• 한국응용과학기술학회지
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• 제30권3호
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• pp.444-450
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• 2013

The influences of scatterer and absorber in turbid material by light scattering on silica fume of additive were interpreted for the scattered intensity and wavelength. The molecular properties have been studied by Monte Carlo simulation in resin of New Austria Tunnel Method. It has been found that the effects of optical properties in scattering media could be investigated by the optical parameters(${\mu}_s$, ${\mu}_a$,${\mu}_t$). Monte Carlo Simulation method for modelling of light transport in the civil engineering and construction field was applied. The results using a phantom were discussed that the distance from source to detector is closer, and scattering intensity is stronger with those obtained through Monte Carlo Simulation. It may also aid in designing the best model for coatings and corrosion for the durability of metal constructions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.66-69
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• 2001

Effect of $N_2$ flow rate on properties of GaN thin films grown by plasma-enhanced molecular beam epitaxy(PEMBE) was discussed to optimize the quality of thin films. It was found that at low $N_2$ flow rate indicating high III/V flux ratio, the growth rate of GaN thin films was controlled by $N_2$ flux, and at high $N_2$ flow rate the growth rate was not controlled by $N_2$ flux any longer. It was also found that III/V flux ratio affected film quality. The film grown at higher $N_2$ flow rate showed low background carrier concentration, higher carrier mobility, and narrow FWHM in band-edge emission of low temperature PL. It is thought that the film in more Ga flux region was grown by 2-dimensional layer-by-layer growth mode, and the film in more nitrogen region was grown by 3-D island growth mode. All samples exhibited a good crystallinity.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.35.1-35.1
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• 2011

수열합성법으로 제작된 ZnO 나노와이어는 저온 MBE (Molecular Beam Epitaxy) 방식과 달리 Ti, Au와 같은 촉매로 부터 성장이 끝난뒤 나노와이어 끝에 남는 촉매를 제거해야할 필요가 없으며, 저온에서 합성이 가능하기 때문에 현재 연구가 많이 되고 있는 방법중에 하나이다. 본 연구에서는 수열 합성법을 이용하여 금속촉매 또는 AZO로 seed를 형성한 후 기판 위에 균일한 크기의 ZnO 나노막대를 성장시키고 성장밀도 및 길이의 간편한 제어를 하였다. 이를 위해 계면활성제인 PEI (Polyethyleneimine) 첨가 및 Chloride ($Cl_-$)를 조절하여 ZnO 나노와어의 성장밀도를 조절 하고자 하였다. 실험방법으로는 전구체인 Zn(NO3)2${\cdot}$6H2O와 HMT에 Chloride 계열인 Ammonium chloride 와 Kcl 의 몰농도를 각각 조절하고 PEI를 첨가하여, ZnO 나노와이어를 성장하였다. 성장된 ZnO 나노와이어의 특성을 평가하기 위해 field emission scanning electron microscopy (FE-SEM)을 이용하여 광학적인 특성을 측정하였으며, 결정성을 조사하기 위해 X-ray diffraction (XRD)을 이용하여 분석하였다. 또한 scanning PL 장비를 통해 photoluminescence양을 측정하고 ZnO 나노와이어의 응용 가능성을 평가하였다.

• Applied Science and Convergence Technology
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• 제24권3호
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• pp.67-71
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• 2015

InP/InGaP quantum structures (QSs) were grown on GaAs (001) substrates by a migration-enhanced molecular beam epitaxy method. Temperature-dependent photoluminescence (PL) and emission wavelength-dependent time-resolved PL (TRPL) were performed to investigate the optical properties of InP/InGaP QSs as a function of migration enhanced epitaxy (MEE) growth cycles from 2 to 8. One cycle for the growth of InP QS consists of 2-s In and 2-s P supply with an interruption time of 10 s after each source supply. As the MEE growth cycle increases from 2 to 8, the PL peak is redshifted and exhibited different (larger, comparable, or smaller) bandgap shrinkages with increasing temperature compared to that of bulk InP. The PL decay becomes faster with increasing MEE cycles while the PL decay time increases with increasing emission wavelength. These PL and TRPL results are attributed to the different QS density and size/shape caused by the MEE repetition cycles. Therefore, the size and density of InP QSs can be controlled by changing the MEE growth cycles.

• Applied Science and Convergence Technology
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• 제26권3호
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• pp.52-54
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• 2017

An InGaN/GaN multiple quantum well (MQW) structure is grown on a GaN/sapphire template using a plasma-assisted molecular beam epitaxy (PA-MBE). The fluctuation of the quantum well thickness formed from roughly-grown InGaN layer results in a disordered photoluminescence (PL) spectrum. The surface morphologies of the InGaN layers with various In compositions are investigated by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). A blurred InGaN/GaN hetero-interface and the non-uniform QW size is confirmed by high resolution transmission electron microscopy (HR-TEM). Inhomogeneity of the quantum confinement results in a degradation of the quantum efficiency even though the InGaN layer has a uniform In composition.

• 한국광학회지
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• 제7권4호
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• pp.440-444
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• 1996

10Gbps급 이상의 광통신에 적합한 성능을 가지는 InAlAs/InGaAs 다중양자우물 구조(MQW) 애벌런치 광다이오드(APD)를 제작하였다. 본 논문에서는 MBE로 성장된 에피구조에서 높은 농도로 도핑된 field butter layer의 Be dopant의 다중양자우물 구조로의 indiffusion이 소자의 암전류 특성과 이득 특성에 이치는 영향을 분석하였다. Be의 indiffusion은 작은 양으로도 소자의 특성에 큰 영향을 끼칠 수 있음이 보여졌으며 spacer layer를 삽입함으로써 높은 대역폭을 유지하면서 낮은 암전류 특성을 나타내는 소자를 제작함으로써 space layer의 삽입이 indiffusion의 영향을 효과적으로 막을 수 있음을 보였다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.449-452
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• 1998

We have studied the oxidatio nrte of $Si_{1-x}Ge_{x}$ epitaxial layer grown by MBE(molecular beam epitaxy). Oxidation were performed at 700.deg. C, 800.deg. C, 900.deg. C, and 1000.deg. C. After the oxidation, the results of AES(auger electron spectroscopy) showed that Ge was completely rejected out of the oxide and pile up at $SiO_{2}/$Si_{1-x}Ge_{x}$ interface. It is shown that the presence of Ge at the $SiO_{2}$/$Si_{1-x}Ge_{x}$ interface changes the dry oxidation rate. The dry oxidation rate was equal to that of pure Si regardless of Ge mole fraction at 700.deg. C and 800.deg.C, while it was decreased at both 900.deg. C and 1000.deg.C as the Ge mole fraction was increased. The ry oxidation rates were reduced for heavy Ge concentration, and large oxidation time. In the parabolic growth region of $Si_{1-x}Ge_{x}$ oxidation, The parabolic rate constant are decreased due to the presence of Ge-rich layer. After the longer oxidation at the 1000.deg.C, AES showed that Ge peak distribution at the $SiO_{2}$/$Si_{1-x}Ge_{x}$ interface reduced by interdiffusion of silicon and germanium.

• Journal of Magnetics
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• 제11권4호
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• pp.182-188
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• 2006

The search for high-density recording materials has been one of most active and vigorous field in the field of magnetism. $FePt-L1_{0}$ nanoparticle has emerged as a potential candidate because of its high anisotropy. In this paper, we provide an overview of recent work at Argonne National Laboratory that contributes to the ongoing dialogue concerning the relation between structure and properties of the FePt nanoparticle system. In particular we discuss the ability to control structure and properties via dosing with Cr. Cr-dosed FePt films were grown via molecular beam epitaxy and annealed at $550^{\circ}C$ in an ultrahigh vacuum chamber, and were studied with the surface magneto-optic Kerr effect (SMOKE), scanning electron microscopy (SEM) and x-ray magnetic circular dichroism (XMCD). We found that small dosage of Cr helps to generate $L1_{0}$ phase FePt magnetic nanoparticles with small size, defined shape and regular spatial distribution on MgO (001) substrate. The nanostructures are ferromagnetic with high magnetic coercivity (${\sim}0.9T$) and magnetic easy axis in the desired out-of-plane orientation. We also show that controlling the lateral region where nanostructures exist is possible via artificial patterning with Cr.

• 천문학회보
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• 제41권2호
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• pp.38.1-38.1
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• 2016

TRAO has been newly equipped with a multi-beam receiver system, 16 pixel MMIC preamplifiers in a $4{\times}4$ array, a FFT spectrometer, and new control computer systems. In our new receiver systems one can make simultaneous observations with two molecular lines maximum 15 GHz apart with a spectral band width of 60 MHz. Typical system temperatures are about 160 - 200 K at 86 ~ 100 KHz and 400 - 500 K at 115 GHz in the dry weather. The new systems using On-The-Fly mode were found to be very efficient in making quick and sensitive maps of large clouds with a high velocity resolution (~0.04 km/s at 100 GHz). TRAO now calls for proposals for 2016 and 2017 observing season for everybody. In the talk we will introduce the current status of TRAO upgrade and its scientific preliminary results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.811-813
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• 2003

We investigated the electrical properties of self-assembled (4,4'-Di(ethynylphenyl)-2'-nitro-1-thioacetylbenzene), which has been well known as a conducting molecule having possible application to molecular level negative differential resistance(NDR)[1]. Generally, the phenomenon of NDR can be characterized by the decreasing current with the increasing voltage[2]. To deposit the SAM layer onto gold electrode, we transfer the prefabricated nanopores into a 1mM self-assembly molecules in THF solution. Au(111) substrates were prepared by ion beam sputtering method of gold onto the silicon wafer. As a result, we measured the voltage-current properties and confirmed the negative differential resistance properties of self-assembled organic thin film and measured, using Scanning Tunneling Microscopy(STM).