• 대한환경공학회지
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• 제28권5호
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• pp.501-510
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• 2006

교대로 간헐적으로 포기되는 2개의 부직포 여과막 생물반응조로 폐수를 처리할 때 반응조의 MLSS 농도와 유입수의 C/N 비가 질소 제거효율에 미치는 영향을 파악하기 위하여 MLSS 농도를 약 5,500 mg/L, 10,000 mg/L 및 15,000 mg/L로 유지하면서 $NH_4Cl$을 첨가하여 유입수의 TCOD/TKN 비를 5, 4, 3 및 2로 감소시켰다. 유입수는 음식물 쓰레기 침출수를 COD농도가 약 300 mg/L되도록 희석시킨 것이었다. 실험 결과, 반응조의 F/M 비는 0.112 g COD/g MLSS-day 이하, COD 제거효율은 95% 이상, 그리고 미생물 성장계수($Y_{obs}$) 값은 평균 0.283 g MLSS/g COD로 나타났다. 질산화 효율은 MLSS 농도가 5,500 mg/L이고 유입수의 TCOD/TKN 비가 2인 경우의 90.5%를 제외하고 모두 96% 이상이었다. 탈질효율은 유입수의 TCOD/TKN 비가 감소할수록 악화되었다. MLSS 농도가 5,500 mg/L인 경우에 비하여 10,000 mg/L인 경우에 탈질효율이 평균 10.7% 더 높아, MLSS 농도가 1,000 mg/L 증가함에 따라 평균 2.66 mg N/L의 율로 탈질율이 증가하였다. 그러나, MLSS 농도가 15,000 mg/L로 유지된 경우에는 5,500 mg/L인 경우에 비하여 탈질효율이 평균 4.6%만 더 높아 MLSS 농도가 1,000 mg/L 증가함에 따라 평균 0.75 mg N/L의 율로 탈질율이 증가하였다. 따라서 MLSS 농도와 내생 탈질율 간에 비례관계가 성립되지 않았다. 알칼리도 소모량은 유입수의 TCOD/TKN 비가 5인 경우에 제거된 T-N 1 mg당 평균 3.36 mg으로서 이론값인 3.57 mg에 가까웠으나 유입수의 TCOD/TKN 비가 감소함에 따라 증가하는 경향을 나타내었다.

• 식물조직배양학회지
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• 제21권4호
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• pp.193-200
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• 1994

마늘 생장점 배양을 통한 효율적인 우량종구 증식방법을 확립하기 위하여 기내배양시 유식물체 분화 및 기내인경 비대에 미치는 영향을 조사하였다. 유식물체 분화는 sucrose 및 질소 공급형태에 따라서 차이가 없었으나, 유식물체의 생장은 NO$_3$-N 공급시 저조하고, NH$_4$-N 및 NH$_4$+ NO$_3$ 공급형태에서 양호하였으며 특히 2차 계대배양시 질소형태를 바꾸워 공급할 경우 더욱 촉진되었다. 기내인경 비대는 NH$_4$-N를 공급하였을 때와 고농도의 Sucrose을 첨가하였을 때 촉진되었으며, 특히 유식물체에 저온처리를 하면 그 효과가 더 상승되었다. 기내배양에서 마늘의 생장에 이용되는 질소형태는 NH$_4$-N 이며, NO$_3$-N을 공급하면 흡수가 거의 되지 않고, $K^{+}$흡수도 저조하였다. Ethylene의 발생은 질소 공급 형태와 관계없이 8% sucrose 고농도에서 더 많이 발생되었다.

• 한국물환경학회지
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• 제30권5호
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• pp.503-511
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• 2014

The temporal and spatial analyses of total nitrogen (TN) fractionation were conducted in order to understand 1) total nitrogen components in streams and 2) their patterns in rainy and dry seasons. The result showed that the concentration of nitrogen components in stream water was lower in non-urban area and getting higher in urban area. Dissolved total nitrogen (DTN) was 95~97.7% of total nitrogen in streams, and the proportion of dissolved organic nitrogen (DON) and ammonia nitrogen ($NH_3-N$) was higher with increasing urban area. The concentration of total nitrogen and nitrate nitrogen ($NO_3-N$) were highest in winter among four seasons. The result was showed that concentration of $NH_3-N$ was same variation as concentrations of TN and $NO_3-N$ in urban-rural complex and urban areas, except rural areas. During rainy season, concentrations of particulate organic nitrogen (PON) and $NH_3-N$ increased in rural areas and decreased in both urban-rural complex and urban areas. Correlation between total nitrogen components and land uses was positively correlated with site > paddy, and negatively correlated with forest. The variation of total nitrogen concentration was determined by $NO_3-N$ in non-urban areas, by $NO_3-N$ and $NH_3-N$ in urban-rural complex and by $NH_3-N$ in the urban areas.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.244.1-244.1
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• 2013

The p-type GaN which act as a hole injection layer in GaN-based LEDs has fundamental problems. The first one arises from the difficulty in growing a highly doped p-GaN (with a carrier concentration exceeding ~1018 $cm^{-3}$). And the second one is the absence of appropriate metals or conducting oxides having a work function that is larger than that of p-type GaN (7.5 eV). Moreover, the LED efficiency is decreases gradually as the injection current increases (the so-called 'efficiency droop' phenomenon). The efficiency droop phenomenon in InGaN quantum wells (QWs) has been a large obstacle that has hindered high-efficiency operation at high current density. In this study, we introduce the new approaches to improve the light-output power of LEDs by using graphene oxide sheets. Graphene oxide has many functional groups such as the oxygen epoxide, the hydroxyl, and the carboxyl groups. Due to nature of such functional groups, graphene oxide possess a lot of hole carriers. If graphene oxide combine with LED top surface, graphene oxide may supply hole carriers to p-type GaN layer which has relatively low free carrier concentration less than electron concentration in n-type GaN layer. To prove the enhancement factor of graphene oxide coated LEDs, we have investigated electrical and optical properties by using ultra-violet photo-excited spectroscopy, confocal scanning electroluminescence microscopy.

• 센서학회지
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• 제23권2호
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• pp.94-98
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• 2014

Aluminum nitride (AlN) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 25~75% $N_2$ /Ar. The characterization of film properties were performed using surface profiler, X-ray diffraction, X-ray photoelectron spectroscopy(XPS), and pressure-voltage measurement system. The deposition rates of AlN films were decreased with increasing the $N_2$ concentration owing to lower mass of nitrogen ions than Ar. The as-deposited AlN films showed crystalline phase, and with increasing the $N_2$ concentration, the peak of AlN(100) plane and the crystallinity became weak. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. But in the case of 50% $N_2$ /Ar condition, the peak of (002) plane, which is determinant in pressure sensing properties, appeared. XPS depth profiling of AlN/TiN/SUS430 revealed Al/N ratio was close to stoichiometric value (45:47) when deposited under 50% $N_2/Ar$ atmosphere at room temperature. The output signal voltage of AlN sensor showed a linear behavior between 26~85 mV, and the pressure-sensing sensitivity was calculated as 7 mV/MPa.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.308-309
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• 2012

One of the critical issues in the growth of multijunction solar cell is the formation of a highly doped Esaki interband tunnel diode which interconnects unit cells of different energy band gap. Small electrical and optical losses are the requirements of such tunnel diodes [1]. To satisfy these requirements, tens of nanometer thick gallium arsenide (GaAs) can be a proper candidate due to its high carrier concentration in low energy band gap. To obtain highly doped GaAs in molecular beam epitaxy, the temperatures of Si Knudsen cell (K-cell) for n-type GaAs and Be K-cell for p-type GaAs were controlled during GaAs epitaxial growth, and the growth rate is set to 1.75 A/s. As a result, the doping concentration of p-type and n-type GaAs increased up to $4.7{\times}10^{19}cm^{-3}$ and $6.2{\times}10^{18}cm^{-3}$, respectively. However, the obtained n-type doping concentration is not sufficient to form a properly operating tunnel diode which requires a doping concentration close to $1.0{\times}10^{19}cm^{-3}$ [2]. To enhance the n-type doping concentration, n-doped GaAs samples were grown with a lower growth rate ranging from 0.318 to 1.123 A/s at a Si K-cell temperature of $1,180^{\circ}C$. As shown in Fig. 1, the n-type doping concentration was increased to $7.7{\times}10^{18}cm^{-3}$ when the growth rate was decreased to 0.318 A/s. The p-type doping concentration also increased to $4.1{\times}10^{19}cm^{-3}$ with the decrease of growth rate to 0.318 A/s. Additionally, bulk resistance was also decreased in both the grown samples. However, a transmission line measurement performed on the n-type GaAs sample grown at the rate of 0.318 A/s showed an increased specific contact resistance of $6.62{\times}10^{-4}{\Omega}{\cdot}cm^{-2}$. This high value of contact resistance is not suitable for forming contacts and interfaces. The increased resistance is attributed to the excessively incorporated dopant during low growth rate. Further studies need to be carried out to evaluate the effect of excess dopants on the operation of tunnel diode.

• Proceedings of the National Institute of Ecology of the Republic of Korea
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• 제2권4호
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• pp.259-273
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• 2021

We conducted a study to investigate the characteristics of the carbon cycle of two streams (located in Shig a Prefecture, Japan), having similar size, namely, the Adokawa stream (length: 52 km, area: 305 km², watershed population: 8,000) and the Yasukawa stream (length: 62 km, area: 380 km², watershed population: 120,000), but with different degree of human activity. Samples were collected from these two streams at 14 (Adokawa stream) and 23 (Yasukawa stream) stations in the flowing direction. The dissolved inorganic carbon (DIC) concentration and the stable carbon isotope ratio of DIC (δ¹³C-DIC) were measured in addition to the watershed features and the chemical variables of the stream water. The δ¹³C-DIC (-9.50 ± 2.54‰), DIC concentration (249 ± 76 µM), and electric conductivity (52 ± 13 µS/cm) in Adokawa stream showed small variations from upstream to downstream. However, the δ¹³C-DIC (-8.68 ± 2.3‰) upstream of Yasukawa stream was similar to that of Adokawa stream and decreased downstream (-12.13 ± 0.43‰). DIC concentration (upstream: 272 ± 89 µM, downstream: 690 ± 37 µM) and electric conductivity (upstream: 69 ± 17 µS/cm, downstream: 193 ± 37 µS/cm) were higher downstream than upstream of Yasukawa stream. The DIC concentration of Yasukawa stream was significantly correlated with watershed environmental variables, such as, watershed population density (r = 0.8581, p<0.0001, n = 23), and forest area percentage of the watershed (r = -0.9188, p<0.0001, n = 23). δ¹³C-DIC showed significant negative correlation with the DIC concentration (r = -0.7734, p<0.0001, n = 23), electric conductivity (r = -0.5396, p = 0.0079, n = 23), and watershed population density (r = -0.6836, p = 0.0003, n = 23). Our approach using a stable carbon isotope ratio suggests that DIC concentration and δ¹³C-DIC could be used as indicators for monitoring the health of stream ecosystems with different watershed characteristics.

• 센서학회지
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• 제17권4호
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• pp.256-260
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• 2008

This paper describes the mechanical properties of poly(polycrystalline) 3C-SiC thin films with various doping concentration, in which poly 3C-SiC thin fil's mechanical properties according to the n-doping concentration 1($9.2{\times}10^{15}cm^{-3}$), 3($5.2{\times}10^{17}cm^{-3}$), and 5%($6.8{\times}10^{17}cm^{-3}$) respectively were measured by nano indentation. In the case of $9.2{\times}10^{15}cm^{-3}n$-doping concentration, Young's modulus and hardness were obtained as 270 and 30 GPa, respectively. When the surface roughness according to n-doping concentrations was investigated by AFM(atomic force microscope), the roughness of poly 3C-SiC thin films doped by 5% concentration was 15 nm, which is also the best of them.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.437-438
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• 2008

박막태양전지에서 p-layer, i-layer, n-layer의 thickness와 doping concentration은 가장 기본이 되는 요소이다. 각 layer에서 위 두 가지 요소를 ASA simulator를 이용해서 높은 효율을 갖는 박막태양전지를 설계하기 위해 조절하였다. Simulation결과 p-layer의 thickness는 $9.5*10^{-9}m$, doping concentration은 0.2eV, i-layer의 thickness는 $4.535*10^{-7}m$, n-layer의 thickness는 $2*10^{-8}m$, doping concentration 은 0.1eV에서 최종 11.48%의 효율을 얻을 수 있었다. 본 연구를 통하여 높은 효율의 박막태양전지 설계 시에 도움이 될 수 있을 것이다.

• 한국전기전자재료학회논문지
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• 제17권6호
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• pp.586-591
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• 2004

We studied the dependence of hot-tarrier-induced degradation characteristics on nitrogen concentration in NO(Nitrided-Oxide) gate of nMOS, under ac and dc stresses. The $\Delta$V$_{t}$ and $\Delta$G$_{m}$ dependence of nitrogen concentration were observed, We observed that device degradation was suppressed significantly when the nitrogen concentration in the gate was increased. Compared to $N_2$O oxynitride, NO oxynitride gate devices show a smaller sensitivity to ac stress frequency. Results suggest that the improved at-hot carrier immunity of the device with NO gate may be due to the significantly suppressed interface state generation and neutral trap generation during stress.ess.