• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.269-269
• /
• 2012

A new ion source has been designed, fabricated, and installed at the NBTS (Neutral Beam Test Stand) at the KAERI (Korea Atomic Energy Research Institute) site. The goalis to provide a 100 keV, 2MW deuterium neutral beam injection as an auxiliary heating of KSTAR (Korea Super Tokamak Advanced Research). To cope with power demand, an ion current of 50 A is required considering the beam power loss and neutralization efficiency. The new ion source consists of a magnetic cusp bucket plasma generator and a set of tetrode accelerators with circular copper apertures. The plasma generator for the new ion source has the same design concept as the modified JAEA multi-cusp plasma generator for the KSTAR prototype ion source. The dimensions of the plasma generator are a cross section of $59{\times}25cm^2$ with a 32.5 cm depth. The anode has azimuthal arrays of Nd-Fe permanent magnets (3.4 kG at surface) in the bucket and an electron dump, which makes 9 cusp lines including the electron dump. The discharge properties were investigated preliminarily to enhance the efficiency of the beam extraction. The discharge of the new ion source was mainly controlled by a constant power mode of operation. The discharge of the plasma generator was initiated by the support of primary electrons emitted from the cathode, consisting of 12 tungsten filaments with a hair-pin type (diameter = 2.0 mm). The arc discharge of the new ion source was achieved easily up to an arc power of 80 kW (80 V/1000 A) with hydrogen gas. The 80 kW capacity seems sufficient for the arc power supply to attain the goal of arc efficiency (beam extracted current/discharge input power = 0.8 A/kW). The accelerator of the new ion source consists of four grids: plasma grid (G1), gradient grid (G2), suppressor grid (G3), and ground grid (G4). Each grid has 280 EA circular apertures. The performance tests of the new ion source accelerator were also finished including accelerator conditioning. A hydrogen ion beam was successfully extracted up to 100 keV /60 A. The optimum perveance is defined where the beam divergence is at a minimum was also investigated experimentally. The optimum hydrogen beam perveance is over $2.3{\mu}P$ at 60 keV, and the beam divergence angle is below $1.0^{\circ}$. Thus, the new ion source is expected to be capable of extracting more than a 5 MW deuterium ion beam power at 100 keV. This ion source can deliver ~2 MW of neutral beam power to KSTAR tokamak plasma for the 2012 campaign.

• Journal of the Korean Ceramic Society
• /
• v.41 no.6
• /
• pp.456-463
• /
• 2004

To enhance the performance of anode-supported SOFC, single cell fabrication procedure was changed for better and resulting power generating characteristics of single cell were investigated. Liquid condensation process was employed for the granulation of NiO/YSZ powder mixture and the produced powder granules were compacted into anode green substrate by uni-axial pressing. YSZ electrolyte was printed on green substrate via screen-printing method and co-fired at 1400$^{\circ}C$ for 3 h. LSM/YSZ composite cathode of which the composition and heat treatment condition was adjusted to minimize the polarization#resistance with AC-impedance spectroscopy, was screen printed. The final single cell size from this multi-step procedure was 5${\times}$5 $\textrm{cm}^2$ and 10${\times}$10 $\textrm{cm}^2$. The maximum power densities of 5${\times}$5 and 10${\times}$10 single cells were about 0.45 W/$\textrm{cm}^2$ and 0.22 W/$\textrm{cm}^2$ at 800$^{\circ}C$, which are two times superior than those from single cells fabricated by the conventional process in previous our work.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 1999.10a
• /
• pp.15-15
• /
• 1999

In chip plating, several parameters must be taken into consideration. Current density, solution concentration, pH, solution temperature, components volume, chip and media ratio, barrel geometrical shape were most likely found to have an effect to the process yields. The 3 types of barrels utilized in chip plating industry are the conventional rotating barrel. vibrational barrel (vibarrel), and the centrifugal type. Conventional rotating barrel is a close type and is commonly used. The components inside the barrel are circulated by the barrel's rotation at a horizontal axis. Process yield has known to have higher thickness deviation. The vibrational barrel is an open type which offers a wide exposure to electrolyte resulting to a stable thickness deviation. It rotates in a vertical axis coupled with multi-vibration action to facilitate mixed up and easy transportation of components, The centrifugal barrel has its plated work centrifugally compacted against the cathode ring for superior electrical contact with simultaneous rotary motion. This experiment has determined the effect of barrel vibration intensity to the plating thickness distribution. The procedures carried out in the experiment involved the overall plating process., cleaning, rinse, Nickel plating, Tin-Lead plating. Plating time was adjusted to meet the required specification. All other parameters were maintained constant. Two trials were performed to confirm the consistency of the result. The thickness data of the experiment conducted showed that the average mean value obtained from higher vibrational intensity is nearer to the standard mean. The distribution curve shown has a narrower specification limits and it has a reduced variation around the target value, Generally, intensity control in vi-barrel facilitates mixed up and easy transportation of components, However, it is desirable to maintain an optimum vibration intensity to prevent solution intrusion into the chips' internal electrode. A cathodic reaction can occur in the interface of the external and internal electrode. $2HD{\;}+{\;}e{\;}{\rightarrow}20H{\;}+{\;}H_2$ Hydrogen can penetrate into the body and create pressure which can cause cracks. At high intensity, the chip's motion becomes stronger, its contact between each other is delayed and so plating action is being controlled. However, the strong impact created by its collision can damage the external electrode's structure thereby resulting to bad plating condition. 1 lot of chip was divided into two equal partion. Each portion was loaded to the same barrel one after the other. Nickel plating and tin-lead plating was performed in the same station. Portion A maintained the normal barrel vibration intensity and portion B vibration intensity was increased two steps higher. All other parameters, current, solution condition were maintained constant. Generally, plating method find procedures were carried out in a best way to maintained the best plating condition. After plating, samples were taken out from each portion. molded and polished. Plating thickness was investigated for both. To check consistency of results. 2nd trial was done now using different lot of another characteristics.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.204-205
• /
• 2011

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is a most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. For best performance of thin film silicon solar cell, the dopant profiles at p/i and i/n interfaces need to be as sharp as possible. The sharpness of dopant profiles can easily achieved when using multi-chamber PECVD equipment, in which each layer is deposited in separate chamber. However, in a single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of a single-chamber PECVD system in spite of the advantage of lower initial investment cost for the equipment. In order to resolve the cross-contamination problem in single-chamber PECVD systems, flushing method of the chamber with NH3 gas or water vapor after doped layer deposition process has been used. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. A single-chamber VHF-PECVD system was used for superstrate type p-i-n a-Si:H solar cell manufacturing on Asahi-type U FTO glass. A 80 MHz and 20 watts of pulsed RF power was applied to the parallel plate RF cathode at the frequency of 10 kHz and 80% duty ratio. A mixture gas of Ar, H2 and SiH4 was used for i-layer deposition and the deposition pressure was 0.4 Torr. For p and n layer deposition, B2H6 and PH3 was used as doping gas, respectively. The deposition temperature was $250^{\circ}C$ and the total p-i-n layer thickness was about $3500{\AA}$. In order to remove the deposited B inside of the vacuum chamber during p-layer deposition, a high pulsed RF power of about 80 W was applied right after p-layer deposition without SiH4 gas, which is followed by i-layer and n-layer deposition. Finally, Ag was deposited as top electrode. The best initial solar cell efficiency of 9.5 % for test cell area of 0.2 $cm^2$ could be achieved by applying the in-situ plasma cleaning method. The dependence on RF power and treatment time was investigated along with the SIMS analysis of the p-i interface for boron profiles.

• Korean Chemical Engineering Research
• /
• v.50 no.3
• /
• pp.562-566
• /
• 2012

A novel design of tubular segmented-in-series(SIS) solid oxide fuel cell (SOFC) sub module was presented in this paper. The tubular ceramic support was fabricated by the extrusion technique. The NiO-YSZ anode and the yttria-stabilized zirconia (YSZ) electrolyte were deposited onto the ceramic support by dip coating method. After sintering at $1350^{\circ}C$ for 5 h, a dense and crack-free YSZ film was successfully fabricated. Also, the multi-layered cathode composed of LSM-YSZ composite, LSM and LSCF were coated onto the sintered ceramic support by dip coating method and sintered at $1150^{\circ}C$. The performance of the tubular SIS SOFC cell and sub module electrically connected by the Ag-glass interconnect was measured and analysed with different fuel flow and operating temperature.

• Korean Journal of Clinical Laboratory Science
• /
• v.50 no.4
• /
• pp.470-476
• /
• 2018

Facial motor evoked potential (FMEP) by multi-pulse transcranial electrical stimulation (mpTES) can complement free-running electromyography (EMG) and direct facial nerve stimulation to predict the functional integrity of the facial nerve during cerebello-pontine angle (CPA) tumor surgery. The purpose of this paper is to examine the standardized test methods and the usefulness of FMEP as a predictor of facial nerve function and to minimize the incidence of facial paralysis as an aftereffect of surgery. TES was delivered through electrode Mz (cathode) - M3/M4 (anode), and extracranially direct distal facial muscle excitation was excluded by the absence of single pulse response (SPR) and by longer onset latency (more than 10 ms). FMEP from the orbicularis oris (o.oris) and the mentalis muscle simultaneously can improve the accuracy and success rate compared with FMEP from the o.oris alone. Using the methods described, we can effectively predict facial nerve outcomes immediately after surgery with a reduction of more than 50% of FMEP amplitude as a warning criterion. In conclusion, along with free-running EMG and direct facial nerve stimulation, FMEP is a useful method to reduce the incidence of facial paralysis as a sequela during CPA tumor surgery.