• Journal of the Korean Ceramic Society
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• v.46 no.3
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• pp.301-305
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• 2009

The novel carbon coating process for interlayer of fiber reinforced ceramic composites between fiber and matrix was performed by carbonizing phenolic resin solution that coated on fiber surface in $N_2$ atmosphere at $600^{\circ}C$ to improve the strength and fracture toughness of CMC(ceramic matrix composite). 160 nm carbon layer was coated on fiber surface with 5 vol% of phenolic resin solution. Since the process temperature ($600^{\circ}C$) is lower than chemical vapor deposition($900{\sim}1000^{\circ}C$), the strength and toughness could be preserved. Furthermore the coating thickness uniformity was improved to 8% of deviation along the stacking sequence. Therefore, prevention from fiber degradation during coating process and controlling coating thickness uniformity along the preform depth were achieved by coating with phenolic resin carbonizing method.

• The Journal of Korean Medicine
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• v.23 no.3
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• pp.43-53
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• 2002

Objectives : To investigate the photoprotective effects and efficacy of Jaummi-dan (Ciyinmei-dan) on UV damage to animal skin/fibroblast cultures. Methods and Results : Hairless mice were orally administered Jaummi-dan (Ciyinmei-dan) extract and irradiated with UV for four weeks. In the Jaummi-dan (Ciyinmei-dan) treated group, a better skin appearance and less wrinkles were observed when compared to the control group. In addition, immunostaining for type 1 pN collagen showed that the amount of collagen deposition was higher in the Jaummi-dan (Ciyinmei-dan) treated group. The interstitial collagenase was measured in the cultured medium of fibroblasts after UVB irradiation using ELISA for MMP-l. Jaummi-dan (Ciyinmei-dan) treatment resulted in a significant decrease in MMP-1 secretion compared to the UVB-irradiated, untreated group. Conclusions : The results of our study indicate that orally administered Jaummi-dan (Ciyinmei-dan) seems to have photoprotective effects on UV damaged hairless mouse skin partly due to an inhibitory effect on collagen breakdown.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.407-407
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• 2012

화학기상증착법(CVD; Chemical Vapor deposition)으로 h-BN을 증착하여 성장 시간에 따른 표면의 특성 및 결정성을 연구하였다. 암모니아 보레인(BH3NH3)을 보론 나이트라이드(Boron Nitride) 박막의 전구물질로 이용하였으며, $70{\sim}120^{\circ}C$로 열을 가하여 열분해하였다. $25{\mu}m$ 두께의 구리 기판을 챔버에 넣어서 Low pressure (~25 mTorr) 상태가 되도록 한다. 25 mTorr 이하의 압력에서 수소 가스 (0.2~1sccm)를 넣고 $20^{\circ}C$/min로 가열한 후 약 한 시간 후에 $990{\sim}1,000^{\circ}C$가 된다. 그 후 Cu foil의 표면을 부드럽게 하고, 산화막을 제거하기 위해 $990^{\circ}C$에서 40 분간 열처리(annealing)한다. 그 후 암모니아 보레인에서 분해된 보라진 가스(borazine; B3H6N3)로 h-BN을 합성한다. 성장 시간이 길수록 더 많은 부분이 보론 나이트라이드에 의해 덮인다는 것을 관찰하였고, 성장 시 주입하는 수소의 양(0.2~5 sccm)과 알곤(0~15 sccm)의 혼합 비율에 따라 보론 나이트라이드의 domain size가 변화함을 알 수 있었다. 그 각각의 차이를 주사 전자현미경(SEM; Scanning Electron Microscopy)을 통해 확인하고, 결정성을 라만 분광(Raman spectroscopy), 광전자 분광(XPS; X-ray photoelectron spectroscopy)으로 비교 분석하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.1009-1014
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• 2012

Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.171-171
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• 2012

We have studied the effects of plasma treatments on CdS buffer layers in CIGS thin film solar cells. The CdS layers were deposited on CIGS films by chemical bath deposition (CBD) method. The RF plasma treatments of the CdS thin films were performed with Ar, $O_2 and $N_2 gases, respectively. After plasma treatments, the solar cells with Al:ZnO/i-ZnO/CdS/CIGS structures were fabricated. The surface properties of the CdS/CIGS thin films after plasma treatments were investigated with SEM, EDX and AFM measurements. The electrical properties of manufactured solar cell were discussed with the results of current-voltage measurements. The plasma treatments have a strong influence on the open circuit voltage (VOC) and the fill factor of the solar cells. Finally, a correlation between the surface properties of CdS layer and the efficiencies of the CIGS thin film solar cells is discussed.

• Bulletin of the Korean Chemical Society
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• v.34 no.6
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• pp.1755-1762
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• 2013

A graphene-Zn/Al layered double hydroxide composite film was simultaneously prepared by electrochemical deposition on the surface of a glassy carbon electrode (G-LDH/GCE) from the mixture solution containing GO and nitrate salts of $Zn^{2+}$ and $Al^{3+}$. The modified electrode showed good electrochemical performances toward the simultaneous electrochemical detection of hydroquinone (HQ), catechol (CA) and resorcinol (RE) due to the unique properties of graphene (G) and LDH such as large active surface area, facile electronic transport and high electrocatalytic activity. The redox characteristics of G-LDH/GCE were investigated with cyclic voltammetry and differential pulse voltammetry. The well-separated oxidation peak potentials, corresponding to the oxidation of HQ, CA and RE, were observed at 0.126 V, 0.228 V and 0.620 V respectively. The amperometric response of the modified electrode exhibited that HQ can be detected without interference of CA and RE. Under the optimized conditions, the oxidation peak current of HQ is linear with the concentration of HQ from 6.0 ${\mu}M$ to 325.0 ${\mu}M$ with the detection limit of 0.077 ${\mu}M$ (S/N=3). The modified electrode was successfully applied to the direct determination of HQ in a local tap water, showing reliable recovery data.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.40-49
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• 2001

We have developed a repeatable process of forming uniform, small-size and high-density self-assembled Si nano-crystals. The Si nano-crystals were fabricated in a conventional LPCVD (low pressure chemical vapor deposition) reactor at $620^{\circ}c$ for 15 sec. The nano-crystals were spherical shaped with about 4.5 nm in diameter and density of $5{\times}l0^{11}/$\textrm{cm}^2$. More uniform dots were fabricated on nitride film than on oxide film. To take advantage of the above-mentioned characteristics of nitride film while keeping the high interface quality between the tunneling dielectrics and the Si substrate, nitride-oxide tunneling dielectrics is proposed in n-channel device. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of ${\Delta}Ｖ_{GS}\;{\approx}\;1.7{\;}V$, corresponding to single and multiple electron storage is reported. The feasibility of p-channel nano-crystal memory with thin oxide in direct tunneling regime is demonstrated. The programming mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate programming voltage, hole tunneling component from inversion layer is dominant. However, valence band electron tunneling component from the valence band in the nano-crystal becomes dominant for large gate voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.509-512
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• 2004

This paper proposed a new solid State Relay(SSR) structure that can replace the conventional SSR as a power IC. The photodiode arrays, the main part of this structure, were designed and integrated in the same power It chip with the output parts, LDMOSFET and BJT, on a SOI substrate. The fabrication of this input part shared the same output LDMOSFET fabrication processs, except the additional deposition of Silicon nitride($Si_3N_4$) for the photo-detection part. According to LED illumination intensites and photo detecting areas, we could obtain voltage of 0.49V ${\~}$0.52V and current of 5.5uA ${\~}$ 108uA respectively from the fabricated unit photodiode. The maximum value of the voltage and the current we could obtain from the photodiode array were 3.58V and 24.4uA respectively, and the voltage was enough to operate the output LDMOSFET

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.1265-1268
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• 2005

In this study, the synthesis and semiconducting properties of cation and defect-doped $KTaO_3$ film is reported. $KTaO_3$ is an important material for optoelectronic and tunable microwave applications. It is an incipient ferroelectric with a cubic structure that becomes ferroelectric when doped with Nb. While numerous studies have investigated the thin-film growth of semiconducting perovskites, little is reported about semiconducting $KTaO_3$ thin films. In this work, the films were grown on (001) MgO single crystal substrates using pulsed-laser deposition. Semiconducting behavior is achieved by inducing oxygen vacancies in the $KTaO_3$ lattice via growth in a hydrogen atmosphere. The resistivity of semiconducting $KTaO_3:Ca$ films was as low as 10cm, and n-type semiconducting behavior was indicated. Hall mobility and carrier concentration were $0.27cm^2/Vs$ and $3.21018cm^{-3}$, respectively. Crystallinity and microstructure of the $KTaO_3:Ca$ films were examined using X-ray diffraction and field-emission scanning microscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.203-203
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• 2015

Gallium Oxide (Ga2O3) has been widely investigated for the optoelectronic applications due to its wide bandgap and the optical transparency. Recently, with the development of fabrication techniques in nanometer scale semiconductor materials, there have been an increasing number of extensive reports on the synthesis and characterization of Ga2O3 nano-structures such as nano-wires, nano-belts, and nano-dots. In contrast to typical vapor-liquid-solid growth mode with metal catalysts to synthesis 1-dimensional nano-wires, there are several difficulties in fabricating the nano-structures by using sputtering techniques. This is attributed to the fact that relatively low growth temperatures and higher growth rate compared with chemical vapor deposition method. In this study, Ga2O3 nanowires (NWs) were synthesized by using radio-frequency magnetron sputtering method. The NWs were then coated by Au thin films and annealed under Ar or N2 gas enviroment with no supply of Gallium and Oxygen source. Several samples were prepared with varying the post annealing parameters such as gas environment annealing time, annealing temperature. Samples were characterized by using XRD, SEM, and PL measurements. In this presentation, the details of fabrication process and physical properties of branched Ga2O3 NWs will be reported.