• Proceedings of the IEEK Conference
• /
• 1999.11a
• /
• pp.187-190
• /
• 1999

We have developed fabrication processes that form a wide-head T-gate with a 0.2 ${\mu}{\textrm}{m}$ gate length using the combination of thickness of each PMMA layer, line doses and development times for applications in millimeter- and micro-waves monolithic integrated circuits. The three-layer resist structure (PMMA/P(MMA-MAA)/PMMA = 1800 $\AA$/5800 A/1900$\AA$), 4nC/cm and over development were used for fabrication of a wide-head T-gate by the conventional double E-beam exposure technology. The experimented results show that the cross sectional area of T-gate fabricated by the proposed method is easily enlarged without additional processes.

• Archives of Pharmacal Research
• /
• v.12 no.3
• /
• pp.191-195
• /
• 1989

The release of progesterone from monolithic devices composed of different ratios of polyethylene oxide (PEO; mw 20, 000) and hydrophobic polydimethylsiloxane was investigated. Water soluble PEO soaked into the polymer provided controlled release of progesterone. The release rate of progesterone could be controlled by varying the contents of PEO and progesterone in soaking solution. The progesterone release rate from silicone devices increased as the content of PEO in devices increased, while it decreased as the content of PEO in soaking solution increased. The release rate may be made by simple alterations of geometry of devices controlled swelling and the change in the physical structure of polymer network. Hydrophobic polydimethylsiloxane containing PEO and progesterone can provide a contraceptive material for prolonged release of progesterone.

• Journal of the Institute of Electronics Engineers of Korea SC
• /
• v.43 no.6 s.312
• /
• pp.48-60
• /
• 2006

This paper presents three PWM modulators using CMOS OTAs. They consist of a ramp integrator and current-tunable Schmitt triggers. Prototype circuits built using discrete components exhibited that their duty cycles are linearly controllable. The proposed modulators can be easily fabricated in a monolithic IC, because they have a simple structure.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2003.11a
• /
• pp.630-637
• /
• 2003

In this paper, a DBM(double balanced mixer) of 2 GHz is implemented on FR4(h=1.6mm, ${\epsilon}_r=4.6$) substrate. The structure of double balanced mixer requires, in general, two talons and a quad diode. For balun, a novel planar balun using microstrip to CPS(Coplanar Strip) is suggested and designed. The suggested balun shows the phase imbalance of $180^{\circ}{\pm}1.5^{\circ}$ and the amplitude imbalance of ${\pm}0.2 dB$ for 1.5 to 2.5 GHz. Using the balun, DBM is successfully implemented, and the measured conversion loss of up/down converter show about 6 dB over the bandwidth. The balun may be applicable for MMIC(Monolithic Microwave Integrated Circuit) DBM with the process supporting backside via though more study.

• 한국정보통신설비학회:학술대회논문집
• /
• 2006.08a
• /
• pp.19-23
• /
• 2006

Latching optical switches and optical logic gates AND and OR are demonstrated, for the first time, by the monolithic integration of a vertical cavity lasers with depleted optical thyristor structure, which have not only a low threshold current with 0.65 mA. but also a high on/off contrast ratio more than 50 dB. By simple operating technique with changing a reference switching voltage, this single device operates as two logic functions, optical logic AND and OR. The thyristor laser fabricated using the oxidation process achieved a high optical output power efficiency and a high sensitivity to the optical input light.

• Journal of the korean Society of Automotive Engineers
• /
• v.11 no.2
• /
• pp.41-54
• /
• 1989

In this study, steady state heat conduction problems of the cylinder block of turbocharged gasoline engine were solved by the boundary element method. Surface of the cylinder block was divided by the triangular cells with constant potential. Temperature distribution, effective heat transfer coefficient of the cylinder block were investigated with variation of equivalence ratio, engine speed and boost pressure. The results show that maximum temperature of cylinder block increase rapidly with increasing engine speed and boost pressure. The monolithic structure of cylinder block results in sever inhomogeneity of inner wall temperature at the high engine speed and boost pressure.

• Solar Energy
• /
• v.18 no.3
• /
• pp.137-146
• /
• 1998

In this paper, the current status of manufacturing technologies for GaAs/Si solar cell were revived and provied new MOCVD. In the manufacturing process of GaAs/Si solar cells and an experiment to get the high efficiency GaAs solar cells, we must investigate the optimum growth conditions to get high quality GaAs films on Si substrates by MOCVD. The GaAs on Si substrates has been recognized as a lightweight alternative to pure substrate for space applicaton. Because its density is less the half of GaAs or Ge.So GaAs/Si has twofold weight advantage to GaAs monolithic cell. The theoretical conversion efficiecy limit of tandem GaAs/Si solar cell is 32% under AM 0 and $25^{\circ}C$ condition. It was concluded that the development of cost effective MOCVD technologies shoud be ahead GaAs solar cells for achived move high efficiency III-V solar cells involving tandem structure.

• Korean Journal of Optics and Photonics
• /
• v.8 no.6
• /
• pp.506-509
• /
• 1997

A novel narrowband wavelength bandpass filter with a large side-lobe suppression was proposed in vertical coupler structure using coupling variation in propagation direction. Combination of a half sinusoidal distributed and a slow coupling schmes was used for narrow bandwidth and small side-lobes. Simulation showed 1.5 nm passband at 1.5507 $\mu\textrm{m}$ and the side-lobes were suppressed more than 20 dB which is two times larger than that of a constant coupling filter. A monolithic two-channel wavelength demultiplexer was proposed and theoretically investigated.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2002.04b
• /
• pp.11-11
• /
• 2002

Plastic deformation was observed by TEM around the intragranular SiC particles in the $Al_2O_3$ matrix for $Al_2O_3/SiC$ nanocomposite system. The dislocations are generated at selected planes and there is a tendency for the dislocations to form a subgrain boundary structure with low-angel grain boundaries and networks. In this study, dislocation generated in the $Al_2O_3$ matrix during cooling down from sintering temperatures by the highly localized thermal stresses within and/or around SiC particles caused from the thermal expansion mismatch between $Al_2O_3$ matrix and SiC particle was observed. In monolithic $Al_2O_3$ and $Al_2O_3/SiC$ microcomposite system. These phenomena is closely related to the plastic relaxation of the elastic stress and strain energy associated with both thermal misfitting inclusions and creep behaviors. The plastic relaxation behavior was explained by combination of yield stress and internal stress.

• Journal of Electrical Engineering and information Science
• /
• v.2 no.6
• /
• pp.171-176
• /
• 1997

A hair-pin shaped microstrip-line resonator and dielectric resonator for injection-locked oscillators have been designed and fabricated for the comparative studying of their performances. In general, a commonly used dielectric resonator shows lower phase noise value than hair-pin resonator in the free-running mode. In the injection-locked mode, however, a hair-pin resonator is superior to the dielectric resonator, the wider tuning range, the 22% improved locking bandwidth, the lower noise effect, the short term stability, and the higher power level. The planar structure of a hair-pin shaped microstrip-line resonator will be easily applied to monolithic microwave integrated circuits.