• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.4
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• pp.21-27
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• 2009

In this work, Er-silicided SB-SOI nMOSFET and Pt-silicided SB-SOI pMOSFET have been fabricated to investigate the current-voltage characteristics of Schottky barrier SOI nMOS and pMOS at elevated temperature. The dominant current transport mechanism of SB nMOS and pMOS is discussed using the measurement results of the temperature dependence of drain current with gate voltages. It is observed that the drain current increases with the increase of operating temperature at low gate voltage due to the increase of thermal emission and tunneling current. But the drain current is decreased at high gate voltage due to the decrease of the drift current. It is observed that the ON/Off current ratio is decreased due to the increased tunneling current from the drain to channel region although the ON current is increased at elevated temperature. The threshold voltage variation with temperature is smaller and the subthreshold swing is larger in SB-SOI nMOS and pMOS than in SOI devices or in bulk MOSFETs.

• Journal of the Korean Chemical Society
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• v.12 no.4
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• pp.184-189
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• 1968

Molybdenum chelate compounds have been prepared as new compounds; $MoO(CNS)_3{\cdot}2C_{12}H_8N_2,\;MoO(CNS)_3{\cdot}C_{10}H_8N_2$ and $MoO(CNS){\cdot}2C_9H_6ON$. Properties and configuration of the complexes were studied by chemical and physical method.

• Journal of the Korean Chemical Society
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• v.39 no.3
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• pp.191-197
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• 1995

The reactions of [${Mo(NO)_2Cl_2}_n$] with unidentate ligands in $CH_2Cl_2$ solvent afforded monomeric complexes [$Mo(NO)_2L_2Cl_2$]. $[Mo(NO)_2L_4](ClO_4)_2$ was obtained by reaction of unidentate with $[Mo(NO)_2L_2Cl_2]$ in aceton solvent. 4-Dimethylaminopyridine(dmap), pyridine(py), and isoquinoline(isoq) were used as coordinating ligands. These dinitrosylmolybdenum complexes are prepared and characterized by elemental analysis, $^1H$ NMR, infrared, and UV-Visible spectroscopy. The infrared spectra indicate that the NO groups occupy cis-positions of the octahedral.

• Bulletin of the Korean Chemical Society
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• v.19 no.11
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• pp.1211-1216
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• 1998

Bis(diethyldithiocarbamato)ioxomolybdenum(VI), cis-MoO2(S2CNEt2)2, 1, reacted with chlorotrimethylsilane (Me33SiCl) to give a seven-coordinate, pentagonal bipyramidal complex MoOC12(S2CN]Et2)2, 3, in which the oxo ligand is trans to the chloride ligand and the two chloride ligands are mutually cis. The monooxo molybdenum complex bis(diethyidithiocarbamato)oxomolybdenum(IV), MoO(S2CNEt2)2, 2, reacted with phenyl isocyanate (PhNCO) to give an Mo dimer MO2{μ-N(CONPh)Ph}(μ-NPh)(NPh)2(S2CNEt2)2, 4, which contains an Mo-Mo bond, two diethyldithiocarbamato ligands, two terminal imido (NPh) ligands, and two bridging hnido (NPh) ligands. One of the two bridging NPh ligands seemed to have been attacked by the electrophilic phenyl isocyanate carbon, which suggests that the bridging imido NPh ligand is more nucleophilic than the terminal one. Crystallographic data for 3: monoclinic space group P21/c, a=8.908(l) Å, b=17.509(3) Å, c=12.683(2) Å, β=110.15(1)°, Z=4, R(wR2)=0.0611(0.1385). Crystallographic data for 4-THF: orthorhombic space group P212121, a=17.932(4) Å, b=22.715(5) Å, c=11.802(3) Å, Z=4, R(wR2)=0.0585(0.1286).

• Journal of the Semiconductor & Display Technology
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• v.22 no.3
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• pp.46-51
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• 2023

We investigated the MoS₂ thin film layer by thermolytic deposition and applied it to the silicon solar cells. MoS₂ thin films were made by two methods of dipping and spin coating of (NH₄)₂MoS₄ precursor solution. We implemented two types of substrates of microtextured and nano-microtextured 6-in. Si pn junction wafers. The fabricated MoS₂ thin film layer was analyzed, and solar cells were fabricated by applying the standard silicon solar cell process. The MoS₂ thin film layer of sulfur-deficient form was deposited on the n-type emitter layer, and electrons, which are minority carriers, were well transported at the interface and exhibited photovoltaic solar cell characteristics. The cell efficiencies were achieved at 5% for microtextured wafers and 2.56% for nano-microtextured wafers.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.152-152
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• 2006

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.264-264
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• 2005

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1998.05a
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• pp.104-105
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• 1998

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.10a
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• pp.63-63
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• 2006

• Tribology and Lubricants
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• v.16 no.6
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• pp.409-414
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• 2000

The friction and wear behaviors of MoS$_2$ coatings were investigated by using a pin and disk type tester. The experiment was conducted by using silicon nitride as pin material and MoS$_2$-on-bearing steel as disk material under different operating conditions that include linear sliding velocities in the range of 22-66 ㎜/sec, normal loads varying from 9.8 N to 29.4 N, corresponding to maximum contact pressures of 1.18-2.83 GPa and atmospheric conditions of high vacuum, medium vacuum, ambient air. The results showed that low friction coefficient of the coating has been identified in high vacuum and that friction coefficient and wear volume increased with increasing normal load. Also at high load conditions, the friction coefficient and wear volume increased with increasing sliding velocity.