• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1514-1516
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• 1999

This paper covers our efforts to improve the low carrier mobility and light instability of hydrogenated amorphous silicon (a-Si:H) films with microcrystalline silicon $({\mu}c-Si)$ films. We successfully prepared ${\mu}c-Si$ films on $CaF_2$/glass substrate by decomposition of $SiH_4$ in RPCVD system. The $CaF_2$ films on glass served as a seed layer for ${\mu}c-Si$ film growth. The XRD analysis on $CaF_2$/glass illustrated a (111) preferred $CaF_2$ grains with the lattice mismatch less than 5 % of Si. We achieved ${\mu}c-Si$ films with a crystalline volume fraction of 61 %, (111) and (220) crystal orientations. grain size of $706\AA$, activation energy of 0.49 eV, and Photo/dark conductivity ratio of 124. By using a $CaF_2$/glass structure. we were able to achieve an improved ${\mu}c-Si$ films at a low substrate temperature of $300^{\circ}C$.

• Journal of information and communication convergence engineering
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• v.5 no.1
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• pp.42-44
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• 2007

The a-Si:H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si:H TFTs is inverted staggered. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr) $1500{\AA}$ under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these, thin films is formed with a-SiN:H ($2000{\mu}m$), a-Si:H($2000{\mu}m$) and $n^+a-Si:H$ ($500{\mu}m$). We have deposited $n^+a-Si:H$, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the $n^+a-Si:H$ layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFTs decreasing parasitic capacitance of source-drain show drain current of $8{\mu}A$ at 20 gate voltages, $I_{on}/I_{off}$ ratio of ${\sim}10^8$ and $V_{th}$ of 4 volts.

• Plant Biotechnology Reports
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• v.5 no.4
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• pp.323-329
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• 2011

MuSI, a gene that corresponds to a domain that contains the rubber elongation factor (REF), is highly homologous to many stress-related proteins in plants. Since MuSI is up-regulated in the roots of plants treated with cadmium or copper, the involvement of MuSI in cadmium tolerance was investigated in this study. Escherichia coli cells overexpressing MuSI were more resistant to Cd than wild-type cells transfected with vector alone. MuSI transgenic plants were also more resistant to Cd. MuSI transgenic tobacco plants absorbed less Cd than wild-type plants. Cd translocation from roots to shoots was reduced in the transgenic plants, thereby avoiding Cd toxicity. The number of short trichomes in the leaves of wild-type tobacco plants was increased by Cd treatment, while this was unchanged in MuSI transgenic tobacco. These results suggest that MuSI transgenic tobacco plants have enhanced tolerance to Cd via reduced Cd uptake and/or increased Cd immobilization in the roots, resulting in less Cd translocation to the shoots.

• Journal of Powder Materials
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• v.1 no.1
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• pp.42-51
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• 1994

6061Al-SiCP metal matrix composite materials(MMCs) were fabricated by injecting SiCP particles directly into the atomized spray. The main attraction of this technique is the rapid fabrication of semi-finished, composite products in a combined atomization, particulate injection(10 $\mu\textrm{m}$, 40 $\mu\textrm{m}$, SiCP) and deposition operation. Conclusions obtained are as follows; The microstructure of the unreinforced spray formed 6061Al alloy consisted of relatively fine(50 $\mu\textrm{m}$) equiaxed grains. By comparision, the microstructure of the I/M materials was segregated and consisted of relatively coarse(150 $\mu\textrm{m}$) grains. The probability of clustering of SiCP particles in co-sprayed metal matrix composites increased it ceramic particle size(SiCP) was reduced and the volume fraction was held constant. Analysis of overspray powders collected from the spray atomization and deposition experiments indicated that morphology of powders were nearly spherical and degree of powders sphercity was deviated due to composite with SiCp particles. Interfacial bonding between matrix and ceramics was improved by heat treatment and addition of alloying elements(Mg). Maximum hardness values [Hv: 165 kg/mm2 for Al-10 $\mu\textrm{m}$ SiCp Hv--159 kg/mm2 for Al-40 $\mu\textrm{m}$SiCp] were obtained through the solution heat treatment at $530^{\circ}C$ for 2 hrs and aging at $178^{\circ}C$, and there by the resistance were improved.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.125-130
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• 2004

The effect of SiC particle size on the microstructures and mechanical properties of A1$_2$O$_3$-SiC composite was investigated. Two types of SiC powders having average particle sizes of 0.15 ${\mu}{\textrm}{m}$ and 3 ${\mu}{\textrm}{m}$ were used. The grain growth in the specimen containing 0.15 ${\mu}{\textrm}{m}$ SiC was effectively inhibited due to the fine SiC particles. However, after the formation of some abnormal grains, fast and exaggerated grain growth occurred which led to the microstructure of large grains with irregular shape. Fracture strength decreased due to the abnormal large grains. On the other hand, for specimen containing 3 ${\mu}{\textrm}{m}$ SiC showed normal grain growth behavior from initial sintering stage. Large SiC particles, however, effectively inhibited exaggerated grain growth after nucleation of a few abnormal grains. As a consequence, microstructure consisted of homogeneous elongated grains. In the A1$_2$O$_3$-2.5SiC(0.15 ${\mu}{\textrm}{m}$)-2.5SIC(3 ${\mu}{\textrm}{m}$) composite fabricated by mixing the two types of SiC powder, abnormal grain growth occurred. However, the good fracture strength was maintained regardless of microstructural changes in this specimen.

• Journal of Adhesion and Interface
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• v.15 no.4
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• pp.169-173
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• 2014

The effect of filler sizes on the thermal diffusivity of Nylon 66/SiC composites was investigated. By loading 60 vol% of SiC fillers on Nylon 66, the thermal diffusivity of the composites increased more than 10 times than that of unfilled Nylon 66 and the thermal diffusivity of composites with filler sizes of $24{\mu}m$ and $76{\mu}m$ increased to $2.2{\times}10^{-2}cm^2/sec$ and $1.75{\times}10^{-2}cm^2/sec$, respectively. It is speculated that the smaller filler size ($24{\mu}m$) of SiC is more favorable for the formation of thermal conductive path that the larger size ($76{\mu}m$) of filler composites. The thermal diffusivity of Nylon 46/SiC 400 (60 vol%) composites was $1.61{\times}10^{-2}cm^2/sec$ that was lower than that of Nylon 66/SiC (60 vol%) composites.

• Journal of the Microelectronics and Packaging Society
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• v.13 no.1 s.38
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• pp.23-29
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• 2006

Ultrasonic soldering of Si-wafer to FR-4 PCB at ambient temperature was investigated. The UBM of Si-substrate was Cu/ Ni/ Al from top to bottom with thickness of $0.4{\mu}m,\;0.4{\mu}m$, and $0.3{\mu}m$ respectively. The pad on FR-4 PCB comprised of Au/ Ni/ Cu from top to bottom with thickness of $0.05{\mu}m,\;5{\mu}m$, and $18{\mu}m$ respectively. Sn-3.5wt%Ag foil rolled to $100{\mu}m$ was used for solder. The ultrasonic soldering time was varied from 0.5 s to 3.0 s and the ultrasonic power was 1,400 W. The experimental results show that a reliable bond by ultrasonic soldering at ambient temperature was obtained. The shear strength increased with soldering time up to a maximum of 65 N at 2.5 s. The strength decreased to 34 N at 3.0 s because cracks were generated along the intermetallic compound between Si-wafer and Sn-3.5wt%Ag solder. The Intermetallic compound produced by ultrasonic soldering between the Si-wafer and the solder was $(Cu,Ni)_{6}Sn_{5}$.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.31-31
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• 2009

PECVD를 이용하여 제조된 미세결정질 p-i-n 실리콘 박막 태양전지에서, p 층은 태양전지의 윈도우 역할 및 그 위에 증착될 i ${\mu}c-Si:H$ 층의 'seed'층 역할을 수행하기 때문에, p층의 구조적 및 전기적, 광학적 특성은 태양전지의 전체 성능에 큰 영향을 미칠 수 있다. 본 연구에서는 $SiH_4$ 농도를 변화시켜 각기 다른 결정 특성을 갖는 p ${\mu}c-Si:H$층을 제조하고 그 위에 i ${\mu}c-Si:H$ 층을 증착하여 p층의 결정 특성변화와 그에 따른 i ${\mu}c-Si:H$ 층 및 'superstrate' p-i-n 미세결정질 실리콘 박막 태양전지의 특성 변화를 조사하였다. P층의 경우, $SiH_4$ 농도가 증가함에 따라 결정분율 (Xc)이 감소하여 비정질화되었으며 그에 따라 dark conductivity가 감소하는 경향을 나타내었다. 각기 다른 결정분율을 가지는 p 'seed' 층 위에 증착된 태양전지는, p 'seed' 층의 결정분율이 증가함에 따라 개방전압, 곡선인자, 변환효율이 경향적으로 감소하였다. 이는 p 층 결정분율 변화에 따른 p/i 계면특성 저하 및 그 위에 증착되는 i ${\mu}c-Si:H$ 층의 결함밀도 증가 등에 따른 태양전지 특성 감소 때문인 것으로 판단되며, 이를 분석하기 위하여 i ${\mu}c-Si:H$ 층의 전기적, 구조적 특성 분석 및 태양전지의 dark I-V 특성 등을 분석하고자 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.308-308
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• 2012

현재 결정질 태양전지 제작에 있어 공정 단가 및 재료비 절감을 위해 실리콘 웨이퍼의 두께가 점점 얇아지는 추세이며, 이에 따른 장파장 영역 흡수 손실을 감소시키기 위한 방안으로 후면 패시베이션에 관한 연구가 활발히 진행되고 있다. 후면 패시베이션층으로는 SiO2, SiNx, a-Si:H, SiOxNy 등의 물질이 사용되고 있으며, 본 연구에서는 SiO2/SiNx/SiO2 (ONO)의 삼중막 구조를 패시베이션층으로 하여 SiNx 단일막 구조와의 열처리 온도에 따른 소수캐리어 수명(${\tau}eff$), 후면 재결합속도(Seff), 확산거리(LD) 등의 파라미터 변화를 비교하였다. 증착 직후와 $350^{\circ}C$에서의 Forming Gas Annealing (FGA), 그리고 $800^{\circ}C$의 고온에서의 fast firing 후의 각각의 파라미터 변화를 관찰하였다. 증착 직후 SiNx 단일막과 ONO 삼중막의 소수캐리어 수명은 각각 $108{\mu}s$와 $145{\mu}s$를 보였다. 후면 재결합속도는 65 cm/s와 44 cm/s를 보였으며, 확산거리는 각각 $560{\mu}m$와 $640{\mu}m$를 나타내었다. FGA와 firing 열처리 후 세 파마미터는 모두 향상된 값을 보였으며 최종 firing 처리 후 단일막과 삼중막의 소수캐리어 수명은 각각 $196{\mu}s$와 $212{\mu}s$를 보였다. 또한 후면 재결합속도는 28 cm/s와 24 cm/s를 보였으며, 확산거리는 각각 $750{\mu}m$와 $780{\mu}m$를 보여 ONO 삼중막 구조의 경우에서 보다 우수한 특성을 보였다. 본 실험을 통해 SiNx 단일막보다 ONO 패시베이션 구조에서의 열적안정성이 우수함을 확인하였으며, 또한 ONO 패시베이션 구조는 열적 안정성뿐 아니라 n-type 도핑을 위한 Back To Back (BTB) 도핑 공정 시 후면으로 의 도펀트 침투를 막는 차단 층으로서의 역할도 기대할 수 있다.

• Korean Journal of Materials Research
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• v.10 no.2
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• pp.124-127
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• 2000

A new triode type Ti-silicided Si FEA(field emitter array) was realized by Ti-silicidation of Ti coated Si FEA and its field emission properties were investigated. In the fabricated device, the field emission properties through the unit pixel with $200{\mu\textrm{m}}{\times}200{$\mu\textrm{m}}$ tip array in the area of $1000{\mu\textrm{m}}{\times}1000{$\mu\textrm{m}}$ were as follows : the turn-on voltage was about 70V under high vacuum condition of $10^8Torr$, and the field emission current and steady state current degradation were about 2nA/tip and 0.3%/min under the bias of $V_A=500V\;and\;V_G=150V$. The low turn-on voltage and the high current stability during long term operation of the Ti silicided Si FEA were due to the thermal and chemical stability and the low work function of silicide layer formed at the surface of Si tip.