• Resources Recycling
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• v.31 no.1
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• pp.29-36
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• 2022

The hydrogen reduction behavior of molybdenum oxides was studied using a horizontal-tube reactor. Reduction was carried out in two stages: MoO₃ → MoO₂ and MoO₂ → Mo. In the first stage, a mixed gas composed of 30 vol% H₂ and 70 vol% Ar was selected for the MoO₃ reduction because of its highly exothermic reaction. The temperature ranged from 550 to 600 ℃, and the residence time ranged from 30 to 150 min. In the second step, pure H₂ gas was used for the MoO₂ reduction, and the temperature and residence time ranges were 700-750 ℃ and 30-150 min, respectively. The hydrogen reduction behavior of molybdenum oxides was found to be somewhat different between the two stages. For the first stage, a temperature dependence of the reaction rate was observed, and the best curve fittings were obtained with a surface reaction control mechanism, despite the presence of intermediate oxides under the conditions of this study. Based on this mechanism, the activation energy and pre-exponential were calculated as 85.0 kJ/mol and 9.18 × 10⁷, respectively. In addition, the pore size within a particle increases with the temperature and residence time. In the second stage, a temperature dependence of the reaction rate was also observed; however, the surface reaction control mechanism fit only the early part, which can be ascribed to the degradation of the oxide crystals by a volume change as the MoO₂ → Mo phase transformation proceeded in the later part.

• Journal of Korea Foundry Society
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• v.20 no.4
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• pp.240-246
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• 2000

Surface layer properties such as composition, phase, hardness, and oxide layer condition are very important if the main failure mechanism of metals is wear. Generally, stable and dense oxide layers are known to decrease the wear rate of metals by prohibition of metallic junction occurred between bare metals. Addition of Si above 4 wt% to DCI(Ductile Cast Iron) is reported to enhance the significant oxidation resistance by forming the silicon-rich surface layer which inhibits further oxidation. And addition of up to 2 wt% Mo to high Si ductile iron produces significant increases in high temperature tensile strength, creep strength, thermal fatigue resistance and oxidation resistance. High pressure wear characteristics of unalloyed DCI(Ductile cast Iron), 4.46 wt% Si ductile iron, 4.3 wt% Si-0.52 wt% Mo ductile iron were investigated through unlubricated pin-on-disc wear test. Wear test was carried out at speed of 23m/min, under pressure of 3 MPa and 3.3 MPa. Wear surfaces of each specimen were observed by SEM to determine the wear mechanism under high pressure wear condition. Addition of Si 4.46 wt% severely deteriorated wear property of ductile iron compared to unalloyed DCI. But combined addition of Si 4.3 wt%andMo0.52wt%decreasedthefrictioncoefficient(${\mu}$)ofductileironsandremarkablydelayedthemild-severeweartransition.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.282.1-282.1
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• 2016

The remarkable physical properties of two-dimensional (2D) semiconducting materials such as molybdenum disulfide ($MoS_2$) and tungsten disulfide ($WS_2$) etc. have attracted considerable attentions for future high-performance electronic and optoelectronic devices. The ongoing studies of $MoS_2$ based nonvolatile memories have been demonstrated by worldwide researchers. The opening hysteresis in transfer characteristics have been revealed by different charge confining layer, for instance, few-layer graphene, $MoS_2$, metallic nanocrystal, hafnium oxide, and guanine. However, limited works built their nonvolatile memories using entirely of assembled 2D crystals. This is important in aspect view of large-scale manufacture and vertical integration for future memory device engineering. We report $WS_2$ based nonvolatile memories utilizing functional van der Waals heterostructure in which multi-layered graphene is encapsulated between $SiO_2$ and hexagonal boron nitride (hBN). We experimentally observed that, large memory window (20 V) allows to reveal high on-/off-state ratio (>$10^3$). Moreover, the devices manifest perfect retention of 13% charge loss after 10 years due to large graphene/hBN barrier height. Interestingly, the performance of our memories is drastically better than ever published work related to $MoS_2$ and black phosphorus flash memory technology.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.735-738
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• 2000

The characteristics of wire electrical discharge machining (WEDM) are governed by many factors such as the power supply type, operating condition and electrode material. This work deals with the effect of wire electrode materials on the machining characteristics such as, metal removal rate, surface characteristics and surface roughness during WEDM A wire's thermal physical properties are melting point, electrical conductivity and vapor pressure. One of the desired qualities of wire is a low melting point and high vapor pressure to help expel the contaminants from the gap. They are determined by the mix of alloying elements (in the case of plain brass and coated wire) or the base core material(i.e. molybdenum). Experiments have been conducted regarding the choice of suitable wire electrode materials and influence of the properties of these materials on the machinability and surface characteristics in WEDM, the experimental results are presented and discussed from their metallurgical aspect. And the coating effect of various alloying elements(Au, Ag, Cu, Zn, Cr, Mn, etc.) to the Cu or 65-35 brass core on them was reviewed also. The removal rate of some coated wires are higher than that of 65-35 brass electrode wire because the wire is difficult to break due to the wire cooling effect of Zn evaporation latent heat and the Zn oxide on the surface is effective in preventing short circuit. The removal rate increases with increasing Zn content from 35, 40 and Zn coated wire

• Journal of Surface Science and Engineering
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• v.44 no.6
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• pp.269-276
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• 2011

Phase evolution and tribological behavior of Cr-Mo-N multi compositional films with different interlayer were investigated. The films were deposited by hybrid PVD (Physical Vapor Deposition) system consisted of dc unbalanced magnetron (UBM) sputtering and arc ion plating (AIP) sources. A pure molybdenum (Mo) was used as sputtering target and also a pure Cr was used as AIP target to form the Cr-Mo-N films. Various growth planes were found, no textured surface, in all of the multi composition films. Maximum value of microhardness was measured in Cr-Mo-N film with Mo interlayer as 29 GPa. Composition film was mainly showed the aspect of the adhesive wear than CrN film. The friction coefficient was decreased from 0.6 for pure CrN coating to 0.35 for Cr-Mo-N film with Mo interlayer. This result may come from the formation of metal oxide tribo-layer which is known as solid lubricant during the wear test.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.145-145
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• 2017

음극재에 사용되는 타이타니아 나노튜브($TiO_2$ nanotubes)는 높은 종횡비를 가지고 있으며, 기계적인 강도가 우수하고 화학적인 안정성이 높다. 그러나 낮은 전기전도도와 상대적으로 넓은 밴드갭(bandgap)은 다양한 활용 분야에 이 물질이 활용되는 것을 제한하고 있는 상황이다. 전기 화학적 분야에서 광화학 반응 또는 과전압에서 밴드갭을 줄이기 위한 타이타니아 나노튜브의 나노 구조 변형에 대한 많은 연구가 있어왔다. 본 연구에서는 산화 몰리브덴(Molybdenum oxide)을 촉매로 사용하여 타이타니아 나노튜브에 전기충격법을 이용하여 도핑했다. 생성된 타이타니아 나노튜브를 $450^{\circ}C$에서 1시간 30분 동안 가열하여 타이타니아 나노구조를 아나타제(anatase) 구조로 변형켰다. 타이타니아 나노튜브의 구조적인 변화를 scanning electron microscopy(SEM), energy-dispersive X-ray spectroscopy(EDS) 등을 통해 측정했고 UV-Visiblespectroscopy를 통해 도핑된 타이타니아 나노튜브의 밴드갭을 측정하였다. 몰리브덴이 도핑된 타이타니아 나노튜브는 기존의 타이타니아 나노튜브가 가지는 밴드갭인 3.0 ~ 3.2eV 범위보다 더 낮아진 2.6 ~ 2.8eV의 범위를 가지는 것을 확인하였다. 몰리브덴이 도핑된 타이타니아 나노튜브는 다양한 광촉매 분야에 적용될 수 있을 것으로 예상된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.168-168
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• 2012

본 연구에서는 Molybdenum oxide (MoOx)-doped 4,4',4"-tris[2-naphthyl(amino)] triphenylamine(2-TNATA)의 P-doping에 의한 hole ohmic contact과 fullerene (C60)/lithium (LiF)의 electron ohmic contact에 의한 All Ohmic contact를 이용한 유기 발광 다이오드 (OLEDs)의 광저항 특성의 향상을 설명한다. 이 소자의 성능은 MoOx-doped 2-TNATA의 두께와 도핑농도에 큰 영향을 받는다. glass/ITO/MoOx-doped 2-TNATA (100 nm)/Al 구조의 소자에서 MoOx-doped 2-TNATA 도핑 농도가 25%에서 75%로 증가할수록 hole only device의 hole ohmic 특성이 향상됐다. 그 이유는 p-type doping effect 때문이다. 또한 photoemission spectra 분석결과, p-type doping effect는 hole-injecting barrier 높이는 낮추고, hole conductivity는 향상되었다. 이것은 2-TNATA에 도핑된 MoOx의 전하전송 콤플렉스의 형성으로 hole carrier의 수가 증가하여 발생되었다. MoOx-doped 2-TNATA의 hole ohmic contact과 fullerene (C60)/lithium fluoride (LiF)의 electron ohmic contact 으로 구성된 glass/ITO/MoOx-doped 2-TNATA (75%, 60 nm)/NPB (10 nm)/Alq3 (35 nm)/C60 (5 nm)/LiF (1 nm)/Al (150 nm)의 소자구조는 6,4V에서 127,600 cd/m2 최대 휘도와 약 1,000 cd/m2에서 4.7 lm/W의 높은 전력 효율을 보여준다.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1329-1330
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• 2006

The effect of Cu on the hydrogen reduction of $MoO_3$ powders was investigated by measuring the humidity change during a non-isothermal process of hydrogen reduction. The presence of Cu induced a shift in the reduction temperature and strongly affected the reduction processes of $MoO_3\rightarrowMo_4O_{11}\rightarrowMoO_2$, which comprised the contained chemical vapor transport of $MoO_x(OH)_2$. This study suggests that the surface of the Cu grains acts as a nucleation site for the reduction of $MoO_x(OH)_2$ to $MoO_2$ particles from $MoO_3$ or $Mo_4O_{11}$. Such an activated reduction process results in the deposition of Mo and $MoO_2$ particles on the surface of the Cu.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1327-1328
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• 2006

Lanthanum oxide was introduced to molybdenum powder by liquid-liquid doping and liquid-solid doping respectively. Mo alloys were prepared by powder metallurgy technology. The size distribution and feature of dopant particles and the fractographs of Mo alloys were investigated by TEM and SEM respectively. The results indicated that liquid-liquid doping method is favorable for refining and dispersing $La_2O_3$ particles uniformly in matrix. Fracture toughness of Mo alloys prepared by liquid-liquid doping showed better results than that of liquid-solid doping. Furthermore, the influences of the size distribution of $La_2O_3$ on properties of Mo alloys was discussed by dislocation pile-up theory.

• Advances in nano research
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• v.10 no.1
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• pp.91-99
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• 2021

Silicene is an emerging two-dimensional (2D) semiconductor material which has been envisaged to be compatible with conventional silicon technology. This paper presents a theoretical study of uniformly doped silicene with aluminium (AlSi3) Field-Effect Transistor (FET) along with the benchmark of device performance metrics with other 2D materials. The simulations are carried out by employing nearest neighbour tight-binding approach and top-of-the-barrier ballistic nanotransistor model. Further investigations on the effects of the operating temperature and oxide thickness to the device performance metrics of AlSi3 FET are also discussed. The simulation results demonstrate that the proposed AlSi3 FET can achieve on-to-off current ratio up to the order of seven and subthreshold swing of 67.6 mV/dec within the ballistic performance limit at room temperature. The simulation results of AlSi3 FET are benchmarked with FETs based on other competitive 2D materials such as silicene, graphene, phosphorene and molybdenum disulphide.