• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.336-339
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• 2007

The enhanced control of OLED deposition processes by Organic Vapor Phase Deposition $(OVPD^{(R)})$ is discussed. $OVPD^{(R)}$ opens a wide space of process control parameters. It allows the accurate and individual control of deposition layer properties like morphology and precise mixing of multi component layers (co-deposition) in comparison to conventional deposition manufacturing processes like e. g. VTE (vacuum thermal evaporation).

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.2
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• pp.62-67
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• 2013

The influence of internal stress and joint strength(shear, tensile) according to the deposition conditions was investigated by the Polyimide substrate and ZnO thin film. Deposition thickness and temperature affect the internal stress and the internal stress was minimum at the 60nm and $200^{\circ}C$ of the deposition conditions. Tensile strength is large at the deposition condition that shear strength is large and the shear strength was about 50% of the tensile strength. The shear strength and tensile strength were large at deposition condition that internal stress was small. Crack occurred near the joint interface of Polyimide substrate and progressed along the interface until the final fracture.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.323-330
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• 1989

Wear restance titanium carbonitride (TiCN) films were deposited on the SKH9 tool steels and WC-Co cutting tools by plasma assisted chemical vapor deposition (PACVD) using a gaseous mixture of TiCl4, CH4, N2, H2 and Ar. The effects of the deposition temperature and RF(Radio Frequency) power on the deposition rate, chlorine content and crystallinity of the deposited layer were studied. The experimental results showed that the stable and adherent films could be obtained above the deposition temperature of 47$0^{\circ}C$ and maximum deposition rate was obtained at 485$^{\circ}C$. The deposition rate was much affected by RF power and maximum at 40W. The crystallinity of the deposited layer was improved with increasing the deposition temperature and RF power. The TiCN films deposited by PACVD contained much chlorine. The chlorine content in the TiCN films was affected by deposition conditions and decreased with improving the crystallinity of the deposited layer. The deposited TiCN films deposited at the deposition temperature of 52$0^{\circ}C$ and RF power of 40W had an uniform surface with very fine grains of about 500$\AA$ size. The microhardness of the deposited layer was 2,300Kg/$\textrm{mm}^2$.

• Journal of Korea Water Resources Association
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• v.46 no.5
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• pp.531-545
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• 2013

This paper was considered on the applicability of EFDC KUNSAN_SEDTRAN MODEL (2012) to calculate Gunsan Port sediment deposition height efficiently and to use for grasping its aspects quantitatively and providing its prevention measures reasonably based on well-known 3-dimensional EFDC sediment transport module. This model was calibrated and verified with various measured field data of A Report of Hydrological Variation on Kum River Estuary (2004). Due to the model calibration and relevant literature investigation for cohesive sediment parameters, settling velocity (WS), critical deposition stress (TD), reference surface erosion rate (RSE), critical erosion stress (TE) were identified as 2.2E-04m/s, 0.20 $N/m^2$, 0.003 $g/s{\cdot}m^2$, 0.40 $N/m^2$ respectivly on this model. In order to examine the applicability and precision of the model computation, the calculated model data of sediment deposition height at 13 stations for 71 days and suspended-sediment concentration at 2 stations, inner port and outer port for 15 days were compared and analyzed with the measured field data. As a result, the model applicability for sediment deposition height simulation was evaluated as NSE coefficient 0.86 and the precision for suspended-sediment concentration computation was evaluated as time averaged relative error (RE) 23%.

• Journal of IKEEE
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• v.24 no.4
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• pp.1117-1121
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• 2020

In this work, it was confirmed that a SnO2 catalyst deposited by an atomic layer deposition(ALD) process can be employed in AlGaN/GaN heterostructure FET to detect NO2 gas. The fabricated HFET sensors on AlGaN/GaN-on-Si platform demonstrated that the devices with or without n-situ SiN have sensitivity of 5.5 % and 38 % at 200 ℃, respectively with response to 100 ppm-NO2.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.114-119
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• 2004

Silicon Nitride thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method at $550^{\circ}C$ using alternating exposures of $SiH_2Cl_2$ and $NH_3$, and the physical and electrical propeties of the deposited films were characterized. The thickness of the films was linearly increased with the number of deposition cycles, and the growth rate of the films was 0.13 nm/cycle with the reactant exposures of $3.0\times10^{9}$ L. The silicon nitride thin films deposited by Alf exhibited similar physical properties with the silicon nitride thin films deposited by low-pressure chemical vapor deposition (LPCVD) method in terms of refractive index and wet etch rate, lowering deposition temperature by more than 200 $^{\circ}C$. The ALD films showed the leakage current density of 0.79 nA/$\textrm{cm}^2$ at 3 MV/cm, which is lower than 6.95 nA/$\textrm{cm}^2$ of the LPCVD films under the same condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.465-471
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• 1998

Diamond-like carbon (DLC) films have been prepared by means of the plasma enhanced chemical vapor deposition (PECVD) method using vertical-capacitor electrodes. The deposition rata in our experiment is relatively small compared with that in the conventional PECVD methods, which implies that the accumulation of the neutral $CH_n$ radicals on the substrates due to the gravitational movement may not contribute to the deposition of DLC films. The hardness and the transparency were measured as a function of the ratio of the partial pressure of $CH_4-H_2$ mixtures or the hydrogen contents of specimens. The coefficients of friction between DLC films and a $Si_3N_4$ tip measured by using a lateral force microscope are in the range of 0.024 to 0.033 which depend on the hydrogen contents in DLC, and the surface roughness depends mainly on the deposition rate. The optical gaps increase with increasing the hydrogen contents. DCL films deposited on Pt-coated Si wafers show the stable emission characteristics, and the turn-on fields are in the range of 11 to 20 $V/\mu$m.

• Korean Journal of Materials Research
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• v.18 no.6
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• pp.302-306
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• 2008

Polycrystalline germanium (Ge) thin films were grown by metal organic chemical vapor deposition (MOCVD) using tetra-allyl germanium [$Ge(allyl)_4$], and germane ($GeH_4$) as precursors. Ge thin films were grown on a $TiN(50nm)/SiO_2/Si$ substrate by varying the growth conditions of the reactive gas ($H_2$), temperature ($300-700^{\circ}C$) and pressure (1-760Torr). $H_2$ gas helps to remove carbon from Ge film for a $Ge(allyl)_4$ precursor but not for a $GeH_4$ precursor. $Ge(allyl)_4$ exhibits island growth (VW mode) characteristics under conditions of 760Torr at $400-700^{\circ}C$, whereas $GeH_4$ shows a layer growth pattern (FM mode) under conditions of 5Torr at $400-700^{\circ}C$. The activation energies of the two precursors under optimized deposition conditions were 13.4 KJ/mol and 31.0 KJ/mol, respectively.

• Membrane Journal
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• v.2 no.1
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• pp.21-32
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• 1992

Hydrogen-permselective silica membranes were synthesized within tim walls of porous Vycor tubes by chemical vapor depostion of $SiO_2$. Film deposition was carried out using $SiCl_4$ hydrolysis either in the oppm shag reactants or in the one-sided geometry. At temperatures above $600^{\circ}C$ the permeation rate of hydrogen thorough the silica films varied between 0.01 and $025cm^3(STP)/cm^2-min-atm$ depending on the reaction geometry and the $H_2 : N_2$ permeation ratio was about 1000. Permeation rates of both $H_2$ and $N_2$ increased with increasing temperature. The silica membranes produced by one-sided deposition have higher hydrogen permmeation rates than those produced by the opposing reactants geometry although the membranes formed in an opposing reactants geometry were relatively stable during the heat treatment or after exposure to ambient air. These membranes can be applied to high temperature gas separations or membrane reactors once the film deposition process is optimized to get high permeability as well as good stability.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.141-145
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• 2004

Silicon nitride thin films were deposited by atomic layer deposition (ALD) technique in a batch-type reactor by alternating exposures of precursors. XJAKO200414714156408$_4$ or$ SiH_2$$Cl_2$ was used as the Si precursor, $NH_3$ was used as the N precursor, and the deposited films were characterized comparatively. The thickness of the film linearly increased with the number of deposition cycles, so that the thickness of the film can be precisely controlled by adjusting the number of cycles. As compared with the deposition using$ SiCl_4$, the deposition using $SiH_2$$Cl_2$ exhibited larger deposition rate at lower precursor exposures, and the deposited films using $SiH_2$$Cl_2$ had lower wet etch rate in a diluted HF solution. Silicon nitride films with the Si:N ratio of approximately 1:1 were obtained using either Si precursors at $500^{\circ}C$, however, the films deposited using $SiH_2$$Cl_2$ exhibited higher concentration of H as compared with those of the $SiC_4$ case. Silicon nitride thin films deposited by ALD showed similar physical properties, such as composition or integrity, with the silicon nitride films deposited by low-pressure chemical vapor deposition, lowering deposition temperature by more than $200^{\circ}C$.