• 자원환경지질
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• 제24권2호
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• pp.107-129
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• 1991

The Yonghwa gold-silver deposits are emplaced along $N15^{\circ}{\sim}25^{\circ}W$ trending fissures in middle Cretaceous porphyritic granite or Precambrian Sobaegsan gneiss complex. The results of paragenetic studies suggest that vein filling can be subdivided into four identifiable stages; state I: the main sulfide stage, characterized by base-metal sulfide minerals, iron oxides and minor electrum, stage II: electrum stage, stage III: electrum and silver-bearing sulfosalts stage, stage IV: post ore stage of carbonates and quartz. The ore mineralogy suggests that depositional temperature of the formation of the gold and silver minerals are estimated as 200 to $250^{\circ}C$ and 140 to $180^{\circ}C$, respectively. Sulfur fugacity of the formation of the gold and silver minerals are estimated as $10^{-14.0}$ to $10^{-12.2}$ atm and $10^{-18.5}$ to $10^{-17.2}$ atm, respectively. A consideration of the pressure regime during ore deposition bases on the fluid inclusion evidence of boiling suggests lithostatic pressure of less than 180 bars. This range of pressure indicate that vein system lay at depth of 700m below the surface at the time during mineralization. Salinities of ore-bearing fluids range from 0.4 to 6.9 wt.% equivalent NaCl. The sulfur and carbon isotopic data reveal that these elements were probably derived from a deep-seated source. The ${\delta}^{18}O$ of the hydrothermal fluid was determined from ${\delta}^{18}O$ values of quartz and calcite. Oxygen and hydrogen isotopic studies reveal that meteoric water dominate over ore-bearing fluid.

• 센서학회지
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• 제5권1호
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• pp.63-70
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• 1996

RTCVD (rapid thermal chemical vapor deposition) 법을 이용하여 급준한 불순물 농도분포를 갖는 서브마이크론 두께의 실리콘 에피막을 성장하였다. 실리콘 에피막 성장은 $SiH_{2}Cl_{2}\;/\;H_{2}$ 혼합가스를 사용하고, $H_{2}$ probating 공정을 포함하는 여러 가지 공정변수들을 변화하면서 성장계면에서의 불순물 농도 분포의 계면특성 및 성장율, 결정성등을 평가하였다. 실리콘 에피막의 결정성은 $900^{\circ}C$ 에서 $H_{2}$ prebaking 공정 후 동일한 온도에서 성장한 경우에 전위등의 결함이 보이지 않았으며, $SiH_{2}Cl_{2}$ 원료가스의 부피비에 따라 실리콘 에피막의 성장율을 선택함으로서 에피막 두께를 서브마이크론 까지 조절할 수 있었다. 실리콘에피막의 불순물 농도분포는 성장 계면에서 약 $200{\AA}/decade$ 로 급격하게 조절될 수 있음을 SIMS 법에 의한 분석으로 확인하였다.

• 한국표면공학회지
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• 제45권6호
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• pp.248-256
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• 2012

A Pd-based hydrogen membranes for hydrogen purification and separation need high hydrogen perm-selectivity. The surface roughness of the support is important to coat the pinholes free and thin-film membrane over it. Also, The pinholes drastically decreased the hydrogen perm-selectivity of the Pd-based composite membrane. In order to remove the pinholes, we introduced various surface pre-treatment such as alumina powder packing, nickel electro-plating and micro-polishing pre-treatment. Especially, the micro-polishing pretreatment was very effective in roughness leveling off the surface of the porous nickel support, and it almost completely plugged the pores. Fine Ni particles filled surface pinholes with could form open structure at the interface of Pd alloy coating and Ni support by their diffusion to the membrane and resintering. In this study, a $4{\mu}m$ surface pore-free Pd-Cu-Ni ternary alloy membrane on a porous nickel substrate was successfully prepared by micro-polishing, high temperature sputtering and Cu-reflow process. And $H_2$ permeation and $N_2$ leak tests showed that the Pd-Cu-Ni ternary alloy hydrogen membrane achieved both high permeability of $13.2ml{\cdot}cm^{-2}{\cdot}min^{-1}{\cdot}atm^{-1}$ permation flux and infinite selectivity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.424-427
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• 2002

In this papaer, there is a basic research for the development of the Hybrid digital radiation detector with a new system, make up for existing digital radiation detector of direct/indirect method with a weak point. for enhance the efficiency characteristics of signal response from X-ray detector using the a-Se, We make sample with various kinds of layer, through the ratio of As(0.l%,0.3%,0.5%,1%,1.5%,5%,10%). We measure net charge with a leakage current and photo current for electric charateristics. Ratio of As in a-Se consist of 7 stage, It made of using the thermal deposition system, In the made of samples, we made multi layer using the EFIRON optical adhesives from phosphor layer consist of Oxybromide$(BrO_2)$. As a result of X-ray measurement, the best result is ; leakage current(0.30nA/cm2), net charge(610.13pC/cm2/mR) when the condition is voltage(9V/um), 0.3% ratio of As in multi layer(BrO2 + a-Se)

• 한국재료학회지
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• 제17권9호
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• pp.484-488
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• 2007

Mo(Ti) alloy and pure Cu thin films were subsequently deposited on $SiO_2-coated$ Si wafers, resulting in $Cu/Mo(Ti)/SiO_2$ structures. The multi-structures have been annealed in vacuum at $100-600^{\circ}C$ for 30 min to investigate the outdiffusion of Ti to Cu surface. Annealing at high temperature allowed the outdiffusion of Ti from the Mo(Ti) alloy underlayer to the Cu surface and then forming $TiO_2$ on the surface, which protected the Cu surface against $SiH_4＋NH_3$ plasma during the deposition of $Si_3N_4$ on Cu. The formation of $TiO_2$ layer on the Cu surface was a strong function of annealing temperature and Ti concentration in Mo(Ti) underlayer. Significant outdiffusion of Ti started to occur at $400^{\circ}C$ when the Ti concentration in Mo(Ti) alloy was higher than 60 at.%. This resulted in the formation of $TiO_2/Cu/Mo(Ti)\;alloy/SiO_2$ structures. We have employed the as-deposited Cu/Mo(Ti) alloy and the $500^{\circ}C-annealed$ Cu/Mo(Ti) alloy as gate electrodes to fabricate TFT devices, and then measured the electrical characteristics. The $500^{\circ}C$ annealed Cu/Mo($Ti{\geq}60at.%$) gate electrode TFT showed the excellent electrical characteristics ($mobility\;=\;0.488\;-\;0.505\;cm^2/Vs$, on/off $ratio\;=\;2{\times}10^5-1.85{\times}10^6$, subthreshold = 0.733.1.13 V/decade), indicating that the use of Ti-rich($Ti{\geq}60at.%$) alloy underlayer effectively passivated the Cu surface as a result of the formation of $TiO_2$ on the Cu grain boundaries.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.396-396
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• 2013

The resistive random access memory (ReRAM) has several advantages to apply next generation non-volatile memory device, because of fast switching time, long retentions, and large memory windows. The high mobility of monolayered graphene showed several possibilities for scale down and electrical property enhancement of memory device. In this study, the monolayered graphene grown by chemical vapor deposition was transferred to $SiO_2$ (100 nm)/Si substrate and glass by using PMMA coating method. For formation of metal-oxide nanoparticles, we used a chemical reaction between metal films and polyamic acid layer. The 50-nm thick BPDA-PDA polyamic acid layer was coated on the graphene layer. Through soft baking at $125^{\circ}C$ or 30 min, solvent in polyimide layer was removed. Then, 5-nm-thick indium layer was deposited by using thermal evaporator at room temperature. And then, the second polyimide layer was coated on the indium thin film. After remove solvent and open bottom graphene layer, the samples were annealed at $400^{\circ}C$ or 1 hr by using furnace in $N_2$ ambient. The average diameter and density of nanoparticle were depending on annealing temperature and times. During annealing process, the metal and oxygen ions combined to create $In_2O_3$ nanoparticle in the polyimide layer. The electrical properties of $In_2O_3$ nanoparticle ReRAM such as current-voltage curve, operation speed and retention discussed for applictions of transparent and flexible hybrid ReRAM device.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.636-636
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• 2013

Since first discovery of strong Raman spectrum of molecules adsorbed on rough noble metal, surface enhanced Raman scattering (SERS) has been widely used for detection of molecules with low concentration. Surface plasmons at noble metal can enhance Raman spectrum and using Au nanostructures as substrates of SERS has advantages due to it has chemical stability and biocompatibility. However, the photoluminescence (PL) background from Au remains a problem because of obtaining molecular vibration information. Recently, graphene, two-dimensional atomic layer of carbon atoms, is also well known as PL quenchers for electronic and vibrational excitation. In this study, we observed SERS of single layer graphene on or under monolayer of Au nanoparticles (NPs). Single layer graphene is grown by chemical vapor deposition and transferred onto or under the monolayer of Au NPs by using PMMA transfer method. Monolayer of Au NPs prepared using Langmuir-Blodgett method on or under graphene surface provides closed and well-packed monolayer of Au NPs. Scanning electron microscopy (SEM) and Raman spectroscopy (WItec, 532 nm) were performed in order to confirm effects of Au NPs on enhanced Raman spectrum. Highly enhanced Raman signal of graphene by Au NPs were observed due to many hot-spots at gap of closed well-packed Au NPs. The results showed that single layer graphene provides larger SERS effects compared to multilayer graphene and the enhancement of the G band was larger than that of 2D band. Moreover, we confirm the appearance of D band in this study that is not clear in normal Raman spectrum. In our study, D band appearance is ascribed to the SERS effect resulted from defects induced graphene on Au NPs. Monolayer film of Au NPs under the graphene provided more highly enhanced graphene Raman signal compared to that on the graphene. The Au NPs-graphene SERS substrate can be possibly applied to biochemical sensing applications requiring highly sensitive and selective assays.

• 한국표면공학회지
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• 제18권4호
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• pp.153-163
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• 1985

In the electroless nickel plating bath which contained nickel sulfate, sodium hypophosphite, boric acid and triethanolamine, effect of their concentration on the rate of deposition was tested by gravimetric method and polarization method. The polarization method that polarize small range of voltage anodicaly and cathodicaly at the mixed potential in the electroless plating bath can calculate mixed current (depositing rate) from $i_{mp}=\frac {i}{\eta}\;\frac{RT}{nF}\;or\;i_{mp}=\frac{i}{\eta}\;\frac{1}{2.3}(\frac{b_a\;\;b_c}{b_c+b_a})$ Where $i_{mp}$ is the depositing current, i is the polarized current, ${\eta}$ is the polarized voltage, $b_a\;and\;b_c$ are the Tafel slop of anodic and cathodic polarization curves respectively. The calculated mixed current ($i_{mp}$) is proportional to the depositing rate obtained by gravimetric method and corresponded mostly to the real depositing rate by multifying supplementary constant. The polarization method can be used for founding inclination of reaction on various concentration of each composition. Decreasing or increasing concentration of triethanolaminc as a complexing agent , the depositing rate is decreased and when the bath contained 25-50mL/L of triethanoloamine, the depositing rate is increased. The depositing rate is increased with increasing the concentration of boric acid, and when the bath contained 0.5M of boric acid, the depositing rate is increased abruptly. The optimum composition of the electroless nickel bath was estimated 0.1M of nickel sulfate, 0.25M of sodium hypophosphite, 0.5M of boric acid, and 25-50mL/L of triethanalamine.

• 한국결정성장학회지
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• 제25권4호
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• pp.145-152
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• 2015

rf-PECVD 방법에 의해서 $CH_4+H_2$ 혼합가스를 이용Si-웨이퍼 위에 DLC 박막을 증착할 때, 이산화탄소나 질소 등 보조가스가 증착된 박막의 결합구조와 기계적 특성에 미치는 영향을 고찰하였다. DLC 박막의 증착속도는 rf-power가 증가함에 따라서 증가하지만, 보조가스의 양이 증가함에 따라서는 감소하였다. 또한, 이산화탄소($CO_2$) 가스가 증가함에 따라 박막내 수소 함량은 감소하였으나, $sp^3/sp^2$ 결합 비는 증가하였다. 질소($N_2$) 가스가 증가하는 경우는 수소 함량은 감소하였으나, $sp^3/sp^2$ 결합비 변화에 있어 경향성은 보이지 않는 것으로 확인되었다.

• Carbon letters
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• 제8권2호
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• pp.108-114
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• 2007

In this work, activated carbon (AC) after $HNO_3$ modification was used as the support during the production of supported $TiO_2$ to increase the high deposition efficiency and the photocatalytic activity. The results of $N_2$ adsorption showed that the BET surface area of samples decreased with an increasing of the concentration of $HNO_3$ due to the penetration of $TiO_2$. From XRD data, a single crystal structure of anatase peak was observed in diffraction patterns for the AC coated with titanium complexes. From the SEM results, almost all particles were aggregated with each other at the carbon surface and AC was covered with $TiO_2$ particles in all of the samples. The EDX spectra show the presence of C, O, Ti and other elements. It was also observed a decreasing of amount of C content with increasing Ti and O content from the EDX. The results of FT-IR revealed that the modified AC contained more surface oxygen bearing groups than that of the original AC. The effect of surface acidity and basity calculated from Boehm titration method was also evaluated from correlations as a function of NaOH, $NaHCO_3$, and $Na_2CO_3$ uptake. The surface modification of AC by $HNO_3$ leads to an increase in the catalytic efficiency of AC/$TiO_2$ catalysts, and the catalytic efficiency increases with increasing of $HNO_3$ concentration.