• Journal of the Korean Ceramic Society
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• v.33 no.8
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• pp.863-870
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• 1996

Fabricated modified PZT system for pyroelectric IR sensor were analyzed and characterized for dielectric piezoelectric and pyroelectric properties. Particle size and distribution of source powders were controlled by attrition milling process. 0.05PSS+yPT+(0.95-y)PZ+0.4 wt%MnO2 system was fabricated and investigated sintering density crystal structure and micro-structure through sintering conditions sintering temperature and sintering atmosphere. The poled sintered system of y=0.11 showed the lowest dielectric constant. The dielectric constants were increased with increasing y-mole ratio. The pyroelectric properties of modified PZT systems which were assembled to TO-5 package were measured by IR measurement system average out-voltage of 0.05PSS+0.1PT+0.84PZ+ wt%MnO2 was 3V.

• Transactions on Electrical and Electronic Materials
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• v.10 no.6
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• pp.196-199
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• 2009

The practical applications of piezoelectric ceramics are applied not only under low electric field environment. Therefore, an examination for characteristics of PZT ceramics under the high electric field condition can contribute to reducing the susceptibility of multifarious applications and to facilitating production of control circuits. These contributions can lead to the expansion of industrial applications. In this research, we fabricated disk-type PZT ceramic samples using conventional methods, measured the resonance characteristics of these samples under from low to high voltage conditions and calculated the PZT constants.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.743-745
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• 2002

Pyroelectric and dielectric properties of modified PZT thin film and bulk ceramics were studied. In case of bulk specimens were prepared by conventional ceramic process and thin films with same composition and (111) preferred orientation were prepared by the sol-gel process. Their crystal structure, pyroelectric and dielectric properties were investigated after poling at $150^{\circ}C$ for 30 min for bulk ceramics and no poling treatment, respectively. Dielectric constants and losses of bulk and thin film were 600, 875 and 0.028, 0.025, respectively. Pyroelectric coefficients obtained were $50nC/cm^2K$ and $30nC/cm^2K$, respectively.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.1 no.2
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• pp.27-32
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• 2008

A current research basically diverted towards an increase in the operational output with the minimization of the materials used, which ultimately scaled down the dimensions of ceramic electronic components. In this direction the nano-technology pave the revolutionary changes in particular the electronic industries. The applications of nano-sized particles or nano-sized materials are hence, playing a significant role for various purposes. The PZT(lead, zirconium, titanium) based ceramics which, are reported to be ferroelectric materials have their important applications in the areas of surface acoustic waves (SAW), filters, infrared detectors, actuators, ferroelectric random access memory, speakers, electronic switches etc. Moreover, these PZT materials possess the large electro mechanical coupling factor, large spontaneous polarization, low dielectric loss and low internal stress etc. Hence, keeping in view the unique properties of PZT piezoelectric ceramics we also tried to synthesize indigenously the small sized PZT ceramic powder in the laboratory by using the modified sol-gel approach. In this paper, propyl alcohol based sol-gel method was used for preparation of PZT piezoelectric ceramic. The powder obtained by this sol-gel process was calcined and sintering to reach a pyrochlore-free crystal phase. The characterization of synthesized material was carried out by the XRD analysis and the surface morphology was determined by high resolution scanning electron microscopy.

• Electrical & Electronic Materials
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• v.1 no.1
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• pp.44-53
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• 1988

In this study, PZT/PVDF composites with O-3 phase connectivity were prepared by hot pressing method, and the dielectric and piezoelectric properties as a function of PZT volume fraction were investigated. A modified cubic model was introduced to explain the influence of the PZT volume fraction on the experimentally determined dielectric constant. As A n=0.125, the measured dielectric constant values agreed with the calculated values. It was found that dielectric constant .xi.$_{33}$ and piezoelectric coefficient d$_{33}$ increased with indreasing PZT volume fraction, and hydrostatic piezoelectric figure of merit d/aub h/.g$_{h}$ was improved relative to that of the PZT single phase material.l.l.l.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.892-896
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• 2003

In this study, microstructure and piezoelectric properties of PSN-PZT ceramics modified with BiFeO$_3$ were investigated as a function of PNW substitution. With the increase of PNW substitution, tetragonality, Curie temperature and mechanical quality factor were decreased but grain size and electromechanical coupling factor(kp) was gradually increased. At 4 mol[%] PNW substitution, maximum kp of 0.567 was obtained.

• Journal of Ocean Engineering and Technology
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• v.24 no.6
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• pp.81-85
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• 2010

The effects of co-doping with complex dopants of softeners, $La^{+3}$ and/or $Nb^{+5}$, and a hardener, $Fe^{+3}$, on the microstructural and piezoelectric properties of PZT ceramics with a composition of a rhombohedral-tetragonal morphotropic phase boundary, $PbZr_{0.53}Ti_{0.47}O_3$, were investigated. Unlike single-element doping, the complex doping of both the softener and hardener ions led to various compensation effects for the piezoelectric properties of the PZT ceramics. For 0.5 wt.% $La_2O_3$ softener and/or 0.5 wt.% $Nb_2O_5$ doped compositions, there were apparent hardener doping (compensation) effects for an addition of over 1.0 wt.% $Fe_2O_3$. For the $La_2O_3$ and/or $Nb_2O_5$ doped composition, the co-dopant $Fe_2O_3$ addition led to lower kp and $\varepsilon$r, and increased $Q_m$ values. The prepared PZT ceramics modified with complex soft dopants, $La^{+3}$ and $Nb^+$, as well as a hard dopant, $Fe^{+3}$, showed that the piezoelectric properties were stable with the compositional variations, which made it possible to establish piezoelectric performances with higher reliability and reproducibility. The most improved piezoelectric properties of enhanced $Q_m$ with $\varepsilon_r$ remaining higher $k_p$, were obtained in the PZT composition complexly doped with $La^{+3}$ and $Fe^{+3}$. From the results obtained in this study, the properties of compositionally modified PZT ceramics can also be tailored over a wider range by changing the dopant compositions to meet the specific requirements for underwater or other applications.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.11A
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• pp.904-908
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• 2009

The PZT(lead, zirconium, titanium) based ceramics which, are reported to be ferroelectric materials have their important applications in the areas of surface acoustic waves (SAW), filters, infrared detectors, actuators, ferroelectric random acess memory, speakers, electronic switches etc. Moreover, these PZT materials possess the large electromechanical coupling factor, large spontaneous polarization, low dielectric loss and low internal stress etc. Hence, keeping in view the unique properties of PZT piezoelectric ceramics we also tried to synthesize indigenously the small sized PZT ceramic powder in the laboratory by using the modified sol-gel approach. In this paper, Propyl alcohol based sol-gel method was used for preparation of PZT piezoelectric ceramic. The powder obtained by this sol-gel process was calcined and sintering to reach a pyrochlore-free crystal phase. The characterization of synthesized material was carried out by the XRD analysis and the surface morphology was determined by high resolution scanning electron microscopy.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.6
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• pp.1001-1007
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• 2002

To improve the performance of the PZT thin flms, each PZT and PT layer was alternately deposited on a Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si substrate by a modified sol-gel solid precursor technique. For comparison, PZT thin films were also prepared with an identical method under the same conditions. XRD measurement revealed that the diffraction pattern of the multilayer film was due to the superimposition of the PZT and PT patterns. At 1㎑, a dielectric constant of 389 and 558, a dielectric loss of 1.2% and 1.1% were obtained for the PZT/PT and PZT thin films, respectively. If we consider the PT dielectric constant to be 260, it is clear that the dielectric constant of alternately deposited PZT/PT thin films was well adjusted. The PZT/PT thin film showed a low dielectric constant and a similar dielectric loss compared with those of the PZT film. The figures of merit on detectivity for the PZT/PT and PZT thin films were 20.3$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and 18.7$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and the figures of merit on voltage response were 0.038㎡/C and 0.028 ㎡/C, respectively. The high figures of merit for the PZT/PT film were ascribed to its relatively low dielectric constant when compared to the PZT thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.719-722
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• 2003

Ferroelectric $Pb(Zr_{1-x}Ti_x)O_3$ (PZT) films were deposited on (001) MgO single crystals using sol-gel method. Structural properties and surface morphologies of PZT films were investigated using an X-ray diffractometer and a scanning electron microscopy, respectively. The dielectric properties of PZT films were investigated with the dc bias field using interdigitated capacitors (IDC) which were fabricated on PZT films using a thick metal layer by photolithography and dry etching process. The small signal dielectric properties of PZT films were calculated by a modified conformal mapping method with low and high frequency data, such as capacitance measured by an impedance gain/phase analyzer at 100 kHz and reflection coefficient (S-parameter) measured by a HP 8510C vector network analyzer at 1 -20 GHz. The IDC on PZT films exhibited about 67% of capacitance change with an electric field of 135 kV/cm at 10 GHz. These PZT thin films can be applied to tunable microwave devices such as phase shifters, tunable resonators and tunable filters.