• 한국세라믹학회지
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• 제35권5호
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• pp.472-478
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• 1998

Ferroelectric SrBi2Ta2O9(SBT) films were deposited on Pt/Ti/SiO2/Si substrates at 50$0^{\circ}C$ using a sintered SBT target Bi and Ta targets by modified rf magnetron sputtering and then were annealed at 80$0^{\circ}C$ for 10min in oxygen ambinet(760 torr) The composition of the SBT films could be easily controlled using the mul-ti-targets. The film composition of {{{{ {Sr }_{0.8 } {Bi }_{2.9 } {Ta}_{2.0 } {O }_{9 } }} was obtained with SBTd sputtering power of 100 W Bi of 25W and Ta of 10 W. A 250nm thick SBT films exhibited a dense and uniform microstructure and showed the remanent polarization(Pr) of 14.4 $\mu$C/cm2 and the coercive field({{{{ {E }_{c } }})of 60 kV/cm at applied voltage of 5 V. The SBT films show practically no polarization fatigue up to {{{{ {10 }_{10 } }} cycles under 5V bipolar pulse. The retention characteristics of the SBT films looked very promising and the leakage current density of the SBT films was about 1.23$\times${{{{ {10 }^{-7 } }}A/c{{{{ {m }^{2 } }} at 120kV/cm.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 추계학술발표회
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• pp.138-138
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• 1997

• The Korean Journal of Ceramics
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• 제7권1호
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• pp.26-29
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• 2001

Indium tin oxide (ITO) films were deposited on glass substrates at $300^{\circ}C$ in oxygen/argon mixtures by RF-enhanced DC-magnetron sputtering and were compared to those by conventional DC magnetron sputtering. The RF enhancement was performed using a coil above an ITO target. X-ray diffraction measurements revealed that RF-enhanced plasma affected the preferred orientation and the crystallinity of the films. The resistivity of the films prepared by RF-enhanced DC-magnetron sputtering was almost constant at oxygen content lower than 0.3% and then increased sharply with increasing oxygen content. However the resistivity of the films by conventional sputtering has little dependence on the oxygen content. Those results can be explained on the basis of the incorporation of oxygen into the ITO films due to the RF enhancement.

• 한국재료학회지
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• 제7권6호
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• pp.522-528
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• 1997

RF-magnetron Sputtering Process를 이용하여 Pt/Ti/Si(100)기판위에 lanthanum-modified lead titanate 박막을 제작하였다. 기판온도와 증착시간이 증가함에 따라 증착율은 감소하였다. 기판온도가 증가함에 따라 fine grain들은 large grain으로 변화하였다. Perovskite구조는 기판온도 54$0^{\circ}C$, gas pressure 30mtorr에서 나타나기 시작하였다. 본 실험에서 perovskite 박막제작에 대한 조건은 기판온도 58$0^{\circ}C$, gas pressure 30mtorr였다. Pt/Ti/Si(100) 우선 배향된 박막을 얻었다. La양이 증가함에 따라 유전율, 항전계, 잔류분극량은 증가하였다. 중심주파수가 44.7MHz, 전파속도는 2680m/sec를 가지는 SAW filter 특성을 얻었다.

• 한국표면공학회지
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• 제42권2호
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• pp.86-94
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• 2009

Various types of multilayer coatings including Al/$Al_2O_3$ structure have been prepared on Nd-Fe-B permanent magnet to modify the morphology of the coating and to enhance the corrosion resistance of the magnet. Magnetron sputtering has been employed to make the multilayer coatings. $Al_2O_3$sputtering conditions were optimized in reactive sputtering by varying the deposition parameters. The formation of $Al_2O_3$ film was confirmed from the binding energy shift measured by electron spectroscopy for chemical analysis. 3 types of coating structures were designed and prepared by magnetron sputtering. The coating structures consist of (1) single Al coating, (2) modified coatings having oxide or plasma treated layer in the middle of coating structure, and (3) Al/$Al_2O_3$ multilayer coatings. Surface and cross-sectional morphologies showed that Al/$Al_2O_3$ multilayer grew as a layered structure, and that very compact Zone 3 like structure were formed. X-ray diffraction peak showed that the crystal orientations of multilayer coatings were similar to that of the bulk powder pattern. Hardness increased drastically when the Al thickness was around 1im in the Al/$Al_2O_3$ multilayer. From the salt spray test and pressure cooker test, it has been shown that the multilayer coatings showed good corrosion resistance compared to Al single or modified layer coatings.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.570-573
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• 2001

In this paper, GaN films have been grown on SiO$_2$/Si(100) substrates by RF magnetron sputtering. To obtain high quality GaN films, we used ZnO buffer layer and modified the process conditions. The charateristics of GaN films on RF power, substrate temperature and Ar/N$_2$gas ratio have been investigated by Auger electron spectroscopy and X-ray diffraction analysis. At RF power 150W, substrate temperature 500 $^{\circ}C$ and Ar/N$_2$=1:2 gas ratio, we could grow high quality GaN films. Through the atomic force microscope and photoluminescence analysises, it was observed that the crystallization of GaN films was improved with increasing annealing temperature and the optimal crystallization of GaN films was found at 1100 $^{\circ}C$ annealing temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.20-20
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• 1998

I Ion beam technology has recently attracted much interest because it has exciting t technological p아:ential for surface analysis, ion beam mixing, surface cleaning and etching i in thin film growth and semiconductor fabrication processes, etc. Es야~cially, ion beam s sputtering has been widely used for sputter depth profiling with x-photoelectron S spectroscopy (XPS) , Auger electron s$\pi$~troscopy(AES), and secondary-ion mass S야i따oscopy(SIMS). However, The problem of surface compositional ch없1ge due to ion b bombardment remains to be understo여 없ld solved. So far sputtering processes have been s studied by s따face an외ysis tools such as XPS, AES, and SIMS which use the sputtering p process again. It would be improbable to measure the modified surface composition profiles a accurately due to ion beam bombardment with surface analysis techniques based on sputter d depth profiling. However, recently Medium energy ion scattering spectroscopy(MEIS) has b been applied to study the sputtering of solid surface at ion bombardment and has been p proved that it has been extremely valuable in probing the surface composition 뻐d s structure nondestructively and quantita디vely with less than 1.0 nm depth resolution. To u understand the sputtering processes of solid surface at ion bombardment, The Molecular D Dynamics(MD) and Monte Carlo(MC) simulation has been used and give an intimate i insight into the sputtering processes of solid surfaces. In this presentation, the sputtering processes of alloys and compound samples at ion b bombardment will be reviewed and the MEIS results for the Ar+ sputter induced altered l layer of the TazOs thin film 뻐dd없nage profiling of Ar+ ion sputt얹"ed Si(100) surface will b be discussed with the results of MD and MC simulation.tion.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.39.2-39
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• 1998

• 한국진공학회지
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• 제9권3호
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• pp.242-248
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• 2000

고주파 스퍼터링 방법으로 증착조건을 변화시키면서 BST 박막을 제작하였다. 증착온도가 높을수록, Ar/O$_2$비가 적을수록 우수한 전기적 특성을 보였다. 누설전류 전도기구를 분석하기 위해 Schottky모델과 modified-Schottky모델을 도입하였다. BST 박막의 누설전류 전도기구는 기존의 Schottky모델이 아니라 modified-Schottky 모델을 따른다는 것을 알았다. Modified-Schottky 모델을 사용하여 광학유전상수 $\varepsilon$=4.9, 이동도 $\mu$=0.019 $\textrm{cm}^2$/V-s, 그리고 장벽높이 $\phi_b$ =0.79 eV를 구하였다.

• Bulletin of the Korean Chemical Society
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• 제31권8호
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• pp.2170-2174
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• 2010

The surfaces of $TiO_2$ and ZnO nanoparticles have been modified by gold (Au) nanoparticles by a reduction method in solution. Their interfacial electronic structures and optical absorptions have been studied by depth-profiling X-ray photoelectron spectroscopy (XPS) and UV-vis absorption spectroscopy, respectively. Upon Au-modification, UV-vis absorption spectra reveal a broad surface plasmon peak at around 500 nm. For the as-prepared Au-modified $TiO_2$ and ZnO, the Au $4f_{7/2}$ XPS peaks exhibit at 83.7 and 83.9 eV, respectively. These are due to a charge transfer effect from the metal oxide support to the Au. For $TiO_2$, the larger binding energy shift from that (84.0 eV) of bulk Au could indicate that Au-modification site of $TiO_2$ is different from that of ZnO. On the basis of the XPS data with sputtering depth, we conclude that cationic (1+ and 3+) Au species, plausibly $Au(OH)_x$ (x = 1-3), commonly form mainly at the Au-$TiO_2$ and Au-ZnO interfaces. With $Ar^+$ ion sputtering, the oxidation state of Ti dramatically changes from 4+ to 3+ and 2+ while that (2+) of Zn shows no discernible change based on the binding energy position and the full-width at half maximum (FWHM).