• Title/Summary/Keyword: Multi-material structure

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A Study on the Development Process and Structure of the Machine and Material Industrial Cluster in Yeongnam Region (영남지역 기계금속산업클러스터의 형성과정과 구조 분석)

  • Kwon, O-Hyeok
    • Journal of the Economic Geographical Society of Korea
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    • v.13 no.2
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    • pp.196-218
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    • 2010
  • This study is to investigate the development process and the structure of the machine and material industrial clusters in Yeongnam region, Korea. In theoretical analysis, it is proposed that the wide area industrial cluster has three type of development process and a duplicate (or multi-level) spatial structure. We can ascertain from the case study of industrial clusters in Yeongnam region that An wide machine and material industrial cluster has been formed in Yeongnam region and the cluster has the duplicate structure or multi-level structure.

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Electrical characteristics of the multi-result MOSFET (Multi result MOSFET의 에피층 농도에 따른 전기적 특성분석)

  • Kim, Hyoung-Woo;Kim, Sang-Cheol;S대, Kil-Soo;Kim, Eun-Dong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.365-368
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    • 2004
  • Charge compensation effects in multi-resurf structure make possible to obtain high breakdown volatage and low on-resistance in vertical MOSFET. In this paper, electrical characteristics of the vertical MOSFET with multi epitaxial layer is presented. Proposed device has n and p-pillar for obtaining the charge compensation effects and The doping concentration each pillar is varied from $5{\times}10^{14}\;to\;1{\times}10^{16}/cm^3$. The thickness of the proposed device also varied from $400{\mu}m\;to\;500{\mu}m$. Due to the charge compensation effects, 4500V of breakdown voltage can be obtained.

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An integrated manufacturing and distribution model for a multi-echelon structure

  • Hwang, Heung-Suk
    • Proceedings of the Korean Operations and Management Science Society Conference
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    • 1990.04a
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    • pp.222-244
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    • 1990
  • A multi-echelon structure of manufacturing and distribution system in considered, where the raw materials are transformed into a finished good through a number to manufacturing echelons and it is distributed to the lower echelons(retailers, or customers). The raw material, work-in-process, finished good inventory and the distribution costs are unified into one model. The objective is to determine the ordering policy of raw materials, manufacturing lot size, the number of sub-batch and the distribution policy of the finished good which minimize the annual total system cost. A computer program for a heuristic search technique is developed, by which a numerical example is examined.

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Multiscale Stress Analysis of Palladium/Carbon Fiber Composites for the Hydrogen High Pressure Vessel (수소고압저장용기용 팔라듐 첨가 탄소섬유복합재에 대한 멀티스케일 응력해석)

  • Park, Woo Rim;Kwon, Oh Heon
    • Journal of the Korean Society of Safety
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    • v.33 no.2
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    • pp.1-7
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    • 2018
  • The multi-scale analysis is more proper and precise for composite materials because of considering the individual microscopic structure and properties of each material for composite materials. The purpose of this study is to verify the validity of using palladium particles in carbon/fiber composites by multi-scale analysis. The palladium is a material for itself to detect leaking hydrogen by using the property of adsorbing hydrogen. The macroscopic model material properties used in this study are homogeneous material properties from microstructure. Homogenized material properties that are calculated from periodic boundary conditions in the microscopic representative volume element model of each macroscopic analysis model. In this study, three macroscopic models were used : carbon fiber/epoxy, carbon fiber/palladium, palladium/epoxy. As a result, adding palladium to carbon/epoxy composite is not a problem in terms of strength.

A Study on Electric Characteristics of Multi-layer by Light Organic Emitting Diode (유기발광소자(Organic Light Emitting Diode)의 다층박막에 대한 전기적 특성 연구)

  • Lee Jung-Ho
    • Journal of Korea Society of Industrial Information Systems
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    • v.10 no.2
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    • pp.76-81
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    • 2005
  • This research approached electrical characteristics of organic light emitting diodes getting into the spotlight by next generation display device. Basic mechanism of OLED's emitting is known as that electron by cathode of lower work function and hole by anode of higher work function are driven and recombine exciton-state being flowed in emitting material layer passing carrier transport layer In order to make many electron-hole pairs, we must manufacture device in multi-layer structure. There are Carrier Injection Layer(CIL), Carrier Transport Layer(CTL) and Emitting Material Layer(EML) in multi-layer structure. It is important that regulate thickness of layer for high luminescence efficiency and set mobility of hole and electron.

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ED-FEM multi-scale computation procedure for localized failure

  • Rukavina, Ivan;Ibrahimbegovic, Adnan;Do, Xuan Nam;Markovic, Damijan
    • Coupled systems mechanics
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    • v.8 no.2
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    • pp.111-127
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    • 2019
  • In this paper, we present a 2D multi-scale coupling computation procedure for localized failure. When modeling the behavior of a structure by a multi-scale method, the macro-scale is used to describe the homogenized response of the structure, and the micro-scale to describe the details of the behavior on the smaller scale of the material where some inelastic mechanisms, like damage or plasticity, can be defined. The micro-scale mesh is defined for each multi-scale element in a way to fit entirely inside it. The two scales are coupled by imposing the constraint on the displacement field over their interface. An embedded discontinuity is implemented in the macro-scale element to capture the softening behavior happening on the micro-scale. The computation is performed using the operator split solution procedure on both scales.

The Multi-layer Fabrication and Characteristic Performance for Dark Current Reduction of Amorphous Selenium (비정질 셀레늄의 누설전류 저감을 위한 다층구조 제작 및 특성 평가)

  • Park, J.K.;Kang, S.S.;Suk, D.W.;Lee, H.W.;Nam, S.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.849-852
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    • 2002
  • Recently, amorphous selenium is used as x-ray conversion material for flat-panel x-ray detector. In this paper, we investigated the effect of breakdown under high voltage and leakage current in PN-type multi-layer structure based on p-type a-Se and n-type conductive thin film. Experimental results show that the multi-layer based detector reduced leakage current because n-type CeO2 conductive layer prevent from hole injection into a-Se layer from collection electrode, Also, the breakdown voltage was improved by dielectric layer between a-Se and top electrode.

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960MHz band multi-layer VCO design (960MHz 대역 다층구조 VCO 설계)

  • Rhie, Dong-Hee;Jung, Jin-Hwee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.410-413
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    • 2001
  • In this paper, we present results of this that design of the multi-layer VCO(Voltage Controlled Oscillator), which is composed of the resonation circuit and the oscillation circuit, using EM simulator and nonlinear RF circuit simulator. EM simulator is used for acquiring EM(Electromagnetic) characteristics of conductor pattern as well as designing multi-layer VCO, Acquired EM characteristics of the circuit pattern was used like real components at nonlinear RF circuit simulator. Finally VCO is simulated at nonlinear RF circuit simulator. The material for the circuit pattern was Ag and the dielectric was DuPont #9599, which is applied for L TCC process. The structure is constructed with 4 conducting layer. Simulated results showed that the output level was about 1[dBm], the phase noise was 102 [dBc/Hz] at 30[kHz] offset frequency, the harmonics -8dBc, and the control voltage sensitivity of 30[MHz/V] with a DC current consumption of l0[mA]

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960MHz band multi-layer VCO design (960MHz대역 다층구조 VCO 설계)

  • 이동희;정진휘
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.410-413
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    • 2001
  • In this paper, we present results of this that design of the multi-layer VCO(Voltage Controlled Oscillator), which is composed of the resonation circuit and the oscillation circuit, using EM simulator and nonlinear RF circuit simulator. EM simulator is used for acquiring EM(Electromagnetic) characteristics of conductor pattern as well as designing multi-layer VCO, Acquired EM characteristics of the circuit pattern was used like real components at nonlinear RF circuit simulator. Finally VCO is simulated at nonlinear RF circuit simulator. The material for the circuit pattern was Ag and the dielectric was Dupont #9599, which is applied for LTCC process. The structure is constructed with 4 conducting layer. Simulated results showed that the output level was about 1[dBm], the phase noise was 102 [dBc/Hz] at 30[kHz] offset frequency, the harmonics -8dBc, and the control voltage sensitivity of 30[MHz/V] with a DC current consumption of 10[mA].

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The Characteristics of Multi-layer Structure LED with MgxZn1-xO Thin Films (MgxZn1-xO를 활용한 Multi-layer 구조 LED 특성에 관한 연구)

  • Son, Ji-Hoon;Kim, Sang-Hyun;Jang, Nak-Won;Kim, Hong-Seong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.10
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    • pp.811-816
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    • 2012
  • The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing ZnO/MgZnO structure LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The ZnO thin films have sufficient crystallinity on the high RF power. As RF power of ZnO target increased, the contents of MgO in the $Mg_xZn_{1-x}O$ film decreased. LED was manufactured using ZnO/MgZnO multi-layer on p-GaN/$Al_2O_3$ substrate. Threshold voltage of multi-layer LED was appeared at 8 V, and it was luminesced at wave length of 550 nm.