• 제목/요약/키워드: N-F doping

검색결과 50건 처리시간 0.024초

TCNQ 분자를 이용한 유기 발광 소자의 전기적 특성 (Electrical Properties of Organic Light-emitting Diodes Using TCNQ Molecules)

  • 나수환;김태완
    • 한국전기전자재료학회논문지
    • /
    • 제23권11호
    • /
    • pp.896-900
    • /
    • 2010
  • Electrical properties of organic light-emitting diodes were studied in a device with 7,7,8,8-tetracyano-quinodimethane (TCNQ) to see how the TCNQ affects on the device performance. Since the TCNQ has a high electron affinity, it is used for a charge-transport and injection layer. We have made a reference device in a structure of ITO(170 nm)/TPD(40 nm)/$Alq_3$(60 nm)/LiF(0.5 nm)/Al(100 nm). And two types of devices were manufactured. One type of device is the one made by doping 5 and 10 vol% of TCNQ to N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) layer. And the other type is the one made with TCNQ layer inserted in between the ITO anode and TPD organic layer. Organic layers were formed by thermal evaporation at a pressure of $10^{-6}$ torr. It was found that for the TCNQ doped devices, turn-on voltage of the device was reduced by about 20 % and the current efficiency was improved by about three times near 6 V. And for devices with TCNQ layer inserted in between the ITO anode and TPD layer, it was found that the current efficiency was improved by more than three times even though there was not much change in turn-on voltage.

B, C, N, F 원소 다중도핑된 TiO2의 가시광 광촉매 분해 반응 (Photo-catalytic Degradation on B-, C-, N-, and F Element co-doped TiO2 under Visible-light Irradiation)

  • 배병철;임지선;김종구;이영석
    • 공업화학
    • /
    • 제21권1호
    • /
    • pp.29-33
    • /
    • 2010
  • 본 연구에서는 여러 가지 열처리 온도에서 다성분 도핑에 의한 광촉매의 밴드갭 저감 및 가시광 광분해 효과를 알아보고자 tetraethylammonium tetrafluoroborate (TEATFB)로 B, C, N, F 등이 동시에 도핑된 $TiO_{2}$ 광촉매를 제조하였다. 도핑된 $TiO_{2}$ 광촉매가 가시광선영역에서 분해되는 정도를 확인하기 위해서 태양광에 조사하여 rhodamine B와 acridine orange로 염료분해 실험을 수행하였다. XRD 결과 $800^{\circ}C$ 이하에서 열처리된 $TiO_{2}$ 광촉매는 anatase 구조가 존재하고 있음을 알 수 있었다. XPS 분석을 통하여 광활성에 영향을 미치는 B, C, N, F의 결합구조를 확인하였고 UV-DRS 결과로부터 다성분 도핑된 $TiO_{2}$ 광촉매의 밴드 갭이 2.98 eV로 줄어든 것을 알 수 있었다. 다성분 도핑 $TiO_{2}$의 태양광 조사에 의한 UV-Vis 결과에서 acridine orange에 대한 광분해 효과가 도핑되지 않은 샘플에 비해 1.61배 증가함을 알 수 있었다. 특히, 다성분이 동시 도핑되고 $700^{\circ}C$에서 열처리된 샘플이 acridine orange과 rhodamine B 두 가지 염료 모두에서 가장 좋은 광분해 효과를 보여 주었다.

TCNQ를 사용한 유기 발광 소자의 특성 변화 (Property change of organic light-emitting diodes using a TCNQ)

  • 나수환;이원재;홍진웅;정동회;한원근;김태완
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
    • /
    • pp.275-276
    • /
    • 2009
  • We have studied physical properties of organic light-emitting diodes (OLEDs) in a device with 7,7,8,8-tetracyanoquinodimethane (TCNQ). Since the TCNQ has a high electron affinity, it is widely used for a charge-transport and injection layer. And the TCNQ-derivatives have also been used to control the conductivity of the materials. It is known that a charge injection and transport in OLEDs with a TCNQ-derivative enhances a performance of the devices such as operating voltage and efficiency. To see how the TCNQ affects on the device performance, we have made a reference device in a structure of ITO(170nm)/TPD(40nm)/$Alq_3$(60nm)/LiF(0.5nm)/Al(100nm). And several type of devices were manufactured by doping TCNQ either in TPD or $Alq_3$ layer. The TCNQ layer was also formed in between the organic layers. N,N'-diphenyl-N,N'-di(m-tolyl)-benzidine (TPD), tri(8-hydroxy quinoline) aluminium ($Alq_3$), and TCNQ layers were formed by thermal evaporation at a pressure of $10^{-6}$ torr. The deposition rate was $1.0{\sim}1.5\;{\AA}/s$ for TPD, and $1.0{\sim}1.5\;{\AA}$ for $Alq_3$. The LiF was thermally evaporated at a deposition rate of $0.2\;{\AA}/s$ successively. The device with TCNQ-derivative improved the turn-on voltage compared to the one without TCNQ-derivative.

  • PDF

가상 n형 폴리아닐린의 제조 및 전기화학적 특성평가 (Preparation of pseudo n-type Polyaniline and Evaluation of Electrochemical Properties)

  • 김래현;최선용;정건용
    • 멤브레인
    • /
    • 제13권3호
    • /
    • pp.162-173
    • /
    • 2003
  • 폴리아닐린(polyaniline, PANI)과 도판트인 camphorsulfonic acid(CSA), dodecyl benzene sulfonic acid(DBSA)와 의몰비 변화에 따라 가상 n형 PANI을 제조하였다. FT-IR측정으로부터 도핑유무를 확인하였고, indium thin oxide(ITO)에 코팅하여 제조한 전극에 대해, 순환전압전류법과 교류임피던스법을 이용하여 도판트의 영향을 조사하였다. FT-IR과 순환전압전류법으로부터, 제조된 전극이 양이온의 도핑-탈도핑이 일어나는 가상 n형의 특성을 가짐을 확인하였다. 순환전압전류법에서 산화-환원 피크전류값은 PANI/DBSA에 비하여 PANI/CSA가 약 5 배정도 더 큰 결과를 보였다. 교류임피던스법으로부터, 두 전극 모두 이상적인 Randles의 등가회로와 유사한 거동을 보였다. 전하이동저항은 PANI/CSA에서 $1.14~1.09 k{\Omega}$으로 거의 일정한 값을 보였고, PANI/DBSA는 DBSA 몰 비에 증가에 따라 $27.73{\sim}8.37K{\Omega}$으로 감소하여 나타났다. 이중층용량 또한 PANI/CSA는 $13.47{\sim}14.59 {\mu}F$으로 거의 일정하였으나, PANI/DBSA는 DBSA 몰 비 증가에 따라 $0.49{\sim}l.20 {\mu}F$으로 증가를 보였다. 결과적으로 PANI/CSA의 전기적 특성이 더 좋았으나, 도판트의 몰 비 증가에 따른 특성은 PANI/CSA 전극은 거의 일정하였고, PANI/DBSA 전극은 전기적 활성이 좋아짐을 알 수 있었다.

정전 분무법으로 제조한 β-형 PVDF 막에 미치는 니켈 질산염 첨가의 영향 (Effect of Nickel Nitrate Doping on β-type PVDF Layers Prepared by Electrostatic Spray Deposition)

  • 황규석;김명윤;손병래;황보승;노형갑
    • 전기학회논문지
    • /
    • 제67권10호
    • /
    • pp.1317-1321
    • /
    • 2018
  • PVDF as a semicrystal polymer, having a structure with C-F dipole moments, has been widely investigated because of its excellent chemical stability, mechanical strength, and ferroelectricity. In this study, ferroelectic ${\beta}$ type - PVDF layer was prepared by using an electrostatic spray deposition method and the effects of the addition of Ni-nitrate in precursor solution on the properties of PVDF layer were evaluated. Crystallinity and chemical structure of the PVDF layer were analyzed by a X-ray diffraction and Fourier Transform Infrared Spectrophotometer. Surface structure and fractured cross section of the layer were examined by a field emission-scanning electron microscope. LCR meter was used to obtain the dielectric properties of the layer. As the addition of an inorganic metal salt in PVDF sol, ${\beta}$ type - PVDF crystals were appeared in the hydrated metal salts doped-layer since the strong hydrogen bondings $(O-H{\cdots}F-C)_n$ due to high polarity of OH- were formed.

따뜻한 백색 LED의 제조를 위한 Sr3SiO5:Eu2+ 형광체에서의 융제 첨가 영향 (Influence of Fluxing Agents in Sr3SiO5:Eu2+ Phosphors for Fabrication of Warm White Light Emitting Diodes)

  • 김현호;정강섭;이승원;김병규
    • 한국세라믹학회지
    • /
    • 제49권1호
    • /
    • pp.105-110
    • /
    • 2012
  • In this paper, a yellow phosphor $Sr_3SiO_5:Eu^{2+}$ that emits efficiently at the 450 nm excitation for warm white LED is studied. In addition, the effects of various flux $BaF_2$, $NH_4Cl$ on the emission spectra were investigated. The samples were synthesized through conventional solid state reaction under reducing atmosphere of 95% $N_2$-5% $H_2$ mixture at the high temperature. All phosphors showed a excitation band from 450 nm and broad band emission peaking at region of 580 nm. The optimal concentration of $BaF_2$ flux is 3 wt% for $Sr_3SiO_5$ with doping 0.05mol Eu phosphors fired in a reductive atmosphere. The phosphor showed highest emission peaking at 582 nm.

The Possibility of 1,3,4-Oxadiazole Containing Polymer as a New Polymer Electrode in Redox Supercapacitor

  • Ryu, Kwang-Sun;Chang, Soon-Ho;Kwon, Soon-Ki;Kim, Yun-Hi;Hwang, Do-Hoon
    • Macromolecular Research
    • /
    • 제10권1호
    • /
    • pp.40-43
    • /
    • 2002
  • Poly(1', 4'-phenylene-1", 4"-(2"-(2""-ethyl-hexyloxy)) phenylene-1",4"-phenylene-2,5-oxadiazolyl) (PPEPPO) was synthesized and its electrochemical characteristics was investigated as electrode material in redox supercapacitor. The cyclic voltammetry (CV) shows there was scarcely a redox reaction and further suggests n-doping is difficult to occur in this system. However, the discharge curve between 3.0 to 0.01 V is continuously decreased like a straight line, similar to the discharge pattern of EDLC. The initial specific discharge capacitance is ~6.4 F/g, while the specific capacitance of 1000th cycle is ~0.1 F/g. The PPEPPO can be used as the electrode of supercapacitor, emissive material, as well as charge-transporting material in polymer LED.ansporting material in polymer LED.

Ab initio Study for Electronic Property and Ferromagnetism of (Cu, N, or F)-codoped ZnO

  • Kang, Byung-Sub;Chae, Kwang-Pyo
    • Journal of Magnetics
    • /
    • 제17권3호
    • /
    • pp.163-167
    • /
    • 2012
  • The effects on the ferromagnetism of the O or Zn defect in Cu-doped ZnO with the concentration of 2.77-8.33% have been investigated by the first-principles calculations. The Cu doping in ZnO was calculated to be a kind of p-type ferromagnetic half-metals. When the Zn vacancy exists in Cu-doped ZnO, the Cu magnetic moment increases, while for the O vacancy it is reduced. It is noticeable that the ferromagnetic state was originated from the hybridized O(2p)-Cu(3d)-O(2p) chain formed through the p-d coupling. The carrier-mediated ferromagnetism by nitrogen or fluorine does not depend on their concentration.

$LaAlO_3-BaZrO_3$계 perovskites의 제조 및 유전특성 (Fabrication and dielectric properties of $LaAlO_3-BaZrO_3$ perovskites)

  • 이소희;김신;신현호
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
    • /
    • pp.325-325
    • /
    • 2007
  • The perovskites in the $LaAlO_3-BaZrO_3$ system (i.e., $(1-x)LaAlO_3-xBaZrO_3$ were fabricated by a solid state reaction and their dielectric properties were investigated. For the compositions of x=0.1~0.9, the mixture of $LaAlO_3$ with a rhombohedral structure and $BaZrO_3$ with a cubic was observed when the sintering was conducted at $1500^{\circ}C$, indicating that the solubility of constituent elements was very low and a narrow solid solution region might exist. The large difference of ionic radii between $La^{3+}$ ion (0.136nm, C.N.=12) and $Ba^{2+}$ ion (0.161nm) or $Al^{3+}$ ion (0.0535nm, C.N.=6) and $Zr^{4+}$ ion (0.072nm) might hinder the mutual substitution. Within the compositions of x=0~0.7, the dielectric constant of the mixture increased with the amount of $BaZrO_3$, i.e., x value, which was in good agreement with the logarithmic mixing rule (In $_{r,i}={\Sigma}v_iln\;_{r,i}$). The increase in $BaZrO_3$ doping decreased $Q{\times}f$ value significantly due to the low $Q{\times}f$ value of $BaZrO_3$ itself, a poor microstructure of the mixture with an increased grain boundary area per volume, and defects in the cation and oxygen sub-lattices which were respectively caused by the evaporation of barium during the sintering process and the substitution of Ba on La-site or Al on Zr-site.

  • PDF

A first-principles theoretical investigation of the structural, electronic and magnetic properties of cubic thorium carbonitrides ThCxN(1-x)

  • Siddique, Muhammad;Rahman, Amin Ur;Iqbal, Azmat;Azam, Sikander
    • Nuclear Engineering and Technology
    • /
    • 제51권5호
    • /
    • pp.1373-1380
    • /
    • 2019
  • Besides promising implications as fertile nuclear materials, thorium carbonitrides are of great interest owing to their peculiar physical and chemical properties, such as high density, high melting point, good thermal conductivity. This paper reports first-principles simulation results on the structural, electronic and magnetic properties of cubic thorium carbonitrides $ThC_xN_{(1-x)}$ (X = 0.03125, 0.0625, 0.09375, 0.125, 0.15625) employing formalism of density-functional-theory. For the simulation of physical properties, we incorporated full-potential linearized augmented plane-wave (FPLAPW) method while the exchange-correlation potential terms in Kohn-Sham Equation (KSE) are treated within Generalized-Gradient-Approximation (GGA) in conjunction with Perdew-Bruke-Ernzerhof (PBE) correction. The structural parameters were calculated by fitting total energy into the Murnaghan's equation of state. The lattice constants, bulk moduli, total energy, electronic band structure and spin magnetic moments of the compounds show dependence on the C/N concentration ratio. The electronic and magnetic properties have revealed non-magnetic but metallic character of the compounds. The main contribution to density of states at the Fermi level stems from the comparable spectral intensity of Th (6d+5f) and (C+N) 2p states. In comparison with spin magnetic moments of ThSb and ThBi calculated earlier with LDA+U approach, we observed an enhancement in the spin magnetic moments after carbon-doping into ThN monopnictide.