• Journal of Microbiology and Biotechnology
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• 제33권7호
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• pp.915-925
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• 2023

Sarcopenia is defined as loss of muscle mass and strength due to aging. Recent studies show that sarcopenia may improve via the gut-muscle axis, suggesting that gut health may affect muscle phenotypes. In this study, we aimed to investigate the ability of Lactobacillus rhamnosus JY02 as a probiotic strain isolated from kimchi to alleviate sarcopenia. L. rhamnosus JY02-conditioned medium (CM) reduced dexamethasone (DEX)-induced myotube diameter atrophy and expression of muscle degradation markers (MuRF1 and atrogin-1) in C2C12 cells. The amelioration of sarcopenia was investigated by measuring body composition (lean mass), hand grip strength, myofibril size (using histological analysis), and mRNA and protein expression of muscle-related factors in a DEX-induced mouse model. The results of these analyses showed that L. rhamnosus JY02 supplementation promoted the production of muscle-enhancement markers (MHC Iβ, MHC IIα, and Myo-D) and reduced both the production of muscle degradation markers and the symptoms of muscle atrophy (loss of lean mass and muscle strength). We also found decreased levels of pro-inflammatory cytokines (IL-6, IFN- γ) and increased levels of anti-inflammatory cytokines (IL-10) in the serum of DEX+JY02-administered mice compared to those in DEX-treated mice. Overall, these results suggest that L. rhamnosus JY02 is a potent probiotic supplement that prevents sarcopenia by suppressing muscle atrophy.

• 한국자기학회지
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• 제9권2호
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• pp.111-120
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• 1999

RF-마그네트론 스퍼터법으로 제조된 200~1200$\AA$의 Co82Zr6Mo12박막을 회전자장 중에서 열처리할 때 박막의 미세구조 및 표면형상의 변화에 따른 전자기적 특성을 조사하였다. 박막의 두께가 증가할수록 보자력은 감소하는 경향을 보였으나, 포화자화 값의 변화는 나타나지 않았다. 열처리 온도가 30$0^{\circ}C$까지 증가함에 따라 보자력은 박막내부 잔류응력의 감소 및 표면조도의 감소로 인해 감소하였고, 40$0^{\circ}C$에서는 부분적인 결정립성장에 의해 증가하였다. 포화자화 값은 열처리 온도 20$0^{\circ}C$까지 변화를 보이지 않고, 300 및 40$0^{\circ}C$에서는 7.4kG에서 8.0kG로 증가하였는바, 이는 박막내의 미세 Co입자의 석출 및 성장에 기인하였다. 전기비저항은 열처리 온도가 증가함에 따라 감소하였으며, 자기저항값은 거의 0cm에 가까운 음의 값을 보였다. 주파수 변화에 따른 박막의 유효투자율은 30$0^{\circ}C$ 열처리시 1200으로 최대값을 나타냈다. 이상에서 박막을 실제적인 자기저항 헤드의 바이어스층으로 응용을 고려시, 최적 열처리조건은 400Oe의 회전자장 중 30$0^{\circ}C$에서 1시간 열처리할 때로 나타났다.

• 한국식품위생안전성학회지
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• 제38권2호
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• pp.69-78
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• 2023

본 연구에서는 EMS를 건강기능식품으로 활용하기 위한 기초적인 데이터를 제공하기 위해 EMS가 DEX으로 유도한 근위축 C2C12 모델에서 미치는 보호 효과를 조사하고자 하였다. DEX를 처리한 근위축 모델을 확립하였다. 그리고 DEX으로 유도한 근위축 C2C12 myotube에 24시간 동안 10, 50, 100 ㎍/mL 농도의 EMS를 처리하였으며, C2C12에 EMS와 DEX를 처리하여 XTT 세포독성 테스트와 myotube 형성 효능(myotube diameter와 fusion index) 측정, 단백질 발현량 분석을 수행하였다. 또한, 기능성을 입증받은 SE를 positive control로 사용하였다. EMS의 세포독성 평가 결과, 100 ㎍/mL 농도까지 유의한 독성이 없는 것을 확인하였다. C2C12 myotube에서 EMS는 DEX만 처리한 실험군과 비교하여 모든 농도에서 유의적으로 세포 보호 효능이 있음을 확인하였다. 또한 fusion index와 myotube diameter를 측정하여 DEX만 처리한 실험군과 비교하였을 때, EMS의 myotube 형성 효능을 확인하였다. EMS는 근육세포 분해 관련 단백질인 Fbx32와 MuRF1의 발현을 감소시키고, 그와 반대로 근력 강화 및 합성과 관련된 단백질인 SIRT1과 p-Akt/Akt의 발현은 증가시켰다. 이러한 연구결과는 EMS가 건강기능식품 개발의 성분으로 활용될 수 있으며, in vivo 동물 모델에서도 활용 가능할 것으로 사료된다.

• 마이크로전자및패키징학회지
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• 제13권1호통권38호
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• pp.1-5
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• 2006

반도체 메모리 소자의 스피드 향상을 위해 저저항 배선층을 채용하는 방안으로 70 nm-두께의 아몰퍼스실리콘과 폴리실리콘 기판부에 $TiSi_2$ 타켓으로 각각 80 nm 두께의 TiSix 복합실리콘을 스퍼터링으로 증착한 후 RTA $800^{\circ}C$-20sec 조건으로 실리사이드화 처리하고 사진식각법으로 선폭 $0.5{\mu}m$의 배선층을 만들었다. 배선층에 대해 다시 각각 $750^{\circ}C-3hr,\;850^{\circ}C-3hr$의 부가적인 안정화 열처리를 실시하였으며, 이때의 면저항의 변화는 four-point probe로 실리사이드층의 미세구조와 수직단면 두께 변화를 주사전자현미경과 투과전자현미경으로 관찰하였다. 아몰퍼스실리콘 기판인 경우 후속열처리에 따른 결정화 진행과 함께 급격한 면저항의 증가가 확인되었고, 이 원인은 결정화 과정에서 실리콘과 복합티타늄실리사이드 층과의 상호확산으로 표면 공공(void)을 형성한 것으로 미세구조 관찰에서 확인되었다. 따라서 복합티타늄실리사이드의 하지층의 종류와 열처리 조건을 바꾸어 저저항 또는 고저항 실리사이드를 조절하여 제작하는 것이 가능하여 복합 $TiSi_2$를 저저항 배선층 재료로 채용할 수 있음을 확인하였다.

• 한국진공학회지
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• 제14권4호
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• pp.207-214
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• 2005

본 연구에서는 스위치, 위상변위기, 감쇄기등 전파제어회로를 설계 및 제작할 수 있는 pHEMT스위치 소자에 적합한 에피구조를 설계하였다. 고성능의 스위치 소자를 위한 pHEMT 채널층 구조는 이중 면도핑층을 가지며 사용 중 게이트 전극의 전계강도가 약한 깊은 쪽 채널층의 Si 면농도가 상층부보다 약 1/4정도 낮을 경우 격리도등 우수한 특성을 보였다. 설계된 에피구조와 ETRI의 $0.5\mu$m pHEMT MMIC 공정을 이용하여 2.4GHz 및 5GHz 대역 표준 무선랜 단말기에 활용 가능한 SPDT Tx/Rx MMIC 스위치를 설계 및 제작하였다. 제작된 SPDT형 스위치는 주파수 6.0 GHz, 동작전압 0/-3V에서 삽입손실 0.849 dB, 격리도 32.638 dB, 그리고 반사손실 11.006 dB의 특성을 보였으며, 전력전송능력인 $P\_{1dB}$는 약 25dBm, 그리고 선형성의 척도인 IIP3는 42 dBm 이상으로 평가되었다. 이와 같은 칩의 성능은 본 연구에서 개발된 SPDT 단일고주파집적회로 스위치가 2.4GHz뿐만 아니라 SGHB 대역 무선랜 단말기에 활용이 충분히 가능함을 말해준다.

• 대한본초학회지
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• 제32권3호
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• pp.45-53
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• 2017

Objective : Nelumbo nucifera, its rhizome and semen have been used as a traditional medicine which was studied on antioxidant, hepatoprotective effect, anti-obesity and the others. However, Nelumbinis Flos have not studied. We investigated protective effects on oxidative DNA damage and anti-inflammatory effects of Nelumbinis Flos. Methods : The antioxidant activity was conducted by 1,1-diphenyl-2-picryl hydrazyl (DPPH) radical, 2, 2'-Azino-bis (3-ethylbenzothiazoline-6 sulfonic acid) diammonium salt (ABTS) radical scavenging assay and reducing power assay. Total phenolic content was analyzed. Also, phenolic compounds were detected by HPLC/UV. The inhibitory effect on oxidative DNA damage was determined using ${\Phi}X-174$ RF I plasmid DNA cleavage assay. The anti-inflammatory effect of Nelumbinis Flos was measured by the amount of nitric-oxide (NO) produced and protein levels of iNOS, and COX-2 in LPS induced RAW 264.7 cells. Results : The results of DPPH and ABTS radical scavenging activity at $200{\mu}g/m{\ell}$ of extraction were $97.02{\pm}0.88%$ and $96.42{\pm}0.25%$. Reducing power (fold of L-ascorbic acid as control) was $100.14{\pm}0.31$ at $200{\mu}g/m{\ell}$. Total phenol content was $8.70{\pm}0.02mg/g$. Chlorogenic acid, catechin and epicatechin were found by HPLC. Nelumbinis Flos has inhibitory effect in dose-manner against oxidative DNA damage. In addition, it showed the anti-inflammatory effect by suppression of NO production as well as protein levels of iNOS, and COX-2. Conclusion : This study suggested that Nelumbinis Flos showed potential antioxidant and suppression activities of various factors were related in NO produced. Therefore, Nelumbinis Flos as natural plant resources that may help reduce inflammation and alleviate DNA damage.

• The Korean Journal of Ceramics
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• 제6권2호
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• pp.138-142
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• 2000

Thin film $LiNbO_3$MFS (metal-ferroelectric-semiconductor) capacitor showed improved characteristics such as low interface trap density, low interaction with Si substrate, and large remanent polarization. This paper reports ferroelectric $LiNbO_3$thin films grown directly on p-type Si (100) substrates by 13.56 MHz RF magnetron sputtering system for FRAM (ferroelectric random access memory) applications. RTA (rapid thermal anneal) treatment was performed for as-deposited films in an oxygen atmosphere at $600^{\circ}C$ for 60sec. We learned from X-ray diffraction that the RTA treated films were changed from amorphous to poly-crystalline $LiNbO_3$which exhibited (012), (015), (022), and (023) plane. Low temperature film growth and post RTA treatments improved the leakage current of $LiNbO_3$films while keeping other properties almost as same as high substrate temperature grown samples. The leakage current density of $LiNbO_3$films decreased from $10^{-5}$ to $10^{-7}$A/$\textrm{cm}^2$ after RTA treatment. Breakdown electric field of the films exhibited higher than 500 kV/cm. C-V curves showed the clockwise hysteresis which represents ferroelectric switching characteristics. Calculated dielectric constant of thin film $LiNbO_3$illustrated as high as 27.9. From ferroelectric measurement, the remanent polarization and coercive field were achieved as 1.37 $\muC/\textrm{cm}^2$ and 170 kV/cm, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.235.2-235.2
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• 2015

The front transparent conductive oxide (TCO) films must exhibit good transparency, low resistivity and excellent light scattering properties for high efficiency amorphous silicon (a-Si) thin film solar cells. The light trapping phenomenon is limited due to non-uniform and low aspect ratio of the textured glass [1]. We present the low cost electrochemically deposited uniform zinc oxide (ZnO) nanorods with various aspect ratios for a-Si thin film solar cells. Since the major drawback of the electrochemically deposited ZnO nanorods was the high sheet resistance and low transmittance that was overcome by depositing the RF magnetron sputtered AZO films as a seed layer with various thicknesses [2]. The length and diameters of the ZnO nanorods was controlled by varying the deposition conditions. The length of ZnO nanorods were varied from 400 nm to $2{\mu}m$ while diameter was kept higher than 200 nm to obtain different aspect ratios. The uniform ZnO nanorods showed higher haze ratio as compared to the commercially available FTO films. We also observed that the scattering in the longer wavelength region was favored for the high aspect ratio of ZnO nanorods and much higher aspect ratios degraded the light scattering phenomenon. Therefore, we proposed our low cost and uniform ZnO nanorods for the high efficiency of thin film solar cells.

• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.509-513
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• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it deposited by reactive sputtering and rf magnetron sputtering respectively were analyzed with annealing temperature and time by four point probe SEM and XRD. Under annealing conditions of 100$0^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin-film and the sheet resistivity and the resistivity of Pt thin-film deposited on it were 0.1288 Ω/ and 12.88 $\mu$$\Omega$.cm respectively. We made Pt resistance pattern on SiO$_2$/Si substrate by life-off method and fabricated Pt thin-film type microheater for thermal microsensors by Pt-wire Pt-paste and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$ we estimated TCR(temperature coefficient of resistance) and resistance ratio of thin-film type Pt-RTD(resistance thermometer device). We obtained TCR value of 3927 ppm/$^{\circ}C$ close to the bulk Pt value. Resistance values were varied linearly within the range of the measurement temperature. The thermal characteristics of fabricated thin-films type Pt micorheater were analyzed with Pt-RTD integrated on the same substrate. The heating temperature of Pt microheater could be up to 40$0^{\circ}C$ with 1.5 watts of the heating power.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.1038-1041
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• 2003

In the paper, we investigated silicon surface microstructures formed by reactive ion etching in hollow cathode system. Wet anisotropic chemical etching technique use to form random pyramidal structure on <100> silicon wafers usually is not effective in texturing of low-cost multicrystalline silicon wafers because of random orientation nature, but High density hollow cathode plasma system illustrates high deposition rate, better film crystal structure, improved etching characteristics. The etched silicon surface is covered by columnar microstructures with diameters form 50 to 100nm and depth of about 500nm. We used $SF_{6}$ and $O_{2}$ gases in HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}$ $cm^{-3}$ at a discharge current of 20 mA. Silicon etch rate of 1.3 ${\mu}s/min$. was achieved with $SF_{6}/O_{2}$ plasma conditions of total gas pressure=50 mTorr, gas flow rate=40 sccm, and rf power=200 W. Our experimental results can be used in various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this paper we directed our study to the silicon etching properties such as high etching rate, large area uniformity, low power with the high density plasma.