• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.195-195
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• 2003

• Proceedings of the Korean Vacuum Society Conference
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• 2003.08a
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• pp.79-79
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• 2003

• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.166-166
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• 2002

• Proceedings of the Korean Vacuum Society Conference
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• 2002.06a
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• pp.179-179
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• 2002

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.90.1-90
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• 1998

• The Korean Journal of Ceramics
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• v.7 no.1
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• pp.36-40
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• 2001

In order to fabricate uncooled IR sensors for pyroelectric applications, multilayered thin films of Pt/PbTiO$_3$/Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si and thermally isolating membrane structures of square-shaped/cantilevers-shaped microstructures were prepared. Cavity was also fabricated via direct silicon wafer bonding and etching technique. Metallic Pt layer was deposited by ion beam sputtering while PbTiO$_3$ thin films were prepared by sol-gel technique. Micromachining technology was used to fabricate microstructured-membrane detectors. In order to avoid a difficulty of etching active layers, silicon-nitride membrane structure was fabricated through the direct bonding and etching of the silicon wafer. Although multilayered thin film deposition and device fabrications were processed independently, these could b integrated to make IR micro-sensor devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.681-684
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• 2010

The $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ multilayered structure for the transparent electrodes in plasma display panel was designed by essential macleod program (EMP) and the multilayered film was deposited on a glass substrate by direct-current (DC)/radio-frequency (RF) magnetron sputtering system. During film deposition process, the Ag layer in $TiO_2$/Ag/$TiO_2$ structure became oxidized and the filter characteristic was degraded easily. In this study, ZnS layer was adopted as a diffusion blocking layer between $TiO_2$ and Ag to prevent the oxidation of Ag layer efficiently in $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ structure. Based on the AES depth profiling analysis, the Ag layer was effectively protected by the ZnS layer as compared with the $TiO_2$/Ag/$TiO_2$ multilayered films without ZnS as an antioxidant layer. The 3 times stacked $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ films have low sheet resistance of $1.22{\Omega}/{\square}$ and luminous transmittance was as high as 62% in the visible ranges.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.208-211
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• 2012

In the present study, a ZnO thin film, as a buffer layer of ITO (indium tin oxide) film was deposited on glass substrates by RF magnetron sputtering at low temperature of $150^{\circ}C$. In order to estimate the optical characteristics and compare with the experimental results in Glass/ZnO(100 nm)/ITO(35 nm) multilayered film, the simulation program, EMP (Essential Macleod Program) was adopted. The sheet resistance and optical transmittance of the films were measured using the four-point probe method and spectrophotometer, respectively. From X-ray diffraction patterns, all the films deposited at $150^{\circ}C$ demonstrated only the amorphous phase. Optical transmittance was the highest at a ZnO thickness of 100 nm. The ITO(35 nm)/ZnO(100 nm) film exhibits an optical transmittance of >92% at 550 nm. The multilayered film showed an electrical sheet resistance of 407 ${\Omega}/sq.$, which is significantly better than that of a single-layer ITO film without a ZnO buffer layer (815 ${\Omega}/sq.$).

• Journal of the Korean Magnetics Society
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• v.4 no.3
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• pp.256-262
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• 1994

$200{\AA}$ thick Co/Pd multilayered thin films were fabricated by sputtering. Two thicknesses of cobalt sublayer, $2{\AA}$ and $4{\AA}$ were chosen and the effects of sputtering pressure on the perpendicular magnetic anisotropy were investigated. It has been found that the optimum pressure for maximum perpendicular magnetic anisotropy(PMA) existed and the pressure for maximum PMA was lower for the multilayer with $2{\AA}$ cobalt layer than that with $4{\AA}$ cobalt thickness. As the sputtering gas presssure increased, domain wall motion with magnetization became difficult and the predominant mode of magnetization reversal changed from domain wall motion to magnetic moment rotation. It turned out that the perpendicular magnetic anisotropy was higher in case of $2{\AA}$ cobalt thickness than $4{\AA}$ cobait thickness.

• Journal of the Korean Magnetics Society
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• v.3 no.4
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• pp.269-276
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• 1993

Co/Pd multilayered thin films with various ratios of Co sublayers to Pd sublayers(nCo/nPd = 1/4, 2/4, 3/4, 5/4) were fabricated at different substrate temperatures($R.\;T.,\;100,\;150,\;200\;^{\circ}C$) with the conventional vacuum evaporation method, and their Hall voltage hysteresis curves were measured. These Hall curves were decomposed on the basis of the superpose of the transverse Hall effect term from the magnetizations of Co and Pd sublayers and the magnetoresistivity term, by the optimal fitting method. In the results, both of the ferromagnetic and anti ferromagnetic states coexisted through whole samples, and the uniaxial or unidirectional easy axis type Hall hysteresis curves occured were dependent upon the effects of the exchange anisotropy between both magnetic states and the domain wall pinning by the antiferromagnet inclusions.