• ETRI Journal
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• 제30권1호
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• pp.33-46
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• 2008

This paper presents the experimental results of a low-power low-cost RF transceiver for the 915 MHz band IEEE 802.15.4b standard. Low power and low cost are achieved by optimizing the transceiver architecture and circuit design techniques. The proposed transceiver shares the analog baseband section for both receive and transmit modes to reduce the silicon area. The RF transceiver consumes 11.2 mA in receive mode and 22.5 mA in transmit mode under a supply voltage of 1.8 V, in which 5 mA of quadrature voltage controlled oscillator is included. The proposed transceiver is implemented in a 0.18 ${\mu}m$ CMOS process and occupies 10 $mm^2$ of silicon area.

• Proceedings of the IEEK Conference
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.765-768
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• 2005

In this paper, high LO-RF isolation 94 GHz MMIC single-balanced mixer was designed and fabricated using a branch line coupler and a ${\lambda}/4$ transmission line. The 94 GHz MMIC single-balanced mixer was designed using the 0.1 ${\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT(MHEMT) diode. The fabricated MHEMT was obtained the cut-off frequency($f_T$) of 189 GHz and the maximum oscillation frequency($f_{max}$) of 334 GHz. The designed MMIC single-balanced mixer was fabricated using 0.1 ${\mu}m$ MHEMT MMIC process. From the measurement, the conversion loss of the single-balanced mixer was 23.1 dB at an LO power of 10 dBm. The LO-RF isolations of single-balanced mixer was obtained 45.5 dB at 94.19 GHz. We obtained in this study a higher LO-RF isolation compared to some other balanced mixers in millimeter-wave frequencies.

• Journal of the Korean Solar Energy Society
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• 제33권2호
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• pp.11-17
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• 2013

Silicon nitride($SiN_x:H$) deposited by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) is commonly used for anti-reflection coating and passivation in crystalline silicon solar cell fabrication. In this paper, characteristics of the deposited silicon nitride was studied with change of working pressure, deposition temperature, gas ratio of $NH_3$ and $SiH_4$, and RF power during deposition. The deposition rate, refractive index and effective lifetime were analyzed. The (100) p-type silicon wafers with one-side polished, $660-690{\mu}m$, and resistivity $1-10{\Omega}{\cdot}cm$ were used. As a result, when the working pressure increased, the deposition rate of SiNx was increased while the effective life time for the $SiN_x$-deposited wafer was decreased. The result regarding deposition temperature, gas ratio and RF power changes would be explained in detail below. In this paper, the optimized condition in silicon nitride deposition for silicon solar cell was obtained as 1.0 Torr for the working pressure, $400^{\circ}C$ for deposition temperature, 500 W for RF power and 0.88 for $NH_3/SiH_4$ gas ratio. The silicon nitride layer deposited in this condition showed the effective life time of > $1400{\mu}s$ and the surface recombination rate of 25 cm/s. The crystalline silicon solar cell fabricated with this SiNx coating showed 18.1% conversion efficiency.

• Korean Journal of Materials Research
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• 제12권1호
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• pp.82-88
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• 2002

Chromium carbide films were deposited on high speed steels using a Cr_3C_2$ target by magnetron sputtering. Effects of the deposition parameters (power, Ar pressure and substrate temperature) on deposition rates and surface roughnesses of the films were investigated. The morphologies of those films were characterized by scanning electron microscopy and atomic force microscopy. The grain size of the samples deposited using dc-power is larger than that using equivalent rf-power. The hardness of the sample increases with increasing rf-power, whereas the elastic modulus nearly does not change with rf-power. The optimum sputter deposition conditions for chromium carbide on high speed steels in the corrosion resistance aspect were found to be the rf-power with small roughness.

• 한국체육학회지인문사회과학편
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• 제55권6호
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• pp.691-700
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• 2016

The purpose of this study was to investigate the effects of long-term endurance exercise or resistance exercise training on muscle anabolic/catabolic pathway. 50wks-old male Wistar rats(n=30) were randomly assigned for 3 groups (sedentary, endurance exercise, resistance exercise group). After 12-week of training, plantaris muscles were dissect to measure protein level. Akt/mTOR signal-related proteins were significantly increased only after resistance exercise training, but catabolic signal-related proteins, FoxO1 and MuRF1, were significantly decreased after resistance and endurance exercise training. After endurance exercise training, AMPK and PGC-1α protein levels were significantly increased. Therefore, the endurance exercise training has been shown to affect the protein balance of aging muscle through inhibition of muscle protein catabolism. The present results suggest the possibility that not only resistance exercise but also endurance exercise will be affectable to keep or increase muscle volume and capacity of middle-aged people.

• ETRI Journal
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• 제21권4호
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• pp.1-8
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• 1999

Thick metal 0.8${\mu}m$ CMOS technology on high resistivity substrate(RF CMOS technology) is demonstrated for the L-band RF IC applications, and we successfully implemented it to the monolithic 900 MHz and 1.9 GHz CMOS LNAs for the first time. To enhance the performance of the RF circuits, MOSFET layout was optimized for high frequency operation and inductor quality was improved by modifying the technology. The fabricated 1.9 GHz LNA shows a gain of 15.2 dB and a NF of 2.8 dB at DC consumption current of 15mA that is an excellent noise performance compared with the offchip matched 1.9 GHz CMOS LNAs. The 900 MHz LNA shows a high gain of 19 dB and NF of 3.2 dB despite of the performance degradation due to the integrating of a 26 nH inductor for input match. The proposed RF CMOS technology is a compatibel process for analog CMOS ICs, and the monolithic LNAs employing the technology show a good and uniform RF performance in a five inch wafer.

• Korean Journal of Clinical Laboratory Science
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• 제55권3호
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• pp.184-194
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• 2023

In this study, we investigated whether p-anisaldehyde (PAA), the main component of essential oils derived from anise seeds, influences the differentiation of mouse C2C12 myoblasts. Cells were induced to differentiate over 5 days using a differentiation medium with or without PAA (50 or 200 mg/mL). Myotube length and diameter were measured, and the expressions of myogenic markers (myoblast determination protein 1, myogenin, myocyte enhancer factor 2, muscle creatine kinase, and myosin heavy chain) and atrophy-related genes (atrogin-1 and muscle ring finger-1 [MuRF-1]) were assessed by quantitative real-time polymerase chain reaction. Additionally, protein kinase B (Akt) phosphorylation was monitored by western blotting. PAA significantly induced the formation of smaller and thinner myotubes and reduced myogenic marker expression. Furthermore, PAA increased the expressions of atrogin-1 and MuRF-1 and simultaneously reduced Akt phosphorylation. Our findings indicate that PAA inhibits the myogenic differentiation of C2C12 cells by reducing the phosphorylation and activation of Akt.

• Journal of Sensor Science and Technology
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• 제6권1호
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• pp.56-62
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• 1997

Using a rf-magnetron sputtering method, highly c-axis oriented La modified $PbTiO_{3}$ (PLT) ferroelectric thin films with compositions of $(Pb_{1-x}La_{x})Ti_{1-x/4}O_{3}$, where x=0.05, x=0 and x=0.15, have been obtained on (100)MgO single crystal substrate under conditions of low gas pressure. The degree of c-axis orientation of PLT films decreases with increasing gas pressure and with increasing La contant. These films were characterized by X-ray diffraction and SEM. PLT thin films of x=0.05, 0.1 and 0.15 show a low dielectric constant of 218, 246 and 361 at 1 kHz and remanent polarization(Pr) of $9{\mu}C/cm^{2}$, $8{\mu}C/cm^{2}$ and $7{\mu}C/cm^{2}$.

• Journal of electromagnetic engineering and science
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• 제14권4호
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• pp.411-414
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• 2014

A switch is one of the most useful circuits for controlling the path of signal transmission. It can be added to digital circuits to create a kind of gate-level device and it can also save information into memory. In RF subsystems, a switch is used in a different way than its general role in digital circuits. The most important characteristic to consider when designing an RF switch is keeping the isolation as high as possible while also keeping insertion loss as low as possible. For high isolation, we propose leakage signal cancellation and inductive switching for designing a singlepole double-throw (SPDT) RF switch. By using the proposed method, an isolation level of more than 23 dB can be achieved. Furthermore, the heterojunction bipolar transistor (HBT) process is used in the RF switch design to keep the insertion loss low. It is demonstrated that the proposed RF switch has an insertion loss of less than 2 dB. The RF switch operates from 1 to 8 GHz based on the $0.18-{\mu}m$ SiGe HBT process, taking up an area of $0.3mm^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• 제40권10호
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• pp.17-23
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• 2003

In this study, microscale, high-performance, solenoid-type RF chip inductors were investigated. The size of the RF chip inductors fabricated in this work was 1.0${\times}$0.5${\times}$0.5㎣. The materials (96% Al2O3) and shape (I-type) of the core were determined by a Maxwell three-dimensional field simulator to maximize the performance of the inductors. The copper (Cu) wire with 40${\mu}{\textrm}{m}$ diameter was used as the coils. High frequency characteristics of the inductance (L), quality-factor (Q), and capacitance (C) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The inductors developed have inductances of 11 to 39 nH and quality factors of 28 to 50 over the frequency ranges of 250MHz to 1 GHz, and show results comparable to those measured for the inductors prepared by CoilCraf $t^{Tm}$ that is one of the best chip inductor company in the world. The simulated data predicted the high-frequency data of the L, Q, and C of the inductors developed well.l.