• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.261-264
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• 1997

In case of high speed and high mobility multibody tracked vehicle, it is hard to develop the realtime simulation model for track tension control because of the hundreds of highly nonlinear equations. In order to design more trustworthy realtime simulator for track tension control, it is necessary to use off-line tracked vehicle model. In this study, a step by step procedure is presented to develop realtime simulation model based on off-line tracked vehicle model. Simulation results show that modified off-line multibody tracked vehicle model can be used for real time simulation to control the track tension.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.4
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• pp.77-85
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• 2009

This paper proposes an efficient system level simulation method for MIMO-OFDM based system in the multi-cell environment. The proposed method analyzes effects of the cell structure, radio channel characteristics and user mobility. The user mobility effect on the system level performance is considered in both channel gain and distance. The receiver SINR calculation procedure is presented in the system which adopts MIMO-OFDM scheme under various system environments. This method can be flexibly extensible to various system environments and provides computationally efficient system level simulation technique which utilizes link level performance analysis. Extensive computer simulations results are presented to obtain the system performance in the various mobile cellular channels using the proposed method. Also this results are analyzed based on the packet error rate for different distances between the base station located in the center of the cell and the mobile user.

• Proceedings of the IEEK Conference
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• 2003.07a
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• pp.210-213
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• 2003

This paper presents a beamforming algorithm for the uplink application of a linear array antenna for WCDMA system. A steering beamforming algorithm is designed using a block DFT algorithm and its performance is analyzed and verified using computer simulations. Various environmental parameters such as the number of antenna elements, the number of users, the mobility of the target user, and the status of fast power control are reflected in the simulation study providing themselves as useful design and implementation guides for the reverse link beamforming of WCDMA system.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.9 s.339
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• pp.9-18
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• 2005

To make high-performance, low-power transistors beyond the technology node of 60 nm complementary metal-oxide-semiconductor field-effect transistors(C-MOSFETs) possible, the effect of electron mobility of the thickness of strained Si grown on a relaxed SiGe/SiO2/Si was investigated from the viewpoint of mobility enhancement via two approaches. First the parameters for the inter-valley phonon scattering model were optimized. Second, theoretical calculation of the electronic states of the two-fold and four-fold valleys in the strained Si inversion layer were performed, including such characteristics as the energy band diagrams, electron populations, electron concentrations, phonon scattering rate, and phonon-limited electron mobility. The electron mobility in an silicon germanium on insulator(SGOI) n-MOSFET was observed to be about 1.5 to 1.7 times higher than that of a conventional silicon on insulator(SOI) n-MOSFET over the whole range of Si thickness in the SOI structure. This trend was good consistent with our experimental results. In Particular, it was observed that when the strained Si thickness was decreased below 10 nm, the phonon-limited electron mobility in an SGOI n-MOSFT with a Si channel thickness of less than 6 nm differed significantly from that of the conventional SOI n-MOSFET. It can be attributed this difference that some electrons in the strained SGOI n-MOSFET inversion layer tunnelled into the SiGe layer, whereas carrier confinement occurred in the conventional SOI n-MOSFET. In addition, we confirmed that in the Si thickness range of from 10 nm to 3 nm the Phonon-limited electron mobility in an SGOI n-MOSFET was governed by the inter-valley Phonon scattering rate. This result indicates that a fully depleted C-MOSFET with a channel length of less than 15 m should be fabricated on an strained Si SGOI structure in order to obtain a higher drain current.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.193-196
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• 1987

We reported that hot electron phenomena in submicron nMOSFET by Monte Carlo method. In order to predict the influence of the hot electron effects on the device reliability, either simple analytical model or a complete two dimensional numerical simulation has been adopted. Results of numerical simulation, based on the static mobility model, may be inaccurate when gate length of MOSFET is scaled down to less than 1um. Most of device simulation packages utilize the static nobility model. Monte Carlo method based on stochastic analysis of carrier movement may be a powerful tool to characterize hot electrons. In this work, energy and velocity distribution of carriers were obtained to predict the relative degree of short channel effects for different device parameters. Our analysis shows a few interesting results when $V_{ds}$ is 5 volt, average electron energy does not increase with gate bias as evidenced by substrate current.

• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.53-57
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• 2012

This paper is for accurately simulating the breakdown of MHEMTs with an InP-etchstop layer. 2D-Hydrodynamic simulation parameters are investigated and calibrated for the InP-epitaxy layer. With these calibrated parameters, simulations are performed and analyzed for the breakdown of devices with an InP-etchstop layer. In the paper, the impact-ionization coefficients, the mobility degradation due to doping concentration, and the saturation velocity for InP-epitaxy layer are newly calibrated for more accurate breakdown simulation.

• Journal of IKEEE
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• v.11 no.4
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• pp.272-278
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• 2007

In this paper, we report on the 2D (two-dimensional) simulation result of the DC (direct current) electrical and thermal characteristics of AlGaN/GaN HEMTs (high electron mobility transistors) grown on Si substrate, in comparison with those grown on sapphire and SiC (silicon carbide) substrate, respectively. In general, the electrical properties of HEMT are affected by electron mobility and thermal conductivity, which depend on substrate material. For this reason, the substrates of GaN-based HEMT have been widely studied today. The simulation results are compared and studied by applying general Drift-Diffusion and thermal model altering temperature as 300, 400 and 500 K, respectively. With setting T=300 K and $V_{GS}$=1 V, the $I_{D,max}$ (drain saturation current) were 189 mA/mm for sapphire, 293 mA/mm for SiC, and 258 mA/mm for Si, respectively. In addition, $G_{m,max}$ (maximum transfer conductance) of sapphire, SiC, Si was 38, 50, 31 mS/mm, respectively, at T=500 K.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.3A
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• pp.195-202
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• 2005

The third generation cellular system requires the seamless macro/micro mobility support. Mobile IP provides a simple and scalable macro mobility solution but lacks the support for fast handoff control in micro-domain. However, A lot of micro-mobility protocols have been proposed to complement the Mobile IP capability by providing the fast, seamless, and local handoff control. Cellular If also provides the seamless mobility support in limited geographical area. But semi-soft handoff mechanism of Cellular IP produces the packet loss and the duplication problem due to the difference of propagation delay between the new path and the old path. In this paper, we present an efficient handoff mechanism in micro-domain. The proposed handoff mechanism uses the SCD (Suitable Cross Delay) in order to minimize the packet loss and the duplication problem during the handoff. Also, the proposed mechanism is verified by the performance evaluation through the NS-2 Simulation.

• Journal of Internet Computing and Services
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• v.13 no.3
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• pp.31-47
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• 2012

The mobile Virtual Private Network (MVPN) of Internet Engineering Task Force (IETF) is not designed to support NEwork MObility (NEMO) and is not suitable for real-time applications. Therefore, an architecture and protocol which supports VPN in NEMO are needed. In this paper, we proposed the cost-reduced secure mobility management scheme (CR-SeMMS) which is designed for real-time applications in conjunction with VPN and also which is based on the session initiation protocol (SIP). Our scheme is to support MVPN in NEMO, so that the session is well maintained while the entire network is moved. Further, in order to reduce the authentication delay time which considers as a delaying factor in hands-off operations, the signaling time which occurs to maintain the session is shortened through proposing the hands-off scheme adopting an authentication method based on HMAC based One Time Password (HOTP). Finally, our simulation results show the improvement of the average hands-off performance time between our proposed scheme and the existing schemes.

• Journal of KIISE:Computing Practices and Letters
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• v.16 no.6
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• pp.698-701
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• 2010

Recently, Vehicular Networks is being developed to provide variety of services such as email, ftp, and video streaming services. As IP mobility technology, Proxy Mobile IP is developed to provide these services for a VANET user. By adopting Proxy Mobile IPv6 (PMIPv6), Vehicular Networks can support IP mobility, but it may cause a proxy binding update (PBU) message when a vehicle moves from one MAG to another. In addition, if the density of vehicles on the road is high, significant PBU messages are generated. In this paper, we propose bulk PBU message to reduce signaling overhead by those PBU messages when a bunch of vehicles move from one MAG to another. When the vehicles move from one MAG to another, it generates only one bulk PBU message to update those vehicle's location. Through numerical and simulation results, we show that our proposed bulk registration reduces signaling overhead when the density of vehicles and the speed of them are high.