• Journal of the Korean institute of surface engineering
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• v.49 no.4
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• pp.368-375
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• 2016

MoN-Cu thin films were prepared to achieve appropriate properties of high hardness and low friction coefficient, which could be applied to automobile engine parts for reducing energy consumption as well as solving wear problems. Composite thin films of MoN-Cu have been deposited by various processes using multiple targets such as Mo and Cu. However, those deposition with multiple targets revealed demerits such as difficulties in exact control of composition and homogeneous deposition. This study is aiming for suggesting an appropriate process to solve those problems. A single alloying target of Mo-Cu (10 at%) was prepared by powder metallurgy methods of mechanical alloying (MA) and spar plasma sintering (SPS). Thin film of MoN-Cu was then deposited by magnetron sputtering using the single alloying target of Mo-Cu (10 at%). Properties of the resulting MoN-Cu thin film were examined and compared to those of MoN-Cu thin films prepared with double targets of Mo and Cu.

• Journal of the Korean institute of surface engineering
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• v.52 no.4
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• pp.227-232
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• 2019

Mo-N based coatings have been studied for enhancing mechanical characteristics of thin films. In the case of Mo-X-N coatings, the microstructure and mechanical properties can be affected by the addition of the third element. In this work, Mo-Cu-N coatings were successfully fabricated with varying the Cu content from 4.5 at% to 31 at% by the co-sputtering method. Thus, properties of the coatings were analyzed by EDS, SEM, XRD, AFM, nano indentation and scratch test techniques. From observed results, MoxN bonds were made in a nitrogen atmosphere and Cu elements were present at grain boundaries. In addition, coatings with the Cu content above 14 at% had a Cu3N peak in the XRD results. Thus, it is suggested that the formation of Cu3N phase affected the microstructure and mechanical properties of Mo-Cu-N coatings. Mechanical properties of Mo-Cu-N coatings were found to be relatively better at Cu content of about 12 at%.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.73-74
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• 2015

본 연구에서는 상호간의 고용도가 없는 Mo, Cu 재료의 합금화가 용이하도록 기계적 합금화법(Mechanical Alloying)을 이용하여 Mo-Cu 합금분말을 제조하였고, 준안정상태의 구조의 유지가 가능한 방전 플라즈마 소결법(Spark Plasma Sintering)을 이용하여 합금타겟을 제작하였다. Mo-Cu 박막을 제작하기 위해서 합금타겟을 이용하였고 스퍼터링 공정을 진행하여 박막을 제작하였다. 그 결과 Mo-10wt%Cu 단일타겟을 이용하여 제작한 박막의 경우 Ar : N 분위기에서 27.7GPa 로 가장 높은 경도값을 가지는 것을 확인하였다. 또한 Mo-5wt%Cu 단일타겟을 이용하여 Ar : N 분위기에서 제작한 박막은 건식조건에서의 마찰계수값이 0.69 로 가장 낮은 것을 확인할 수 있었으며 윤활조건(GF4)에서는 Mo-10wt%Cu 단일타겟을 이용하여 Ar : N 분위기에서 제작한 박막이 0.56 으로 가장 낮았다.

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.143-150
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• 1997

In this study, doffusion barrier properties of 1000 $\AA$ thick molybdenum compound(Mo, Mo-N, $MoSi_2$, Mo-Si-N) films were investigated using sheet resistance measurement, X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS), Scanning electron mircoscopy(SEM), and Rutherford back-scattering spectrometry(RBS). Each barrier material was deposited by the dc magnetron sputtering and annealed at 300-$800^{\circ}C$ for 30 min in vacuum. Mo and MoSi2 barrier were faied at low temperatures due to Cu diffusion through grain boundaries and defects in Mo thin film and the reaction of Cu with Si within $MoSi_2$, respectively. A failure temperature could be raised to $650^{\circ}C$-30 min in the Mo barrier system and to $700^{\circ}C$-30 min in the Mo-silicide system by replacing Mo and $MoSi_2$ with Mo-N and Mo-Si-N, respectively. The crystallization temperature in the Mo-silicide film was raised by the addition of $N_2$. It is considered that not only the $N_2$, stuffing effect but also the variation of crystallization temperature affects the reaction of Cu with Si within Mo-silicide. It is found that Mo-Si-N is the more effective barrier than Mo, $MoSi_2$, or Mo-N to copper penetraion preventing Cu reaction with the substrate for $30^{\circ}C$min at a temperature higher than $650^{\circ}C$.

• Journal of Korean Vacuum Science & Technology
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• v.1 no.1
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• pp.30-37
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• 1997

Interactions of Cu films with Si substrates separated by thin layers of molybdenum and molybdenum nitride were investigated in the viewpoint of diffusion barrier to copper. the diffusion barrier behavior of the layers was studied as functions of deposition and annealing conditions by cross-sectional transmission electron microscopy and Nomarski microscopy. the layers deposited at $N_2$ gas ratios of 0.4 and 0.5 exhibited good diffusion barrier behaviors up to $700^{\circ}C$, mainly due to the phase transformation of molybdenum to $\gamma$-Mo$_2$N phase. The increase in the N gas ratio in deposition elevates the lower limit of barrier failure temperature. Futhermore, amorphous molybdenum nitride films deposited at 20$0^{\circ}C$ and 30$0^{\circ}C$ did not fail, while the crystalline $\gamma$-Mo$_2$N films deposited at 40$0^{\circ}C$ and 50$0^{\circ}C$ showed signs of interlayer interactions between Cu and Si after annealing at 75$0^{\circ}C$ for 30 minutes. Therefore, the amorphous nature of the molybdenum nitride layer enhanced its ability to reduce Cu diffusion and its stability as a diffusion barrier at elevated temperatures.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.484-488
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• 2007

Mo(Ti) alloy and pure Cu thin films were subsequently deposited on $SiO_2-coated$ Si wafers, resulting in $Cu/Mo(Ti)/SiO_2$ structures. The multi-structures have been annealed in vacuum at $100-600^{\circ}C$ for 30 min to investigate the outdiffusion of Ti to Cu surface. Annealing at high temperature allowed the outdiffusion of Ti from the Mo(Ti) alloy underlayer to the Cu surface and then forming $TiO_2$ on the surface, which protected the Cu surface against $SiH_4＋NH_3$ plasma during the deposition of $Si_3N_4$ on Cu. The formation of $TiO_2$ layer on the Cu surface was a strong function of annealing temperature and Ti concentration in Mo(Ti) underlayer. Significant outdiffusion of Ti started to occur at $400^{\circ}C$ when the Ti concentration in Mo(Ti) alloy was higher than 60 at.%. This resulted in the formation of $TiO_2/Cu/Mo(Ti)\;alloy/SiO_2$ structures. We have employed the as-deposited Cu/Mo(Ti) alloy and the $500^{\circ}C-annealed$ Cu/Mo(Ti) alloy as gate electrodes to fabricate TFT devices, and then measured the electrical characteristics. The $500^{\circ}C$ annealed Cu/Mo($Ti{\geq}60at.%$) gate electrode TFT showed the excellent electrical characteristics ($mobility\;=\;0.488\;-\;0.505\;cm^2/Vs$, on/off $ratio\;=\;2{\times}10^5-1.85{\times}10^6$, subthreshold = 0.733.1.13 V/decade), indicating that the use of Ti-rich($Ti{\geq}60at.%$) alloy underlayer effectively passivated the Cu surface as a result of the formation of $TiO_2$ on the Cu grain boundaries.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.95-98
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• 2007

In this paper, the magnetic properties and the annealing behavior of spin valve structures with Mo(MoN) underlayers were studied for various underlayer thickness. The spin valve structure was Si substrate/Mo(MoN)$(t{\AA})/NiFe(21{\AA})/CoFe(28{\AA})/Cu(22{\AA})/CoFe(18{\AA})/IrMn(65{\AA})/Ta(25 {\AA})$. Mo and MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The deposition rate of the MoN thin film was decreased and tile resistivity of the MoN thin films were increased as the $N_2$ gas flow was increased. The variations of MR ratio and magnetic exchange coupling field of spin valve structure were smaller with MoN underlayers than that with Mo underlayers up to thickness of $51{\AA}$. MR ratio of spin valves with Mo underlayers was 2.86% at room temperature and increased up to 2.91 % after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 2.16%. The MR ratio of spin valves structure with MoN underlayers for $N_2$ gas flow 1 sccm was 5.27% at room temperature and increased up to 5.56% after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 4.9%.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.05a
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• pp.139-145
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• 2005

In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.39-43
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• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1397-1399
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• 2002

Effects of bottom electrode materials (Al, Cu, Ti, and Mo), included in film bulk acoustic resonators (FBARs), on the orientation of piezoelectric AlN thin films and the frequency response characteristic of resonators were investigated. The texture coefficient (TC) for (002) orientation, crystallite size, full width half maximum (FWHM), and surface roughness of deposited AlN films were measured for the various bottom electrodes. The return tosses estimated from the frequency responses of fabricated resonators were also compared. Experimental results showed that the difference of lattice constant and thermal expansion coefficient between the bottom electrode and the AlN film were the most important factors for achieving a high performance resonator.