• Applied Science and Convergence Technology
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• 제24권2호
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• pp.33-40
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• 2015

$ZrO_2$ and Al-Zr composite oxide film was prepared by vacuum assisted sol-gel dip coating method and anodizing. $ZrO_2$ films annealed above $400^{\circ}C$ have tetragonal structure. $ZrO_2$ layers inside etch pits were successfully coated from the $ZrO_2$ sol. The double layer structures of samples were obtained after being anodized at 100 V to 600 V. From the TEM images, it was found that the outer layer was $Al_2O_3$, the inner layer was multi-layer of $ZrO_2$, Al-Zr composite oxide and Al hydrate. The capacitance of $ZrO_2$ coated foil exhibited about 28.3% higher than that of non-coating foil after being anodized at 100 V. The high capacitance of $ZrO_2$ coated foils anodized at 100 V can be attributed to the relatively high percentage of inner layer in total thickness. The electrical properties, such as withstanding voltage and leakage current of coated and non-coated Al foils showed similar values. From the results, $ZrO_2$ and Al-Zr composite oxide is promising to be used as the partial dielectric of high voltage capacitor to increase the capacitance.

• 대한전자공학회논문지
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• 제23권5호
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• pp.699-705
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• 1986

Sb2S3 thin films were fabricated by vacuum evaporation of compound Sb2S3 at a pressure of 10**-5 torr. and in argon ambient. Then, their electrical and photoconductive properties were investigated. The Sb2S3 glass-layer showed maximum photosensitivity at the deposition rate of 250\ulcornersec, and Sb2S3 porous layer had mininum dielectric constant of 1.5 at the deposition rate of 0.3 um/sec and argon partial pressure of 0.2torr. Sb2S3 multi-layers were prepared at the different thickness ratio (B/A) to find the proper structural property suited for camera pick-up tube. Here, A is the sum of the thickness of Sb2S3 porous layer and Sb2S3 fine grain layer, and B is the thickness of Sb2S3 fine grain layer. As a result, photosensitivity had a peak value at the thickness ratio (B/A) of 60%.

• 전자공학회논문지
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• 제50권3호
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• pp.16-22
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• 2013

n 개의 균일한 결합선로를 해석하기 위하여 2n-port 어드미턴스 매트릭스의 추출에 기초한 일반적인 특성화 절차가 제시된다. 본 논문에서는 비대칭 다중 결합선로를 해석하기 위하여 시간영역의 유한차분법을 사용하여 정규화 모드 파라미터 접근법의 적용을 제안한다. 주파수 의존적인 정규화 모드 파라미터는 2n-port 어드미턴스 매트릭스로부터 얻어지고, 이로부터 주파수 의존적인 전파상수와 유효 유전율 및 결합선로의 특성임피던스를 계산할 수 있다. 이 기법을 설명하기 위해 몇몇의 실질적인 다중 유전체상의 결합선로 구조들이 모의 실험되었으며, 특히 전도체가 유전체 사이에 내재된 형태의 선로가 해석되었다. 시간영역 유한 차분법을 활용한 결과는 Spectral Domain Method의 모의실험 결과와 비교하였고, 잘 일치함을 보였다. 시간영역의 특성화 절차에 기인한 유한차분법은 얇거나 두꺼운 혼성 구조 뿐 아니라 다층 PCB상의 다중의 전도체 결합 선로 설계를 위한 훌륭한 광대역 모의실험 도구가 됨을 볼 수 있다.

• 한국전자통신학회논문지
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• 제16권4호
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• pp.763-770
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• 2021

본 논문에서는 ISM 대역에서 동작하는 BAN(Body Area Network) 신호의 영향을 배제하기 위해서 4.567 GHz에서 작동하는 온 바디 마이크로스트립 패치 안테나의 설계 및 최적화 과정을 제시하였다. 하지 해면골 골다공증 감시를 위한 이 안테나는 향상된 반사손실 및 대역폭을 가지면서, 경박단소하도록 설계하였다. 적용된 하지 주변 구조는 5층 유전체 평면으로 구조화 하였으며, 손실을 고려한 각층의 복소유전상수는 다중 Cole-Cole 모델 매개변수를 사용하여 계산하였으나, 정상 및 골다공증 해면골은 단극형 모델을 사용하였다. 팬텀상 동축급전 안테나의 반사손실은 4.567 GHz에서 -67.26 dB이고, 골다공증 경우 동일 주파수에서 반사손실차 𝚫S₁₁=35.88 dB이고, 공진 주파수 차는 약 7 MHz이다.

• 한국전기전자재료학회논문지
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• 제14권7호
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• pp.567-571
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• 2001

We investigated the structural and electrical properties of Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$(BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm. BZT films were prepared on Pt/SiO$_2$/Si substrate with the various substrate temperature by a RF magnetron sputtering system. When the substrate temperature was above 50$0^{\circ}C$, we obtained multi-crystalline BZT films oriented to (110), (111), and (200) directions. As the substrate temperature increases, the films are crystallized and their dielectric constants become high. C-V characteristic curve of the film deposited at high temperature is more sensitive than that of the film deposited at low temperature. The parameters of the BZT film are as follows; the dielectric constants(dissipation factors) at 1 MHz are 95(0.021), 140(0.024), and 240(0.033) deposited at 400, 500, $600^{\circ}C$, respectively; the leakage currents at 666.7 kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ fo the films deposited at 400, 500, and 600 $^{\circ}C$, respectively; the leakage currents at 666.7kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ for the films deposited at 400, 500, $600^{\circ}C$, respectively. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties, but dielectric constant for application is a little small.ll.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.217-221
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• 1997

We have investigated the ferroelectric properties of multi-layered SrBi$_2$Ta$_2$$O_{9}$Pb(Zr,Ti)O$_3$, SBT/PZT, thin film capacitors. Specimens were prepared onto Pt-coated Si wafer by sol-gel method. Ferroelectric properties of these finns could be obtained only for thin SBT layers below 50nm in thickness. The values of dielectric constant and remnant polarization depend mainly on the thickness of SBT layer, which arises from the paraelectric interface layer between SBT and PZT due to the thermal diffusion of Pb. The value of remnant poarization of PZT/SBT is greater than that of SBT, and the plarization fatigue behaviors of PZT/SBT/Pt capacitors are somewhat improved as compared with those of PZT/Pt.t.

• 한국초전도ㆍ저온공학회논문지
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• 제4권1호
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• pp.105-109
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• 2002

The short-term AC breakdown strength of laminated polypropylene insulating Paper (PPLP) has been studied for cold dielectric of high temperature superconductivity power cables. The design and operating conditions of the electrode system for studying of short-term breakdown strength of one-layer and multi-layer PPLP samples are discussed in liquid nitrogen(LN2) state. The influence of various operating factors (geometry and dimension of electrodes, speed of tested voltage, thickness of test sample) on the value of short-term AC breakdown strength at cryogenic temperature has been established.

• 한국정밀공학회지
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• 제21권7호
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• pp.22-29
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• 2004

As a result of high integration of semiconductor device, the global planarization of multi-layer structures is necessary. So the chemical mechanical polishing(CMP) is widely applied to manufacturing the dielectric layer and metal line in the semiconductor device. CMP process is under influence of polisher, pad, slurry, and process itself, etc. In comparison with the general CMP which uses the slurry including abrasives, fixed abrasive pad takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing & erosion due to the reduction of abrasive concentration especially. This paper introduces the manufacturing technique of fixed abrasive pad using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. And the tungsten CMP using fixed abrasive pad achieved the good conclusion in terms of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.

• 한국광학회지
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• 제13권3호
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• pp.215-222
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• 2002

광기록매체용 Ge-Sb-Te다층박막 성장과정을 in-situ 타원계를 사용하여 실시간으로 모니터하여 각 층의 두께를 제어하고 성장된 Ge-Sb-Te 다층박막을 ex-site 분광타원법으로 확인하였다. 보호층인 ZnS-SiO$_2$와 기록층인 Ge$_2$Sb$_2$Te$_{5}$을 단결정실리콘 기층 위에 스퍼터링 방법으로 각각 성장시키면서 구한 타원상수 성장곡선을 분석하여 성장에 따르는 보호층의 균일성 및 기록 층의 밀도변화를 파악하고 이를 기초로 하여 Ge-Sb-Te광기록 다층박막의 두께를 정밀하게 제어하였다. Ge$_2$Sb$_2$Te$_{5}$ 단층박막 시료의 복소굴절율은 eX-Situ 분광타원분석을 통하여 구하였다. 제작된 다층구조는 설정된 다층구조인 ZnS-SiO$_2$(1400$\AA$)$\mid$ GST(200 $\AA$)$\mid$ZnS-SiO$_2$(200$\AA$)와 각 층의 두께 및 전체 두께에서 1.5% 이내에서 일치하는 정확도를 보여주었다.주었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.511-513
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• 2002

Electro-optical characteristics of new multi-domain vertical-alignment (MVA) liquid crystal displays (LCDs) with negative dielectric anisotropy on a homeotropic photopolymer were studied. Good voltage-transmittance (V-T) curves by the new MVA-LCD on the homeotropic photo-polymer were obtained. Also, the stable response time of MVA-LCD on the homeotropic photopolymer can be achieved. The viewing angle of the new MVA-LCD could be improved by the grating groove with UV exposure and development on the photo-polymer.