• Title/Summary/Keyword: N transfer

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Effects of Different Blastocyst Production Techniques: In Vivo, In Vitro or Nuclear Transfer, on Pregnancy, Parturition and Viability of Hanwoo (한우 체내, 체외 및 복제 수정란이 이식된 수란우의 임신과 분만 및 산자의 생존)

  • Park Y. S.
    • Journal of Embryo Transfer
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    • v.19 no.3
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    • pp.239-244
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    • 2004
  • The present study was to investigate the pregnancy rate, gestation length and abortion rate of the recipients which transferred blastocysts produced by in-vivo collection, in-vitro fertilization (IVF) and nuclear transfer (NT). In addition, we investigate the birth weight and survival rate of the calves derived from the same methods. The pregnancy rate was 56.3% in-vivo blastocysts, significantly higher than 19.4% in NT blastocysts (p<0.05) but not significantly different from 30.0% in IVF blastocysts. The abortion rate and the gestation length did not differ among the treatment groups (abortion rate: 0, 22.2 and 16.7% respectively; gestation length: 278.8, 289.4 and 281.4 days respectively). The mean birth weight was significantly higher in NT calves (39.9kg) than in-vivo calves (25.5kg p<0.05). Recipients of in-vivo blastocysts (n=9) had all normal delivery and all of their calves survived on the 60$^{th}$ day from the birth. Recipients of IVF blastocysts (n=7) had all normal delivery but one of their calves died on the 48$^{th}$ day from the birth. Among recipients of NT blastocysts (n=5), three had normal delivery and two had Caesarean section. Among calves born through normal delivery (n=3) two died just after delivery but those born through Caesarean section all survived on the 60th day from the birth.

Reliability analysis of repairable k-out-n system from time response under several times stochastic shocks

  • Fang, Yongfeng;Tao, Wenliang;Tee, Kong Fah
    • Smart Structures and Systems
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    • v.14 no.4
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    • pp.559-567
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    • 2014
  • The model of unit dynamic reliability of repairable k/n (G) system with unit strength degradation under repeated random shocks has been developed according to the stress-strength interference theory. The unit failure number is obtained based on the unit failure probability which can be computed from the unit dynamic reliability. Then, the transfer probability function of the repairable k/n (G) system is given by its Markov property. Once the transfer probability function has been obtained, the probability density matrix and the steady-state probabilities of the system can be retrieved. Finally, the dynamic reliability of the repairable k/n (G) system is obtained by solving the differential equations. It is illustrated that the proposed method is practicable, feasible and gives reasonable prediction which conforms to the engineering practice.

EFFECT OF NITROGEN POSITION ON EXCITED STATE PROPERTIES OF 1-(9- ANTHRYL )-2-(n-QUINOLINYL)ETHENES

  • Shin, Eun-Ju
    • Journal of Photoscience
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    • v.6 no.2
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    • pp.61-65
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    • 1999
  • The fluorescence properties and photoisomerization behavior of 1-(9-anthryl)-2-(n-quinolinyl)ethene (n-AQE, n=2-4) have been investigated in various solvents. t-3-AQE is strongly fluorescent, but does not accomplish photoisomerization, similar to parent hydrocarbon compound, t-1-(9-anthryl)-2-phenylethene (t-9-APE) or t-1-(9-anthryl)-2-(1-naphthyl)ethene (t-1-ANE). Fluorescence and photoisomerization oft-2-AQE and t-4-AQE are strongly affected by solvent polarity. Dependence of fluorescence quantum yield on the solvent polarity is moderate for t-2-AQE and large for t-4-AQE. In nonpolar solvent (in n-hexane), they exhibit relatively strong fluorescence, but do not isomerize to cis isomer on irradiation, even if inefficient isomerization is observed for t-4-AQE. However, as solvent polarity increases, their fluorescences become weak with efficient photoisomerization to corresponding cis isomer. Intramolecular charge-transfer excited state is presumed to contribute to photoisomerization. The S$_1$ decay parameters were found to be solvent-dependent due to the charge-transfer character of lowest S$_1$ state. In polar solvents, the activation barrier to twisting is reduced enhancing the isomerization of r-2-AQE and t-4-AQE in the singlet manifold.

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Epr Spectra of $\alpha$-1,2,3-$[H_{n}PV(IV)V_{2}W_{9}O_{40}]^{(7-n)-}$(n = 1, 2 or 3). The Effects of Protonation on the Electron Transfer Rate

  • Lee, Chul-Wee;So, Hyun-Soo;Lee, Kyu-Ryong
    • Bulletin of the Korean Chemical Society
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    • v.7 no.2
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    • pp.108-110
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    • 1986
  • The solution epr spectra of ${\alpha}-1,2,3-[H_nPV(IV)V_2W_9O_{40}]^{(7-n)-}$were measured at various pH and three protonated species have been identified. The spectrum of $H_3PV(IV)Ⅴ_2$ consisting of 8 lines indicates that the V-OH-V bridge prevents effectively the electron transfer between the vanadium atoms. The spectrum of $H_2PV(IV)V_2$ consisting of 15 lines can be interpreted by assuming that the electron is hopping fast between the two vanadium atoms in the V-O-V sequence. The multi-line spectrum of $HPV(IV)V_2$ is interpreted as a poorly resolved 43-line spectrum which originates from the electron hopping among the three vanadium atoms with the forward and backward transition probabilities of 4:1 in the OH-V-O-V sequence.

Photoresponse Properties of Reduced Graphene Oxide/n-silicon Heterojunction Fabricated by the Vacuum Filtration and Transfer Method

  • Du, Yonggang;Qiao, Liangxin;Xue, Dingyuan;Jia, Yulei
    • Current Optics and Photonics
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    • v.6 no.4
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    • pp.367-374
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    • 2022
  • A photodetector based on a reduced graphene oxide (RGO)/n-Si heterojunction with high responsivity, detectivity and fast response speed is presented. Here, we put forward a simple vacuum filtration method to prepare RGO film and transfer it onto an n-Si substrate to form an RGO/n-Si heterojunction. The experimental results show that the heterojunction has good rectification characteristics, and the response and recovery time are less than 0.31 s and 0.25 s, respectively. Under 470 nm light conditions at -2 V applied voltage, the responsivity and detectivity of the device are 65 mA/W and 4.02 × 1010 cmHz1/2W-1, respectively. The simple preparation process and good performance of the RGO/n-Si heterojunction make it a promising material for photoelectric detection, especially in the near-ultraviolet band.

An Expert System for Security Assessment in Distribution System (배전계토에서의 안전도 평가를 위한 전문가 시스)

  • Park, Byoung-youn;Kim, Se-Ho;Moon, Young-Hyun
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.43 no.2
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    • pp.179-188
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    • 1994
  • This paper deals with implementation of an expert system to obtain an optimal plan of load transfer for fault restoration with the capability of security monitoring and assessment in distribution systems. Based on the technique of load transfer tree analysis, the proposed expert system can afford to assist system operators in proposing an optimal plan of load transfer for fault restoration, In paticular, an application of the proposed ES to practical distribution systems yields an optimal load transfer plan which ensures system security by considering security assessment for contingency of feeders and main transformers in the knowledge based sense.

Applicability of Bearing Capacity for Single Drilled Shaft Using Empirical equation based on Ground Condition (토질특성에 따른 현장타설말뚝 지지력 산정 경험식의 적용성)

  • Kim, Daehyeon;Jeong, Sangguk
    • Journal of the Korean Geosynthetics Society
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    • v.18 no.4
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    • pp.167-180
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    • 2019
  • Friction piles are being constructed in Southeast Asia (Myanmar, Cambodia, Vietnam, etc.) where the soft ground is deep, and many cases of friction piles are accumulated in terms of experience. In this study, we used the results of four static load test and load transfer test conducted in Myanmar sites to analyze the skin friction of soil layer. In addition, we proposed a relationship chart with skin friction measured in the N-value of Standard Penetration Test (SPT) and the load transfer test result of the single drilled shaft. In the case of Myanmar sites, the range of soil layers was deeper than domestic sites, so the conventional formula of skin friction using the N-value of SPT is different from domestic sites. In sandy layer, fs = 0.096 N in Myanmar sites showed a similar result of the domestic fs = 0.106 N. In clayey layer, fs = 0.315 N, in Myanmar sites showed about 5.0 times higher than the domestic fs = 0.062 N. The results of this study are based on limited data. Therefore, if we analyze the results of more load transfer tests, we can suggest a conventional formula for skin friction according to the N-value. It is expected to be used as important basic data in the future.

Effects of Doping in Organic Electroluminescent Devices Doped with a Fluorescent Dye

  • Kang, Gi-Wook;Ahn, Young-Joo;Lee, Chang-Hee
    • Journal of Information Display
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    • v.2 no.3
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    • pp.1-5
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    • 2001
  • The effect of doping on the energy transfer and charge carrier trapping processes has been studied in organic light-emitting diodes (OLEDs) doped with a fluorescent laser dye. The devices consisted of N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1-biphenyl-4,4'-diamine (TPD) as a hole transporting layer, tris(8-hydroxyquinoline) aluminum ($Alq_3$) as the host, and a fluorescent dye, 4-dicyanomethylene-2-methyl-6-[2-(2,3,6,7-tetrahydro-1 H,5H-benzo[i,j]quinolizin-8-yl) vinyl]-4H-pyran) (DCM2) as the dopant. Temperature dependence of the current-voltage-luminescence (I-V-L) characteristics, the electroluminescence (EL) and photoluminescence (PL) spectra are studied in the temperature ranging between 15 K and 300 K. The emission from DCM2 was seen to be much stronger compared with the emission from $Alq_3$, indicative of efficient energy transfer from $Alq_3$ to DCM2. In addition, the EL emission from DCM2 increasd with increasing temperature while the emission from the host $Alq_3$ decreased. The result indicates that direct charge carrier trapping becomes efficient with increasing temperature. The EL emission from DCM2 shows a slightly sublinear dependence on the current density, implying the enhanced quenching of excitons at high current densities due to the exciton-exciton annihilation.

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