• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.2
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• pp.71-79
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• 1999

In this paper, high concentration.yield trulti-discharge type ozonizer( MDO ) of new discharge type using superposed silent discharge was designed and manufactured MDO can be consisted with 3 kind of superposed silent discharge type ozmizer( SDO ) in accordance with power supply method that suwlying power, which has $180[^{\circ}]$ phase difference, to 3 electrodes and amble gap. At the rroment, discharge characteristics and ozone generation characteristics of each SDO were investigated in accordance with quantity of suwlied gas, the number of SDO, and the shapes of each SDO. In result, ozone generatioo characteristics of 17185[ppm] and 783[g/kWh] were obtained, and when ozone of 17185[ppm] was in contact with dyeing water waste, decolorization characteristics was excellent, so it confinred that MDO could be used as water environment improvement facility.cility.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.9
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• pp.681-684
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• 2010

The $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ multilayered structure for the transparent electrodes in plasma display panel was designed by essential macleod program (EMP) and the multilayered film was deposited on a glass substrate by direct-current (DC)/radio-frequency (RF) magnetron sputtering system. During film deposition process, the Ag layer in $TiO_2$/Ag/$TiO_2$ structure became oxidized and the filter characteristic was degraded easily. In this study, ZnS layer was adopted as a diffusion blocking layer between $TiO_2$ and Ag to prevent the oxidation of Ag layer efficiently in $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ structure. Based on the AES depth profiling analysis, the Ag layer was effectively protected by the ZnS layer as compared with the $TiO_2$/Ag/$TiO_2$ multilayered films without ZnS as an antioxidant layer. The 3 times stacked $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ films have low sheet resistance of $1.22{\Omega}/{\square}$ and luminous transmittance was as high as 62% in the visible ranges.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.12
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• pp.1-7
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• 2010

In this paper, we suggested a sensing method of PoRAM with the multilevel cell When a specific voltage is applied between top and bottom electrodes of PoRAM unit cell, we can distinguish cell states by changing resistance values of the cell. Especially, we can use the PoRAM as the multilevel cell due to have four stable resistance values per cell. Therefore, we proposed an address decoding method, sense amplifier and control signal for sensing of a multilevel cell. The sense amplifier is designed based on a current comparator that compared a cell current the cell with a reference current, and have a low input impedance for a amplification of the current. The proposed circuit was designed in a $0.13{\mu}m$ CMOS technology, we verified to sense each data "00", "01", "10", "10" by four states of a cell current.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.91-97
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• 2013

Self-heating effects during operation of high current AlGaN/GaN power transistors degrade the current-voltage characteristics. In particular, this problem becomes serious when a low thermal conductivity Si substrate is used. In this work, AlGaN/GaN-on-Si devices were fabricated with various channel widths and Si substrate thicknesses in which the structure dependent self-heating effects were investigated by temperature dependent measurements as well as thermal simulation. Accordingly, a device structure that can effectively dissipate the heat was proposed in order to achieve the maximum current in a multi-channel, large area device. Employing via-holes and common electrodes with a 100 ${\mu}m$ Si substrate thickness improved the current level by 75% reducing the channel temperature by 68%.

• Journal of Electrochemical Science and Technology
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• v.8 no.3
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• pp.250-256
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• 2017

A graphene electrode with a novel in-plane structure is proposed and successfully adopted for use in supercapacitor applications. The in-plane structure allows electrolyte ions to interact with all the graphene layers in the electrode, thereby maximizing the utilization of the electrochemical surface area. This novel structure contrasts with the conventional out-of-plane stacked structure of such supercapacitors. We herein compare the volumetric capacitances of in-plane- and out-of-plane-structured devices with reduced multi-layer graphene oxide films as electrodes. The in-plane-structured device exhibits a capacitance 2.5 times higher (i.e., $327F\;cm^{-3}$) than that of the out-of-plane-structured device, in addition to an energy density of $11.4mWh\;cm^{-3}$, which is higher than that of lithium-ion thin-film batteries and is the highest among in-plane-structured ultra-small graphene-based supercapacitors reported to date. Therefore, this study demonstrates the potential of in-plane-structured supercapacitors with high volumetric performances as ultra-small energy storage devices.

• Advances in materials Research
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• v.6 no.2
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• pp.169-184
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• 2017

Electro-Discharge machining (EDM) is a thermal process comprising a complex metal removal mechanism. This method works by forming of a plasma channel between the tool and the workpiece electrodes leading to the melting and evaporation of the material to be removed. EDM is considered especially suitable for machining complex contours with high accuracy, as well as for materials that are not amenable to conventional removal methods. However, several phenomena can arise and adversely affect the surface integrity of EDMed workpieces. These have to be taken into account and studied in order to optimize the process. Recently, artificial neural networks (ANN) have emerged as a novel modeling technique that can provide reliable results and readily, be integrated into several technological areas. In this paper, we use an ANN, namely, the multi-layer perceptron and the back propagation network (BPNN) to predict the mean surface roughness of electro-discharge machined surfaces. The comparison of the derived results with experimental findings demonstrates the promising potential of using back propagation neural networks (BPNNs) for getting a reliable and robust approximation of the Surface Roughness of Electro-discharge Machined Components.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.6 no.2
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• pp.149-158
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• 2005

In this paper, we have designed and implemented a portable e-tongue (electronic tongue) system using MACS (multi array chemical sensor) and PDA. The system embedded in PDA has merits such as comfortable user interface and data transfer by internet from on-site to remote computer. MACS was made up 7 electrodes (${NH_4}^+$, $Na^+$, $Cl^-$, ${NO_3}^-$, $K^+$, $Ca^{2+}$, $Na^+$, pH) and a reference electrode. For learning the system, we adapted the Levenberg-Marquardt algorithm based on the back-propagation, which could iteratively learned the pre-determined standard patterns, in e-tongue system. Conclusionally, the relationship between the standard patterns and unknown pattern can be easily analyzed. The e-tongue was applied to whiskeys and cognac (one high level whisky, one low level whiskey, two cognac) and 2 sample whiskeys for each standard patterns and unknown patterns. The relationship between the standard patterns and unknown patterns can be easily analyzed.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.10a
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• pp.56-56
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• 1999

For advanced TFT-LCD manufacturing processes, dry etching of thin-film layers(a-Si, $SiN_x$, SID & gate electrodes, ITO etc.) is increasingly preferred instead of conventional wet etching processes. To dry etch Al gate electrode which is advantageous for reducing propagation delay time of scan signals, high etch rate, slope angle control, and etch uniformity are required. For the Al gate electrode, some metals such as Ti and Nd are added in Al to prevent hillocks during post-annealing processes in addition to gaining low-resistivity($<10u{\Omega}{\cdot}cm$), high performance to heat tolerance and corrosion tolerance of Al thin films. In the case of AI-Nd alloy films, however, low etch rate and poor selectivity over photoresist are remained as a problem. In this study, to enhance the etch rates together with etch uniformity of AI-Nd alloys, magnetized inductively coupled plasma(MICP) have been used instead of conventional ICP and the effects of various magnets and processes conditions have been studied. MICP was consisted of fourteen pairs of permanent magnets arranged along the inside of chamber wall and also a Helmholtz type axial electromagnets was located outside the chamber. Gas combinations of $Cl_2,{\;}BCl_3$, and HBr were used with pressures between 5mTorr and 30mTorr, rf-bias voltages from -50Vto -200V, and inductive powers from 400W to 800W. In the case of $Cl_2/BCl_3$ plasma chemistry, the etch rate of AI-Nd films and etch selectivity over photoresist increased with $BCl_3$ rich etch chemistries for both with and without the magnets. The highest etch rate of $1,000{\AA}/min$, however, could be obtained with the magnets(both the multi-dipole magnets and the electromagnets). Under an optimized electromagnetic strength, etch uniformity of less than 5% also could be obtained under the above conditions.

• Journal of Biomedical Engineering Research
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• v.30 no.6
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• pp.461-468
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• 2009

Magnetic resonance electrical impedance tomography (MREIT) enables us to perform high-resolution conductivity imaging of an electrically conducting object. Injecting low-frequency current through a pair of surface electrodes, we measure an induced magnetic flux density using an MRI scanner and this requires a sophisticated MR phase imaging method. Applying a conductivity image reconstruction algorithm to measured magnetic flux density data subject to multiple injection currents, we can produce multi-slice cross-sectional conductivity images. When there exists a local region of fat, the well-known chemical shift phenomenon produces misalignments of pixels in MR images. This may result in artifacts in magnetic flux density image and consequently in conductivity image. In this paper, we investigate chemical shift artifact correction in MREIT based on the well-known three-point Dixon technique. The major difference is in the fact that we must focus on the phase image in MREIT. Using three Dixon data sets, we explain how to calculate a magnetic flux density image without chemical shift artifact. We test the correction method through imaging experiments of a cheese phantom and postmortem canine head. Experimental results clearly show that the method effectively eliminates artifacts related with the chemical shift phenomenon in a reconstructed conductivity image.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.167-167
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• 2010

Indium tin oxide (ITO) has been widely used as transparent conductive oxides (TCOs) for transparent electrodes of various optoelectronic devices, such as liquid crystal displays (LCD) and organic light emitting diodes (OLED). However, indium has become increasingly expensive and rare because of its limited resources. In addition, ITO thin films have some problems for OLED and flexible displays, such as imperfect work function, chemical instability, and high deposition temperature. Therefore, multi-component TCO materials have been reported as anode materials. Among the various materials, IZTO thin films have been gained much attention as anode materials due to their high work function, good conductivity, high transparency and low deposition temperature. IZTO thin films with a thickness of 200nm were deposited on Corning glass substrate at different substrate temperature by pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt%, ZnO 15 wt%, SnO2 15 wt%). We investigated the electrical, optical, structural properties of IZTO thin films. As the substrate temperature is increased, the electrical properties of IZTO are improved. All IZTO thin films have good optical properties, which showed an average of transmittance over 80%. These IZTO thin films were used to fabricate organic light emitting diodes (OLEDs) as anode and the device performances studied. As a result, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.