plane GaN between $0^{\circ}$ and $90^{\circ}$ was 439 arcsec revealed as the lowest value in the 4 samples.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.315-315
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• 2013

We report the electronic structure modification in the swift heavy ion (SHI) irradiated N-doped ZnO thin films prepared by RF sputtering from ZnO target in different ratio of Ar/$N_2$ gas mixture using highly pure $N_2$ gas. The different N-ZnO thin lms were then irradiated with 120 MeV Ag ion beam with different doses ranging from $1{\times}10^{11}$ to $5{\times}10^{12}$ ions/$cm^2$ and characterized by XRD and near edge X-ray absorption ne structure (NEXAFS) at N and O K-edges. The NEXAFS measurements provide direct evidence of O 2p and Zn 3d orbital hybridization and also the bonding of N ions with Zn and O ions. The minimum value of resistivity of $790{\Omega}cm$, a Hall mobility of $22cm^2V^-1s^-1$ and the carrier concentration of $3.6{\times}10^{14}cm^{-3}$ were yielded at 75% $N_2$. X-ray diffraction (XRD) measurements revealed that N-doped ZnO films had the preferential orientation of (002) plane for all samples, while crystallinity start decreasing at 32.5% $N_2$. The average crystallite size varies from 5.7 to 8.2 nm for 75% and then decreases to 7.8 nm for 80% $Ar:N_2$ ratio.