• Title/Summary/Keyword: N deposition

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Heat dissipation of Al2O3 Insulation layer Prepared by Anodizing Process for Metal PCB (Metal PCB에 있어서 양극산화법으로 제작한 Al2O3절연막의 방열특성)

  • Jo, Jae-Seung;Kim, Jeong-Ho;Ko, Sang-Won;Lim, Sil-Mook
    • Journal of the Korean institute of surface engineering
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    • v.48 no.2
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    • pp.33-37
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    • 2015
  • High efficiency LED device is being concerned due to its high heat loss, and such heat loss will cause a shorter lifespan and lower efficiency. Since there is a demand for the materials that can release heat quickly into the external air, the organic insulating layer was required to be replaced with high thermal conductive materials such as metal or ceramics. Through anodizing the upper layer of Al, the Breakdown Voltage of 3kV was obtained by using an uniform thickness of $60{\mu}M$ aluminum oxide($Al_2O_3$) and was carried out to determine the optimum process conditions when thermal cracking does not occur. Two Ni layers were formed above the layer of $Al_2O_3$ by sputtering deposition and electroplating process, and saccharin was added for the purpose of minimizing the remain stress in electroplating process. The results presented that the 3-layer film including the Ni layer has an adhesive force of 10N and the thermal conductivity for heat dissipation is achieved by 150W/mK level, and leads to improvement about 7 times or above in thermal conductivity, as opposed to the organic insulation layer.

Surface Treatment of Ge Grown Epitaxially on Si by Ex-Situ Annealing for Optical Computing by Ge Technology

  • Chen, Xiaochi;Huo, Yijie;Cho, Seongjae;Park, Byung-Gook;Harris, James S. Jr.
    • IEIE Transactions on Smart Processing and Computing
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    • v.3 no.5
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    • pp.331-337
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    • 2014
  • Ge is becoming an increasingly popular semiconductor material with high Si compatibility for on-chip optical interconnect technology. For a better manifestation of the meritorious material properties of Ge, its surface treatment should be performed satisfactorily before the electronic and photonic components are fabricated. Ex-situ rapid thermal annealing (RTA) processes with different gases were carried out to examine the effects of the annealing gases on the thin-film quality of Ge grown epitaxially on Si substrates. The Ge-on-Si samples were prepared in different structures using the same equipment, reduced-pressure chemical vapor deposition (RPCVD), and the samples annealed in $N_2$, forming gas (FG), and $O_2$ were compared with the unannealed (deposited and only cleaned) samples to confirm the improvements in Ge quality. To evaluate the thin-film quality, room-temperature photoluminescence (PL) measurements were performed. Among the compared samples, the $O_2$-annealed samples showed the strongest PL signals, regardless of the sample structures, which shows that ex-situ RTA in the $O_2$ environment would be an effective technique for the surface treatment of Ge in fabricating Ge devices for optical computing systems.

Photovoltaic Performence of Dye-sensitized Solar Cells using ZnO nanostructures (ZnO 나노구조체를 이용한 염료감응형 태양전지의 광전효율)

  • Lee, JeongGwan;Cheon, JongHun;Kim, NaRee;Kim, JaeHong
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.90.1-90.1
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    • 2010
  • Due to the rapidly diminishing energy sources and higher energy production cost, the interest in dye-sensitized solar cells (DSSCs) has been increasing dramatically in recent years. A typical DSSC is constructed of wide band gap semiconductor electrode such as $TiO_2$ or ZnO that are anchored by light-harvesting sensitizer dyes and surrounded by a liquid electrolyte with a iodide ion/triiodide ion redox couple. DSSCs based on one-dimensional nano-structures, such as ZnO nanorods, have been recently attracting increasing attention due to their excellent electrical conductivity, high optical transmittance, diverse and abundant configurations, direct band gap, absence of toxicity, large exiton binding energy, etc. However, solar-to-electrical conversion performances of DSSCs composed of ZnO n-type photo electrode compared with that of $TiO_2$ are not satisfactory. An important reason for the low photovoltaic performance is the dissolution of $Zn^{2+}$ by the adsorption of acidic dye followed by the formation of agglomerates with dye molecules which could block the I-diffusion pathway into the dye molecule on the ZnO surface. In this paper, we prepared the DSSC with the ZnO electrode using the chemical bath deposition (CBD) method under low temperature condition (< $100^{\circ}C$). It was demonstrated that the ZnO seed layers played an important role on the formation of the ZnO nanostructures using CBD. To achieve truly low-temperature growth of the ZnO nanostructures on the substrates, a two-step method was developed and optimized in the present work. Firstly, ZnO seed layer was prepared on the FTO substrate through the spin-coating method. Secondly, the deposited ZnO seed substrate was immersed into an aqueous solution of 0.25M zinc nitrate hexahydrate and 0.25M hexamethylenetetramine at $90^{\circ}C$ for hydrothermal reaction several times.

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Effect of Growell on Performance, Organ Weight and Serum Trace Element Profile of Broilers

  • Kalorey, D.R.;Kurkure, N.V.;Sakhare, P.S.;Warke, Subhangi;Ali, Murtuza
    • Asian-Australasian Journal of Animal Sciences
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    • v.14 no.5
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    • pp.677-679
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    • 2001
  • Effect of Growell a herbomineral premix was evaluated on performance, organ weight, humoral immune response, tissue and serum trace element profile of boilers. Day old 50 Babcock broiler chicks were randomly divided in two groups (C and T) and reared on deep litter system for 6 weeks of age. Chicks from group C were given basal diet while chicks from T group were fed basal diet supplemented with Growell at the rate 0.35 g/Kg. The chicks were vaccinated with Lasota strain of NCDV at $4^{th}$ and $28^{th}$ day of age. The birds receiving Growell treatment had higher body weight with better feed conversion ratio as compare to that of control chicks. Growell treatment had significantly reduced per cent weight of spleen and kidney, whereas that of bursa was increased. There was no effect of treatment on relative weight of thymus. HI antibody titer against NCDV in Growell treated chicks were higher as compare to untreated chicks indicating better humoral immune status. Growell treatment had no effect on serum Fe and Zn concentration. Dietary supplementation of Growell had significantly increased iron content of liver, kidney and muscle; zinc content of kidney and muscle; copper content of kidney and muscle and Mn content of kidney. Growell treatment improved the body weight, FCR and humoral immune status of broilers. Similarly, deposition of trace minerals in various organs was also increased in comparison to control.

Aging effect of Solution-Processed InGaZnO Thin-Film-Transistors Annealed by Conventional Thermal Annealing and Microwave Irradiation

  • Kim, Gyeong-Jun;Lee, Jae-Won;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.211.1-211.1
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    • 2015
  • 최근 용액 공정을 이용한 산화물 반도체에 대한 연구가 활발히 진행되고 있다. 넓은 밴드갭을 가지고 있는 산화물 반도체는 높은 투과율을 가지고 있어 투명 디스플레이에 적용이 가능하다. 기존의 박막 진공증착 방법은 진공상태를 유지하기 위한 장비의 가격이 비싸며, 대면적의 어려움, 높은 생산단가 등으로 생산율이 높지 않다. 하지만 용액 공정을 이용하면 대기압에서 증착이 가능하고 대면적화가 가능하다. 그리고 각각의 조성비를 조절하는 것이 가능하다. 이러한 장점에도 불구하고, 소자의 신뢰성이나 저온공정은 중요한 이슈이다. Instability는 threshold voltage (Vth)의 shift 및 on/off switching의 신뢰성과 관련된 parameter이다. 용액은 소자의 전기적 특성을 열화 시키는 수분 과 탄소계열의 불순물을 다량 포함 하고 있어 고품질의 박막을 형성하기 위해서는 고온의 열처리가 필요하다. 기존의 열처리는 고온에서 장시간 이루어지기 때문에 유리나 플라스틱, 종이 기판의 소자에서는 불가능하지만 $100^{\circ}C$ 이하의 저온 공정인 microwave를 이용하면 유리, 플라스틱, 종이 기판에서도 적용이 가능하다. 본 연구에서는 산화물 반도체 중에서 InGaZnO (IGZO)를 용액 공정으로 제작한 juctionless thin-film transistor를 제작하여 기존의 열처리를 이용하여 처리한 소자와 microwave를 이용해서 열처리한 소자의 전기적 특성을 한 달 동안 관찰 하였다. 또한 In:Zn의 비율을 고정한 후 Ga의 비율을 달리하여 특성을 비교하였다. 먼저 p-type bulk silicon 위에 SiO2 산화막이 100 nm 증착된 기판에 RCA 클리닝을 진행 하였고, solution InGaZnO 용액을 spin coating 방식으로 증착하였다. Coating 후에, solvent와 수분을 제거하기 위해서 $180^{\circ}C$에서 10분 동안 baking공정을 하였다. 이후 furnace열처리와 microwave열처리를 비교하기 위해 post-deposition-annealing (PDA)으로 furnace N2 분위기에서 $600^{\circ}C$에서 30분, microwave를 1800 W로 2분 동안 각각의 샘플에 진행하였다. 또한, HP 4156B semiconductor parameter analyzer를 이용하여 제작된 TFT의 transfer curve를 측정하였다. 그 결과, microwave 열처리한 소자의 경우 기존의 furnace 열처리 소자와 비교하여 높은 mobility, 낮은 hysteresis 값을 나타내었으며, 1달간 소자의 특성을 관찰하였을 때 microwave 열처리한 소자의 경우 전기적 특성이 거의 변하지 않는 것을 확인하였다. 따라서 향후 용액공정, 저온공정을 요구하는 소자 공정에 있어 열처리방법으로 microwave를 이용한 활용이 기대된다.

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Immobilization of Horseradish Peroxidase to Electrochemically Deposited Gold-Nanoparticles on Glassy Carbon Electrode for Determination of H2O2

  • Ryoo, Hyun-woo;Kim, You-sung;Lee, Jung-hyun;Shin, Woon-sup;Myung, No-seung;Hong, Hun-Gi
    • Bulletin of the Korean Chemical Society
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    • v.27 no.5
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    • pp.672-678
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    • 2006
  • A new approach to fabricate an enzyme electrode was described based on the immobilization of horseradish peroxidase (HRP) on dithiobis-N-succinimidyl propionate (DTSP) self-assembled monolayer (SAM) formed on gold-nanoparticles (Au-NPs) which were electrochemically deposited onto glassy carbon electrode (GCE) surface. The overall surface area and average size of Au-NPs could be controlled by varying deposition time and were examined by Field Emission-Scanning Electron Microscope (FE-SEM). The $O_2$ reduction capability of the surface demonstrated that Au-NPs were thermodynamically stable enough to stay on GCE surface. The immobilized HRP electrode based on Au-NPs/GCE presented faster, more stable and sensitive amperometric response in the reduction of hydrogen peroxide than a HRP immobilized on DTSP/gold plate electrode not containing Au-NPs. The effects of operating potential, mediator concentration, and pH of buffer electrolyte solution on the performance of the HRP biosensor were investigated. In the optimized experimental conditions, the HRP immobilized GCE incorporating smaller-sized Au-NPs showed higher electrocatalytic activity due to the high surface area to volume ratio of Au-NPs in the biosensor. The HRP electrode showed a linear response to $H_2O_2$ in the concentration range of 1.4 $\mu$M-3.1 mM. The apparent Michaelis-Menten constant ($K _M\; ^{app}$) determined for the immobilized HRP electrodes showed a trend to be decreased by decreasing size of Au-NPs electrodeposited onto GCE.

Structural, Electrical and Optical Properties of $HfO_2$ Films for Gate Dielectric Material of TTFTs

  • Lee, Won-Yong;Kim, Ji-Hong;Roh, Ji-Hyoung;Moon, Byung-Moo;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.331-331
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    • 2009
  • Hafnium oxide ($HfO_2$) attracted by one of the potential candidates for the replacement of si-based oxides. For applications of the high-k gate dielectric material, high thermodynamic stability and low interface-trap density are required. Furthermore, the amorphous film structure would be more effective to reduce the leakage current. To search the gate oxide materials, metal-insulator-metal (MIM) capacitors was fabricated by pulsed laser deposition (PLD) on indium tin oxide (ITO) coated glass with different oxygen pressures (30 and 50 mTorr) at room temperature, and they were deposited by Au/Ti metal as the top electrode patterned by conventional photolithography with an area of $3.14\times10^{-4}\;cm^2$. The results of XRD patterns indicate that all films have amorphous phase. Field emission scanning electron microscopy (FE-SEM) images show that the thickness of the $HfO_2$ films is typical 50 nm, and the grain size of the $HfO_2$ films increases as the oxygen pressure increases. The capacitance and leakage current of films were measured by a Agilent 4284A LCR meter and Keithley 4200 semiconductor parameter analyzer, respectively. Capacitance-voltage characteristics show that the capacitance at 1 MHz are 150 and 58 nF, and leakage current density of films indicate $7.8\times10^{-4}$ and $1.6\times10^{-3}\;A/cm^2$ grown at 30 and 50 mTorr, respectively. The optical properties of the $HfO_2$ films were demonstrated by UV-VIS spectrophotometer (Scinco, S-3100) having the wavelength from 190 to 900 nm. Because films show high transmittance (around 85 %), they are suitable as transparent devices.

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Enhanced compatibility and initial stability of Ti6Al4V alloy orthodontic miniscrews subjected to anodization, cyclic precalcification, and heat treatment

  • Oh, Eun-Ju;Nguyen, Thuy-Duong T.;Lee, Seung-Youp;Jeon, Young-Mi;Bae, Tae-Sung;Kim, Jong-Gee
    • The korean journal of orthodontics
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    • v.44 no.5
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    • pp.246-253
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    • 2014
  • Objective: To evaluate the bioactivity, and the biomechanical and bone-regenerative properties of Ti6Al4V miniscrews subjected to anodization, cyclic precalcification, and heat treatment (APH treatment) and their potential clinical use. Methods: The surfaces of Ti6Al4V alloys were modified by APH treatment. Bioactivity was assessed after immersion in simulated body fluid for 3 days. The hydrophilicity and the roughness of APH-treated surfaces were compared with those of untreated (UT) and anodized and heat-treated (AH) samples. For in vivo tests, 32 miniscrews (16 UT and 16 APH) were inserted into 16 Wistar rats, one UT and one APH-treated miniscrew in either tibia. The miniscrews were extracted after 3 and 6 weeks and their osseointegration (n = 8 for each time point and group) was investigated by surface and histological analyses and removal torque measurements. Results: APH treatment formed a dense surface array of nanotubular TiO2 layer covered with a compact apatite-like film. APH-treated samples showed better bioactivity and biocompatibility compared with UT and AH samples. In vivo, APH-treated miniscrews showed higher removal torque and bone-to-implant contact than did UT miniscrews, after both 3 and 6 weeks (p < 0.05). Also, early deposition of densely mineralized bone around APH-treated miniscrews was observed, implying good bonding to the treated surface. Conclusions: APH treatment enhanced the bioactivity, and the biomechanical and bone regenerative properties of the Ti6Al4V alloy miniscrews. The enhanced initial stability afforded should be valuable in orthodontic applications.

The characteristics of Pt thin films prepared by DC magnetron sputter (DC Magnetron Sputter로 제조된 Pt 박막의 특성)

  • Na, Dong-Myong;Kim, Young-Bok;Park, Jin-Seong
    • Journal of Sensor Science and Technology
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    • v.16 no.2
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    • pp.159-164
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    • 2007
  • Thin films of platinum were deposited on a $Al_{2}O_{3}/ONO(SiO_{2}-Si_{3}N_{4}-SiO_{2})/Si$-substrate with an 2-inch Pt(99.99 %) target at room temperature for 20, 30 and 60 min by DC magnetron sputtering, respectively X-ray diffract meter (XRD) was used to analyze the crystallanity of the thin films and field emission scanning electron microscopy (FE-SEM) was employed for the investigation on crystal growth. The densification and the grain growth of the sputtered films have a considerable effect on sputtering time and annealing temperatures. The resistance of the Pt thin films was decreased with increasing deposition time and sintering temperature. Pt micro heater thin film deposited for 60 min by DC magnetron sputtering on an $Al_{2}O_{3}$/ONO-Si substrate and annealed at $600^{\circ}C$ for 1 h in air is found to be a most suitable micro heater with a generation capacity of $350^{\circ}C$ temperature and 645 mW power at 5.0 V input voltage. Adherence of Pt thin film and $Al_{2}O_{3}$ substrate was also found excellent. This characteristic is in good agreement with the uniform densification and good crystallanity of the Pt film. Efforts are on progress to find the parameters further reduce the power consumption and the results will be presented as soon as possible.

Surface Characterization of NF membranes for Hardness Removal and Its Implications to Fouling Mechanisms (경도제거용 나노여과막의 표면 특성 분석 및 막오염기작 연구)

  • Ham, Sangwoo;Kim, Youngjin;Kim, Chunghwan;Shon, Hokyong;Hong, Seungkwan
    • Journal of Korean Society on Water Environment
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    • v.29 no.4
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    • pp.559-567
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    • 2013
  • In recent years, NF (nanofiltration) membrane has been receiving great attention for hardness removal and has begun to replace traditional lime soda ash softening process, particularly in Florida, USA, mainly due to less sludge production and easy operation. This study aimed to provide detailed surface characteristics of various commercial NF membranes by performing sophisticated surface analysis, which would help more fundamentally understand the performance of NF membranes. More specifically, a total of 7 NF membranes from top NF/RO manufacturers in the world were examined for basic performance tests, surface analysis, and fouling potential assessment. The results demonstrated that NF membranes are classified into two groups in terms of surface zeta potential; they are highly negatively charged ones, and neutral and/or less negatively charged ones. Their hydrophobicities, measured by contact angle, varied from hydrophilic to slightly hydrophobic ones. The AFM measurements showed various surface roughness, ranging from 23 nm (smooth) to 162 nm (rough) of average peak height. Lab-scale fouling experiments were performed using feedwater obtained from conventional water treatment plants in the province of Korea, and their results attempted to correlate to surface characteristics of NF membranes. However, unlike typical RO membranes, no clear correlation was found in this study, indicating that fouling mechanisms of NF membrane may be different from those of typical RO membranes, and both cake deposition and pore blocking mechanisms should be considered simultaneously.