• 제목/요약/키워드: N-Oxide

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미끄럼운동 시 TiN코팅에 형성되는 산화막이 마찰 및 마멸 특성에 미치는 영향

  • 조정우;임정순;우상규;이영제
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2002년도 제35회 춘계학술대회
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    • pp.310-316
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    • 2002
  • In this study, the effects of oxide layer formed on the wear tracks of TiN coated silicon wafer on friction and wear characteristics were investigated. Silicon wafer was used for the substrate of coated disk specimens, which were prepared by depositing TiN coating with $1{\mu}m$ in coating thickness. AISI 52100 steel ball was used for the counterpart. The tests were performed both in air for forming oxide layer on the wear track and in nitrogen to avoid oxidation. This paper reports characterization of the oxide layer effects on friction and wear characteristics using X-ray diffraction (XRD). Auger electron spectroscopy (AES), scanning electron microscopy (SEM) and sliding tests.

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미끄럼시험시 TiN 코팅볼과 스틸디스크에 형성되는 산화막의 특성과 마찰특성에 미치는 영향

  • 조정우;박동신;임정순;이영제
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2001년도 제33회 춘계학술대회 개최
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    • pp.401-405
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    • 2001
  • The effects of oxide layer formed on TiN coated ball and counter-body have been investigated from the frictional point of view during sliding tests. AISI52100 steel ball was used for the substrate of coated specimens. Two types of coated specimens were prepared by depositing TiN coating with 1 and 4$\mu\textrm{m}$ in coating thickness. AISI1045 steel was used for the disk type counter-body. To investigate the effect of oxide layer on the contact parts of two materials, the tests were performed both in ambient for forming oxide layer on the contact parts and in nitrogen environment to avoid oxidation.

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Nicotinic acid N-oxide를 이용한 항콜레스테롤 연고의 경피 투과 특성 (Transdermal Permeation Characteristics of Anti Cholesterol Ointment using Nicotinic acid N-oxide)

  • 정덕채;김규원
    • 한국응용과학기술학회지
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    • 제25권2호
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    • pp.123-129
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    • 2008
  • Transdermal therapeutic system(TTS) is often used as the method of drug dosage into the epidermic skin. Natural polymer were selected as ointment material of TTS. We investigated the permeation of natural polymer ointment containing drug in rat skin using horizontal membrane cell model. Permeation properties of materials were investigated for water-soluble drug such as Nicotinic acid N-oxide in vitro. These results showed that skin permeation rate of drug across the composite was mainly dependent on the property of ointment base and drug. Proper selection of the polymeric materials which resemble and enhance properties of the delivering drug was found to be important in controlling the skin permeation rate. This result suggests a possible use of natural polymer ointment base as TTS of antihyperlipoproteinemic agent.

Al-isopropoxide로부터 제조한 AlN 세라믹스의 기계적 성질과 미세구조에 미치는 산화물 첨가제의 영향 (Effects of Oxide Additions on Mechanical Properties and Microstructures of AlN Ceramics Prepared from Al-isopropoxide)

  • 이홍림;황해진
    • 한국세라믹학회지
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    • 제27권6호
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    • pp.799-807
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    • 1990
  • In this study, effects of oxide additives on mechanical properties and microstructure of A1N and A1N polytype ceramics were investigated. Fine A1N powder was synthesized by nitriding alumiuim hydroxide prepared from Al-isopropoxide, at 1350$^{\circ}C$ for 10h in N2 atmosphere. By adding 3w/o Y2O3, 0.56w/o CaO, and 10w/o SiO2 to AlN powder, AlN and AlN polytype ceramics were prepared by hot-pressing under the pressure of 30 MPa at 1800$^{\circ}C$ for 1h. AlN ceramics with no additives formed considerable amount of AlON phase, while AlN ceramics doped with Y2O3 or CaO decreased AlON phase and formed Y-Al or Ca-Al oxide compound. AlN+10w/o SiO2(+3w/o Y2O3) composition produced AlON and AlN polytype compound having 21R as a major phase. Room temperature flexural strength of AlN ceramics with no additive was 246MPa, and room temperature flexural strength and critical temperature difference by thermal shock(ΔTc) of AlN ceramics dooped with Y2O3 or CaO were 532MPa/340$^{\circ}C$ and 423MPa/300$^{\circ}C$, respectively. Y2O3 and CaO used as sintering agent played roles of densification and oxygen removal of AlN ceramics, and affected grain growth/grain morphologies of AlN ceramics.

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Hydrated Vanadium Pentoxide/Graphene Oxide Nanobelts for Enhanced Electrochemical Performance

  • Hyegyeong Hwang;Jinsung Kwak
    • 한국재료학회지
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    • 제34권8호
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    • pp.387-394
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    • 2024
  • Transition metal oxide-based materials have mainly been studied as electrodes for energy storage devices designed to meet essential energy demands. Among transition metal oxide-based materials, hydrated vanadium pentoxide (V2O5·nH2O), a vanadium oxide material, has demonstrated great electrochemical performance in the electrodes of energy storage devices. Graphene oxide (GO), a carbon-based material with high surface area and high electrical conductivity, has been added to V2O5·nH2O to compensate for its low electrical conductivity and structural instability. Here, V2O5·nH2O/GO nanobelts are manufactured with water without adding acid to ensure that the GO is uniformly dispersed, using a microwave-assisted hydrothermal synthesis. The resulting V2O5·nH2O/GO nanobelts exhibited a high specific capacitance of 206 F/g and more stable cycling performance than V2O5·nH2O without GO. The drying conditions of the carbon paper electrodes also resulted in more stable cycling performance when conducted at high vacuum and high temperature, compared with low vacuum and room temperature conditions. The improvement in electrochemical performance due to the addition of GO and the drying conditions of carbon paper electrodes indicate their great potential value as electrodes in energy storage devices.

Effect of Aeration on Nitrous Oxide ($N_2O$) Emission from Nitrogen-Removing Sequencing Batch Reactors

  • Kim, Dong-Jin;Kim, Yuri
    • Journal of Microbiology and Biotechnology
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    • 제23권1호
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    • pp.99-105
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    • 2013
  • In this study, nitrous oxide ($N_2O$) emission was compared between the operations of two different sequencing batch reactors, conventional sequencing batch reactor (CNVSBR) and simultaneous nitrification and denitrification sequencing batch reactor (SND-SBR), using synthetic wastewater. The CNV-SBR consisted of anoxic (denitrification) and aerobic phases, whereas the SND-SBR consisted of a microaerobic (low dissolved oxygen concentration) phase, which was achieved by intermittent aeration for simultaneous nitrification and denitrification. The CNV-SBR emitted 3.9 mg of $N_2O$-N in the denitrification phase and 1.6 mg of $N_2O$-N in the nitrification phase, resulting in a total emission of 5.5mg from 432mg of $NH_4^+$-N input. In contrast, the SND-SBR emitted 26.2mg of $N_2O$-N under the microaerobic condition, which was about 5 times higher than the emission obtained with the CNV-SBR at the same $NH_4^+$-N input. From the $N_2O$ yield based on $NH_4^+$-N input, the microaerobic condition produced the highest yield (6.1%), followed by the anoxic (0.9%) and aerobic (0.4%) conditions. It is thought that an appropriate dissolved oxygen level is critical for reducing $N_2O$ emission during nitrification and denitrification at wastewater treatment plants.

Improvement of Commercial Silicon Solar Cells with N+-P-N+ Structure using Halogenic Oxide Passivation

  • K. Chakrabarty;D. Mangalaraj;Kim, Kyung-Hae;Park, J.H.;J. Yi
    • Transactions on Electrical and Electronic Materials
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    • 제4권6호
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    • pp.17-20
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    • 2003
  • This paper describes the effect of halogenic gettering during oxide passivation of commercial solar cell with the $N^{+}$-P-$N^{+}$ structure. In order to study the effect of halogenic gettering on $N^{+}$-P-$N^{+}$ structure mono-crystalline silicon solar cell, we performed conventional POCl$_3$ diffusion for emitter formation and oxide passivation in the presence of HCl vapors. The $N^{+}$-P-$N^{+}$ structure based silicon solar cells were found to have higher short circuit current and minority carrier lifetime. Their performance was also found to be superior than the conventional $N^{+}$-P-$N^{+}$ structure based mono-crystalline silicon solar cell. The cell parameters of the $n^{+}$-p-$p^{+}$ and $n^{+}$-p-$n^{+}$ structure based cells, passivated by HCl assisted oxidation were measured. The improvement in $I_{sc}$ was attributed to the effect of the increased diffusion length of minority carriers, which came from the halogenic gettering effect during the growth of passivating oxide. The presence of chlorine caused gettering of the cells by removing the heavy metals, if any. The other advantage of the presence of chlorine was the removal of the diffusion induced (in oxygen environment) stacking faults and line defects from the surfaces of the silicon wafers. All these effects caused the improvement of the minority carrier lifetime, which in-turn helped to improve the quality of the solar cells.

마이크로파 조건에서 여러가지 산화제를 이용한 풀러렌[$C_{60}$의 산화반응 (The Oxidation of Fullerene[$C_{60}$] using Several Oxidants under Microwave Irradiation)

  • 고원배;황성호;안주현
    • Elastomers and Composites
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    • 제40권1호
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    • pp.45-52
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    • 2005
  • 풀러렌[$C_{60}$]은 3-chloroperoxy benzoic acid, benzoyl peroxide, trichloroisocyanuric acid, chromium(VI) oxide 등의 산화제를 사용하여 마이크로파 조건에서 반응시켜 풀러렌 산화물[$C_{60}(O)_n$] ($n=1{\sim}4$ or n=1)을 합성하였다. 동일한 마이크로파 조건에서 여러 가지 산화제와 풀러렌[$C_{60}$]의 고체상태 반응성은 3-chloroperoxy benzoic acid>benzoyl peroxide>trichloroisocyanuric acid$\simeq$chromium(VI) oxide 순으로 증가함을 나타냈다. MALDI-TOF-MS, UV-visible, 그리고 HPLC를 사용하여 분석한 결과 생성된 풀러렌 산화물은[$C_{60}(O)_n$] ($n=1{\sim}4$ or n=1)임을 알 수 있었다.

Synthesis and Properties of CuNx Thin Film for Cu/Ceramics Bonding

  • Chwa, Sang-Ok;Kim, Keun-Soo;Kim, Kwang-Ho
    • The Korean Journal of Ceramics
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    • 제4권3호
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    • pp.222-226
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    • 1998
  • $Cu_3N$ film deposited on silicon oxide substrate by r.f. reactive sputtering technique. Synthesis and properties of copper nitride film were investigated for its possible application to Cu metallization as adhesive interlayer between copper and $SiO_2. Cu_3N$ film was synthesized at the substrate temperature ranging from $100^{\circ}C$ to $200^{\circ}C$ and at nitrogen gas ratio above $X_{N2}=0.4. Cu_3N, CuN_x$, and FGM-structured $Cu/CuN_x$ films prepared in this work passed Scotch-tape test and showed improved adhesion property to silicon oxide substrate compared with Cu film. Electrical resistivity of copper nitride film had a dependency on its lattice constant and was ranged from 10-7 to 10-1 $\Omega$cm. Copper nitride film was, however, unstable when it was annealed at the temperature above $400^{\circ}C$.

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