• Title/Summary/Keyword: Mott-Schottky Plot

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Effects of Mo on the Passive Films Formed on Ni-(15, 30)Cr-5Mo Alloys in pH 8.5 Buffer Solution

  • Jang, Hee-Jin;Kwon, Hyuk-Sang
    • Journal of the Korean Electrochemical Society
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    • v.12 no.3
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    • pp.258-262
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    • 2009
  • The composition and semiconducting properties of the passive films formed on Ni- (15, 30)Cr-5Mo alloys in pH 8.5 buffer solution were examined. The depth concentration profile of passive films formed on Ni-(15, 30)Cr-5Mo in pH 8.5 buffer solution showed that Mo enhances the enrichment of Cr. The Mott-Schottky plot for the passive film on Ni-(15, 30)Cr- 5Mo closely resembled that for the film on Cr, whereas those for the less Cr-enriched film on Mo-free alloys showed similar behavior to that for the film on Ni. The acceptor density was reduced by increasing Cr content in Ni-(15, 30)Cr-(0, 5)Mo alloys, but addition of Mo considerably increased the acceptor density.

Localized Corrosion of Pure Zr and Zircaloy-4

  • Yu, Youngran;Chang, Hyunyoung;Kim, Youngsik
    • Corrosion Science and Technology
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    • v.2 no.6
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    • pp.253-259
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    • 2003
  • Zirconium based alloys have been extensively used as a cladding material for fuel rods in nuclear reactors, due to their low thermal neutron absorption cross-section, excellent corrosion resistance and good mechanical properties at high temperatures. However, a cladding material for fuel rods in nuclear reactors was contact water during long time at high-temperature, so it is necessary to improve the wear and corrosion resistance of the fuel cladding, At ambient environment, there are few data or paper on the characteristic of corrosion in chloride solution and acidic solution. The specimens used in this work are pure Zr and Zircaloy-4. Zircaloy-4 is a specific zirconium-based alloy containing, on a weight percent basis, 1.4% Sn, 0.2% Fe, 0.1% Cr. Pitting corrosion resistance of two alloys by ASTM G48 is higher than that of electrochemical method. Passive film formed on Zircaloy-4 is mainly composed of $ZrO_2$, metallic Sn, and iron species regardless of formation environments. Also, passive film formed on Zr alloys shows n-type semiconductic property on the base of Mott-Schottky plot.

Semiconductor Behavior of Passive Films Formed on Cr with Various Additive Elements

  • Tsuchiya, Hiroaki;Fujimoto, Shinji;Shibata, Toshio
    • Corrosion Science and Technology
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    • v.2 no.1
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    • pp.7-11
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    • 2003
  • Photoelectrochemical response and electrochemical impedance behavior was investigated for passive film formed on sputter-deposited Cr alloy in $0.1kmol{\cdot}m^{-3}$. Photoelectrochemical action spectrum could be separated into two components, which were considered to be derived from $Cr_2O_3$ ($E_g\sim3.6eV$) and $ Cr(OH)_3 $ ($E_g\sim2.5eV$). The band gap energy, $E_g$, of each component was almost constant for various applied potentials. polarization periods and alloying additives. The photoelectrochemical response showed negative photo current for most potentials in the passive region. Therefore, the photo current apparently exhibited p-typesemiconductor behavior. On the other hand, Mort-Schottky plot of the capacitance showed positive slope, which means that passive film formed on Cr alloy has n-type semiconductor property. These apparently conflicting results are rationally explained assuming that the passive film on Cr alloy formed in the acid solution has n-type semiconductor property with a fairly deep donor level in the band gap and forms an accumulation layer in the most of potential region in the passive state.

Effects of Edta on the Electronic Properties of Passive Film Formed on Fe-20Cr In pH 8.5 Buffer Solution

  • Cho, EunAe;Kwon, HyukSang;Bernard, Frederic
    • Corrosion Science and Technology
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    • v.2 no.4
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    • pp.171-177
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    • 2003
  • The electronic properties of the passive film formed on Fe-20Cr ferritic stainless steel in pH 8.5 buffer solution containing 0.05 M EDTA (ethylene diammine tetraacetic acid) were examined by the photocurrent measurements and Mott-Schottky analysis for the film. XPS depth profile for the film demonstrated that Cr content in the outermost layer of the passive film was higher in the solution with EDTA than that in the solution without EDTA, due to selective dissolution of Fe by EDTA. In the solution with EDTA, the passive film showed characteristics of an amorphous or highly disordered n-type semiconductor. The band gap energies of the passive film are estimated to be ~ 3.0 eV, irrespective of film formation potential from 0 to 700 $mV_SCE$ and of presence of EDTA. However, the donor density of the passive film formed in the solution with EDTA is much higher than that formed in the solution without EDTA, due to an increase in oxygen vacancy resulted from the dissolution of Fe-oxide in the outermost layer of the passive film. These results support the proposed model that the passive film formed on Fe-20Cr in pH 8.5 buffer solution mainly consists of Cr-substituted $\gamma$-$Fe_2O_3$.

Photoelectrochemical characterization of surface-modified CuInS2 nanorod arrays prepared via template-assisted growth and transfer

  • Yang, Wooseok;Kim, Jimin;Oh, Yunjung;Moon, Jooho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.401-401
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    • 2016
  • Although vertically aligned one-dimensional (1D) structure has been considered as efficient forms for photoelectrode, development of efficient 1D nanostructured photocathode are still required. In this sense, we recently demonstrated a simple fabrication route for CuInS2 (CIS) nanorod arrays from aqueous solution by template-assisted growth-and-transfer method and their feasibility as a photoelectrode for water splitting. In this study, we further evaluated the photoelectrochemical properties surface-modified CIS nanorod arrays. Surface modification with CdS and ZnS was performed by successive ion layer adsorption and reaction (SILAR) method, which is well known as suitable technique for conformal coating throughout nanoporous structure. With surface modification of CdS and ZnS, both photoelectrochemical performance and stability of CuInS2 nanorod arrays were improved by shifting of the flat-band potential, which was analyzed both onset potential and Mott-schottky plot.

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Photoelectrochemical Water Splitting on a Delafossite CuGaO2 Semiconductor Electrode

  • Lee, Myeongsoon;Kim, Don;Yoon, Yong Tae;Kim, Yeong Il
    • Bulletin of the Korean Chemical Society
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    • v.35 no.11
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    • pp.3261-3266
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    • 2014
  • A pellet of polycrystalline $CuGaO_2$ with a delafossite structure was prepared from $Ga_2O_3$ and CuO by high-temperature solid-state synthesis. The $CuGaO_2$ pellet was a p-type semiconductor for which the electrical conductivity, carrier density, carrier mobility and Seebeck coefficient were $5.34{\times}10^{-2}{\Omega}^{-1}cm^{-1}$, $3.5{\times}10^{20}cm^{-3}$, $9.5{\times}10^{-4}cm^2V^{-1}s^{-1}$ at room temperature, and $+360{\mu}V/K$, respectively. It also exhibited two optical transitions at about 2.7 and 3.6 eV. The photoelectrochemical properties of the $CuGaO_2$ pellet electrode were investigated in aqueous electrolyte solutions. The flat-band potential of this electrode, determined using a Mott-Schottky plot, was +0.18 V vs SCE at pH 4.8 and followed the Nernst equation with respect to pH. Under UV light illumination, a cathodic photocurrent developed, and molecular hydrogen simultaneously evolved on the surface of the electrode due to the direct reduction of water without deposition of any metal catalyst.

Semiconductive Properties of Passivating TiO2 Film as Photoanode (광전극으로서 TiO2 부동태 피막의 반도체 성질에 대한 연구)

  • Kim, Chang-Ha;Pyun, Su-Il
    • Journal of Hydrogen and New Energy
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    • v.1 no.1
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    • pp.48-54
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    • 1989
  • Semiconductive property of the passivating $TiO_2$ film was investigated by measuring the impedance of passivated titanium electrode in a 0.1 N NaOH solution. The passive film was prepared galvanostatically with $10mA/cm^2$ at formation potential of 50 V in a 1 N $H_2SO_4$ solution. The impedance measurement was conducted by superimposing an ac voltage of 5 m V amplitude with the frequency ranging from 5 to 10000 Hz on a dc bias (applied potential). The donor distribution in the film was depicted from the analysis of the non-linear slope of Mott-Schottky plot. The region with nearly constant concentration of donors near the electrolyte/film interface amounts at about 60 percent of the total film thickness and donor concentration increases largely with distance from the surface in an inner region near the film/metal interface. In a region of the film/metal interface the donor concentration showed a frequency dependence greater than in a region of the electrolyte/film interface. The result of donor concentration against frequency suggests a transition from crystalline to amorphous state with distance from the electrolyte/film interface in the passivating $TiO_2$ films. This is also confirmed by the ac conductivity measurement.

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Photoelectrochemical performance of anodized nanoporous iron oxide based on annealing conditions (양극산화로 제조된 다공성 나노구조 철 산화막의 열처리 조건에 따른 광전기화학적 성질)

  • Dongheon Jeong;JeongEun Yoo;Kiyoung Lee
    • Journal of the Korean institute of surface engineering
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    • v.56 no.4
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    • pp.265-272
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    • 2023
  • Photoelectrochemical (PEC) water splitting is one of the promising methods for hydrogen production by solar energy. Iron oxide has been effectively investigated as a photoelectrode material for PEC water splitting due to its intrinsic property such as short minority carrier diffusion length. However, iron oxide has a low PEC efficiency owing to a high recombination rate between photoexcited electrons and holes. In this study, we synthesized nanoporous structured iron oxide by anodization to overcome the drawbacks and to increase surface area. The anodized iron oxide was annealed in Ar atmosphere with different purging times. In conclusion, the highest current density of 0.032 mA/cm2 at 1.23 V vs. RHE was obtained with 60 s of pursing for iron oxide(Fe-60), which was 3 times higher in photocurrent density compared to iron oxide annealed with 600 s of pursing(Fe-600). The resistances and donor densities were also evaluated for all the anodized iron oxide by electrochemical impedance spectra and Mott-Schottky plot analysis.

Effect of Manufacturing Process on Electrochemical Properties of CP-Ti and Ti-6Al-4V Alloys (CP-Ti 및 Ti-6Al-4V 합금의 전기화학적 특성에 미치는 제조공정의 영향)

  • Kim, K.T.;Cho, H.W.;Chang, H.Y.;Kim, Y.S.
    • Corrosion Science and Technology
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    • v.17 no.1
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    • pp.20-29
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    • 2018
  • Ti and its alloys show the excellent corrosion resistance to chloride environments, but they show less corrosion resistance in HCl, $H_2SO_4$, NaOH, $H_3PO_4$, and especially HF environments at high temperature and concentration. In this study, we used the commercially pure titanium and Ti-6Al-4V alloy, and evaluated the effect of the manufacturing process on the electrochemical properties. We used commercial products of rolled and forged materials, and made additive manufactured materials by DMT (Directed Metal Tooling) method. We annealed each specimen at $760^{\circ}C$ for one hour and then air cooled. We performed anodic polarization test, AC impedance measurement, and Mott-Schottky plot to evaluate the electrochemical properties. Despite of the difference of its microstructure of CP-Ti and Ti-6Al-4V alloys by the manufacturing process, the anodic polarization behavior was similar in 20% sulfuric acid. However, the addition of 0.1% hydrofluoric acid degraded the electrochemical properties. Among three kinds of the manufacturing process, the electrochemical properties of additive manufactured CP-Ti, and Ti-6Al-4V alloys were the lowest. It is noted that the test materials showed a Warburg impedance in HF acid environments.