Mixed-mode simulation of transient characteristics of 4H-SiC DMOSFETs (Mixed-mode simulation을 이용한 4H-SiC DMOSFETs의 채널 길이에 따른 transient 특성 분석)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2009.06a
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- pp.131-131
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- 2009