• Title/Summary/Keyword: Model furnace

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Growth and Photocurrent Properties of CdIn2S4/GaAs Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy 법에 의한 CdIn2S4 단결정 박막의 성장과 광전류 특성)

  • Lee, Sang-Youl;Hong, Kwang-Joon;Park, Jin-Sung
    • Journal of Sensor Science and Technology
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    • v.11 no.5
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    • pp.309-318
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    • 2002
  • A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured with Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7116\;eV-(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasi cubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K areascribed to the $A_1$-, $B_1$-, and C1-exciton peaks for n = 1.

Effect of titanium powder on the bond strength of metal heat treatment (티타늄 파우더가 금속의 열처리 시 결합강도에 미치는 영향)

  • Kim, Sa-Hak;Kim, Wook-Tae
    • Journal of Dental Rehabilitation and Applied Science
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    • v.33 no.2
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    • pp.71-79
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    • 2017
  • Purpose: Ni-Cr alloy does not contain Beryllium, causing the metal compound to form oxides in the furnace but by using Titanium as a chemical catalyst the forming of the oxides can be controlled, and by controlling the impurities formed on the metal surface, the possibility of the Ni-Cr alloy bond strength being increased can be analysed. Materials and Methods: Titanium was used as a chemical catalyst in the porcelain for the oxidation of beryllium-free metal (Ni-Cr) alloy. The T1 group, which does not use Titanium power as a chemical catalyst is a reference model for comparison. The T2 group and T3 group used 10 g and 20 g of Titanium power, respectively. They are fabricated to observe the shear bond strength and surface properties. There was no significance when One-way ANOVA analysis/Tukey Honestly Significant Difference Test was conducted for statistical analysis among groups (P > 0.05). Results: Results of measuring the three-point flexural bond strength of the Ni-Cr alloy and thickness of the oxide film. Experiment T3 using 20 g Titanium chemical catalyst: $39.22{\pm}3.41MPa$ and $6.66{\mu}m$, having the highest bond strength and thinness of oxide film. Experiment T2 using 10 g Titanium chemical catalyst: $34.65{\pm}1.39MPa$ and $13.22{\mu}m$. Experiment T1 using no Titanium chemical catalyst: $32.37{\pm}1.91MPa$ and $22.22{\mu}m$. Conclusion: The T2 and T3 experiments using Titanium chemical catalyst showed higher bond strength for the Ni-Cr alloy and lower thickness of oxide film than experiment T1, and the titanium catalyst being able to increase bond strength was observed.