• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.179-182
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• 1994

We have investigated the optical and electrochromic properties of molybdenum oxide(MoO$_3$) films by thermal evaporation. The MoO$_3$films deposited at substrate temperatures below 200$^{\circ}C$ are found to be amorphous and annealed films at temperature 300$^{\circ}C$ for 1 hour in air are crystalline. The optical energy gap calculated from the transmittance and reflectance spectra of MoO$_3$ films is near 2.75 eV and 3.25 eV for amorphous films and crystalline films, respectively. The MoO$_3$ thin films exhibit light blue to dark blue optical modulation on lithium intercalation and have a uniform transmittance modulation over a wavelength range of 300∼1100 nmcompared to tungsten oxide films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.192-197
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• 2017

Hydrogenated Amorphous Silicon (a-Si:H) is used as an emitter layer in HIT (heterojunction with Intrinsic Thin layer) solar cells. Its low band gap and low optical properties (low transmittance and high absorption) cause parasitic absorption on the front side of a solar cell that significantly reduces the solar cell blue response. To overcome this, research on CSC (carrier Selective Contacts) is being actively carried out to reduce carrier recombination and improve carrier transportation as a means to approach the theoretical efficiency of silicon solar cells. Among CSC materials, molybdenum oxide ($MoO_x$) is most commonly used for the hole transport layer (HTL) of a solar cell due to its high work function and wide band gap. This paper analyzes the electrical and optical properties of $MoO_x$ thin films for use in the HTL of HIT solar cells. The optical properties of $MoO_x$ show better performance than a-Si:H and ${\mu}c-SiO_x:H$.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.85-90
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• 2015

Two-step processes for preparing $Cu(In,Ga)Se_2$ absorber layers consist of precursor layer formation and subsequent annealing in a Se-containing atmosphere. Among the various deposition methods for precursor layer, the nonvacuum (wet) processes have been spotlighted as alternatives to vacuum-based methods due to their potential to realize low-cost, scalable PV devices. However, due to its porous nature, the precursor layer deposited on Mo substrate by nonvacuum methods often suffers from thick $MoSe_2$ formation during selenization under a high Se vapor pressure. On the contrary, selenization under a low Se pressure to avoid $MoSe_2$ formation typically leads to low crystal quality of absorber films. Although TiN has been reported as a diffusion barrier against Se, the additional sputtering to deposit TiN layer may induce the complexity of fabrication process and nullify the advantages of nonvacuum deposition of absorber film. In this work, Mo oxide layers via thermal oxidation of Mo substrate have been explored as an alternative diffusion barrier. The morphology and phase evolution was examined as a function of oxidation temperature. The resulting Mo/Mo oxides double layers were employed as a back contact electrode for $CuInSe_2$ solar cells and were found to effectively suppress the formation of $MoSe_2$ layer.

• Journal of the Korean institute of surface engineering
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• v.56 no.2
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• pp.160-168
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• 2023

Recently, investigation on metallization is a key for a stretchable display. Amorphous metal such as Ni and Zr based amorphous metal compounds are introduced for a suitable material with superelastic property under certain stress condition. However, Ni and Zr based amorphous metals have too high resistivity for a display device's interconnectors. In addition, these metals are not suitable for display process chemicals. Therefore, we choose an aluminum based amprhous metal Al-Mo as a interconnector of stretchable display. In this paper, Amorphous Forming Composition Range (AFCR) for Al-Mo alloys are calculated by Midema's model, which is between 0.1 and 0.25 molybdenum, as confirmed by X-ray diffraction (XRD). The elongation tests revealed that amorphous Al-20Mo alloy thin films exhibit superior stretchability compared to pure Al thin films, with significantly less increase in resistivity at a 10% strain. This excellent resistance to hillock formation in the Al20Mo alloy is attributed to the recessed diffusion of aluminum atoms in the amorphous phase, rather than in the crystalline phase, as well as stress distribution and relaxation in the aluminum alloy. Furthermore, according to the AES depth profile analysis, the amorphous Al-Mo alloys are completely compatible with existing etching processes. The alloys exhibit fast etch rates, with a reasonable oxide layer thickness of 10 nm, and there is no diffusion of oxides in the matrix. This compatibility with existing etching processes is an important advantage for the industrial production of stretchable displays.

• Journal of Electrochemical Science and Technology
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• v.7 no.2
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• pp.170-178
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• 2016

Composited molybdenum oxide and amorphous carbon (MoO₃/C) as anode material for lithium ion batteries has been successfully synthesized by calcining polyaniline (PANI) doped with ammonium heptamolybdate tetrahydrate (AMo). The as prepared electrode material was characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR) and field emission scanning electron microscopy (FE-SEM). The electrochemical performance of the anode was investigated by galvanostatic charge/discharge, cyclic voltammetry (CV), and electrochemical impedance spectroscopy (EIS). The MoO₃/C shows higher specific capacity, better cyclic performance and rate performance than pristine MoO₃ at room temperature. The electrochemical of MoO₃/C properties at various temperatures were also investigated. At elevated temperature, MoO₃/C exhibited higher specific capacity but suffered rapidly declines. While at low temperature, the electrochemical performance was mainly limited by the low kinetics of lithium ion diffusion and the high charge transfer resistance.

• Journal of Sensor Science and Technology
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• v.24 no.6
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• pp.419-422
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• 2015

Pure and Mo-doped ZnO hollow nanofibers were prepared by single capillary electrospinning and their gas sensing characteristics toward 5 ppm ethanol, trimethylamine (TMA), CO and $H_2$ were investigated. The gas responses and responding kinetics were dependent upon sensing temperature and Mo doping. Mo-doped ZnO hollow nanofibers showed high response to 5 ppm TMA ($R_a/R_g=111.7$, $R_a$: resistance in air, $R_g$: resistance in gas) at $400^{\circ}C$, while the responses of pure ZnO hollow nanofibers was low ($R_a/R_g=47.1$). In addition, the doping of Mo enhanced selectivity toward TMA. The enhancement of gas response and selectivity to TMA by Mo doping to ZnO nanofibers was discussed in relation to the interaction between basic analyte gas and acidic additive materials.

• Corrosion Science and Technology
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• v.23 no.4
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• pp.255-265
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• 2024

Duplex stainless steels (UNS S32205, UNS S32750) are used in various environments. The potentiodynamic polarization tests were conducted at 30 ℃ in order to study the electrochemical corrosion behaviors of duplex stainless steels under different seawater concentrations (fresh water, seawater, mixed water). The results of Tafel analysis in seawater showed that UNS S32205 and UNS S32750 had the highest corrosion current densities at 6.12 × 10^-4 mA/cm² and 5.41 × 10^-4 mA/cm², respectively. The pitting potentials of UNS S32205 and UNS S32750 were comparable to or higher than the oxygen evolution potential in fresh water, mixed water, and seawater. The maximum damage depths and surface damage ratio caused by pitting corrosion increased with chloride concentration. The synergy effect of molybdenum and nitrogen enhances the concentration of Mo, Ni, and Cr at the interface of the metal-electrolyte. In particular, in the case of nitrogen, NH₃ and NH₄⁺ are formed to compensate for the pH drop in the pitting region, thereby strengthening the repassivation of the film. The excellent corrosion resistance of UNS S32750 is attributed to the strengthening effect of the chromium oxide film due to the presence of molybdenum and nitrogen.

• Journal of the Korean institute of surface engineering
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• v.51 no.3
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• pp.185-190
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• 2018

Dopant-free silicon heterojunction solar cells using Transition Metal Oxide(TMO) such as Molybdenum Oxide($MoO_X$) and Vanadium Oxide($V_2O_X$) have been focused on to increase the work function of TMO in order to maximize the work function difference between TMO and n-Si for a high-efficiency solar cell. One another way to increase the work function difference is to control the silicon wafer resistivity. In this paper, dopant-free silicon heterojunction solar cells were fabricated using the wafer with the various resistivity and analyzed to understand the effect of n-Si work function. As a result, it is shown that the high passivation and junction quality when $V_2O_X$ deposited on the wafer with low work function compared to the high work function wafer, inducing the increase of higher collection probability, especially at long wavelength region. the solar cell efficiency of 15.28% was measured in low work function wafer, which is 34% higher value than the high work function solar cells.

• Journal of IKEEE
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• v.23 no.4
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• pp.1128-1133
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• 2019

This paper proposed colored front panel glass for Building Integrated Photovoltaic (BIPV) systems using multi-layered thin films composed of transition metal oxide (TMO) layers. Molybdenum oxide (MoO₃) and tungsten oxide (WO₃) provided complementary and suitable materials in making effective interference of reflected light from interfaces with significant difference in refractive indices. A simple, fast, and cheap fabrication method was achieved by depositing the multi-layer films in a single thermal evaporator. Magenta colored glass with optical transmittance of more than 90% was achieved with MoO₃ (60nm)/WO₃(100nm) multi-layered film. This technology could play in a critical role in commercial BIPV system applications.

• Korean Journal of Materials Research
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• v.30 no.2
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• pp.81-86
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• 2020

MoO₃ metal oxide nanostructure was formed by hydrothermal synthesis, and a perovskite solar cell with an MoO₃ hole transfer layer was fabricated and evaluated. The characteristics of the MoO₃ thin film were analyzed according to the change of hydrothermal synthesis temperature in the range of 100 ℃ to 200 ℃ and mass ratio of AMT : nitric acid of 1 : 3 ~ 15 wt%. The influence on the photoelectric conversion efficiency of the solar cell was evaluated. Nanorod-shaped MoO₃ thin films were formed in the temperature range of 150 ℃ to 200 ℃, and the chemical bonding and crystal structure of the thin films were analyzed. As the amount of nitric acid added increased, the thickness of the thin film decreased. As the thickness of the hole transfer layer decreased, the photoelectric conversion efficiency of the perovskite solar cell improved. The maximum photoelectric conversion efficiency of the perovskite solar cell having an MoO₃ thin film was 4.69 % when the conditions of hydrothermal synthesis were 150 ℃ and mass ratio of AMT : nitric acid of 1 : 12 wt%.