• Journal of the Korean Ceramic Society
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• v.51 no.6
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• pp.605-611
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• 2014

$SrGd_{2-x}(MoO_4)_4:Er^{3+}/Yb^3$ phosphors with doping concentrations of $Er^{3+}$+ and $Yb^{3+}$ ($x=Er^{3+}+Yb^{3+}$, $Er^{3+}=0.05$, 0.1, 0.2, and $Yb^{3+}=0.2$, 0.45) were successfully synthesized by the cyclic microwave-modified sol-gel method, and their upconversion mechanism and spectroscopic properties have been investigated in detail. Well-crystallized particles showed a fine and homogeneous morphology with grain sizes of $2-5{\mu}m$. Under excitation at 980 nm, $SrGd_{1.7}(MoO_4)_4:Er_{0.1}Yb_{0.2}$ and $SrGd_{1.5}(MoO_4)_4:Er_{0.05}Yb_{0.45}$ particles exhibited a strong 525-nm emission band, a weak 550-nm emission band in the green region, and a very weak 655-nm emission band in the red region. The Raman spectra of the doped particles indicated the domination of strong peaks at higher frequencies of 1023, 1092, and $1325cm^{-1}$ and at lower frequencies of 223, 2932, 365, 428, 538, and $594cm^{-1}$ induced by the incorporation of the $Er^{3+}$+ and $Yb^{3+}$+ elements into the $Gd^{3+}$ site in the crystal lattice, which resulted in the unit cell shrinkage accompanying a new phase formation of the $[MoO_4]^{2-}$ groups.

• Journal of the Korean Chemical Society
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• v.56 no.5
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• pp.563-570
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• 2012

Solid acid Mo(VI)/$ZrO_2$ with 2-10% Mo(VI) was coated on honeycomb monoliths by impregnation method. These catalytic materials were characterized by BET, $NH_3$-TPD/n-butylamine back titration, PXRD and SEM techniques. Phenyl salicylate (Salol) was synthesized via transesterification of methyl salicylate and phenol over these catalytic materials. An excellent yield (91.0%) of salol was obtained under specific reaction conditions. The effect of poisoning of acid sites of the catalytic material by adsorbing different bases and its effect on total surface acidity, powder XRD phases and catalytic activity was studied. A triangular correlation between the surface acidity, powder XRD phases and catalytic activity of Mo(VI)/$ZrO_2$ was observed. The thermally regenerated catalytic material was reused repeatedly with a consistent high yield of salol.

• Applied Chemistry for Engineering
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• v.7 no.6
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• pp.1174-1180
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• 1996

Potassium hexatitanate whisker was effectively prepared with calcination and flux method by using industrial $TiO_2$, $K_2CO_3$ and $K_2MoO_4$ as the starting materials. When it was synthesized by the calcination method, the filtrate after boiling water treatment was required a neutralization, as the pH of filtrate was higher than 9. Because K component was very small, recovery of K component was not economically suitable. In case of flux method, flux was recovered 96.1% of Mo component and 91.8% of K component at $K_2MoO_4$, for 10th treatment in boiling water of 100ml to 10g.

• Journal of the Korean Applied Science and Technology
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• v.16 no.3
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• pp.205-210
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• 1999

The Mo(V) $di-{\mu}-oxo$ type $[Mo_2O_4(H_2O)_2L]Cl_2$ complexes(L: 4,4'-Diphenyl-2,2'-dipyridyl, 4,4'-Dimethyl-2,2'-dipyridyl, 4,7-Diphenyl-1,10-phenanthroline) have been prepared by the reaction of $[Mo_2O_4(H_2O)_6]^{2+}$ with a series of chelate ligands. These complexes are completed by two terminal oxygens arranged trans to one another and each ligand forms a chelate types. In $Mo_2O_4(H_2O)_2L$ two $H_2O$ coordinated at trans site of terminal oxgens. The prepared complexes have been characterized by elemental analysis, infrared spectra, electronic spectra, $^1H$ nuclear magnetic resonance spectra, and thermal analysis(TG-DTA). In the potential range -0.00V to -1.00V at scan rate of $50mVs^{-1}$, a cathodic peak at -0.83V ${\sim}$ -0.88V (vs SCE) and an anodic peak at -0.54V ${\sim}$ -0.88V (vs SCE) have been observed in aquous solution. The ratio of the cathodic to anodic current(Ipc/Ipa) is almost 2, we infer that redox is irreversible as dimer forms broken.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.86-87
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• 2002

Fe과 Mo이 교대로 정렬해 있는 이중 페로브스카이트 구조를 갖는 $A_{2-x}$FeMo $O_{6}$(A=Ca, Sr, Ba) 화합물들은 망간 산화물들에 비해 높은 $T_{c}$ (310-420K)의 준강자성 상태를 갖는다.$^{1.3}$ 이 화합물들은 F $e^{3+}$ (S=5/2) 와 M $o^{5+}$(S=1/2) 스핀들 사이의 커다란 반강자성 상호작용으로 이론적으로 4$\mu$$_{B}$/f.u.의 $M_{s}$ 값을 갖는다. A-site의 평균 이온 반경( $r_{A}$)이 증가함에 따라 이 화합물들의 결정구조는 Monoclinic(A=Ca)에서 Tetragonal(Sr)과 Cubic(Ba)으로 점진적으로 변화한다.$^3$(중략)(중략)략)략)

• Journal of IKEEE
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• v.23 no.4
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• pp.1128-1133
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• 2019

This paper proposed colored front panel glass for Building Integrated Photovoltaic (BIPV) systems using multi-layered thin films composed of transition metal oxide (TMO) layers. Molybdenum oxide (MoO₃) and tungsten oxide (WO₃) provided complementary and suitable materials in making effective interference of reflected light from interfaces with significant difference in refractive indices. A simple, fast, and cheap fabrication method was achieved by depositing the multi-layer films in a single thermal evaporator. Magenta colored glass with optical transmittance of more than 90% was achieved with MoO₃ (60nm)/WO₃(100nm) multi-layered film. This technology could play in a critical role in commercial BIPV system applications.

• Applied Chemistry for Engineering
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• v.27 no.5
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• pp.512-515
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• 2016

A new viologen derivative namely 1,1'-bis(3,4-dihydroxybutyl)-[4,4'-bipyridine]-1,1'-diium bromide (V-Pr-2OH) was synthesized and applied as a cathode buffer layer to inverted polymer solar cells (PSCs) based on the blend of PTB7 : $PC_{71}BM$. PSCs with the structure of ITO/V-Pr-2OH/PTB7 : $PC_{71}BM/MoO_3/Ag$ as the cathode buffer layer showed the power conversion efficiency (PCE) up to 7.28%, which is comparable to that of the PSCs with the structure of ITO/ZnO/PTB7 : $PC_{71}BM/MoO_3/Ag$ (7.44%) in the absence of V-Pr-2OH. This study demonstrates that a highly efficient PSCs without any high temperature heat treatment can be obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.281.1-281.1
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• 2016

Transition metal dichalcogenides (TMDCs) are promising layered structure materials for next-generation nano electronic devices. Many investigation on the FET device using TMDCs channel material have been performed with some integrated approach. To use TMDCs for channel material of top-gate thin film transistor(TFT), the study on high-k dielectrics on TMDCs is necessary. However, uniform growth of atomic-layer-deposited high-k dielectric film on TMDCs is difficult, owing to the lack of dangling bonds and functional groups on TMDC's basal plane. We demonstrate the effect of remote oxygen plasma pretreatment of large area synthesized few-layer MoSe2 on the growth behavior of Al2O3, which were formed by atomic layer deposition (ALD) using tri-methylaluminum (TMA) metal precursors with water oxidant. We investigated uniformity of Al2O3 by Atomic force microscopy (AFM) and Scanning electron microscopy (SEM). Raman features of MoSe2 with remote plasma pretreatment time were obtained to confirm physical plasma damage. In addition, X-ray photoelectron spectroscopy (XPS) was measured to investigate the reaction between MoSe2 and oxygen atom after the remote O2 plasma pretreatment. Finally, we have uniform Al2O3 thin film on the MoSe2 by remote O2 plasma pretreatment before ALD. This study can provide interfacial engineering process to decrease the leakage current and to improve mobility of top-gate TFT much higher.

• Korean Journal of Materials Research
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• v.29 no.5
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• pp.322-327
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• 2019

Hole carrier selective MoOx film is obtained by atomic layer deposition(ALD) using molybdenum hexacarbonyl[$Mo(CO)_6$] as precursor and ozone($O_3$) oxidant. The growth rate is about 0.036 nm/cycle at 200 g/Nm of ozone concentration and the thickness of interfacial oxide is about 2 nm. The measured band gap and work function of the MoOx film grown by ALD are 3.25 eV and 8 eV, respectively. X-ray photoelectron spectroscopy(XPS) result shows that the $Mo^{6+}$ state is dominant in the MoOx thin film. In the case of ALD-MoOx grown on Si wafer, the ozone concentration does not affect the passivation performance in the as-deposited state. But, the implied open-circuit voltage increases from $576^{\circ}C$ to $620^{\circ}C$ at 250 g/Nm after post-deposition annealing at $350^{\circ}C$ in a forming gas ambient. Instead of using a p-type amorphous silicon layer, high work function MoOx films as hole selective contact are applied for heterojunction silicon solar cells and the best efficiency yet recorded (21 %) is obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.387-392
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• 2019

$Dy^{3+}$ and $Eu^{3+}$-co-doped $La_2MoO_6$ phosphor thin films were deposited on sapphire substrates by radio-frequency magnetron sputtering at various growth temperatures. The phosphor thin films were characterized using X-ray diffraction (XRD), scanning electron microscopy, ultraviolet-visible spectroscopy, and fluorescence spectrometry. The optical transmittance, absorbance, bandgap, and photoluminescence intensity of the $La_2MoO_6$ phosphor thin films were found to depend on the growth temperature. The XRD patterns demonstrated that all the phosphor thin films, irrespective of growth temperatures, had a tetragonal structure. The phosphor thin film deposited at a growth temperature of $100^{\circ}C$ indicated an average transmittance of 85.3% in the 400~1,100 nm wavelength range and a bandgap energy of 4.31 eV. As the growth temperature increased, the bandgap energy gradually decreased. The emission spectra under ultraviolet excitation at 268 nm exhibited an intense red emission line at 616 nm and a weak emission line at 699 nm due to the $^5D_0{\rightarrow}^7F_2$ and $^5D_0{\rightarrow}^7F_4$ transitions of the $Eu^{3+}$ ions, respectively, and also featured a yellow emission band at 573 nm, resulting from the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of the $Dy^{3+}$ ions. The results suggest that $La_2MoO_6$ phosphor thin films can be used as light-emitting layers for inorganic thin film electroluminescent devices.