• Journal of the Optical Society of Korea
• /
• v.8 no.4
• /
• pp.163-167
• /
• 2004

We propose and demonstrate an external optical modulation method based on TE/TM-mode absorption nulls in a Multiple Quantum Well(MQW) Fabry-Perot laser diode(FP-LD). The center wavelength of the absorption nulls is rapidly shifted to short-wavelength by the small current change(~1mA) in the FP-LD, which can modulate an optical signal with more than 10 dB of extinction ratio(ER). The shift of the center wavelength comes from the refractive index change due to anomalous dispersion and the plasma effect in MQW FP-LD waveguide. Non-inverting and inverting signals are made by TE- and TM-mode absorption nulls at 155.52 Mbps and BERs for the signals are measured.

• Journal of the Korean Vacuum Society
• /
• v.19 no.3
• /
• pp.211-216
• /
• 2010

The luminescence properties of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ multiple quantum wells (MQWs) grown on $In_{0.5}Al_{0.5}As$ buffer layers have been studied by using photoluminescence (PL) and time-resolved PL measurements. A$1-{\mu}m$ thick $In_{0.5}Al_{0.5}As$ buffer layers were deposited on a 500 nm thick GaAs layer, followed by the deposition of the InGaAs/InAlAs MQWs. In order to investigate the effects of InAlAs buffer layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of InAlAs buffer layer. The growth temperature for InAlAs buffer layer was varied from 320^{\circ}C to $580^{\circ}C$. The MQWs consist of three $In_{0.5}Ga_{0.5}$As wells with different well thicknesses (2.5 nm, 4.0 nm, and 6.0 nm thick) and 10 nm thick $In_{0.5}Al_{0.5}$As barriers. The PL spectra from the MQWs with InAlAs layer grown at lower temperature range ($320-580^{\circ}C$) showed strong peaks from 4 nm QW and 6 nm QW. However, for the MQWs with InAlAs buffer grown at higher temperature range ($320-480^{\circ}C$), the PL spectra only showed a strong peak from 6 nm QW. The strongest PL intensity was obtained from the MQWs with InAlAs layer grown at the fixed temperature of $480^{\circ}C$, while the MQWs with buffer layer grown at higher temperature from $530^{\circ}C$ to $580^{\circ}C$ showed the weakest PL intensity. From the emission wavelength dependence of PL decay times, the fast and slow decay times may be related to the recombination of carriers in the 4 nm QW and 6 nm QW, respectively. These results indicated that the growth temperatures of InAlAs layer affect the structural and optical properties of the MQWs.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.9
• /
• pp.15-22
• /
• 2000

The effects of carrier transport and input power on the extinction ratio was theoretically analyzed in a 1.55${\mu}m$ InGaAsP/InGaAsP multiple-quantum-well(MQW) electroabsorption(EA) modulator. Poisson's equation, current continuity equations for electrons and holes, and optical field distribution were self-consistently solved by considering electric field dependent absorption coefficients. The field screening effect due to the carrier accumulation in heterointerface and the space-charge region occurred more seriously at the input side of modulator as input optical intensity increased. It was revealed that extinction ratio could be steeply degraded for modulator with the length of 200${\mu}m$ when an input power exceeds 10mW. A degradation of extinction ratio due to the field screening effect would be more significantly at high-performance devices such as a 1.55${\mu}m$DFB-LD/EA-modulator integrated source where optical coupling efficiency is almost complete or a very high-speed modulator with its length as short as a few tens ${\mu}m$.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.37 no.12
• /
• pp.11-17
• /
• 2000

We investigated the growth of InGaN/GaN multiple quantum wells (MQWs) structures which emit blue light. The samples were grown in a low pressure metalorganic chemical vapor deposition system. We examined InGaN/GaN MQWs by varying growth temperatures and thicknesses of InGaN well and GaN barrier layers in MQWs. Especially, the thickness of GaN barrier in InGaN/GaN MQWs was found to severely affect the interfacial abruptness between InGaN well and GaN barrier layers. The higher order satellite peaks in the high resolution x-ray diffraction spectra and the high resolution cross sectional transmission electron microscope image of MQW structrues revealed that the interface between InGaN and GaN layers was very abrupt. Room-temperature photoluminescence spectra also showed a blue emission from InGaN/GaN MQWs at the wavelength of 463.5nm with a narrow full width at half maximum of 72.6meV.

• Journal of the Optical Society of Korea
• /
• v.20 no.1
• /
• pp.130-134
• /
• 2016

The influence of Au/Ni-based contact formed on a lightly-doped (7.3×1017cm−3, Zn-doped) InGaAsP layer for electrical compensation of surface plasmon polariton (SPP) propagation under various rapid thermal annealing (RTA) conditions has been studied. The active control of SPP propagation is realized by electrically pumping the InGaAsP multiple quantum wells (MQWs) beneath the metal planar waveguide. The metal planar film acts as the electric contact layer and SPP waveguide, simultaneously. The RTA process can lower the metal-semiconductor electric contact resistance. Nevertheless, it inevitably increases the contact interface morphological roughness, which is detrimental to SPP propagation. Based on this dilemma, in this work we focus on studying the influence of RTA conditions on electrical control of SPPs. The experimental results indicate that there is obvious degradation of electrical pumping compensation for SPP propagation loss in the devices annealed at 400℃ compared to those with no annealing treatment. With increasing annealing duration time, more significant degradation of the active performance is observed even under sufficient current injection. When the annealing temperature is set at 400℃ and the duration time approaches 60s, the SPP propagation is nearly no longer supported as the waveguide surface morphology is severely changed. It seems that eutectic mixture stemming from the RTA process significantly increases the metal film roughness and interferes with the SPP signal propagation.

• Korean Journal of Optics and Photonics
• /
• v.23 no.1
• /
• pp.42-51
• /
• 2012

In this paper, injection-locking characteristics versus active layer structures in Fabry-Perot laser diodes (FP-LD) are compared. TE and TM gain spectra and peak gains versus carrier density in polarized and unpolarized multiple quantum well structures and in an unpolarized bulk structure are calculated. The calculated gain parameters are applied to a time-domain large-signal model to simulate the injection-locking characteristics. The results show that RIN in unpolarized FD-LDs is about 3 dB lower than that in a polarized FP-LD and that the eye characteristics of the unpolarized FP-LD are much better than those of the polarized FP-LD.

• Journal of Surface Science and Engineering
• /
• v.43 no.6
• /
• pp.304-308
• /
• 2010

Deposition temperature uniformity of GaN based MQW (multiple quantum well) layers is an important key which affects the wavelength uniformity of white LEDs. Temperature uniformity was assessed by infrared images for both cases of a static and a rotating susceptor. Rotating the susceptor at 2.5 rpm over the induction heater gave 4.3% of temperature non-uniformity. Temperature distribution of the graphite susceptor over the induction heater was numerically modelled and agreed with experimental results.

• Korean Journal of Optics and Photonics
• /
• v.27 no.5
• /
• pp.181-187
• /
• 2016

We report on the parameter-dependent optical characteristics of the unidirectional single-mode lasing square ring cavities. Using the taper-step section in the square cavities, the resonant direction can be selected and we characterize the optical losses by changing the taper lengths. Various kinds of square ring cavities are fabricated, based on InGaAsP/InGaAs multiple quantum well semiconductor materials. From the experimental results we obtain the optimized taper length for a given device structure, while maintaining unidirectional single-mode lasing.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2000.02a
• /
• pp.116-116
• /
• 2000

질화물 반도체는 LED, LD, Transistor, 그리고 Photodetector 등 광소자 및 전자소자를 실현할 수 있는 소재로써 최근에 각광 받고 있으며, 또한 국·내외적으로 연구가 활발히 진행되고 잇다. 질화물 발광 다이오드 제작에는 소자의 효율과 수명시간의 향상을 위하여 질화물 반도체와 금속과의 접합시 고 품질의 오믹 접합이 필수적이다. 특히 p-형 GaN의 경우에는 높은 정공 농도를 갖는 p-형 GaN를 얻기가 어렵고 GaN의 일함수에 비하여 높은 일함수를 갖는 금속이 없기 때문에 매우 낮은 접합 저항을 가지며 안정성이 매우 우수한 금 접합을 얻기가 어렵다고 알려져 있다. 또한, GaN 계열의 발광 다이오드는 일반적으로 표면 발광 다이오드 형태로 제작되기 때문에 p-형 GaN 층의 오믹 접촉으로 사용되는 금속의 전기적 특성뿐만 아니라 발광 다이오드의 활성층에서 발광되어 나오는 빛에 대한 투과도 또한 우수하여야 발광 다이오드의 효율이 우수해진다. 본 연구에서는 p-형 GaN층의 접합 금속으로 Pt(80nm)과 Ni(5nm)/Au(7nm)를 사용하여 InGaN/GaN 다중양자우물 구조의 발광 다이오드를 제작하여 전기적 특성 및 발광효율을 측정하였다. 그리고, Pt(80nm)과 p-형 GaN와의 접합시 온도 변화에 따른 전기적 특성을 TLM 방법으로 조사하고, 가시광선 영역에서의 빛에 대한 투과도를 UV/VIS spectrometer, X-ray reflectivity, 그리고 Atomic Force Microscopy 등을 이용하여 분석하였다.

• Korean Journal of Optics and Photonics
• /
• v.32 no.2
• /
• pp.55-61
• /
• 2021

The lateral-mode characteristics of 850-nm GaAs/(Al,Ga)As multiple-quantum-well laser diodes and their influence on the kinks in output optical power are investigated. For the investigation, self-consistent electro-thermal-optical simulation and measurement of fabricated devices are used. From this investigation, the optimal P-cladding thickness that provides single-lateral-mode operation is determined, so that high beam quality can be achieved even at high output powers.