• Title/Summary/Keyword: Monocrystalline

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Melt-Crystal Interface Shape Formation by Crystal Growth Rate and Defect Optimization in Single Crystal Silicon Ingot (단결정 실리콘 잉곳 결정성장 속도에 따른 고-액 경계면 형성 및 Defect 최적화)

  • Jeon, Hye Jun;Park, Ju Hong;Artemyev, Vladimir;Jung, Jae Hak
    • Current Photovoltaic Research
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    • v.8 no.1
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    • pp.17-26
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    • 2020
  • It is clear that monocrystalline Silicon (Si) ingots are the key raw material for semiconductors devices. In the present industries markets, most of monocrystalline Silicon (Si) ingots are made by Czochralski Process due to their advantages with low production cost and the big crystal diameters in comparison with other manufacturing process such as Float-Zone technique. However, the disadvantage of Czochralski Process is the presence of impurities such as oxygen or carbon from the quartz and graphite crucible which later will resulted in defects and then lowering the efficiency of Si wafer. The heat transfer plays an important role in the formation of Si ingots. However, the heat transfer generates convection in Si molten state which induces the defects in Si crystal. In this study, a crystal growth simulation software was used to optimize the Si crystal growth process. The furnace and system design were modified. The results showed the melt-crystal interface shape can affect the Si crystal growth rate and defect points. In this study, the defect points and desired interface shape were controlled by specific crystal growth rate condition.

Shear bond strength of ceramic brackets bonded with antimicrobial monomer-containing self-etching primer (항미생물제제를 포함한 self-etching primer로 접착한 세라믹 브라켓의 전단 결합 강도)

  • Kwon, Tae-Hun;Kang, Jang-Mi;Chang, Na-Young;Kang, Kyung-Hwa
    • The korean journal of orthodontics
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    • v.41 no.1
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    • pp.16-24
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    • 2011
  • Objective: The purpose of this study was to determine (1) the shear bond strength (SBS) of an antimicrobial monomer-containing self-etching primer according to ceramic bracket types and (2) the bracket-adhesive failure mode using an adhesive remnant index (ARI). Methods: A total of 90 extracted human teeth were randomly divided into 6 groups. Each group consisted of one of two ceramic brackets (monocrystalline, polycrystalline) and one of three primers (Transbond XT primer, Transbond Plus SEP, Clearfil Protect Bond) with each group containing 15 specimens. The SBS was measured, and adhesive residues left on the tooth surface were assessed. Results: The SBS of polycrystalline ceramic bracket groups was Significantly higher than that of the monocrystalline ceramic bracket groups (p < 0.001). The SBS of Transbond XT primer groups was significantly higher than those of Transbond Plus SEP groups and Clearfil Protect Bond groups (p < 0.001). All the groups showed bonding failures between the bracket base and adhesive. Conclusions: The combination of a self-etching primer with a monocrystalline bracket is recommended for clinical use, considering its acceptable SBS and mode of failure.

Frictional resistance of different ceramic brackets and their relationship to the second order angulation between bracket slot and wire (세라믹 브라켓의 종류 및 브라켓 슬롯과 와이어 각도에 따른 마찰 저항 차이)

  • Choi, Yoon-Jeong;Park, Young-Chel
    • The korean journal of orthodontics
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    • v.36 no.3 s.116
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    • pp.207-217
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    • 2006
  • Although ceramic brackets have been used widely for improved esthetics during treatment, ceramic brackets have some inherent problems; brittleness, attrition of the opposing teeth and high frictional resistance. This study was performed to understand the frictional resistance of the ceramic brackets, as well as to be a helpful reference for finding the solutions to the problem of frictional resistance. Three different kinds of brackets were used; metal bracket, polycrystalline ceramic brackets with a metal slot to reduce the high frictional resistance and monocrystalline ceramic brackets. The brackets were tested with a $.019{\times}.025$ stainless steel wire with a second order angulation of $0^{\circ}\;and\;10^{\circ}$, and the static and kinetic frictional forces were measured on the universal testing machine. The results of this study showed that the ceramic brackets, especially the monocrystalline ceramic bracket without a metal slot, generated higher frictional resistance than the metal bracket, and the frictional resistance was increased as the angulation between the bracket slot and the wire increased. Therefore, the development of the ceramic bracket with reduced frictional resistance and the prevention of excessive crown tipping during orthodontic treatment will lead to the simultaneous attainment of more efficient and improved esthetic treatment goals.

Analysis on Bowing and Formation of Al Doped P+ Layer by Changes of Thickness of N-type Wafer and Amount of Al Paste (N타입 결정질 실리콘 웨이퍼 두께 및 알루미늄 페이스트 도포량 변화에 따른 Bowing 및 Al doped p+ layer 형성 분석)

  • Park, Tae Jun;Byun, Jong Min;Kim, Young Do
    • Korean Journal of Materials Research
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    • v.25 no.1
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    • pp.16-20
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    • 2015
  • In this study, in order to improve the efficiency of n-type monocrystalline solar cells with an Alu-cell structure, we investigate the effect of the amount of Al paste in thin n-type monocrystalline wafers with thicknesses of $120{\mu}m$, $130{\mu}m$, $140{\mu}m$. Formation of the Al doped $p^+$ layer and wafer bowing occurred from the formation process of the Al back electrode was analyzed. Changing the amount of Al paste increased the thickness of the Al doped $p^+$ layer, and sheet resistivity decreased; however, wafer bowing increased due to the thermal expansion coefficient between the Al paste and the c-Si wafer. With the application of $5.34mg/cm^2$ of Al paste, wafer bowing in a thickness of $140{\mu}m$ reached a maximum of 2.9 mm and wafer bowing in a thickness of $120{\mu}m$ reached a maximum of 4 mm. The study's results suggest that when considering uniformity and thickness of an Al doped $p^+$ layer, sheet resistivity, and wafer bowing, the appropriate amount of Al paste for formation of the Al back electrode is $4.72mg/cm^2$ in a wafer with a thickness of $120{\mu}m$.

Enhancement of Wear and Corrosion Resistances of Monocrystalline Silicon Wafer (단결정 실리콘 웨이퍼의 내마모성 및 내식성 향상을 관한 연구)

  • Urmanov, B.;Ro, J.S.;Pyun, Y.S.;Amanov, A.
    • Tribology and Lubricants
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    • v.35 no.3
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    • pp.176-182
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    • 2019
  • The primary objective of this study is to treat a monocrystalline silicon (Si) wafer having a thickness of $279{\mu}m$ by employing the ultrasonic nanocrystal surface modification (UNSM) technology for improving the efficiency and service life of nano-electromechanical systems (NEMSs) and micro-electromechanical systems (MEMSs) by enhancing of wear and corrosion resistances. The wear and corrosion resistances of the Si wafer were systematically investigated before and after UNSM treatment, wherein abrasive, oxidative and spalling wear mechanisms were applied to the as-received and subsequently UNSM-treated Si wafer. Compared to the asreceived state, the wear and corrosion resistances of the UNSM-treated Si wafer are found to be enhanced by about 23% and 14%, respectively. The enhancement in wear and corrosion resistances after UNSM treatment may be attributed to grain size refinement (confirmed by Raman spectroscopy) and modified surface integrity. Furthermore, it is observed that the Raman intensity reduced significantly after UNSM treatment, whereas neither the Raman shift nor new phases were found on the surface of the UNSM-treated Si wafer. In addition, the friction coefficient values of the as-received and UNSM-treated Si wafers are found to be about 0.54 and 0.39, respectively. Hence, UNSM technology can be effectively incorporated as an alternative mechanical surface treatment for NEMSs and MEMSs comprising Si wafers.

High performance light trapping structure for Monocrystalline Si Solar Cell (단결정 실리콘 태양전지를 위한 고성능 광구조 연구)

  • Chang, Hyo-Sik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.274-274
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    • 2009
  • 고효율 결정질 실리콘 태양전지 구조를 갖기 위해서는 기본적으로 광포획 기능이 고려된 기판이 고려되어야 한다. 본 실험에서는 2-step 습식공정을 이용하여 기판의 반사율을 기존 대비 절반 이하로까지 줄일 수 있는 저반사율을 갖는 표면구조를 얻을 수 있었다. 일반적인 텍스처링 공정을 NaOH와 TMAH등을 이용하여 10um이하의 피라미드 구조를 통해 평균반사율을 10~13%수준을 얻었고, metal assist etching을 이용하여 추가적인 나노 텍스처링을 적용하였다. 전체적인 2-step에칭을 적용하여 평균 반사율을 5%이하까지 줄일 수 있었다. 이는 전반적으로 나노구조 형성으로 인하여 단파장쪽의 반사율이 적게 나오고 IR 파장쪽의 반사율도 같이 낮아짐으로써 저반사율이 달성되었다. 2-step을 이용한 나노 텍스처링 공정 최적화와 반사방지막을 증착하여 이에 대한 효과를 연구하였다.

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Surface Wheel Pattern Analysis and Grinding Process Parameters of Silicon (반도체 실리콘재료의 정밀연삭을 위한 공정변수와 연삭후 표면에 형성된 wheel pattern과의 관계)

  • Oh, Han-Seog;Park, Sung-Eun;Lee, Hong-Lim
    • Journal of the Korean Society for Precision Engineering
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    • v.19 no.2
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    • pp.187-194
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    • 2002
  • For the fine grinding process development of semiconductor monocrystalline silicon, wheel rotational speed, chuck rotational speed, feed rate and hysteresis force were controlled. Magic mirror system was used for grinding wheel pattern analysis. Curvature of wheel pattern was measured by fitting equation. The modeling of surface wheel pattern was related to wheel and chuck rotational speed. The calculated curvature of the model was well matched with the measured curvature. The statistical analysis indicated wheel and chuck rotational speed were significantly effective on.

A Study on Adhesion in Diamond Nanoimprint Lithography Using Molecular Dynamics Simulation (분자동역학 시뮬레이션을 이용한 다이아몬드 나노임프린트 리소그라피에서의 점착에 관한 연구)

  • Kim Kwang-Seop;Kang Ji-Hoon;Kim Kyung-Woong
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 2004.11a
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    • pp.83-89
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    • 2004
  • In this paper, molecular dynamics simulations are performed to analyze the adhesion between a diamond mould and a copper substrate in diamond nanoimprint lithography. The diamond nanoimprint lithography process is simplified as punch-type nanoindentation. The copper substrates are assumed to monocrystalline and defect free and consist of $22500\~80000$ atoms depending on their dimension. The diamond moulds consist of 916 or 2414 atoms, which is assumed to be rigid. The consistent results lot the maximum normal force and the adhesion force are obtained regardless of the size of substrates and the adhesion hysteresis is shown in all cases. It is found that the friction acting on the sidewalls of the mould affects the adhesion significantly when the mould is released from the substrate.

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