• Proceedings of the KAIS Fall Conference
• /
• 2004.11a
• /
• pp.277-279
• /
• 2004

$300^{\circ}C$ 소성 Pt/MoO3가 수소를 흡착후 탈착하는 속도를 측정하였다. 두가지 흡착 속도를 나타내는 Pt/MoO3 촉매에서 탈착량은 흡착량과 탈착 온도의 증가에 비례하는 것을 알 수 있었다. 또한 X-Ray Photoelectron Spectroscope(XPS) 결과로부터 Pt와 MoO3간의 활성점에 존재하는 Cl의 존재가 수소 이동 속도를 결정하는 것으로 판단되었다.

• Journal of the Korean Chemical Society
• /
• v.26 no.2
• /
• pp.81-87
• /
• 1982

The monooxo-bridged binuclear molybdenum(V) complexes, $Mo_2O_3(NCS)_4(Bipy)_2\;(Bipy = bipyridine),\;Mo_2O_3(NCS)-4(Phen)-2$ (Phen = 1,10-phenanthroline), and $Mo_2O_3(NCS)_4(Ox)_2(OxH)_2$ (Ox = oxinato and OxH = oxine) have been prepared. Their electronic and IR spectra, electric conductivity, and magnetic susceptibility were measured. From the results all of th complexes turned out to be electroneutral dimers with about 0.5 BM, and in the oxine complex, $Mo_2O_3(NCS)_2(Ox)_2(OxH)_2$, the oxine seems to bind partly as monodentate and partly as bidentate molecule.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.460-463
• /
• 2002

$MoO_3$ thin films were deposited on electrode and heater screen-printed alumina substrates in $O_2$ atmosphere by RF reactive sputtering using Molybdenum metal target. The deposition was performed at $300^{\circ}C$ with 350W of a forward power in an $Ar-O_2$ atmosphere. The working pressure was maintained at $3{\times}10^{-2}mtorr$ and all deposited films were annealed at $500^{\circ}C$ for 5hours. To investigate gas sensing characteristics of the addition doped $MoO_3$ thin film, Co, Ni and Pt were used as adding dopants. The sensing properties were investigated in tenn of gas concentration under exposure of reducing gases such as $H_2$, $NH_3$ and CO at optimum working temperature. Co-doped $MoO_3$ thin film shows the maximum 46.8% of sensitivity in $NH_3$ and Ni-doped $MoO_3$ thin film exhibits 49.7% of sensitivity in $H_2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.8
• /
• pp.705-710
• /
• 2003

MoO$_3$thin films were deposited on electrode of alumina substrates in $O_2$atmosphere by RF reactive sputtering using molybdenum metal target. The deposition was performed at 30$0^{\circ}C$ with 350 W of a forward power in an Ar-O$_2$atmosphere. The working pressure was maintained at 3$\times$10$^{-2}$ torr and all deposited films were annealed at 50$0^{\circ}C$ for 5 hours. The surface morphology of films was observed by using a SEM and crystalline phases were analyzed by using a XRD. To investigate gas sensing characteristics of the doped MoO$_3$thin film, Co, Ni and Pt were used as dopants. The sensing properties were investigated in term of gas concentration under exposure of reducing gases such as H$_2$, NH$_3$and CO at optimum working temperature. Co-doped MoO3 thin film shows the maximum 46.8 % of sensitivity in NH$_3$ and Ni-doped MoO$_3$thin film exhibits 49.7 % of sensitivity in H$_2$.

• Journal of Sensor Science and Technology
• /
• v.24 no.3
• /
• pp.151-154
• /
• 2015

The gas sensing characteristic of $MoS_2-MoO_2$ composite yolk-shell spheres were investigated. $MoO_3$-carbon composite spheres were prepared by ultrasonic spray pyrolysis of aqueous droplets containing Mo-source and sucrose in nitrogen, which were converted into $MoO_3$ yolk-shell spheres by heat treatment at $400^{\circ}C$ in air. Subsequently, $MoS_2-MoO_2$ composite yolk-shell spheres were prepared by the partial sulfidation of $MoO_3$. The $MoS_2-MoO_2$ composite yolk-shell spheres showed relatively low and irreversible gas sensing characteristics at < $200^{\circ}C$. In contrast, the sensor showed high and reversible response (S=resistance ratio) to 5 ppm $NO_2$ (S=14.8) at $250^{\circ}C$ with low cross-responses (S=1.17-2.13) to other interference gases such as ethanol, CO, xylene, toluene, trimethylamine, $NH_3$, $H_2$, and HCHO. The $MoS_2-MoO_2$ composite yolk-shell spheres can be used as reliable sensors to detect $NO_2$ in a selective manner.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.5 no.6
• /
• pp.558-561
• /
• 2004

The morphology of silica supported $MoO_{3}$ catalysts, which was prepared by impregnation of ammonium heptamolybdate(AHM) with various surface loadings up to 4 atoms $Mo/nm^{2}$, was studied using x-ray diffraction(XRD). All morphologies of silica supported $MoO_{3}$ appear to be thermodynamically driven. For high loaded catalysts there appeared three states: a sintered and well-dispersed hexagonal state at moderate temperature calcination($300^{\circ}C$), and a sintered orthorhombic state at high temperature calcination($500^{\circ}C$). Whereas the sintered orthorhombic phase is detected by XRD at loadings in excess of 1.1 atom $Mo/nm^{2}$, the well-dispersed hexagonal phase is not detected even until 4.0 $atomsMo/nm^{2}$. The higher apparent dispersion of the hexagonal phase may arise from some role of ammonia which results in a stronger $MoO_{3}-SiO_{2}$ surface interaction.

• Journal of the Korean Chemical Society
• /
• v.34 no.5
• /
• pp.452-459
• /
• 1990

A series of oxo-and sulfido-bridged molybdenum (V) complexes, Mo$_2$O$_4$L$_2$, Mo$_2$O$_3$L$_4$, Mo$_2$O$_2$S$_2$L$_2$, and Mo$_2$OS$_3$L$_2$ [L = bis(hydroxyethyl)dithiocarbamate] have been prepared. The complexes with bridging and terminal oxo groups have been synthesized by the reactions of (PyH)$_2$MoOCl$_5$ or MoCl$_5$ and ligand in water. One of the rest two complexes, in which bridging and terminal oxo groups have been replaced by sulfido in Mo$_2$O$_4^{2+}$ core, Mo$_2$O$_2$S$_2$L$_2$ have been prepared by addition of triphenylphosphine to a chloroform solution of Mo$_2$OS$_3$L$_2$. While, Mo$_2$OS$_3$L$_2$ is obtained from aqueous solution of (NH$_4$)$_2$MoS$_4$ and ligand in the presence of sodium dithionite. The complexes are identified by elemental analysis, and spectral data of IR, UV-vis, nmr, and mass. Also, the electrochemical behaviour for the complexes in dimethylsulfoxide has been investigated by the cyclic voltammograms.

• Journal of Powder Materials
• /
• v.23 no.4
• /
• pp.303-306
• /
• 2016

An optimum route to synthesize Ti-Mo system powders is investigated by analyzing the effect of the heat treatment atmosphere on the formation of the reaction phase by dehydrogenation and hydrogen reduction of ball-milled $TiH_2-MoO_3$ powder mixtures. Homogeneous powder mixtures with refined particles are prepared by ball milling for 24 h. XRD analysis of the heat-treated powder in a hydrogen atmosphere shows $TiH_2$ and $MoO_3$ peaks in the initial powders as well as the peaks corresponding to the reaction phase species, such as $TiH_{0.7}$, TiO, $MoO_2$, Mo. In contrast, powder mixtures heated in an argon atmosphere are composed of Ti, TiO, Mo and $MoO_3$ phases. The formation of reaction phases dependent on the atmosphere is explained by the partial pressure of $H_2$ and the reaction temperature, based on thermodynamic considerations for the dehydrogenation reaction of $TiH_2$ and the reduction behavior of $MoO_3$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.535-536
• /
• 2013

본 연구에서는 DC/RF co-sputtering공법을 통해 제작한 In-Mo-O 투명 Mo doping 농도 및 열처리 온도에 따른 전기적, 광학적, 구조적 특성을 분석하고, 최적화된 In-Mo-O 투명전극을 유기태양전지(OPVs)와 유기발광다이오드(OLED)에 적용하여 그 가능성을 평가하였다. Mo doping 농도는 co-sputtering 공정 중 MoO3에 인가되는 radio-frequency (RF) power를 변화시켜 조절되었으며, 투명전극의 광학적 특성 및 전기적 특성 향상을 위해 성막 공정 후 급속 열처리 공정을 온도 별로 진행하였다. In-Mo-O 투명 전극은 Mo 도핑 농도에 영향을 받음을 확인할 수 있었고, 최적화된 Mo doping 파워에서 성막한 In-Mo-O 박막은 급속 열처리 공정 후 면저항 24.57 Ohm/square, 투과도 81.57% (400~1,200 nm wavelength)를 나타내었다. Bulk hetero-junction 기반의 고효율 유기태양전지와 유기발광다이오드 적용하기 위해 본 연구에서 제작된 IMO 투명전극의 구조적 특성, 결정성 및 표면특성은 x-ray diffraction (XRD), atomic force microscopy(AFM), field effect scanning electron microscopy (FE-SEM), High-resolution transmission electron microscopy (HRTEM) 분석을 통해 진행하였다. In-Mo-O 투명 전극상에 제작된 OLEDs와 OPV는 reference ITO 전극에 제작된 OLEDs/OPV와 비교할 때 유사하거나 향상된 특성을 나타내었으며 이는 In-Mo-O 박막이 OLED/OPV용 투명 전극으로 적용이 가능함을 말해준다.

• Journal of the Korean institute of surface engineering
• /
• v.47 no.3
• /
• pp.104-108
• /
• 2014

To improve emission efficiency of organic light emitting devices (OLEDs), we fabricated the tandem OLED of ITO / 2-TNATA / NPB / SH-1: 3 vol.% BD-2 / Bphen / Liq / Al / $MoO_x$ (X nm) / 2-TNATA / NPB / SH-1: 3 vol.% BD-2 / Bphen / Liq / Al structure. And emission properties of single OLED and tandem OLED with $MoO_x$ thickness as charge generation layer (CGL) were measured. The current emission efficiency and quantum efficiency of tandem OLED with $MoO_x$ of 3 nm thickness were improved compare with single OLED from 7.46 cd/A and 5.39% to 22.57 cd/A and 11.76%, respectively. In case of thicker or thinner than $MoO_x$ of 3~5 nm, the current emission efficiency and quantum efficiency were decreased, because balance of electron and hole in emission layer was not matching. The driving voltage was increased from 8 V of single OLED to 15 V of tandem OLED by thickness increase of OLED. As a result, it was possible to improve the emission efficiency of OLEDs by optimized $MoO_x$ thickness.