• 전기학회논문지
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• 제66권9호
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• pp.1351-1358
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• 2017

In this work, we investigated radiation hardness of GaN-based transistors which are strong candidates for next-generation power electronics. Field effect transistors with three types of gate structures including metal Schottky gate, recessed gate, and p-AlGaN layer gate were fabricated on AlGaN/GaN heterostructure on Si substrate. The devices were irradiated with energetic protons and alpha-particles. The irradiated transistors exhibited the reduction of on-current and the shift of threshold voltage which were attributed to displacement damage by incident energetic particles at high fluence. However, FET operation was still maintained and leakage characteristics were not degraded, suggesting that GaN-based FETs possess high potential for radiation-hardened electronics.

• 한국광학회:학술대회논문집
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• 한국광학회 2001년도 제12회 정기총회 및 01년도 동계학술발표회
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• pp.54-55
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• 2001

Recently, there has been much interests in InGaN/GaN multiple-quantum-well (MQW) structures due to their applicability as optoelectronic devices such as light-emitting diodes (LEDs) and laser diodes [1]. Their ultrafast and physical properties are also of significant interests. Anomalously large acoustic phonon oscillations have been observed using ultrafast lasers in InGaN MQWs [2]. In this study, we have peformed femtosecond pump-probe experiments in the reflection geometry on 5 periods InGaN/GaN MQW LED structure with well width of 20$\AA$ and barrier width of 100$\AA$ at room temperature. (omitted)

• 한국군사과학기술학회지
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• 제19권3호
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• pp.319-329
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• 2016

Current research trends of prediction of possible structures, synthesis and explosive characteristics of polynitrogen molecules(PNs) are reviewed. Theoretically PNs are composed only of nitrogen atoms, in which N-N bonds are either single or double bonds, and thus when these molecules decompose, release of enormous energy is accompanied. From the middle of 20th century energetic material chemists have been seeking possible structures and the methods of synthesis of these new materials. As a results, from $N_4$ to $N_{60}$ together with their ions are predicted, and experimental chemists have been trying to synthesize these materials with a few success, including the famous ${N_5}^+$ ion in 1999. Although experimental successes are very rare beyond $N_5$ until today, the author believes that renovative ideas together with sincere efforts will bring someday next generation of high energy materials such as nitrogen fullerene($N_{60}$) in reality.

• 한국환경과학회지
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• 제18권11호
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• pp.1215-1224
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• 2009

This study evaluated the applicability of visible-light-driven N- and S-doped titanium dioxide($TiO_2$) for the control of low-level dimethyl sulfide(DMS) and dimethyl disulfide(DMDS). In addition, a photocatalytic unit(PU)-adsorption hybrid was evaluated in order to examine the removal of DMS and DMDS which exited the PU and a gaseous photocatalytic byproduct($SO_2$) which was generated during the photocatalytic processes. Fourier-Tranform-Infrared(FTIR) spectrum exhibited different surface characteristics among the three-types of catalysts. For the N- and S-doped $TiO_2$ powders, a shift of the absorbance spectrum towards the visible-light region was observed. The absorption edge for both the N- and S-doped $TiO_2$ was shifted to $\lambda$ 720 nm. The N-doped $TiO_2$ was superior to the S-doped $TiO_2$ in regards to DMS degradation. Under low input concentration(IC) conditions(0.039 and 0.027 ppm for DMS and DMDS, respectively), the N-doped $TiO_2$ revealed a high DMS removal efficiency(above 95%), but a gradual decreasing removal efficiency under high IC conditions(7.8 and 5.4 ppm for DMS and DMDS, respectively). Although the hybrid system exhibited a superior characteristic to PU alone regarding the removal efficiencies of both DMS and DMDS, this capability decreased during the course of a photocatalytic process under the high IC conditions. The present study identified the generation of sulfate ion on the catalyst surface and sulfur dioxide(maximum concentrations of 0.0019 and 0.0074 ppm for the photocatalytic processes of DMS and DMDS, respectively) in effluent gas of PU. However, this generation of $TiO_2$ would be an insignificant addition to indoor air quality levels.

• 한국농공학회지
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• 제45권7호
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• pp.49-56
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• 2003

Nonpoint source pollutant loading from watershed may cause a problem to the water quality of the reservoir and stream. The characteristics of stream flow and water quality were monitored to investigate the runoff loading of the Namdae-cheon watershed from May in 1999 to October in 2003. Stage-discharge rating curve at the stream gauging site was established, and annual stream runoff of the study watershed was estimated as 499.4∼1,330.8mm during four years. The concentrations of total-nitrogen and total-phosphorus of stream water quality ranged from 0.76 to 6.95mg/L and from 0.0010 to 0.2276 mg/L, respectively, where T-N was generally higher than the water quality standard 1.0 mg/L for agricultural water use. The loads by unit generation of pollutant mass with respect to population, livestock, land use in this watershed were calculated. The runoff pollutant loadings by concentrations of total-N and total-P were estimated during study period, where the annual runoff loading of total-P was much less than the load by pollutant mass unit generation. The relations between stream discharge and water quality were analysed, and there was a high correlation for total-N but low for total-P. These results will be used to develop the monitoring techniques and water quality management system of agricultural watershed.

• 한국세라믹학회지
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• 제50권3호
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• pp.173-179
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• 2013

Wurtzite nanomaterials, such as ZnO, GaN, and InN, have become a subject of great scientific and technological interest as they simultaneously have piezoelectric and semiconductor properties. In particular, the piezoelectric potential (piezopotential) created by dynamic straining in the nanowires drives a transient flow of current in the external load, converting mechanical energy into electricity. Further, the piezopotential can be used to control the carrier generation, transport, separation, and/or recombination at the metal-semiconductor junction or p-n junction, which is called the piezophototronic effect. This paper reviews the recent advances on the piezophototronic effect to better use the piezophototronic effect to control the carrier generation, transport, separation and/or recombination for improving the performance of optoelectronic devices, such as photon detectors, solar cells and LEDs. This paper also discusses several research and design studies that have improved the output performance of optoelectronic devices.

• 전자공학회논문지S
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• 제36S권6호
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• pp.9-16
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• 1999

이 논문에서는 렘펠의 D-준동현사상을 바탕으로 하여 드브루인 수열을 만드는 효과적인 알고리즘을 제안한다. 이 알고리즘에서는 k차 드브루인 수열에서 n차 드브루인 수열의 다음 비트을 만드는데 필요한 배타논리합 연산수는, r의 2진 표현에서 1의 갯수를 W(r)이라 쓸 때, $k(2^{W(n-k)}-1)$쯤임을 보인다: 딸서, 드브루인 함수를 잘 고르면 이 수는 k가 된다.

• Journal of Electrical Engineering and Technology
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• 제1권4호
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• pp.414-422
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• 2006

Deterministic techniques have been applied in power system planning for many years and there is a growing interest in combining these techniques with probabilistic considerations to assess the increased system stress due to the restructured electricity environment. The overall reliability framework proposed in this paper incorporates the deterministic N-1 criterion in a probabilistic framework, and results in the joint inclusion of both adequacy and security considerations in system planning. The combined framework is achieved using system well-being analysis and traditional adequacy assessment. System well-being analysis is used to quantify the degree of N-1 security and N-1 insecurity in terms of probabilities and frequencies. Traditional adequacy assessment is Incorporated to quantify the magnitude of the severity and consequences associated with system failure. The concepts are illustrated by application to two test systems. The results based on the overall reliability analysis framework indicate that adequacy indices are adversely affected by a generation deficient environment and security indices are adversely affected by a transmission deficient environment. The combined adequacy and security framework presented in this paper can assist system planners to realize the overall benefits associated with system modifications based on the degree of adequacy and security, and therefore facilitate the decision making process.

• 한국전기전자재료학회논문지
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• 제17권11호
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• pp.1246-1251
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• 2004

This paper is investigated about the effect of carrier gas type and the humidity for generating hydrogen gas. The vibration of the water surface is more powerful with increasing applied voltage. In this experimental reactor which is made of multi-needle and plate, the maximum acquired hydrogen production rate is about 3500 ppm. In the experimental result of generating hydrogen gas by non-thermal plasma reactor, the rate of generating hydrogen gas is different with what kind of carrier gas is. We used two types of carrier gas, such as $N_2$ and He. $N_2$ as carrier gas is more efficient to generate hydrogen gas than He because $N_2$ is reacted with $O_2$, which is made from water dissociation. In comparison with water droplet by humidifier and without water droplet by humidifier, the generation of hydrogen gas is decreased in case of water droplet by humidifier. That is the result that the energy for water dissociation is reduced on water surface because a part of plasma energy is absorbed at the small water molecular produced from humidifier.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.215-219
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• 2004

This paper is investigated about the effect of carrier gas and humidity for generating hydrogen gas. In the experimental result of generating hydrogen gas by non-thermal plasma reactor, the rate of generating hydrogen gas is different with what kind of carrier gas is. We used two types of carrier gas, such as $N_2$ and He. $N_2$ as carrier gas is more efficient to generate hydrogen gas than He because $N_2$ is reacted with $O_2$, which is made from water dissociation. In comparison with no humidity and humidity 45[%], the generation of hydrogen gas is decreased with increasing the humidity. That is the result that the energy for water dissociation is reduced on water surface because a part of plasma energy is absorbed at the small particle produced from humidifier.