• Journal of the Korean Vacuum Society
• /
• v.20 no.6
• /
• pp.442-448
• /
• 2011

Self-assembled InAs/InAlGaAs quantum dots (QDs) grown on an InP (001) substrate have been investigated by using photoluminescence (PL) and time-resolved PL measurements. The single layer (QD1) and seven stacks (QD2) of InAs/InAlGaAs QDs grown by the conventional S-K growth mode were used. The PL peak at 10 K was 1,320 nm for both QD1 and QD2. As the temperature increases from 10 to 300 K, the PL peaks for QD1 and QD2 were red-shifted in the amount of 178 and 264 nm, respectively. For QD1, the PL decay increased with increasing emission wavelength from 1,216 to 1,320 nm, reaching a maximum decay time of 1.49 ns at 1,320 nm, and then decreased as the emission wavelength was increased further. However, the PL decay time for QD2 decreased continuously from 1.83 to 1.22 ns as the emission wavelength was increased from 1,130 to 1,600 nm, respectively. These PL and TRPL results for QD2 can be explained by the large variation in the QD size with stacking number caused by the phase separation of InAlGaAs.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.20 no.4
• /
• pp.503-509
• /
• 2019

The demand for smaller, faster, and multi-functional mobile devices in increasing at a rapidly increasing rate. In response to these trends, Stacked Chip Scale Package (SCSP) is used widely in the assembly industry. A film type adhesive called die attach film (DAF) is used widely for bonding chips in SCSP. The DAF requires high flowability at high die attachment temperatures for bonding chips on organic substrates, where the DAF needs to feel the gap depth, or for bonding the same sized dies, where the DAF needs to penetrate bonding wires. In this study, the mixture design of experiment (DOE) was performed for three raw materials to obtain the optimized DAF recipe for low elastic modulus at high temperature. Three components are acrylic polymer (SG-P3) and two solid epoxy resins (YD011 and YDCN500-1P) with different softening points. According to the DOE results, the elastic modulus at high temperature was influenced greatly by SG-P3. The elastic modulus at $100^{\circ}C$ decreased from 1.0 MPa to 0.2 MPa as the amount of SG-P3 was decreased by 20%. In contrast, the elastic modulus at room temperature was dominated by YD011, an epoxy with a higher softening point. The optimized DAF recipe showed approximately 98.4% pickup performance when a UV dicing tape was used. A DAF crack that occurred in curing was effectively suppressed through optimization of the cure accelerator amount and two-step cure schedule. The imizadole type accelerator showed better performance than the amine type accelerator.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
• /
• v.14 no.2
• /
• pp.90-101
• /
• 2009

Analysis of multi-channel seismic reflection data from the Southern Ulleung Basin reveals that Plio-Quaternary section in the area consists of nine stacked sedimentary units separated by erosional unconformities. On the southern slope, these sedimentary units are acoustically characterized by chaotic seismic facies without distinct internal reflections, interpreted as debris-flow bodies. Toward the basin floor, the sedimentary units are defined by well-stratified facies with good continuity and strong amplitude, interpreted as turbidite/hemipelagic sediments. The seismic facies distribution suggests that deposition of Plio-Quaternary section in the area was controlled mainly by tectonic movement and sea-level fluctuations. During the Pliocene, sedimentation was mainly controlled by tectonic movements related to the back-arc closure of the East Sea. The back-arc closure that began in the Miocene caused compressional deformation along the southern margin of the Ulleung Basin, resulting in regional uplift which continued until the Pliocene. Large amounts of sediments, eroded from the uplifted crustal blocks, were supplied to the basin, depositing Unit 1 which consists of debris-flow deposits. During the Quaternary, sea-level fluctuations resulted in stacked sedimentary units (2-9) consisting of debris-flow deposits, formed during sea-level fall and lowstands, and thin hemipelagic/turbidite sediments, deposited during sea-level rise and highstands.

• Journal of the Korean Society for Aeronautical & Space Sciences
• /
• v.41 no.11
• /
• pp.891-899
• /
• 2013

This paper suggests a test and evaluation procedure of conformal load-bearing antenna structure(CLAS) for high speed military jet application. A log periodic patch type antenna was designed for multi-band communication and navigation antenna. Carbon/Glass fiber reinforced polymer was used as a structure supporting aerodynamic loads and honeycomb layer was used to improve antenna performance. Multi-layers were stacked and cured in a hot temperature oven. Gain, VSWR and polarization pattern of CLAS were measured using anechoic chamber within 0.15~2.0 GHz frequency range. Tension, shear, fatigue and impact load test were performed to evaluate structural strength of CLAS. Antenna performance test after every structural strength test was conducted to check the effect of structural test to antenna performance. After the application of new test and evaluation procedure to validate a new CLAS, a design improvement was found.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.176-176
• /
• 2010

One of the critical issues for applications of flexible organic thin film transistors (OTFTs) for flexible electronic systems is the electrical stabilities of the OTFT devices, including variation of the current on/off ratio (Ion/Ioff), leakage current, threshold voltage, and hysteresis under repetitive mechanical deformation. In particular, repetitive mechanical deformation accelerates the degradation of device performance at the ambient environment. In this work, electrical stability of the pentacene organic thin film transistors (OTFTs) employing multi-stack hybrid encapsulation layers was investigated under mechanical cyclic bending. Flexible bottom-gated pentacene-based OTFTs fabricated on flexible polyimide substrate with poly-4-vinyl phenol (PVP) dielectric as a gate dielectric were encapsulated by the plasma-deposited organic layer and atomic-layer-deposited inorganic layer. For cyclic bending experiment of flexible OTFTs, the devices were cyclically bent up to 105 times with 5mm bending radius. In the most of the devices after 105 times of bending cycles, the off-current of the OTFT with no encapsulation layers was quickly increased due to increases in the conductivity of the pentacene caused by doping effects from $O_2$ and $H_2O$ in the atmosphere, which leads to decrease in the Ion/Ioff and increase in the hysteresis. With encapsulation layers, however, the electrical stabilities of the OTFTs were improved significantly. In particular, the OTFTs with multi-stack hybrid encapsulation layer showed the best electrical stabilities up to the bending cycles of $10^5$ times compared to the devices with single organic encapsulation layer. Changes in electrical properties of cyclically bent OTFTs with encapsulation layers will be discussed in detail.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.9
• /
• pp.681-684
• /
• 2010

The $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ multilayered structure for the transparent electrodes in plasma display panel was designed by essential macleod program (EMP) and the multilayered film was deposited on a glass substrate by direct-current (DC)/radio-frequency (RF) magnetron sputtering system. During film deposition process, the Ag layer in $TiO_2$/Ag/$TiO_2$ structure became oxidized and the filter characteristic was degraded easily. In this study, ZnS layer was adopted as a diffusion blocking layer between $TiO_2$ and Ag to prevent the oxidation of Ag layer efficiently in $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ structure. Based on the AES depth profiling analysis, the Ag layer was effectively protected by the ZnS layer as compared with the $TiO_2$/Ag/$TiO_2$ multilayered films without ZnS as an antioxidant layer. The 3 times stacked $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ films have low sheet resistance of $1.22{\Omega}/{\square}$ and luminous transmittance was as high as 62% in the visible ranges.

• Journal of Electrochemical Science and Technology
• /
• v.8 no.3
• /
• pp.250-256
• /
• 2017

A graphene electrode with a novel in-plane structure is proposed and successfully adopted for use in supercapacitor applications. The in-plane structure allows electrolyte ions to interact with all the graphene layers in the electrode, thereby maximizing the utilization of the electrochemical surface area. This novel structure contrasts with the conventional out-of-plane stacked structure of such supercapacitors. We herein compare the volumetric capacitances of in-plane- and out-of-plane-structured devices with reduced multi-layer graphene oxide films as electrodes. The in-plane-structured device exhibits a capacitance 2.5 times higher (i.e., $327F\;cm^{-3}$) than that of the out-of-plane-structured device, in addition to an energy density of $11.4mWh\;cm^{-3}$, which is higher than that of lithium-ion thin-film batteries and is the highest among in-plane-structured ultra-small graphene-based supercapacitors reported to date. Therefore, this study demonstrates the potential of in-plane-structured supercapacitors with high volumetric performances as ultra-small energy storage devices.

• Applied Chemistry for Engineering
• /
• v.18 no.5
• /
• pp.506-510
• /
• 2007

Vacuum deposited 4,4',4''-tris(N-(1-naphthyl)-N-phenylamino)-triphenylamine (1-TNATA), a widely-used semiconductor material, is placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in OLEDs and a well-stacked 1-TNATA layer leads to stable and high efficiency devices by reducing the carrier injection barrier at the interface between the ITO anode and hole transport layers. According to Raman spectra, thermal annealing after deposition as well as electromagnetic field treatment during deposition lead to closer stacking of 1-TNATA molecules and resulted in molecular ordering. By thermal annealing at about $110^{\circ}C$, an increase in current flow through the film by over 25% was observed. Molecularly-ordered 1-TNATA films played an important role in achieving higher luminance efficiency as well as higher power efficiency of the multi-layered organic EL devices in the present work. Electromagnetic field treatment during deposition was less effective compared to thermal annealing

• Journal of the Korean Ceramic Society
• /
• v.49 no.6
• /
• pp.631-636
• /
• 2012

Conventional SONOS (poly-silicon/oxide/nitride/oxide/silicon) type memory is associated with a retention issue due to the continuous demand for scaled-down devices. In this study, $Al_2O_3/Y_2O_3/SiO_2$ (AYO) multilayer structures using a high-k $Y_2O_3$ film as a charge-trapping layer were fabricated for nonvolatile memory applications. This work focused on improving the retention properties using a $Y_2O_3$ layer with different tunnel oxide thickness ranging from 3 nm to 5 nm created by metal organic chemical vapor deposition (MOCVD). The electrical properties and reliabilities of each specimen were evaluated. The results showed that the $Y_2O_3$ with 4 nm $SiO_2$ tunnel oxide layer had the largest memory window of 1.29 V. In addition, all specimens exhibited stable endurance characteristics (program/erasecycles up to $10^4$) due to the superior charge-trapping characteristics of $Y_2O_3$. We expect that these high-k $Y_2O_3$ films can be candidates to replace $Si_3N_4$ films as the charge-trapping layer in SONOS-type flash memory devices.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.129-129
• /
• 2010

적외선 검출소자(Infrared Photodetector)는 근적외선에서 원적외선 영역에 이르는 광범위한 파장 범위의 적외선을 이용하는 기기로서 대상물이 방사하는 적외선 영역의 에너지를 흡수하여 이를 영상화할 수 있는 장비이다. 적외선 관련 기술은 2차 세계대전 기간에 태동하였으며, 현재에는 원거리 감지기술 등과 접목되면서 그 활용 분야가 다양해지고 있다. 특히 능동형 정밀 타격무기를 비롯한 감시 정찰 장비 및 지능형 전투 장비 시스템 등에 대한 요구를 바탕으로 보다 정밀하고 신속한 표적 감지 및 정보처리 기술에 관한 연구가 선진국을 통해서 활발히 진행되고 있다. 기존의 Bolometer 형식의 열 감지 소자는 반응 속도가 느리고 측정 감도가 낮은 단점이 있으며, MCT(HgCdTe)를 이용한 적외선 검출기의 경우 높은 기계적 결함과 77K 저온에서 동작해야하기 때문에 발생하는 추가 비용 등이 문제점으로 지적되고 있다[1]. 이에 반해 화합물 반도체 자기조립 양자점(self-assembled quantum dot)을 이용한 적외선 수광소자는 양자점이 가지는 불연속적인 내부 에너지 준위로 인하여, 높은 내부 양자 효율과 온도 안정성을 기대할 수 있으며, 고성능, 고속처리, 저소비전력 및 저소음의 실현이 가능하다. 본 연구에서는 적층 InAs/InGaAs dot-in-a-well 구조를 유기금속화학기상증착법을 이용하여 성장하고 이를 소자에 응용하였다. 균일한 적층 양자점의 성장을 위해서 원자현미경(atomic force microscopy)을 이용하여, 각 층의 양자점의 크기와 밀도를 관찰하였고, photoluminescence (PL)를 이용하여 발광특성을 연구하였다. 각 층간의 GaAs space layer의 두께와 온도 조절 과정을 조절함으로써 균일한 적층 양자점 구조를 얻을 수 있었다. 이를 이용하여 양자점의 전도대 내부의 에너지 준위간 천이(intersubband transition)를 이용하는 n-type GaAs/intrinsic InAs 양자점/n-type GaAs 구조의 양자점 적외선수광소자 구조를 성장하였다. 이 과정에서 상부 n-type GaAs의 성장 온도가 600도 이상이 되는 경우 발광효율이 급격히 감소하고, 암전류가 크게 증가하는 것을 관찰하였다. 이는 InAs 양자점과 주변 GaAs 간의 열에 의한 상호 확산에 의하여 양자점의 전자 구속 효과를 저해하는 것으로 설명된다.