• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.63-70
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• 1992

Deposition properties and film characteristics of Remote PECVD silicon dioxide were investigated. Using $N_{2}O/SiH_{4}$, the effects of changing the process conditions` the pressure, the substrate temperature, and the gas mixing ration, on the film quality were observed. A comparison of film qualites of the Remote PECVD SiO$_2$ with that of a Direct PECVD SiO$_2$ was made. The experimental results show that the Remote PECVD SiO$_2$ has better electrical, physical, and annealing properties than the Direct PECVD oxide.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1061-1064
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• 2003

In this paper, we deposited A1$_2$O$_3$ thin film using atomic layer deposition(ALD) method on Ti and fabricated metal-insulator-metal(MIM) capacitor. In the result of this study, the typical deposition rate was about 1.12$\AA$/cycle. About 30 nm of Ti was consumed during deposition and TiO$_{x}$ was formed at the interface of A1$_2$O$_3$ and Ti. Its surface roughness was 1.54nm. The leakage current density was 1.5 nA/$\textrm{cm}^2$. The temperature coefficient of capacitance(TCC) of MIM capacitor was 41 ppm/$^{\circ}C$ at 1MHz and 100 ppm/$^{\circ}C$ at 100 kHz.z.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.288-291
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• 2001

It is very important to select suspension solution for forming electrophoretic deposited YBCO thick mm, because it is heavily affected to its superconducting properties. In this paper, high-temperature superconductor films of $YBa_{2}Cu_{3}O_{7-x}$ were fabricated by electrophoretic deposition (EPD) from alcohol-based suspension such as iso-propanol, iso-butanol, and their mixture. For the formation of YBCO dense and adherent coating on a silver wire by EPD, 1 % PEG(1000) 2 ml, as a additive for making their surface crack-free, was used for electrophoresis. As a results, the cracks were considerably decreased and the superconducting critical current density $(J_e)$ without/with PEG was $1200A/cm^2$ and $2020A/cm^2$, which films deposited in mix iso-propanol and iso-butanol suspension.

• Journal of Surface Science and Engineering
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• v.24 no.1
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• pp.8-8
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• 1991

To investigate the effects of substrate on transverse-rupture strength(TRS) and bonding strength between substrate and TiC layer coated by CVD, two kinds of substrate (substrate A:WC-9.5wt%Co-MC*[low C], substrate B: WC-6wt% Co-MC*[high C] were studied in terms of Cobalt and C contents respectively. For preparation of test samples the coating parameters of deposition time, deposition temperature and deposition pressure were varied. The result show that the carbon contents in substrates have greater effects on the TRS of the CVD TiC coated cemented carbide than Co contents in substrates.

• Journal of Biosystems Engineering
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• v.19 no.4
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• pp.369-379
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• 1994

A computer vision system consisted of a microscope, a CCD camera, a frame grabber and a personal computer was used to analyze spraying pattern. An algorithm was developed for the system to measure size of droplets including overlapped droplets, to count number of droplets, and to estimate spray deposition in a certain area from the data obtained. A series of experiment was carried out to test validity of the algorithm. The experiment resulted that accuracy of the droplet size measurement, accuracy of counting the number of droplets and the estimation of spray deposition were within an acceptable range. It was concluded from the results that the computer vision system operated by the developed algorithm is very useful tool to analyze spraying pattern.

• Journal of the Korean Vacuum Society
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• v.4 no.3
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• pp.275-282
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• 1995

III족 원료 가스로 triethylgallium(TEGa)과 trimethylindium(TMIn)을 사용하고 V족 원료 가스로 사전 열 분해하지 않은 arsine(AsH3)과 monoethylarsine(MEAs)을 사용하여 ultrahigh vacuum chemical vapor deposition(UHVCVD)법으로 Si3N4로 패턴된 GaAs(100)기판 위에 GaAs와 InGaAsqkr막을 선택적으로 에피택시 성장을 하였다. V족 원료 가스를 사전 열 분해하지 않으므로 넓은 성장 온도 구간과 V/lll 비율에서도 선택적으로 박막이 성장되었다. 또한 선택 에피택시의 성장 메카니즘을 규명하기 위하여 다양한 filling factor(전체면적중 opening된 면적의 비율)를 가지는 기판을 제작하여 성장에 사용하였다. UHVCVD법에서는 마스크에 면적중 opening된 면적의 비율)를 가지는 기판을 제작하여 성장에 사용하였다. UHVCVD법에서는 마스크에 입사된 분자 상태의 원료 기체가 탈착된 후 표면 이동이나 가스 상태의 확산과정 없이 마스크로부터 제거되므로 패턴의 크기와 모양에 따른 성장 속도의 변화나 조성의 변화가 없을 뿐만 아니라 chemical beam epitaxy(CBE)/metalorganic molecular beam epitaxy(MOMBE)법에서 알려진 한계 성장온도 이하에서 선택 에피택시 성장이 이루어졌다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.436-440
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• 2003

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/ $O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz]. SCT thin films used in this study showed the phenomena of dielectric relaxation with the increase of frequency.ncy.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1383-1386
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• 1997

Dimond-like carbon(DLC) films have been deposited by using both rf plasma-enhanced chemical vapor deposition (PECVD) and filtered cathodic vacuum arc (FCVA) deposition systems. Effects of deposition conditions, such as dc self-bias, $CH_4$ gas pressure, substrate bias, and $N_2$ partial pressure, on the structural and electrical properties of DLC films are examined. The experimental results obtained have also been discussed by considering a theoretical model for film growth.

• Journal of the Korean Ceramic Society
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• v.30 no.8
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• pp.678-684
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• 1993

Alumina composite membranes were prepared by chemical vapor deposition and evaporation-oxidation process. For CVD process, deposition was carried out using aluminum-tri-isopropoxide at 35$0^{\circ}C$, 2 torr by heterogeneous reaction, and for evaporation-oxidation process, alumina composite membranes were prepared by evaporation of aluminum and dry oxidation at 80$0^{\circ}C$. As deposition time increases, water flux and N2 gas permeability of the composite membranes prepared by both processes were reduced. Applying gas permeation model, permeability and cracking possibility of top layer were evaluated.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.180-182
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• 2002

Copper thin films are prepared by a chemical vapor deposition technology for multi-level metallzations in ULSI fabrication. The copper films were deposited on TiN/Si substrates in helium atmosphere with the substrate temperature between $120^{\circ}C$ and $300^{\circ}C$. In order to get more reliable metallizations, effects on the post-annealing treatment to the electrical properties of the copper films have been investigated. The Cu films were annealed at the $5\times$10^{-6}$ Torr vacuum condition, and the electrical resistivity and the nano-structures were measured for the Cu films. The electrical resistivity of Cu films shown to be reduced by the post-annealing. The electrical resistivity of 2.2 $\mu$$\Omega$.cm was obtained for the sample deposited at the substrate temperature of $180^{\circ}C$ after vacuum annealed at $300^{\circ}C$. The resistivity variations of the films was not exactly matched with the size of the nato-structures of the copper grains, but more depended on the deposition temperature of the copper films.