• Journal of Technologic Dentistry
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• v.27 no.1
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• pp.97-104
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• 2005

The effect of Nb on interfacial bonding characteristics of Ni-Cr alloy for porcelain fused to metal crown (PFM) has been studied in order to investigate oxide layer. A specimens, which is 0.8mm in thickness, were fired at 1,000$^{\circ}C$ with four tests such as air, vacuum, air for 5 minutes and vacuum for 5 minutes in order to examine an oxide behavior of alloy surface generated by the adding of Nb to be controlled at a rate of 0, 1, 3 and 5. It observed oxide film form of the fired specimens with optical microscope and scanning electron microscope (SEM), and chemical formation of them with energy disperse X-ray spectroscopy (EDX). The other specimens, which is 2mm in thickness, were fired at 1,000$^{\circ}C$ with air and vacuum in order to analyze the diffusion behaviors of alloy-porcelain interface by X-ray dot mapping. The results of this study were as follows: 1. The observation of microstructure of specimens by SEM showed that the more Nb content is high, the more much intermediate compound of rich Nb is observed. 2. The surface morphology of oxide film is most dense in 3% Nb. The heat treatment in air constitutes denser oxide film than heat treatment under vacuum. 3. The diffusion behavior of oxide layer by X-ray dot mapping showed that Si, Al of porcelain diffuse toward metal.

• Journal of Surface Science and Engineering
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• v.51 no.6
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• pp.381-386
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• 2018

In this study, plasma electrolytic oxidation (PEO) method was used to from anodic oxide films on Al alloy and their resistance and morphological characteristics were investigated as a function of film formation voltage and treatment time. Cross-sectional morphology and composition of the PEO films were analyzed by SEM (Scanning Electron Microscopy) and EDS (Energy Dispersive Spectroscopy). The PEO films showed increased surface roughness and thickness with of film formation voltage and treatment time. The wear resistance was found to be the best for the PEO film formed for 5 min at 500V which is attributed to be denser structure relatively and lower surface roughness.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.746-749
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• 2002

Aluminum oxide thin films were grown on a poly ethylene naphthalate (PEN) substrate at the temperature of 100$^{\circ}C$ using atomic layer deposition method. The film showed very flat morphology and good adhesion to the substrate. The visible spectrum showed higher transmittance in the range from 400 nm to 800 nm than that of PEN. The water vapor transmission value measured with MOCON for 230nm oxide-deposited PEN was 0.62g/$m^2$/day @ 38$^{\circ}C$, while that of PEN substrate was 1.4g/$m^2$/day @ 38$^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.168-175
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• 1992

The surface and interface morphology as well as the sheet resistance, and uniformity of TiSiz film are significantly improved and the lateral titanium silicide growth over the oxide spacer is minimized by the use of ion beam mixing and rapid thermal annealing in nitrogen ambient. In addition, TiSiz film formations on TiISi and TiISiOz system were also studied.

• Korean Journal of Metals and Materials
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• v.46 no.6
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• pp.370-376
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• 2008

The formation of anodic oxide film of titanium (Ti) was studied at a variety of electrolyte concentrations and current density to clarify their effects on morphology, microstructure and composition of Ti oxide layer. For the analysis of the Ti oxide films, a scanning electron microscopy (SEM), X-ray diffractometer (XRD), and X-ray photoelectron spectroscopy (XPS) were used. The results showed that the concentration of phosphoric acid played a crucial role in the crystalline structure of the Ti oxide layer while the current density gave a critical effect on the thickness and diameter of its pore. In particular, the crystalline anatase phase with a thickness larger than $2{\mu}m$, which is quite desirable for a dental implant application, could be readily prepared at the phosphoric acid concentration of 0.5 M and current density higher than $2.0A/dm^2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.7
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• pp.437-442
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• 2018

This work reports the preparation of Al-Ti based oxide thin films and their optical properties. Although the transmittance of a $TiO_2/Al2O_3$ bilayer structure was as high as 90% at wavelengths of 600 nm or larger, the reflectance of the bilayer reached its minimum at wavelengths of around 360 nm. The transmittance of an 89-nm-thick $TiO_2$ thin film rapidly increased and then decreased at a critical wavelength because of destructive interference. The wavelength corresponding to the reflectance minimum increased after an increase in $TiO_2$ film thickness. The smooth surface morphology of the AlTiO thin film was retained up to a film thickness of 65 nm, and the transmittance of the film was inversely proportional to film thickness, in accordance with the general tendency for optical films. The reflectance of the AlTiO film at visible light wavelengths was lower than that of the $TiO_2$ film, which implies that the AlTiO film is suitable for applications as an optical thin film layer in semitransparent solar cells.

• Journal of Applied Reliability
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• v.17 no.1
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• pp.72-77
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• 2017

Purpose: The electrochemical corrosion behavior of tin oxide film coated on PET substrates has been studied under varying concentrations of acrylic acid to investigate possible corrosion in contact with the acidic environment. Method: Potentiodynamic test was performed for a commercial ITO/PET film in 0.1, 0.3, and 0.5 M of acrylic acid. The surface morphology was analyzed by scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS). Results: Potentiodynamic test results showed an increase in Icorr and decrease in Ecorr value with increasing concentration of acid. Microscopic evaluation suggested the presence of certain deep cracks on the surface of the film in addition with a severe acidic attack. Conclusion: Exposure of ITO to acrylic acid resulted in the stress corrosion cracking of ITO film due to the mechanical mismatch between brittle inorganic ITO fim and a compliant organic PET substrate leading to the subsequent failure of the film.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.304.1-304.1
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• 2014

Flat-panel displays have been growing as an essential everyday product in the current information/communication ages in the unprecedented speed. The forward-coming applications require light-weightness, higher speed, higher resolution, and lower power consumption, along with the relevant cost. Such specifications demand for a new concept-based materials and applications, unlike Si-based technologies, such as amorphous Si and polycrystalline Si thin film transistors. Since the introduction of the first concept on the oxide-based thin film transistors by Hosono et al., amorphous oxide thin film transistors have been gaining academic/industrial interest, owing to the facile synthesis and reproducible processing despite of a couple of shortcomings. The current work places its main emphasis on the binary oxides composed of ZnO and SnO2. RF sputtering was applied to the fabrication of amorphous oxide thin film devices, in the form of bottom-gated structures involving highly-doped Si wafers as gate materials and thermal oxide (SiO2) as gate dielectrics. The physical/chemical features were characterized using atomic force microscopy for surface morphology, spectroscopic ellipsometry for optical parameters, X-ray diffraction for crystallinity, and X-ray photoelectron spectroscopy for identification of chemical states. The combined characterizations on Zn-Sn-O thin films are discussed in comparison with the device performance based on thin film transistors involving Zn-Sn-O thin films as channel materials, with the aim to optimizing high-performance thin film transistors.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.379-382
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• 2006

In this study, an attempt was made to form magnesium oxide layer via aqueous solution route of salt precipitation process. A layer with flake morphology was formed from the process and various dopants were added during the forming process. The films formed were characterized using SEM, XRD, and cathodoluminescence measurement. In addition, the discharge characteristics were evaluated using panel tests. The results indicate that MgO film can be formed via the aqueous solution process successfully, of which characteristics are comparable to those of MgO film formed by e-beam evaporation process.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.4-4
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• 2011

Extensive research efforts are directed toward the development of highly sensitive gas sensors using novel nanostructured materials. Among the different strategies for producing sensor devices based on nanosized building blocks, polymeric fiber templating approach which is combined by chemical and physical synthesis routes was attracted much attention. This unique morphology increases the surface area and reduces the interfacial area between film and substrate. Consequently, the surface activity is markedly enhanced while deleterious interfacial effects between film and substrate are significantly reduced. Both effects are highly advantageous for gas sensing applications. In this presentation, facile synthesis of hollow and porous metal oxide nanostructures and their applications in chemical sensors will be discussed.