• Advances in Energy Research
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• v.5 no.3
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• pp.219-226
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• 2017

Electrochemical double layer capacitors (EDLCs) have received a tremendous interest due to their suitability for diverse applications. They have been fabricated using different carbon based electrodes including activated carbons, single walled/multi walled carbon nano tubes. But, graphite which is one of the natural resources in Sri Lanka has not been given a considerable attention towards using for EDLCs though it is a famous carbon material. On the other hand, EDLCs are well reported with various liquid electrolytes which are associated with numerous drawbacks. Gel polymer electrolytes (GPE) are well known alternative for liquid electrolytes. In this paper, it is reported about an EDLC fabricated with a nano composite polyethylene oxide based GPE and two Sri Lankan graphite based electrodes. The composition of the GPE was [{(10PEO: $NaClO_4$) molar ratio}: 75wt.% PC] : 5 wt.% $TiO_2$. GPE was prepared using the solvent casting method. Two graphite electrodes were prepared by mixing 85% graphite and 15% polyvinylidenefluoride (PVdF) in acetone and casting n fluorine doped tin oxide glass plates. GPE film was sandwiched in between the two graphite electrodes. A non faradaic charge discharge mechanism was observed from the Cyclic Voltammetry study. GPE was stable in the potential windows from (-0.8 V-0.8 V) to (-1.5 V-1.5 V). By increasing the width of the potential window, single electrode specific capacity increased. Impedance plots confirmed the capacitive behavior at low frequency region. Galvanostatic charge discharge test yielded an average discharge capacity of $0.60Fg^{-1}$.

• Journal of Magnetics
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• v.8 no.4
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• pp.138-141
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• 2003

$Ni_{0.65}Zn_{0.35}Fe_2O_4$thin films were prepared by using a sol-gel method. Their crystallographic, dielectric and magnetic properties were investigated as a function of Cu contents by means of an X-ray diffractometer (XRD), X-ray reflectivity, LCZ meter (NF2232), a vibrating sample magnetometer (VSM), and an atomic force microscope (AFM). From typical C-V measurements for $Ni_{0.65}Zn_{0.35}Fe_2O_4$ thin films on p-type silicon substrate, the surface charge density was calculated as 1.4 ${\mu}$C/$m^2$. The dielectric constant evaluated from the capacitance at the accumulation state was 28. The high $H_{c}$ and low $M_{sat}$ at x=0.0 and 0.1 were due to the growth of the ${\alpha}$-$Fe_2O_3$ phase having antiferromagnetic properties. The rapidly decreased $H_{c}$ and increased $M_{sat}$ at x=0.2 and 0.3 can be explained that the ${\alpha}$-$Fe_2O_3$ phases have completely disappeared at x=0.3 and so, non-magnetic defects are minimized. The $M_{sat}$ was slightly decreased and the $H_{c}$ was increased above at x=0.3 because the increase of grain boundary due to smaller grain size acts as defects during magnetization process.

• Progress in Superconductivity and Cryogenics
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• v.16 no.2
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• pp.36-41
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• 2014

Temperature dependence of magnetic moment (m-T) and the magnetization (M-H) at 5 K and 20 K of the in situ processed $MgB_2$ bulk pellets with/without carbon (C) doping were examined. The superconducting critical temperature ($T_c$), the superconducting transition width (${\delta}T$) and the critical current density ($J_c$) were estimated for ten test samples taken from the $MgB_2$ bulk pellets. The reliable m-T characteristics associated with the uniform $MgB_2$ formation were obtained for both $MgB_2$ pellets. The $T_cs$ and ${\delta}Ts$ of all test samples of the undoped $MgB_2$ were the same each other as 37.5 K and 1.5 K, respectively. The $T_cs$ and ${\delta}Ts$ of the C-doped $MgB_2$ were 36.5 K and 2.5 K, respectively. Unlike the m-T characteristics, there existed the difference among the M-H curves of the test samples, which might be caused by the microstructure variation. In spite of the slight $T_c$ decrease, the C doping was effective in enhancing the $J_c$ at 5 K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.1
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• pp.1-5
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• 2016

The ultimate aims of display market is transparent or flexible. Researches have been carried out for various applications. It has been possible to reduced the process steps and get good electrical properties for semiconductors with large optical bandgaps. Oxide semiconductors have been established as one of the leading and promising technology for next generation display panels. In this paper, alternative treatment processes have been tried for oxide semiconductors of thin film transistors to increase the electrical properties of the thin film transistors and to investigate the mechanisms. There exist a various oxide semiconductors. Here, we focused on InGaZnO, ZnO and InSnZnO which are commercialized or researched actively.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.177-177
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• 2010

고효율 비정질 실리콘 박막 태양전지 제작을 위해서는 광파장대에서 optical confinement 능력을 최대화할 수 있는 기술이 필수적이다. 효율적인 photon trapping을 위해서는 back reflector를 사용하거나 전면전극인 투명전도성막의 표면에 요철을 형성하여 포획된 태양광의 내부 반사를 증가시키거나 전면 투명전극에서 반사를 감소시켜 태양광의 travel length를 증가시키는 방법이 일반적이며, 이를 통해 흡수층의 효율을 최대화할 수 있다. 이 중 전면전극으로 사용되는 투명전도성막은 불소가 도핑된 tin-oxide가 주로 사용되었으나, 최근 들어 Al이 도핑된 산화아연막을 이용한 비정질 실리콘 박막 태양전지 개발에 대한 연구도 활발히 진행되고 있다. 투명전극 증착후 표면의 유효면적을 증가시키기 위해 염산 용액을 이용하여 표면 텍스쳐링을 수행한다. 그후 흡수층인 p-i-n 층을 플라즈마 화학기상증착법을 이용하여 형성하는 것이 일반적이다. 이때 표면처리 된 투명전극은 수소플라즈마에 대해 특성이 변하지 않아야 고효율 비정질 실리콘 박막 태양전지 제조에 적용될 수 있다. 본 연구에서는 표면처리 된 AZO 투명전극의 수소플라즈마에 의한 특성 변화에 대해 고찰하였다. 먼저 AZO 투명전극은 스퍼터링 공정을 적용하여 $1\;{\mu}m$두께로 증착하였고, 0.5 wt%의 HCl 용액을 이용하여 습식 식각을 수행하였다. 수소플라즈마 처리 조건은 $H_2$ flow rate 30 sccm, working pressure 20 mtorr, RF power 300 W, Temp $60^{\circ}C$ 이며 3분간 진행하였다. 표면형상은 수소플라즈마 전 후에는 큰 차이를 보이지 않았으며 AZO의 grain size는 각각 220 nm, 210 nm로 관찰되었다. 투명전극의 가장 중요한 특성인 가시광선 영역에서의 투과도는 수소플라즈마 처리전에는 90 % 이상의 투과도를 보였으나, 수소플라즈마 처리 후에는 85 %로 약간 저하된 특성을 보였다. 그러나 이는 박막 태양전지용 전면전극으로 사용하기 위한 투과도인 80 % 이상을 만족하는 결과로, 비정질 박막 실리콘 태양전지 제작에 사용될 수 있다. 또 하나의 중요한 특성인 Haze factor 역시 수소플라즈마 처리 전 후 모두 10 이상의 값을 나타냈다. 하지만 고효율 실리콘 박막 태양전지에 적용하기 위해서는 Haze factor를 증가시키는 공정 개발에 대한 추가 연구가 필요하다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.427-427
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• 2010

전색 디스플레이의 배경조명과 일반조명으로 응용 가능한 백색 유기발광소자를 제작하기 위해서는 삼원색을 혼합하는 방법과 단색광원의 색변환을 이용하는 방법등이 제안되었다. 삼원색을 혼합하는 방법의 연구가 접근방법 및 효율개선이 용이하기 때문에 많은 연구가 진행되어왔다. 그러나 색변환 방법을 사용하는 구조는 삼원색을 혼합하는 방법에 비해 공정이 단순하며 공정 가격이 낮아지고 안정적인 구조라는 장점이 있기에, 본 연구에서는 무기물 형광체를 청색유기발광 소자에 결합하여 제작된 백색 유기발광소자의 전기적 성질과 광학적 성질을 규명하는 연구를 진행하였다. 본 연구에서는 나노크기의 균일한 형광체를 제작 할 수 있는 졸겔 방법으로 적색 형광체를 제작하였다. 졸겔 방법으로 제작된 형광체에 대한 주사현미경 측정 결과 입자의 표면이 고르며 크기가 작고 균일 하였고, 높은 온도 열처리에 따라서 용매제가 대부분 제거되었기 때문에 형광체 발광 특성이 잘 일어났음을 확인 할 수 있었다. 제작된 형광체의 광학적 성질을 조사하기 위해 형광 루미네센스 측정을 하여 발광특성을 분석하였으며 실제 청색 유기발광소자에 적용하기 위해 tris((3,5-difluoro-4-cyanophenyl)pyridine)iridium (FCNIr)-doped 3,5-bis (N-carbazolyl) benzene (mCP)를 발광층으로 사용하는 진청색의 인광 유기발광소자 배면에 무기물 형광체를 결합하여 인가한 전압에 따른 전계발광분광특성의 변화를 조사하였다. 유기발광소자와 결합된 적색 무기물 형광체는 진청색 인광 유기발광소자에서 발광된 청색빛의 일부를 흡수하여 적색으로 색변환을 하였고 이는 무기물 형광체내에 첨가된 Mn 원자에 의해 색변환이 이루어졌음을 확인하였다. 무기물 형광체를 사용한 백색 유기발광소자의 색변환 메카니즘 및 효율 증진에 대한 연구는 고효율 유기발광소자 제작을 가능하게 할 것이다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.200.2-200.2
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• 2013

Yttrium (Y)이 도핑 된 ZnO 나노 구조물을 수열합성법으로 제작하였다. 먼저 졸겔법으로 SiO2/Si 기판 위에 seed layer (Y-doped ZnO ; Y0.02Zn0.98O)를 제작하였으며 5번의 코팅을 진행하여 박막의 두께는 약 180 nm로 측정이 되었다. 그 후 진공 분위기에서 RTA를 이용하여 $500^{\circ}C$에서 3분간 열처리가 진행되었다. 이어서 수열합성법으로 mole 농도를 0.5~1.0 M 범위에서 변화시키며 YZO 시료를 제작하였다. X-ray diffraction (XRD)을 통해서 Y2O3 또는 결함과 관련된 피크는 관찰이 되지 않았으며, 모든 구조물에서 압축응력이 존재하는 알 수 있었으며, field emission scanning electron microscope (FESEM)에서 나노 구조물의 크기와 형태는 수열합성법의 mole 농도에 많은 영향을 받는 것으로 나타났다. Hall effect 측정을 통해서 모든 구조물은 n-type 전도 특성을 가지는 것으로 나타났다. 또한 광학적 특성인 photoluminescence (PL)에서는 수열합성법의 화학식을 고려할 때 Zn가 rich한 상태에서는 Zn interstitial로 존재하는 것으로 나타났고, mole 농도가 높아 질수록 free exciton에 의한 재결합인 UV emission이 우세하게 나타났다.

• Korean Journal of Materials Research
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• v.15 no.1
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• pp.73-77
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• 2005

Motivated by the enhanced magnetic properties of Mg-codoped GaMnN ferromagnetic semiconductors, Be-codoped GaMnAs films were grown via molecular beam epitaxy with varying Mn flux at a fixed Be flux. The structural, electrical, and magnetic properties were investigated. GaAs:(Mn,Be) films showed metallic behavior while GaAs:Mn films showed semiconducting behavior as determined by the temperature dependent resistivity measurements. The Hall-effect measurements with varying magnetic field showed clear anomalous Hall effect up to room temperature proving ferromagnetism and magnetotransport in the GaAs:(Mn,Be) films. Planar Hall resistance measurement also confirmed the properties. The dramatic enhancement of the Curie temperature in GaMnAs system was attributed to Be codoping in the GaMnAs films as well as MnAs precipitation.

• Korean Journal of Materials Research
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• v.16 no.12
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• pp.761-765
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• 2006

[ $II-III_2-(S,Se)_4$ ] structured of phosphor has been used at various field because those have high luminescent efficiency and broad emission band. Among these phosphors, the europium doped $BaGa_2S_4$ was prepared by solid-state method and had high potential application due to an emissive property of UV region. Also, the common sulfide phosphors were synthesized by using injurious $H_2S\;or\;CS_2$ gas. However, in this study $BaGa_2S_4:Eu^{2+}$ phosphor in addition to excess sulfur was prepared under at 5% $H_2/95%\;N_2$ reduction atmosphere. Thus, this process could be considered as large scale synthesis because of non-harmfulness and simplification. The photoluminescence efficiency of the prepared $BaGa_2S_4:Eu^{2+}$ phosphor increased 20% than that of commercial $SrGa_2S_4:Eu^{2+}$ phosphor. The prepared $BaGa_2S_4:Eu^{2+}$ could be applied to green phosphor for white LED of three wavelengths.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.145-145
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• 2010

In this paper, we report that the effects of hydrogen doping on the electrical and optical properties of typical transparent conducting oxide films such as ZnO and $SnO_2$ prepared by magnetron sputtering. Recently, density functional theory (DFT) calculations have shown strong evidence that hydrogen acts as a source of n-type conductivity in ZnO. In this work, the beneficial effect of hydrogen incorporation on Ga-doped ZnO thin films was demonstrated. It was found that hydrogen doping results a noticeable improvement of the conductivity mainly due to the increases in carrier concentration. Extent of the improvement was found to be quite dependent on the deposition temperature. A low resistivity of $4.0{\times}10^{-4}\;{\Omega}{\cdot}cm$ was obtained for the film grown at $160^{\circ}C$ with $H_2$ 10% in sputtering gas. However, the beneficial effect of hydrogen doping was not observed for the films deposited at $270^{\circ}C$. Variations of the electrical transport properties upon vacuum annealing showed that the difference is attributed to the thermal stability of interstitial hydrogen atoms in the films. Theoretical calculations also suggested that hydrogen forms a shallow-donor state in $SnO_2$, even though no experimental determination has yet been performed. We prepared undoped $SnO_2$ thin films by RF magnetron sputtering under various hydrogen contents in sputtering ambient and then exposed them to H-plasma. Our results clearly showed that the hydrogen incorporation in $SnO_2$ leads to the increase in carrier concentration. Our experimental observation supports the fact that hydrogen acting as a shallow donor seems to be a general feature of the TCOs.