• 제목/요약/키워드: Molybdenum oxide

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Theoretical Study of Bonding and Electrical Conductivity in the Ternary Molybdenum Oxide $KMo_4O_6$

  • 강대복
    • Bulletin of the Korean Chemical Society
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    • 제16권10호
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    • pp.929-933
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    • 1995
  • The electronic band structure and electrical properties of KMo4O6 containing chains of condensed molybdenum octahedra are analyzed by means of the extended Hu&ckel tight-binding method. KMo4O6 has partially filled bands of 1D as well as 3D character. They also exhibit the anisotropic band dispersions with bandwidths much larger along the c* axis than along the directions perpendicular to it. Thus, conduction electrons are essentially delocalized along the c* direction (i.e., the chain of condensed molybdenum octahedra) in the solid. The 1D band of two partially filled d-block bands leads to Fermi surface nesting with the wave vector q=0.3c*. The CDW instability due to this nesting is expected to cause the phase transition associated with the resistivity anomaly at low temperature. The characteristics of metallic behavior in the crystallographic ab plane are explained on the basis of the unnested 2D Fermi surfaces.

인듐틴옥사이드와 몰리브데늄을 이용한 외부 기준 저항이 필요 없는 온도센서 (Temperature sensor without reference resistor by indium tin oxide and molybdenum)

  • 전호식;배병성
    • 센서학회지
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    • 제19권6호
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    • pp.483-489
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    • 2010
  • Display quality depends on panel temperatures. To compensate it, temperature sensor was integrated on the panel. The conventional temperature sensor integrated on the panel needs external reference resistor. Since the resistance of external resistor can vary according to the variation of the environment temperature, the conventional temperature sensor can make error in temperature sensing. The environmental temperatures can change by the back light unit, driving circuits or chips. In this paper, we proposed a integrated temperature sensor on display panel which does not need external reference resister. Instead of external reference resistor, we used two materials which have different temperature coefficient in resistivity. They are connected serially and the output voltage was measured at the point of connection with the applied voltage to both ends. The proposed sensor was fabricated with indium tin oxide(ITO), and Mo metal electrode temperature sensor which were connected serially. We verified the temperature senor by the measurements of sensitivity, lineality, hysteresis, repeatability, stability, and accuracy.

Mo-Hf-C계 합금의 열처리에 따른 미세조직 변화에 관한 연구 (A Study on the Change of Microstructures by Heat-treatment in Mo-Hf-C Alloys)

  • 윤국한;김형기;이종무;박원구;최주
    • 한국재료학회지
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    • 제3권2호
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    • pp.111-120
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    • 1993
  • 플라즈마 아크 용해에 의해 0.31-1.14at%Hf과 0.08-1.00at%C의 조성을 갖는 Mo시편을 제조하여, 열처리에 따른 미세조직 변화를 광학현미경, AES(Auger Electron Spectroscopy)및 투과전자현미경(TEM)으로 조사하였다. 산소함량이 약 830ppm인 초기분말을 압분체로 성형하여 용해한 결과, 산소함량 약 40-130ppm의 시편으로 제조할 수 있었으며, 이때 Hf및 C의 첨가량이 증가할수록 시편의 결정립은 미세화되었다. Mo-1.14at% Hf-1.00at % C 조성의 시편을 열처리한 결과 130$0^{\circ}C$에서 결정립내의 편상의 ${\beta}$-Mo 탄화물(molybdenum carbide)이 열역학적으로 더욱 안정한 $\alpha$-Mo 탄화물로 변태되기 시작하고, 1400-150$0^{\circ}C$온도 구간에서는 급내에 의해 고용되어 있던 Hf과 C이 반응하여 미량의 Hf탄화물이 석출되었으며, 150$0^{\circ}C$에서는 결정립계에 Hf 탄화물이 편석되었다. 1500-170$0^{\circ}C$에서는 결정립계에 편석된 Hf탄화물이 분해되고 열역학적으로 더욱 안정한 Hf 산화물(Hafnium oxide)이 석출되었으며, 결정립내에도 미세한 Hf 산화물이 석출되었다.

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Ni3Al-7.8%Cr-1.3%Zr-0.8%Mo-0.025%B 합금의 고온산화막분석 (Characterization of Oxide Scales Formed on Ni3Al-7.8%Cr-1.3%Zr-0.8%Mo-0.025%B)

  • 김기영;이동복
    • 한국재료학회지
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    • 제12권3호
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    • pp.220-224
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    • 2002
  • The oxide scales formed on $Ni_3Al$-7.8%Cr-1.3%Zr-0.8%Mo-0.025%B after oxidation at 900, 1000 and 110$0^{\circ}C$ in air were studied using XRD, SEM, EPMA and TEM. The oxide scales consisted primarily of $NiO,\; NiAl_2O_4,\;{\alpha}-Al_2O_3,\; monoclinic-ZrO_2,\; and \;tetragonal-ZrO_2$. The outer layer of the oxide scale was rich in Ni-oxides, whereas the internal oxide stringers were rich in Al-oxides and $ZrO_2$. Within the above oxide scales, Cr and Mo tended to exist as dissolved ions.

Co-Deposition법을 이용한 Yb Silicide/Si Contact 및 특성 향상에 관한 연구

  • 강준구;나세권;최주윤;이석희;김형섭;이후정
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.438-439
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    • 2013
  • Microelectronic devices의 접촉저항의 향상을 위해 Metal silicides의 형성 mechanism과 전기적 특성에 대한 연구가 많이 이루어지고 있다. 지난 수십년에 걸쳐, Ti silicide, Co silicide, Ni silicide 등에 대한 개발이 이루어져 왔으나, 계속적인 저저항 접촉 소재에 대한 요구에 의해 최근에는 Rare earth silicide에 관한 연구가 시작되고 있다. Rare-earth silicide는 저온에서 silicides를 형성하고, n-type Si과 낮은 schottky barrier contact (~0.3 eV)를 이룬다. 또한, 비교적 낮은 resistivity와 hexagonal AlB2 crystal structure에 의해 Si과 좋은 lattice match를 가져 Si wafer에서 high quality silicide thin film을 성장시킬 수 있다. Rare earth silicides 중에서 ytterbium silicide는 가장 낮은 electric work function을 갖고 있어 낮은 schottky barrier 응용에서 쓰이고 있다. 이로 인해, n-channel schottky barrier MOSFETs의 source/drain으로써 주목받고 있다. 특히 ytterbium과 molybdenum co-deposition을 하여 증착할 경우 thin film 형성에 있어 안정적인 morphology를 나타낸다. 또한, ytterbium silicide와 마찬가지로 낮은 면저항과 electric work function을 갖는다. 그러나 ytterbium silicide에 molybdenum을 화합물로써 높은 농도로 포함할 경우 높은 schottky barrier를 형성하고 epitaxial growth를 방해하여 silicide film의 quality 저하를 야기할 수 있다. 본 연구에서는 ytterbium과 molybdenum의 co-deposition에 따른 silicide 형성과 전기적 특성 변화에 대한 자세한 분석을 TEM, 4-probe point 등의 다양한 분석 도구를 이용하여 진행하였다. Ytterbium과 molybdenum을 co-deposition하기 위하여 기판으로 $1{\sim}0{\Omega}{\cdot}cm$의 비저항을 갖는 low doped n-type Si (100) bulk wafer를 사용하였다. Native oxide layer를 제거하기 위해 1%의 hydrofluoric (HF) acid solution에 wafer를 세정하였다. 그리고 고진공에서 RF sputtering 법을 이용하여 Ytterbium과 molybdenum을 동시에 증착하였다. RE metal의 경우 oxygen과 높은 반응성을 가지므로 oxidation을 막기 위해 그 위에 capping layer로 100 nm 두께의 TiN을 증착하였다. 증착 후, 진공 분위기에서 rapid thermal anneal(RTA)을 이용하여 $300{\sim}700^{\circ}C$에서 각각 1분간 열처리하여 ytterbium silicides를 형성하였다. 전기적 특성 평가를 위한 sheet resistance 측정은 4-point probe를 사용하였고, Mo doped ytterbium silicide와 Si interface의 atomic scale의 미세 구조를 통한 Mo doped ytterbium silicide의 형성 mechanism 분석을 위하여 trasmission electron microscopy (JEM-2100F)를 이용하였다.

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The Effect of the Ceramic Precipitates on the Hydrogen Solubility in Pd Alloys

  • Koh, Je Mann;Lee, Kil Hong;Baek, Seung Nam;Noh, Hak
    • 한국수소및신에너지학회논문집
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    • 제10권2호
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    • pp.101-106
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    • 1999
  • Hydrogen solubility in internally oxidized Pd-Mo(Al) alloys has been studied at 323 K from the measurements of pressure-composition(p-c) isotherms. Internal oxidation of $Pd_{0.985}Al_{0.015}$ and $Pd_{0.97}Mo_{0.03}$ alloys results in the precipitation of Al and Mo particles in a matrix of pure Pd. It has been observed that the presence of the aluminum and molybdenum oxide precipitates results in an enhanced hydrogen solubility in the dilute phase region of Pd-H in a Pd/aluminum(molybdenum)oxide composites. Hydrogen solubility enhancements due to the presence of residual stresses around ceramic particles have been observed from p-c isotherms determined at 323 K after oxidation at 1073 K. The solubility enhancements in completely internally oxidized alloys are greater than that in partially oxidized alloys. The stress fields near the ceramic precipitates are the major source of the solubility enhancements. Transmission electron microscopy indicates that alumina precipitates are nanometer-sized and coherent with the Pd matrix after oxidation.

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Comparative Study of Undoped and Nickel-Doped Molybdenum Oxide Photoanodes for PEC Water Splitting

  • Garcia-Garcia, Matias
    • Journal of Electrochemical Science and Technology
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    • 제13권3호
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    • pp.377-389
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    • 2022
  • The current global energy supply depends heavily on fossil fuels. This makes technology such as direct water splitting from harvesting solar energy in photoelectrochemical (PEC) systems potentially attractive due to its a promising route for environmentally benign hydrogen production. In this study, undoped and nickel-doped molybdenum oxide photoanodes (called photoanodes S1 and S2 respectively) were synthesized through electrodeposition by applying -1.377 V vs Ag/AgCl (3 M KCl) for 3 hours on an FTO-coated glass substrate immersed in molibdatecitrate aqueous solutions at pH 9. Scanning electron microscopy (SEM), atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS) were used for microstructural and compositional characterizations of the photoanodes. In addition, the optical and photoelectrochemical characterizations of these photoanodes were performed by UV-Visible spectroscopy, and linear scanning voltammetry (LSV) respectively. The results showed that all the photoanodes produced exhibit conductivity and catalytic properties that make them attractive for water splitting application in a photoelectrochemical cell. In this context, the photoanode S2 exhibited better photocatalytic activity than the photoanode S1. In addition, photoanode S2 had the lowest optical band-gap energy value (2.58 eV), which would allow better utilization of the solar spectrum.

Mo, Nb첨가가 TiAl합금의 산화에 미치는 영향 (Effect of Mo and Nb on High Temperature Oxidation of TiAl Alloys)

  • 김재운;이동복
    • 한국재료학회지
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    • 제14권9호
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    • pp.614-618
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    • 2004
  • Alloys of $Ti46\%Al-2\%Mo-2\%Nb$ were oxidized between 800 and $1000^{\circ}C$ in air, and their oxidation characteristics were studied. The alloys displayed good oxidation resistance due mainly to the beneficial effects of Mo and Nb. The oxide scales formed consisted primarily of an outer $TiO_2$ layer, an intermediate $Al_{2}O_3-rich$ layer, and an inner mixed layer of ($TiO_{2}+Al_{2}O_3$). Molybdenum and niobium dissolved in the scale effectively improved oxidation resistance. They were mainly distributed in the inner mixed layer of ($TiO_{2}+Al_{2}O_3$).

Ti-15Mo-5Zr-3Al 합금의 고온산화 (High Temperature Oxidation of Ti-15Mo-5Zr-3Al Alloy)

  • 우지호;김종성;백종현;이동복
    • 한국표면공학회지
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    • 제31권5호
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    • pp.278-285
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    • 1998
  • Alloys of Ti-15Mo-5Zr-3Al(wt%) were oxidized in air between 700 and $900^{\circ}C$. It was found that the oxidation resistance is much better than that of either commercially available pure Ti-6Al-4V(wt%) alloys. The oxide scales were primarily composed of thick Ti-ox-ides which were formed by the inward diffusion of oxygen from the atmosphere. At higher temperatures a thin $\alpha$-$Al_2O_3$ layer was formed on Ti-oxides owing to the outward diffusion of Al from the base alloys. Molybdenum, the noblest metal among the alloy components, was predominantly present behind the oxide-substrate interface. Zirconium, an oxygen active metal, was present at both the oxide layer and the substrate.

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