• 한국광학회지
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• 제26권2호
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• pp.115-120
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• 2015

광축의 각도가 서로 다른 두 단축이방성 박막이 다층박막 기층시료 위에 코팅되어 있을 때 비스듬히 입사한 빛의 유효반사계수 표현들을 유도하였다. 유효반사계수로부터 타원상수 표현들을 구하고 이 타원상수의 단축이방성 박막 광축각도 의존성으로부터 단축이방성 박막의 표면 이방성에 의한 효과와 주층 이방성에 의한 효과를 구분하여 해석할 수 있도록 하였다.

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.248-252
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• 2005

The effects of electric field strength and mechanical compressive stress on the displacement of multilayered ceramic actuator, stacked alternatively 0.2 (PbM $n_{1}$3/N $b_{2}$3/ $O_3$)-0.8(PbZ $r_{0.475}$ $Ti_{0.525}$ $O_3$) ceramic thin films and 70Ag-30Pd electrodes were investigated. Because the actuators were designed to stack ceramic layer and electrode layer alternatively, the ceramic-electrode interfaces may act as a resistance to motion of domain wall. so the polarization and strain were affected by the amount of 180$^{\circ}$domain, electric field strength and mechanical compressive stress. Consequently, the change of polarization, displacement with respect to field strength, and mechanical compressive stress were likely to be caused by readiness of the domain wall movement around the ceramic-electrode interfaces.ces.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.285-285
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• 2006

The ionic layer-by-layer (LBL) assembled films can be formed by sequentially dipping of substrates to oppositely charged polyions solution in the multilayer, called polyelectrolytes multilayer (PEM) films. Easy way of these assemblies of charged polymers offer the ability to adjust important parameters such as controllability of thickness in the nanometer-scale level and functionality of most top layer of PEM films. Nevertheless, we do not know of any trials to fabricate PEM organic films into nanometer size. Herein, we show the integration of the LBL technique with DPN in fabricating nanometer size patterns of multilayered polyelectrolyte structures. Through the use of single and multiple cantilever AFM probes, we demonstrate the parallel writing capabilities of DPN.

• The Korean Journal of Ceramics
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• 제5권1호
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• pp.50-54
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• 1999

$(Pb_xLa_{1-x}) (Zr_yTi_{1-y})O_3$ (PLZT) thin films with electrooptic effect are promising for the optical application such as display or light shutter. However, it is difficult to use inexpensive and transparent glass substrates because the conventional process for preparation of PLZT requires temperatures above $600^{\circ}C$. In order to deposit a perovskite PLZT thin films at low processing temperatures through alkoxide route, we have offered several seeding processes which reduce the activation energy for crystallization. In this study, we optimized the stacking structure of multilayered PLZT for obtaining single phase perovskite at lower temperatures. As a result, ferroelectric PLZT thin films with different compositions were successfully prepared at a temperature as low at $500^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• 제10권5호
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• pp.165-168
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• 2009

Transparent and conducting ITO/Cu/ITO multilayered films were deposited by magnetron sputtering on unheated polycarbonate (PC) substrates. The thickness of the Cu intermediate film was varied from 5 to 20 nm. Changes in the microstructure and optoelectrical properties of ITO/Cu/ITO films were investigated with respect to the thickness of the Cu intermediated layer. The optoelectrical properties of the films were significantly influenced by the thickness of the Cu interlayer. The sandwich structure of ITO 50 nm/Cu 5 nm/ITO 45 nm films had a sheet resistance of $36{\Omega}$/Sq. and an optical transmittance of 67% (contain substrate) at a wavelength of 550 nm, while the ITO 50 nm/Cu 20 nm/ITO 30 nm films had a sheet resistance of $70{\Omega}$/Sq. and an optical transmittance of 36%. The electrical and optical properties of ITO/Cu/ITO films were determined mainly by the Cu film properties. From the figure of merit, it is concluded that the ITO/Cu/ITO films with a 5 nm Cu interlayer showed the better performance in transparent conducting electrode applications than the conventional ITO films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.276-276
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• 2008

Transparent and conducting indium tin oxide (ITO) and ITO/Nickel/ITO(INI) multilayered films were prepared on glass substrates by a magnetron sputtering without intentional substrate heating. The RF(13.56MHz) and DC power were applied to ITO and Nickel target, respectively. The thickness of ITO, Ni and ITO films were kept constantly at 50, 5 and 45 nm. In order to consider the effect of post deposition vacuum annealing in vacuum on the physical and optoeletrical properties of INI films, optical transmittance, electrical resistivity, crystallinity of the films were analyzed. From the observed result, it may conclude that the optoelectrical properties of the INI films were dependent on the post deposition annealing. For the INI films annealed at $300^{\circ}C$, the films have a polycrystalline structure with (110), (200), (210), (211) and (300). The resistivity of the films were $4.0\times10^{-4}{\Omega}cm$ at room temperature. As the annealing($300^{\circ}C$), resistivity decreased to $2.8\times10^{-4}{\Omega}cm$. And also the optical transmittance decreased from 79 to 70 % at 550nm.

• 한국자기학회지
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• 제6권3호
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• pp.170-173
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• 1996

3-gun 마그네트론 스퍼터 장치로 Co-Zr 다층 박막을 제작하여 저온 비정질화를 시도하였다. 박막 x-ray와 단면 투과 전자현미경 분석에 의해 지르코늄 층이 코발트의 확산에 의해 비정질화 됨과 그의 위쪽 계면의 지르코늄 비정질화 속도가 아래쪽 계면의 그것보다 두 내지 세배 빠른 것을 발견하였다. 이 현상은 스퍼터링 중의 분자 섞임으로 설명되었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1324_1325
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• 2009

The heterolayered $BaTiO_3/(Bi_{0.5}Na_{0.5})TiO_3$ thick films were fabricated by screen printing techniques on alumina substrates electrodes with Pt. We report the improved ferroelectric properties in the heterolayered teteragonal/rhombohedral structure composed of the $BaTiO_3$ and the $(Bi_{0.5}Na_{0.5})TiO_3$ thick films. We investigated the effects of deposition conditions on the structural and electrical properties of the heterolayered BNT/BT thick films. The structural and electrical properties of the heterolayered BNT/BT thick films were studied. All PZT heterolayered thin films show dense and homogeneous structure without the presence of the rosette structure. The dielectric constant, loss and remanent polarization oft heheterolayered BNT/BT thick films were superior to those of single composition $BaTiO_3$ and $(Bi_{1/2}Na_{1/2})TiO_3$, and those values for the heterolayered BNT/BT thick films sintered at $1100^{\circ}C$ were 916, 0.79 and $12.63{\mu}C/cm^2$.

• Korean Chemical Engineering Research
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• 제59권4호
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• pp.639-643
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• 2021

본 연구에서는 3차원 다층 미세유체 디바이스를 제작하기 위한 접착제로서 불소화 에틸렌 프로필렌(fluorinated ethylene propylene, FEP) 나노입자를 연구하였다. FEP 분산 용액을 1500 rpm에서 30초 동안 단순 스핀 코팅하여 기판에 3 ㎛ 두께의 균일하게 분포된 FEP 나노 입자 층을 형성하였다. FEP 나노입자는 300 ℃에서 1시간 동안 열처리 후 소수성 박막으로 변형되었으며, FEP 나노입자를 이용하여 제작된 폴리이미드 필름 기반 미세유체 디바이스는 최대 2250 psi의 압력을 견디는 것을 확인하였다. 마지막으로 기존의 포토리소그래피로 제작하기 어려운 16개의 마이크로 반응기로 구성된 3차원 다층 미세유체 디바이스를 FEP가 코팅된 9개의 폴리이미드 필름을 간단한 1단계 정렬로 성공적으로 구현하였다. 개발된 3차원 다층 미세유체 디바이스는 화학 및 생물학의 다양한 응용을 위한 고속대량 스크리닝, 대량 생산, 병렬화 및 대규모 미세유체 통합과 같은 강력한 도구가 될 가능성이 있습니다.

• Transactions on Electrical and Electronic Materials
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• 제16권6호
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• pp.303-307
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• 2015

Multilayered films of ITO (In₂O₃:SnO₂ = 9:1)/SiO₂ were deposited on soda-lime glass by RF/DC magnetron sputtering at 500℃ to improve the energy conversion efficiency of dye-sensitized solar cells (DSSCs). The light absorption of the dye was improved by decrease in light reflectance from the surface of the DSSCs by using an ITO film. In order to estimate the optical characteristics and compare them with experimental results, a simulation program named EMP (essential macleod program) was used. EMP results revealed that the multilayered thin films showed high transmittance (approximate average transmittance of 79%) by adjusting the SiO₂ layer thickness. XRD results revealed that the ITO and TiO₂ films exhibited a crystalline phase with (400) and (101) preferred orientations at 2 θ = 26.24° and 35.18°, respectively. The photocurrent-voltage (I-V) characteristics of the DSSCs were measured under AM 1.5 and 100 mW/cm² (1 sun) by using a solar simulator. The DSSC fabricated on the ITO film with a 0.1-nm-thick SiO₂ film showed a Voc of 0.697 V, J_sc of 10.596 mA/cm² , FF of 66.423, and calculated power conversion efficiency (η_AM1.5) of 5.259%, which was the maximum value observed in this study.