• Korean Journal of Soil Science and Fertilizer
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• v.44 no.3
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• pp.361-367
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• 2011

Soil fertility of alpine soils in Gangwon-Do has been deteriorating because of heavy input of chemical fertilizers for intensive crop production. To reduce application of chemical fertilizers, use of livestock manure compost in alpine soils increases consistently. Soil loss and runoff due to heavy rainfall in alpine area cause nutrient loss from soil, and subsequently pollute stream water. Therefore, the objective of this study was to assess nutrient efficiency and loss in Chinese cabbage cultivated soil with different livestock manure composts in several slopes. As control, chemical fertilizer was applied at the rate of $250-78-168kg\;ha^{-1}$ for $N-P_2O_5-K_2O$. Each pig-and chicken manure compost was applied at the rate of $10MT\;ha^{-1}$. Chemical fertilizer + chicken manure compost was applied as same rate. Four treatments was practiced in 5, 20, and 35% filed slopes, respectively. We monitored the amounts of soil loss and runoff water after rainfalls, and we also analyzed the contents of nutrients in soil and runoff water through lysimeter installed in alpine agricultural institute in Gangwon-Do. T-N loss due to soil loss was much greater with increasing filed slops rather than different fertilizer treatments. T-N loss has positive relationship with field slopes, which showing soil loss (MT/ha) = 1.66 slopes (%) - 3.5 ($r^2$ = 0.99). Available phosphate and exchangeable cations showed similar tendency with increasing slopes. T-N and T-P losses caused by runoff water were highest in chemical fertilizer (NPK) + chicken manure compost treated plot, while lowest in chemical fertilizer treatment. T-N contents (2.13, 1.95%) in chinese cabbage treated either pig and chicken manure composts compared to that (2.65%) of chemical fertilizer were significantly less. This could be resulted from much greater T-N loss in soil treated with pig and chicken manure composts.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.1
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• pp.65-71
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• 2015

This paper presents the efficiency analysis of a critical current mode interleaved PFC rectifier, in which each of three different semiconductor switches is employed as the active switch. The Si FET, SiC FET, and GaN FET are consecutively used with the prototype PFC rectifier, and the efficiency of the PFC rectifier with each different semiconductor switch is analyzed. An equivalent circuit model of the PFC rectifier, which incorporates all the internal losses of the PFC rectifier, is developed. The rms values of the current waveforms main circuit components are calculated. By adapting the rms current waveforms to the equivalent model, all the losses are broken down and individually analyzed to assess the conduction loss, switching loss, and magnetic loss in the PFC rectifier. This study revealed that the GaN FET offers the highest overall efficiency with the least loss among the three switching devices. The GaN FET yields 96% efficiency at 90 V input and 97.6% efficiency at 240 V, under full load condition. This paper also confirmed that the efficiency of the three switching devices largely depends on the turn-on resistance and parasitic capacitance of the respective switching devices.

• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.3
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• pp.204-212
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• 2020

In this study, device suitability analysis is performed by comparing the performance of SiC MOSFET and GaN Transistor, which are WBG power semiconductor devices in the induction heating (IH) system. WBG devices have the advantages of low conduction resistance, switching losses, and fast switching due to their excellent physical properties, which can achieve high output power and efficiency in IH systems. In this study, SiC and GaN are applied to a general half-bridge series resonant converter topology to compare the conduction loss, switching loss, reverse conduction loss, and thermal performance of the device in consideration of device characteristics and circuit conditions. On this basis, device suitability in the IH system is analyzed. A half-bridge series resonant converter prototype using the SiC and GaN of a 650-V rating is constructed to verify device suitability through performance comparison and verified through an experimental comparison of power loss and thermal performance.

• Journal of Power Electronics
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• v.16 no.1
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• pp.84-92
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• 2016

Compared with Si MOSFETs, the GaN FET has many advantages in a wide band gap, high saturation drift velocity, high critical breakdown field, etc. This paper compares the electrical properties of GaN FETs and Si MOSFETs. The soft-switching condition and power loss analysis in a flyback-forward high gain DC/DC converter with a GaN FET is presented in detail. In addition, a comparison between GaN diodes and Si diodes is made. Finally, a 200W GaN FET based flyback-forward high gain DC/DC converter is established, and experimental results verify that the GaN FET is superior to the Si MOSFET in terms of switching characteristics and efficiency. They also show that the GaN diode is better than the Si diode when it comes to reverse recovery characteristics.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.1
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• pp.1-5
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• 2000

The C 1s photoelectron energy loss spectra of tris (8-hydroxy-quinoline) aluminum (Alq$_3$) and N,N'-diphenyl-N,N'-bis (3-methyl phenyl)-1,1'-bi-phenyl-4,4'-diamine (TPD) thin films have been investigated. Two major loss structures, namely the plasmon dominated loss lines and shake-up satellites, have been observed. The shake-up spectrum of the C 1s photoelectron line is directly related to the $\pi$-$\pi$$\^$*/ energy gap of the molecule which plays an important role in organic electroluminescent materials. The molecular orbitals of Alq$_3$ and TPD and their major components, quinolime and benzene, have been calculated with the AMI semi-empirical method. The amount of the plasma-dominated loss of Alq$_3$ and TPD, which has to do with the delocalization of electrons through the molecule, was about 24 eV, alike in both cases. The main peak of the C 1s shake-up spectrum of Alq$_3$ and TPD, however, was 5.2 eV and 6.8 eV respectively. It was found that the main shake-up peak reflects more the local $\pi$\longrightarrow$\pi$$\^$*/ transition of quinoline and benzene component rather than the excitation of the whole molecule of Alq$_3$ and TPD. The C 1s shake-up spectra, however, revealed some correlation with the optical energy gap of the organic eletroluminescent materials.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.7
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• pp.1385-1390
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• 2011

A coaxial-conical-radial transmission line conversion circuits have been investigated to realize a low loss high performance microwave power divider/combiner. In order to optimize the characteristics of the device, the power divider/combiner was designed separately with two parts-the inner part and the outer part. Utilizing the rectangular approximation of the outer part, we can design the low loss device which is not affected by the partition number N of the outer part. The small return loss which is lower than 20dB was obtained on the frequency range of 5.15GHz(7.45~12.60GHz). A conical connector was employed for smooth connection between the central coaxial line and the outer radial line. Making use of the $47^{\circ}$ and $90^{\circ}$ 2-stage conical connector, the return loss lower than 30dB was obtained on the operating frequency range of 5GHz. The total return loss of the designed divider/combiner was lower than 20dB on the frequency range of 5GHz for the partition number N=11, N=12 and N=16.

• Journal of Power Electronics
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• v.15 no.6
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• pp.1489-1498
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• 2015

Gallium nitride (GaN)-based power switching devices, such as high-electron-mobility transistors (HEMT), provide significant performance improvements in terms of faster switching speed, zero reverse recovery, and lower on-state resistance compared with conventional silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET). These benefits of GaN HEMTs further lead to low loss, high switching frequency, and high power density converters. Through simulation and experimentation, this research thoroughly contributes to the understanding of performance characterization including the efficiency, loss distribution, and thermal behavior of a 160-W GaN-based synchronous boost converter under various output voltage, load current, and switching frequency operations, as compared with the state-of-the-art Si technology. Original suggestions on design considerations to optimize the GaN converter performance are also provided.

• 한국정보통신설비학회:학술대회논문집
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• 2009.08a
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• pp.104-107
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• 2009

In this paper, we analyze the effect of interference between DTV system and IEEE 802.11n. We set DTV as a victim receiver and IEEE 802.11n as an interfering system. When they exist in the same area, they can make an interference effect. Therefore, we calculate a minimum coupling loss (MCL) and compare the resulting value with a path loss for determining whether there exists a potential interference or not. The minimum separation distance is determined when the path loss is larger than the MCL.

• Journal of Veterinary Clinics
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• v.37 no.5
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• pp.235-241
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• 2020

We aimed to determine the effect of timed artificial insemination (TAI) protocols on the pregnancy rate per insemination and pregnancy loss compared with AI performed at detected estrus in dairy cows and Korean Hanwoo cattle under heat stress. In dairy cattle, 1,250 sets of data that underwent AI during heat stress (temperature-humidity index ≥ 72) were categorized according to their TAI protocols or as controls: 1) PGF_2α-36 h-estradiol benzoate (EB)-36 h-TAI (PG-EB group, n = 113); 2) GnRH-7 days-PGF_2α-56 h-GnRH-16 h-TAI (Ovsynch group, n = 455); or 3) GnRH-6 days-Ovsynch (G6G group, n = 136). The remaining cows underwent AI at detected estrus (AIDE group, n = 546). The probability of pregnancy per AI 45 days after AI was higher (P < 0.01) in the PG-EB (odds ratio [OR]: 1.68), Ovsynch (OR: 1.48), and G6G (OR: 1.79) groups than in the AIDE group. However, the prevalence of pregnancy loss between 30 and 45 days after AI did not differ among the groups. In Hanwoo cattle, 617 sets of data inseminated artificially under heat stress were categorized into AIDE (n = 281), PG-EB (n = 194), and combined Ovsynch or G6G (n = 142) groups. The probability of pregnancy per AI 45 days after AI and the prevalence of pregnancy loss between 30 and 45 days after AI did not differ among the groups. Thus, implementation of a TAI protocol (PG-EB, Ovsynch, or G6G) in dairy cows under heat stress improves the pregnancy rate per AI versus AIDE, whereas there is no beneficial effect of TAI on the pregnancy rate of Hanwoo cattle under heat stress.

• Textile Coloration and Finishing
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• v.26 no.4
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• pp.331-338
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• 2014

In this research, split-type complex yarn of 20:80, 40:60, 50:50 nylon6/polyester composition ratio was used in order to impose unique sense on split-type complex woven. After treating both split-type complex yarn of each ratio and its produced woven in alkali solution, we got the following results by checking physical properties based on alkali proportion and treatment time. Under the condition of NaOH 20% in this experiment, it took approximately double time 20% loss of weight. The loss of weight became high when polyester proportion of N/P(nylon6/polyester) composition ratio was low, in the same fineness yarn. Even though polyester proportion was low, the loss of weight was low when the fineness was high. N/P division was well processed at about 25% loss of weight under the condition of NaOH 20%, treatment temperature $50^{\circ}C$, and treatment time 60 minutes. The research provides that the loss of weight should be processed around treatment time 24 hours in the case of NaOH concentration 15%, and treatment time 15 hours in the case of NaOH concentration 18%, respectively, in order to achieve N/P woven division ratio of about 70%-80% in industrial fields.