• 한국염색가공학회지
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• 제31권2호
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• pp.65-76
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• 2019

A multi-point touch input sensor having different sizes or different capacitance touch points connected by only one pair of signal transmission lines was fabricated using a polyimide film coated with a thin copper plate. The capacitance increases with the decrease in the number of sheets of fabric spacers placed between the two sheets of the polyimide film. Therefore, the touch input sensor could be manufactured without fabric spacers, which was possible by the action of the polyimide film as a dielectric material in the capacitor. On the multi-point touch sensor, higher capacitance was obtained when pressing wider-area touch points with 10mm to 25mm diameter on average. However, the capacitance of a system comprising two sheets of touch sensors was considerably low, causing a serious overlap of the capacitance values according to the data collected from the reliability test. Although the capacitance values could be increased by stacking several sheets of touch sensors, the overlap of data was still observed. After reducing the size of all touch points to 10mm and stacking up to eight sheets of sensors, reliable and consistent capacitance data was obtained. Five different capacitance signals could be induced in the sensors by pushing touch points simultaneously.

• 한국전기전자재료학회논문지
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• 제19권8호
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• pp.754-757
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• 2006

The inorganic multi-layer thin film encapsulation was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, sputter, inorganic multi-layer thin-film encapsulation was deposited onto the Polyethylene Terephthalate (PET) and their interface properties between inorganic and organic layer were investigated. In this investigation, the SiON, $SiO_2$ and parylene layer showed the most suitable properties. Under these conditions, the WVTR for PET can be reduced from level of $0.57g/m^2/day$ (bare subtrate) to $1*10^{-5}g/m^2/day$ after application of a SiON and $SiO_2$ layer. These results indicates that the $PET/SiO_2/SiON/Parylene$ barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.

• 한국세라믹학회지
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• 제37권12호
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• pp.1135-1139
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• 2000

본 연구에서는 Pt/Sn $O_2$박막의 CO 감지특성을 향상시키기 위하여 표면 형상을 제어하였다. Pt/Sn $O_2$계 박막센서의 최적 동작온도는 175$^{\circ}C$이었다. Pt가 12초 동안 증착된 Sn $O_2$가 200ppm의 CO 가스에 대하여 1.23의 최대감도를 나타내었고, 그 이상의 Pt 증착시간 증가에 따라 Sn $O_2$위의 Pt의 coverage가 증가하여 센서의 감도를 감소시켰다. 다층박막(multi-layer thin film)의 단층의 Pt/Sn $O_2$복합체 위에 다시 Sn $O_2$및 Pt의 cluster 층들을 연속적으로 증착함으로서 제작되었다. 단지 하나의 Pt 층만을 증착한 Sn $O_2$막보다 다층의 Pt/Sn $O_2$막이 더욱 우수한 감도( $R_{air}$/ $R_{co}$=1.72, CO: 200 ppm)를 나타내었다. Pt/Sn $O_2$다층박막의 우수한 감도의 원인은 Pt와 Sn $O_2$사이의 계면적 증대 때문인 것으로 생각되어 진다.다.

• 한국산학기술학회논문지
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• 제17권10호
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• pp.9-12
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• 2016

특정 광 파장 영역대역에서 광 반사율을 갖는 다층 박막을 DC펄스 스퍼터링 공정으로 제작하기 위하여 공정변수가 다층 박막의 광학 특성에 미치는 영향이 연구되었다. 다층 박막 필름을 제작하기위한 시뮬레이션이 이루어졌으며, DC펄스 스퍼터링 공정을 이용한 저 굴절률의 $SiO_2$와 고 굴절률의 $TiO_2$ 박막의 광학 특성에 미치는 공정 변수 파라미터가 연구되었다. DC펄스 스퍼터링 파워 2kW, 아르곤 가스 200sccm(standard cubic centimeter per minute)기준조건에서 산소가스 비율 12% 범위에서 제작한 $SiO_2$박막은 굴절률 1.46이었고 산소가스 1% 비율에서 제작한 $TiO_2$박막은 굴절률 2.27이었다. 이들 박막으로 구성된 고 굴절률 박막/저 굴절률 박막/고 굴절률 박막의 3층 다층 박막 구조의 광학설계 시뮬레이션 결과와 측정된 광 반사율 특성결과는 파장 대역에 걸쳐 유사한 경향이 있는 것으로 측정되었다. 근적외선 780nm에서 1200nm파장 대역 영역에서 광 반사율 45%이상의 성능을 갖는 다층 박막 필름을 제작할 수 있었고 근적외선 차단 기능 박막으로 사용될 것으로 기대된다.

• Journal of the Optical Society of Korea
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• 제18권3호
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• pp.236-243
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• 2014

Surface profiling and film thickness measurement play an important role for inspection. White light interferometry is widely used for engineering surfaces profiling, but its applications are limited primarily to opaque surfaces with relatively simple optical reflection behavior. The conventional bucket algorithm had given inaccurate surface profiles because of the phase error that occurs when a thin-film exists on the top of the surface. Recently, reflectometry and white light scanning interferometry were combined to measure the film thickness and surface profile. These techniques, however, have found that many local minima exist, so it is necessary to make proper initial guesses to reach the global minimum quickly. In this paper we propose combing reflectometry and white light scanning interferometry to measure the thin-film thickness and surface profile. The key idea is to divide the measurement into two states; reflectometry mode and interferometry mode to obtain the thickness and profile separately. Interferogram modeling, which considers transparent thin-film, was proposed to determine parameters such as height and thickness. With the proposed method, the ambiguity in determining the thickness and the surface has been eliminated. Standard thickness specimens were measured using the proposed method. Multi-layered film measurement results were compared with AFM measurement results. The comparison showed that surface profile and thin-film thickness can be measured successfully through the proposed method.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.1015-1019
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• 2002

The deposition of $SrGa_2S_4$ thin film phosphors doped with Ce or Eu aiming at application for FEDs has been carried out by a multi-source deposition technique. A $SrGa_2S_4$ phase was formed by annealing process and $SrGa_2S_4$ thin films which were deposited using a $Ga_2S_3/Sr$ flux ratio larger than 50 and annealed in $H_2$S showed luminance and luminous efficiency of about 1700 cd/$m^2$ and 2.95 lm/W, respectively, with (0.13, 0.10) chromaticity in the activation with Ce, and about 4000 cd/$m^2$ and 7.05 lm/W, respectively, with (0.36, 0.60) under excitation with 3 kV and 60A/$cm^2$. The results obtained this experiment demonstrate the potential of $SrGa_2S_4$ thin film phosphors for FED screens.

• Transactions on Electrical and Electronic Materials
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• 제4권4호
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• pp.13-17
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• 2003

This paper deals with the edge effect in thin insulating films, focusing on their dependence on film thickness. The finding is that the electric field is lowered at the edge as the film thickness is reduced, which, in turn, is closely related to dielectric breakdown voltage. In order to analyze this phenomenon, a simple capacitor model is introduced with which dependence of dielectric breakdown voltage around the electrode edge on the film thickness is explained. Due to analytical difficulty to get the expression of electrical field strength at the edge, an equivalent circuit approach is used to find the voltage expression first and then the electric field expression using it. The relation gets to an agreement with the experimental findings shown in the paper. This outcome may be extended to solve similar problems in multi-layer insulating films.

• Transactions on Electrical and Electronic Materials
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• 제10권2호
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• pp.40-43
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• 2009

The authors fabricated a nanopatterned surface on a GaN thin film deposited on a sapphire substrate and used that as an epitaxial wafer on which to grow an InGaN/GaN multi-quantum well structure with metal-organic chemical vapor deposition. The deposited GaN epitaxial surface has a two-dimensional photonic crystal structure with a hexagonal lattice of 230 nm. The grown structure on the nano-surface shows a Raman shift of the transverse optical phonon mode to $569.5\;cm^{-1}$, which implies a compressive stress of 0.5 GPa. However, the regrown thin film without the nano-surface shows a free standing mode of $567.6\;cm^{-1}$, implying no stress. The nanohole surface better preserves the strain energy for pseudo-morphic crystal growth than does a flat plane.

• 전기학회논문지
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• 제65권3호
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• pp.445-451
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• 2016

General fuse elements of solution for fast acting operation characteristics made using silver or silver alloy, those are not able to dominate cost competition to the advanced global leaders that have not only high technology but competitive price. In this study, the method that compose the fuse elements manufactured solution of fast acting operation characteristics by using precision multi-layer thin film plating and helical cutting process from low-priced copper metal. Furthermore, in order to move rated current line of fuse due to the heat loses, the manufacture construction method of fixed resistor is introduced, and then Ni-P plating layer and Sn plating layer are introduced multiply for controling fine opening time characteristics. So this study can establish the high productive and low-priced production method.

• 한국전기전자재료학회논문지
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• 제28권1호
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• pp.7-11
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• 2015

In this study, $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film were prepared on glass substrate by DC/RF magnetron sputtering method. To prevent interfacial reaction between Ag and ITO layer, Ti buffer layer was inserted. Optical properties and sheet resistance were studied depending on laminating times of each multi-layered film especially in visible ray. The simulation program, EMP (essential macleod program), was adopted and compared with experimental data to expect the experimental result. It was found out that the transmittance of the first stacked $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film was more than 90%. However, with increasing stacking times, the optical properties of $Si_3N_4$/SnZnO/AZO/Ag/Ti/ITO multi-layer film get worse. Consequently, Ti layer is good for oxidation barrier, but too many uses of this layer may have an adverse effect to optical properties of TCO film.