• 제목/요약/키워드: Multilayered

검색결과 562건 처리시간 0.022초

핵연료 피복관용 다중층 SiC 복합체 튜브의 Hoop Stress 전산모사 연구 (FEA Study on Hoop Stress of Multilayered SiC Composite Tube for Nuclear Fuel Cladding)

  • 이현근;김대종;박지연;김원주
    • 한국세라믹학회지
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    • 제51권5호
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    • pp.435-441
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    • 2014
  • Silicon carbide-based ceramics and their composites have been studied for application to fusion and advanced fission energy systems. For fission reactors, $SiC_f$/SiC composites can be applied to core structural materials. Multilayered SiC composite fuel cladding, owing to its superior high temperature strength and low hydrogen generation under severe accident conditions, is a candidate for the replacement of zirconium alloy cladding. The SiC composite cladding has to retain its mechanical properties and original structure under the inner pressure caused by fission products; as such it can be applied as a cladding in fission reactor. A hoop strength test using an expandable polyurethane plug was designed in order to evaluate the mechanical properties of the fuel cladding. In this paper, a hoop strength test of the multilayered SiC composite tube for nuclear fuel cladding was simulated using FEA. The stress caused by the plug was distributed nonuniformly because of the friction coefficient difference between the inner surface of the tube and the plug. Hoop stress and shear stress at the tube was evaluated and the relationship between the concentrated stress at the inner layer of the tube and the fracture behavior of the tube was investigated.

A novel higher-order shear deformation theory for bending and free vibration analysis of isotropic and multilayered plates and shells

  • Zine, Abdallah;Tounsi, Abdelouahed;Draiche, Kada;Sekkal, Mohamed;Mahmoud, S.R.
    • Steel and Composite Structures
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    • 제26권2호
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    • pp.125-137
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    • 2018
  • In this work, the bending and free vibration analysis of multilayered plates and shells is presented by utilizing a new higher order shear deformation theory (HSDT). The proposed involves only four unknowns, which is even less than the first shear deformation theory (FSDT) and without requiring the shear correction coefficient. Unlike the conventional HSDTs, the present one presents a novel displacement field which incorporates undetermined integral variables. The equations of motion are derived by using the Hamilton's principle. These equations are then solved via Navier-type, closed form solutions. Bending and vibration results are found for cylindrical and spherical shells and plates for simply supported boundary conditions. Bending and vibration problems are treated as individual cases. Panels are subjected to sinusoidal, distributed and point loads. Results are presented for thick to thin as well as shallow and deep shells. The computed results are compared with the exact 3D elasticity theory and with several other conventional HSDTs. The proposed HSDT is found to be precise compared to other several existing ones for investigating the static and dynamic response of isotropic and multilayered composite shell and plate structures.

Micromachinng and Fabrication of Thin Filmes for MEMS-infrarad Detectors

  • Hoang, Geun-Chang;Yom, Snag-Seop;Park, Heung-Woo;Park, Yun-Kwon;Ju, Byeong-Kwon;Oh, Young-Jei;Lee, Jong-Hoon;Moonkyo Chung;Suh, Sang-Hee
    • The Korean Journal of Ceramics
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    • 제7권1호
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    • pp.36-40
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    • 2001
  • In order to fabricate uncooled IR sensors for pyroelectric applications, multilayered thin films of Pt/PbTiO$_3$/Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si and thermally isolating membrane structures of square-shaped/cantilevers-shaped microstructures were prepared. Cavity was also fabricated via direct silicon wafer bonding and etching technique. Metallic Pt layer was deposited by ion beam sputtering while PbTiO$_3$ thin films were prepared by sol-gel technique. Micromachining technology was used to fabricate microstructured-membrane detectors. In order to avoid a difficulty of etching active layers, silicon-nitride membrane structure was fabricated through the direct bonding and etching of the silicon wafer. Although multilayered thin film deposition and device fabrications were processed independently, these could b integrated to make IR micro-sensor devices.

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TiO2/ZnS/Ag/ZnS/TiO2 다층막의 PDP 필터용 전극 특성 (Transparent Electrode Performance of TiO2/ZnS/Ag/ZnS/TiO2 Multi-Layer for PDP Filter)

  • 오원석;이서희;장건익;박성완
    • 한국전기전자재료학회논문지
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    • 제23권9호
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    • pp.681-684
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    • 2010
  • The $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ multilayered structure for the transparent electrodes in plasma display panel was designed by essential macleod program (EMP) and the multilayered film was deposited on a glass substrate by direct-current (DC)/radio-frequency (RF) magnetron sputtering system. During film deposition process, the Ag layer in $TiO_2$/Ag/$TiO_2$ structure became oxidized and the filter characteristic was degraded easily. In this study, ZnS layer was adopted as a diffusion blocking layer between $TiO_2$ and Ag to prevent the oxidation of Ag layer efficiently in $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ structure. Based on the AES depth profiling analysis, the Ag layer was effectively protected by the ZnS layer as compared with the $TiO_2$/Ag/$TiO_2$ multilayered films without ZnS as an antioxidant layer. The 3 times stacked $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ films have low sheet resistance of $1.22{\Omega}/{\square}$ and luminous transmittance was as high as 62% in the visible ranges.

다층회귀예측신경망의 음성인식성능에 관한 연구 (A Study on the Speech Recognition Performance of the Multilayered Recurrent Prediction Neural Network)

  • 안점영
    • 한국정보통신학회논문지
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    • 제3권2호
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    • pp.313-319
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    • 1999
  • 4층구조의 다층퍼셉트론을 변형하여 3 종류의 다층회귀예측신경망을 구성하고, 예측차수, 두 은닉층의 뉴런개수, 연결세기의 초기치 및 전달함수 변화에 따른 각 망의 음성인식성능을 실험을 통해 각각 비교 분석한다. 실험결과에 의하면, 다층회귀신경망이 다층퍼셉트론에 비해 음성인식성능이 우수하다. 그리고 구조적으로는 상위은닉층의 출력을 하위은닉층으로 회귀할 때 인식성능이 가장 우수하며, 각 망 공히 상, 하위은닉층의 뉴런 10 혹은 15개, 예측차수 3 혹은 4차일 때 인식률이 양호하다. 학습시 연결세기의 초기치를 -0.5에서 0.5사이로 설정하고, 하위은닉층에서 단극성 시그모이드 전달함수를 사용할 때 인식성능이 더욱 향상된다.

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Numerical Analysis of the Wavelength Dependence in Low Level Laser Therapy (LLLT) Using a Finite Element Method

  • Yoon, Jin-Hee;Park, Ji-Won;Youn, Jong-In
    • The Journal of Korean Physical Therapy
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    • 제22권6호
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    • pp.77-83
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    • 2010
  • Purpose: The aim of this study was to do numerical analysis of the wavelength dependence in low level laser therapy (LLLT) using a finite element method (FEM). Methods: Numerical analysis of heat transfer based on a Pennes' bioheat equation was performed to assess the wavelength dependence of effects of LLLT in a single layer and in multilayered tissue that consists of skin, fat and muscle. The three different wavelengths selected, 660 nm, 830 nm and 980 nm, were ones that are frequently used in clinic settings for the therapy of musculoskeletal disorders. Laser parameters were set to the power density of 35.7 W/$cm^2$, a spot diameter of 0.06 cm, and a laser exposure time of 50 seconds for all wavelengths. Results: Temperature changes in tissue based on a heat transfer equation using a finite element method were simulated and were dominantly dependent upon the absorption coefficient of each tissue layer. In the analysis of a single tissue layer, heat generation by fixed laser exposure at each wavelength had a similar pattern for increasing temperature in both skin and fat (980 nm > 660 nm > 830 nm), but in the muscle layer 660nm generated the most heat (660 nm ${\gg}$ 980 nm > 830 nm). The heat generation in multilayered tissue versus penetration depth was shown that the temperature of 660 nm wavelength was higher than those of 830 nm and 980 nm Conclusion: Numerical analysis of heat transfer versus penetration depth using a finite element method showed that the greatest amount of heat generation is seen in multilayered tissue at = 660 nm. Numerical analysis of heat transfer may help lend insight into thermal events occurring inside tissue layers during low level laser therapy.

Ti0.5Al0.5N/CrN 나노 다층 박막의 기계적 성질과 열적 안정성 (Mechanical Properties and Thermal Stability of Ti0.5Al0.5N/CrN Nano-multilayered Coatings)

  • 안승수;박종극;오경식;정태주
    • 한국분말재료학회지
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    • 제27권5호
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    • pp.406-413
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    • 2020
  • Ti0.5Al0.5N/CrN nano-multilayers, which are known to exhibit excellent wear resistances, were prepared using the unbalanced magnetron sputter for various periods of 2-7 nm. Ti0.5Al0.5N and CrN comprised a cubic structure in a single layer with different lattice parameters; however, Ti0.5Al0.5N/CrN exhibited a cubic structure with the same lattice parameters that formed the superlattice in the nano-multilayers. The Ti0.5Al0.5/CrN multilayer with a period of 5.0 nm exceeded the hardness of the Ti0.5Al0.5N/CrN single layer, attaining a value of 36 GPa. According to the low-angle X-ray diffraction, the Ti0.5Al0.5N/CrN multilayer maintained its as-coated structure up to 700℃ and exhibited a hardness of 32 GPa. The thickness of the oxidation layer of the Ti0.5Al0.5N/CrN multilayered coating was less than 25% of that of the single layers. Thus, the Ti0.5Al0.5N/CrN multilayered coating was superior in terms of hardness and oxidation resistance as compared to its constituent single layers.

Progress of High-k Dielectrics Applicable to SONOS-Type Nonvolatile Semiconductor Memories

  • Tang, Zhenjie;Liu, Zhiguo;Zhu, Xinhua
    • Transactions on Electrical and Electronic Materials
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    • 제11권4호
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    • pp.155-165
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    • 2010
  • As a promising candidate to replace the conventional floating gate flash memories, polysilicon-oxide-nitride-oxidesilicon (SONOS)-type nonvolatile semiconductor memories have been investigated widely in the past several years. SONOS-type memories have some advantages over the conventional floating gate flash memories, such as lower operating voltage, excellent endurance and compatibility with standard complementary metal-oxide-semiconductor (CMOS) technology. However, their operating speed and date retention characteristics are still the bottlenecks to limit the applications of SONOS-type memories. Recently, various approaches have been used to make a trade-off between the operating speed and the date retention characteristics. Application of high-k dielectrics to SONOS-type memories is a predominant route. This article provides the state-of-the-art research progress of high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories. It begins with a short description of working mechanism of SONOS-type memories, and then deals with the materials' requirements of high-k dielectrics used for SONOS-type memories. In the following section, the microstructures of high-k dielectrics used as tunneling layers, charge trapping layers and blocking layers in SONOS-type memories, and their impacts on the memory behaviors are critically reviewed. The improvement of the memory characteristics by using multilayered structures, including multilayered tunneling layer or multilayered charge trapping layer are also discussed. Finally, this review is concluded with our perspectives towards the future researches on the high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories.