• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.328-334
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• 2001

The characteristics of $NO/N_2O$ nitrided oxide and reoxidized nitrided oxide being studied as super thin gate oxide and gate dielectric layers of nonvolatile semiconductor memory(NVSM) was investigated by dynamic secondary ion mass spectrometry(D-SMS), time-of-flight secondary ion mass spectrometry(ToF-SIMS), and x-ray photoelectron spectroscopy (XPS). The specimen was annealed in $NO/N_2O$ ambient after initial oxide process. The result of D-SIMS exhibits that the center of nitrogen exists at the initial oxide interface and the distribution of nitrogen is wider in the annealing process with $N_2O$ than with NO annealing process. For investigating the condition of nitrogen that exists within the nitrided oxide, ToF-SIMS and XPS analysis were carried out. It was shown that the center of nitrogen investigated by D-SIMS was expected the SiON chemical bonds. The nitrogen near the newly formed reoxide/silicon substrate interface was appeared as $Si_2NO$ chemical bonds, and it is agreed with the distribution of SiN and $Si_2NO$ species by ToF-SIMS.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.11a
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• pp.109-116
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• 2001

In this study, the effects of oxide layer formed on the contact parts of TiN coated ball and steel disk in sliding are investigated. Also wear mechanism to form the oxide layer and the characteristics of the oxide layer formation are investigated. AIS152100 steel ball is used for the substrate of coated ball specimens. Two types of coated ball specimens were prepared by depositing TiN coating with 1 and 4um in coating thickness. AISI1045 steel is used for the disk type counter-body. To investigate the effect of oxide layer on the contact parts of the two materials, the tests were performed both in ambient for forming oxide layer on the contact parts and in nitride environment to avoid oxidation. And to study the effects of surface roughness of counter-body, TiN coating thickness and contact load of sliding test on the characteristics of oxide layer formation on counter-body, various tests were carried out. From the results, the friction characteristics between the two materials was predominated by iron oxide layer that formed on wear track on counter-body and this layer caused the high friction. And the formation rate of the oxide layer on wear track increased as the real contact area between the two materials increased as the contact load increased, the TiN coating thickness decreased and the surface of counter-body smoothened.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.169-172
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• 2004

Deep sub-micron device required to get the superior ultra thin gate oxide characteristics. In this research, I will recommend a novel shallow trench isolation structure(STI) for thin gate oxide and a $N_2$O gate oxide 30 $\AA$ by NO ambient process. The local oxidation of silicon(LOCOS) isolation has been replaced by the shallow trench isolation which has less encroachment into the active device area. Also for $N_2$O gate oxide 30 $\AA$, ultra thin gate oxide 30 $\AA$ was formed by using the $N_2$O gate oxide formation method on STI structure and LOCOS structure. For the metal electrode and junction, TiSi$_2$ process was performed by RTP annealing at 850 $^{\circ}C$ for 29 sec. In the viewpoints of the physical characteristics of MOS capacitor, STI structure was confirmed by SEM. STI structure was expected to minimize the oxide loss at the channel edge. Also, STI structure is considered to decrease the threshold voltage, result in a lower Ti/TiN resistance( Ω /cont.) and higher capacitance-gate voltage(C- V) that made the STI structure more effective. In terms of the TDDB(sec) characteristics, the STI structure showed the stable value of 25 % ～ 90 % more than 55 sec. In brief, analysis of the ultra thin gate oxide 30 $\AA$ proved that STI isolation structure and salicidation process presented in this study. I could achieve improved electrical characteristics and reliability for deep submicron devices with 30 $\AA$ $N_2$O gate oxide.

• Journal of Powder Materials
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• v.11 no.1
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• pp.28-33
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• 2004

In the present study, the focus is on the analysis of carbothermal reduction of the titanium-cobalt-oxygen based oxide powder by solid carbon for the optimizing synthesis process of ultra fined TiC/Co composite powder. The titanium-cobalt-oxygen based oxide powder was prepared by the combination of the spray drying and desalting processes using the titanium dioxide powder and cobalt nitrate as the raw materials. The titanium-cobalt-oxygen based oxide powder was mixed with carbon black, and then this mixture was carbothermally reduced under a flowing argon atmosphere. The changes in the phase structure and thermal gravity of the mixture during carbothermal reduction were analysed using XRD and TGA. The synthesized titanium-cobalt-oxygen based oxide powder has a mixture of $TiO_2$ and $CoTiO_3$. This oxide powder was transformed to a mixed state of titanium car-bide and cobalt by solid carbon through four steps of carbothermal reduction steps with increasing temperature; reduction of $CoTiO_3$ to $TiO_2$ and Co, reduction of $TiO_2$, to the magneli phase($Ti_nO_{2n-1}$, n>3), reduction of the mag-neli phase($Ti_nO_{2n-1}$, n>3) to the $Ti_nO_{2n-1}$(2$\leq$n$\leq$3) phases, and reduction and carburization of the $Ti_nO_{2n-1}$(2$\leq$n$\leq$3) phases to titanium carbide.

• Journal of Korean Society on Water Environment
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• v.20 no.2
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• pp.104-109
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• 2004

Removal of nutrients from domestic sewage or industrial wastewater is needed to protect surface waters from eutrophication. This research was carried out to remove the nitrogen (N) and phosphorus (P) from the wastewater using the iron oxide obtained from the steel industry and the natural zeolite, respectively. This research was conducted in both batch and continuous systems. The removal efficiency of the nutrients was evaluated in the batch system using the varying concentrations of zeolite and iron oxide added. The removal efficiency of N was 60% at the 8g of zeolite added. In the same condition, the removal efficiencies of N were 76% and 82% at 12g and 16g of zeolite added, respectively. Removal efficiency of P was 80% as 8g of iron oxide was added. The removal efficiency of P was correspondingly increased as the concentration of iron oxide was increased. Continuous column system was also used to evaluate the removal efficiency of N and P by the addition of zeolite and ferric oxide, respectively. Removal efficiencies of N were compared in the mixed packing, two stage, and four stage columns, respectively. The removal efficiencies (80%) of N in the separate packed columns (two and four stages) were higher than the mixed packing column (400%) after 90 hr. Whereas, the removal efficiencies of P were similar to each other in the three columns.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.2
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• pp.471-475
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• 1999

The metal plasma-etch damage immunity of nMOSFET with $N{_2}O$ gate oxide is found to be improved comparing to that with regular pure oxide of similar thickness. With increasing the antenna ratio (AR), the characteristics of nMOSFETs with $N{_2}O$ oxide shows tighter initial distribution and smaller degradation under constant field stress, which is explained by the effect of the nitrogen at the substrate $Si/SiO_2$ interface. Also, if $N{_2}O$ gate oxide is used, the maximum allowable size of metal AAR and PAR may be increased to the much larger values. These improvements of nMOSFETs with $N{_2}O$ gate oxide are attributed to the effect of the interface hardness improved by the nitrogen included at the substrate-Si/$N{_2}O$-oxide interface.

• Elastomers and Composites
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• v.54 no.3
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• pp.252-256
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• 2019

Fullerene oxide[$C_{60}(O)_n$, ($n{\geq}1$)] was synthesized by dissolving fullerene[$C_{60}$] and 3-chloroperoxybenzoic acid in toluene under refluxing condition for 5 h. Hybrid fullerene oxide-silver nanoparticle composites were synthesized by dissolving fullerene oxide and silver nitrate[$AgNO_3$] in diethylene glycol under ultrasonic irradiation for 3 h. The synthesized hybrid nanocomposites were characterized by X-ray diffraction, scanning electron microscopy, and ultraviolet-visible[UV-vis] spectroscopy. The catalytic activity for the reduction of various nitroanilines[NAs] was identified by UV-vis spectrophotometer. The efficiency of the catalytic reduction by the synthesized hybrid nanocomposites has an order of 4-NA > 2-NA > 3-NA.

• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.250-253
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• 2013

In this paper, we fabricated 3D pillar type silicon-oxide-nitride-oxide-silicon (SONOS) devices for high density flash applications. To solve the limitation between erase speed and data retention of the conventional SONOS devices, bandgap-engineered (BE) tunneling oxide of oxide-nitride-oxide configuration is integrated with the 3D structure. In addition, the tunneling oxide is modulated by another method of $N_2$ ion implantation ($N_2$ I/I). The measured data shows that the BE-SONOS device has better electrical characteristics, such as a lower threshold voltage ($V_{\tau}$) of 0.13 V, and a higher $g_{m.max}$ of 18.6 ${\mu}A/V$ and mobility of 27.02 $cm^2/Vs$ than the conventional and $N_2$ I/I SONOS devices. Memory characteristics show that the modulated tunneling oxide devices have fast erase speed. Among the devices, the BE-SONOS device has faster program/erase (P/E) speed, and more stable endurance characteristics, than conventional and $N_2$ I/I devices. From the flicker noise analysis, however, the BE-SONOS device seems to have more interface traps between the tunneling oxide and silicon substrate, which should be considered in designing the process conditions. Finally, 3D structures, such as the pillar type BE-SONOS device, are more suitable for next generation memory devices than other modulated tunneling oxide devices.

• Korean Journal of Materials Research
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• v.29 no.3
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• pp.196-203
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• 2019

We report on the fabrication and characterization of an oxide photoanode with a zinc oxide (ZnO) nanorod array embedded in cuprous oxide ($Cu_2O$) thin film, namely a $ZnO/Cu_2O$ oxide p-n heterostructure photoanode, for enhanced efficiency of visible light driven photoelectrochemical (PEC) water splitting. A vertically oriented n-type ZnO nanorod array is first prepared on an indium-tin-oxide-coated glass substrate via a seed-mediated hydrothermal synthesis method and then a p-type $Cu_2O$ thin film is directly electrodeposited onto the vertically oriented ZnO nanorod array to form an oxide p-n heterostructure. The introduction of $Cu_2O$ layer produces a noticeable enhancement in the visible light absorption. From the observed PEC current density versus voltage (J-V) behavior under visible light illumination, the photoconversion efficiency of this $ZnO/Cu_2O$ p-n heterostructure photoanode is found to reach 0.39 %, which is seven times that of a pristine ZnO nanorod photoanode. In particular, a significant PEC performance is observed even at an applied bias of 0 V vs $Hg/Hg_2Cl_2$, which makes the device self-powered. The observed improvement in the PEC performance is attributed to some synergistic effect of the p-n bilayer heterostructure on the formation of a built-in potential including the light absorption and separation processes of photoinduced charge carriers, which provides a new avenue for preparing efficient photoanodes for PEC water splitting.

• Journal of the Korean Chemical Society
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• v.64 no.2
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• pp.61-66
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• 2020

In this study, we investigate the structural and electronic properties of copper oxide clusters, Cu_nO_n (n = 9 - 15). To find the lowest energy structures of copper oxide clusters, we use ReaxFF and density functional theory calculations. We calculate many initial copper oxide clusters using ReaxFF quickly. Then we calculate the lowest energy structures of copper oxide clusters using B3LYP/LANL2DZ model chemistry. We examine the atomization energies per atom, average bond angles, Bader charges, ionization potentials, and electronic affinities of copper oxide clusters. In addition, the second difference in energies is investigated for relative energies of copper oxide clusters.