• Journal of the Korean institute of surface engineering
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• v.49 no.4
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• pp.368-375
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• 2016

MoN-Cu thin films were prepared to achieve appropriate properties of high hardness and low friction coefficient, which could be applied to automobile engine parts for reducing energy consumption as well as solving wear problems. Composite thin films of MoN-Cu have been deposited by various processes using multiple targets such as Mo and Cu. However, those deposition with multiple targets revealed demerits such as difficulties in exact control of composition and homogeneous deposition. This study is aiming for suggesting an appropriate process to solve those problems. A single alloying target of Mo-Cu (10 at%) was prepared by powder metallurgy methods of mechanical alloying (MA) and spar plasma sintering (SPS). Thin film of MoN-Cu was then deposited by magnetron sputtering using the single alloying target of Mo-Cu (10 at%). Properties of the resulting MoN-Cu thin film were examined and compared to those of MoN-Cu thin films prepared with double targets of Mo and Cu.

• Journal of the Korean institute of surface engineering
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• v.52 no.4
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• pp.227-232
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• 2019

Mo-N based coatings have been studied for enhancing mechanical characteristics of thin films. In the case of Mo-X-N coatings, the microstructure and mechanical properties can be affected by the addition of the third element. In this work, Mo-Cu-N coatings were successfully fabricated with varying the Cu content from 4.5 at% to 31 at% by the co-sputtering method. Thus, properties of the coatings were analyzed by EDS, SEM, XRD, AFM, nano indentation and scratch test techniques. From observed results, MoxN bonds were made in a nitrogen atmosphere and Cu elements were present at grain boundaries. In addition, coatings with the Cu content above 14 at% had a Cu3N peak in the XRD results. Thus, it is suggested that the formation of Cu3N phase affected the microstructure and mechanical properties of Mo-Cu-N coatings. Mechanical properties of Mo-Cu-N coatings were found to be relatively better at Cu content of about 12 at%.

• Journal of the Korean institute of surface engineering
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• v.53 no.6
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• pp.343-350
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• 2020

The degradation of mechanical properties of nitride coatings to steel substrates is one of the main challenges for industrial applications. In this study, plasma nitriding treatment was used in order to increase the mechanical properties of Mo-Cu-N coating to the H13 tool steel. The nanostructured Mo-Cu-N coating was deposited using pulsed DC magnetron sputtering method with a single alloy Mo-Cu target. Mechanical properties of MoN-Cu coated samples after nitriding were found to be relatively better than non-nitrided MoN-Cu coating.

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.143-150
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• 1997

In this study, doffusion barrier properties of 1000 $\AA$ thick molybdenum compound(Mo, Mo-N, $MoSi_2$, Mo-Si-N) films were investigated using sheet resistance measurement, X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS), Scanning electron mircoscopy(SEM), and Rutherford back-scattering spectrometry(RBS). Each barrier material was deposited by the dc magnetron sputtering and annealed at 300-$800^{\circ}C$ for 30 min in vacuum. Mo and MoSi2 barrier were faied at low temperatures due to Cu diffusion through grain boundaries and defects in Mo thin film and the reaction of Cu with Si within $MoSi_2$, respectively. A failure temperature could be raised to $650^{\circ}C$-30 min in the Mo barrier system and to $700^{\circ}C$-30 min in the Mo-silicide system by replacing Mo and $MoSi_2$ with Mo-N and Mo-Si-N, respectively. The crystallization temperature in the Mo-silicide film was raised by the addition of $N_2$. It is considered that not only the $N_2$, stuffing effect but also the variation of crystallization temperature affects the reaction of Cu with Si within Mo-silicide. It is found that Mo-Si-N is the more effective barrier than Mo, $MoSi_2$, or Mo-N to copper penetraion preventing Cu reaction with the substrate for $30^{\circ}C$min at a temperature higher than $650^{\circ}C$.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.683-690
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• 1996

In this study, the diffusion barrier properties of $1000 \AA$ thick molybdenum compounds (Mo, Mo-N, $MoSi_2$, Mo-Si-N) were investigated using sheet resistance measurements, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM), and Rutherford backscattering spectrometry (RBS). Each barrier material was deposited by the dc magnetron sputtering, and annealed at 300-$800^{\circ}C$ for 30min in vacuum. Mo and $MoSi_2$ barrier were failed at low temperature due to Cu diffusion through grain bound-aries and defects of Mo thin film and the reaction of Cu with Si within $MoSi_2$ respectively. A failure temperature could be raised to $650^{\circ}C$-30min in the Mo barrier system and to $700^{\circ}C$-30min in the Mo-silicide system by replacing Mo and $MoSi_2$ with Mo-N and Mo-Si-N, respectively. The crystallization temperature in the Mo-silicide film was raised by the addition of $N_2$. It is considered that not only the N, stuffing effect but also the variation of crystallization temperature affects the reaction of Cu with Si within Mo-silicide. It was found that Mo-Si-N is more effective barrier than Mo, $MoSi_2$, or Mo-N to copper penetration preventing Cu reaction with the substrate for 30min at a temperature higher than $650^{\circ}C$.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.05a
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• pp.139-145
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• 2005

In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.39-43
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• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

• Current Photovoltaic Research
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• v.10 no.2
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• pp.39-48
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• 2022

A Se-containing Cu/SnSe₂/ZnSe precursor was employed to introduce S to the precursor to form Cu₂ZnSn(S,Se)₄ (CZTSSe) film. The morphology of CZTSSe films strongly varied with two different pre-annealing environments: S and N₂. The CZTSSe film with S pre-annealing showed a dense morphology with a smooth surface, while that with N₂ pre-annealing showed a porous film with a plate-shaped grains on the surface. CuS and Cu₂Sn(S,Se)₃ phases formed during the S pre-annealing stage, while SnSe and Cu₂SnSe₃ phases formed during the N₂ pre-annealing stage. The SnSe phase formed during N₂ pre-annealing generated SnS₂ phase that had plate shape and severely aggravated the morphology of CZTSSe film. The power conversion efficiency of the CZTSSe solar cell with S pre-annealing was low (1.9%) due to existence of Zn(S.Se) layer between CZTSSe and Mo substrate. The results indicated that S pre-annealing of the precursor was a promising method to achieve a good morphology for large area application.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.06a
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• pp.13-13
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• 2001

현재 초고속 가공 공구의 국내 시장은 150억원이며 향후 3년 내에 1500억원으로 급성 장활 전망이다. 무윤활 초고속 가공을 실현하기 위해서는 윤활특성이 우수한 초고경도 코팅의 개발이 필요하며 이를 통해 기계설비의 수명향상과 폐유문제 해결을 기대할 수 있다. 기존의 고체윤활 코팅은 초고경도 코팅의 상부에 $MoS_2$, Graphite 등 윤활성 박막을 합성하였으나, 이들은 Hexagonal 구조의 연질 박막이며 수분이 존재하는 대기중에서는 윤활 및 내마모 특성이 급격히 저하된다. 환경친화 대체소재 개발의 일원으로 TiN, ZrN 박막 등이 이미 개발되었고 기계적 특성이 우수하여 널리 응용되고 있으나 아직 경도(약 20GPa 내외) 및 윤활성의 한계 (마찰계수 $\mu=O.6$)를 극복하지 못하고 있다. TiN박막 위의 Cu의 첨가는 TiN의 구조와 성질을 크게 변화시키는 것으로 알려져 있다. 따라서 본 연구에서는 TiN 기지 위에 Cu를 도핑함으로써 경도의 상승을 통환 내구력의 향상과 마찰계수의 감소를 통한 윤활성의 향상을 보고자하였다. TiN합성의 안정화를 위하여 magnetron sputtering과 arc ion pIatingd을 병용한 hybrid 공정을 이용하였다. Cu첨가에 따른 결정 성장 거동의 변화를 보기 위해 XRD 분석을 실행하였고, EDS 분석을 통해 Cu target 전류밀도에 의한 기지내의 Cu의 함량변화를 고찰하였으며, 경도 및 윤활특성을 고찰하기 위해서 경도 시험과 마모 시험(ball-on disc type test)를 하였다.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.95-98
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• 2007

In this paper, the magnetic properties and the annealing behavior of spin valve structures with Mo(MoN) underlayers were studied for various underlayer thickness. The spin valve structure was Si substrate/Mo(MoN)$(t{\AA})/NiFe(21{\AA})/CoFe(28{\AA})/Cu(22{\AA})/CoFe(18{\AA})/IrMn(65{\AA})/Ta(25 {\AA})$. Mo and MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The deposition rate of the MoN thin film was decreased and tile resistivity of the MoN thin films were increased as the $N_2$ gas flow was increased. The variations of MR ratio and magnetic exchange coupling field of spin valve structure were smaller with MoN underlayers than that with Mo underlayers up to thickness of $51{\AA}$. MR ratio of spin valves with Mo underlayers was 2.86% at room temperature and increased up to 2.91 % after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 2.16%. The MR ratio of spin valves structure with MoN underlayers for $N_2$ gas flow 1 sccm was 5.27% at room temperature and increased up to 5.56% after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 4.9%.