• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.254-254
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• 2016

Tin dioxide (SnO2) thin film is one of the most important n-type semiconducting materials having a high transparency and chemical stability. Due to their favorable properties, it has been widely used as a base materials in the transparent conducting substrates, gas sensors, and other various electronic applications. Up to now, SnO2 thin film has been extensively studied by a various deposition techniques such as RF magnetron sputtering, sol-gel process, a solution process, pulsed laser deposition (PLD), chemical vapor deposition (CVD), and atomic layer deposition (ALD) [1-6]. Among them, ALD or plasma-enhanced ALD (PEALD) has recently been focused in diverse applications due to its inherent capability for nanotechnologies. SnO2 thin films can be prepared by ALD or PEALD using halide precursors or using various metal-organic (MO) precursors. In the literature, there are many reports on the ALD and PEALD processes for depositing SnO2 thin films using MO precursors [7-8]. However, only ALD-SnO2 processes has been reported for halide precursors and PEALD-SnO2 process has not been reported yet. Herein, therefore, we report the first PEALD process of SnO2 thin films using SnCl4 and oxygen plasma. In this work, the growth kinetics of PEALD-SnO2 as well as their physical and chemical properties were systemically investigated. Moreover, some promising applications of this process will be shown at the end of presentation.

• 한국자기학회지
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• 제9권2호
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• pp.111-120
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• 1999

RF-마그네트론 스퍼터법으로 제조된 200~1200$\AA$의 Co82Zr6Mo12박막을 회전자장 중에서 열처리할 때 박막의 미세구조 및 표면형상의 변화에 따른 전자기적 특성을 조사하였다. 박막의 두께가 증가할수록 보자력은 감소하는 경향을 보였으나, 포화자화 값의 변화는 나타나지 않았다. 열처리 온도가 30$0^{\circ}C$까지 증가함에 따라 보자력은 박막내부 잔류응력의 감소 및 표면조도의 감소로 인해 감소하였고, 40$0^{\circ}C$에서는 부분적인 결정립성장에 의해 증가하였다. 포화자화 값은 열처리 온도 20$0^{\circ}C$까지 변화를 보이지 않고, 300 및 40$0^{\circ}C$에서는 7.4kG에서 8.0kG로 증가하였는바, 이는 박막내의 미세 Co입자의 석출 및 성장에 기인하였다. 전기비저항은 열처리 온도가 증가함에 따라 감소하였으며, 자기저항값은 거의 0cm에 가까운 음의 값을 보였다. 주파수 변화에 따른 박막의 유효투자율은 30$0^{\circ}C$ 열처리시 1200으로 최대값을 나타냈다. 이상에서 박막을 실제적인 자기저항 헤드의 바이어스층으로 응용을 고려시, 최적 열처리조건은 400Oe의 회전자장 중 30$0^{\circ}C$에서 1시간 열처리할 때로 나타났다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.73-73
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• 2000

안티퓨즈 소자는 프로그램 가능한 절연층의 상하 각각에 금속층이나 다결정 실리콘 등의 전도 가능한 전극으로 구성된다. 프로그램은 상하 전극간에 임계전압을 가했을 때 일어나게 되며 이때 절연층이 파괴되므로 비가역적이어서 재사용은 불가능하게 된다. 안티퓨즈 소자는 이러한 프로그램 특성으로 인하여 메모리 소자를 이용한 스위치 보다 속도나 집적도 면에서 우수하다. FPGAsdp 사용되는 안티퓨즈 소자는 집적도의 향상과 적정 절열파괴전압 구현을 위해 절연막의 두께를 감소시키는 것이 바람직하다. 그러나 두께나 감소될 경우 바닥전극의 hillock에 큰 영향을 받게 되며, 그로 인해 절연막의 두께를 감소시키는 것는 한계가 있는 것으로 보고되어 있다. 본 논문에서는 낮은 구동 전압에서 동작하고 안정된 on/pff 상태를 갖는 Al/TiO2-SiO2/Mo 형태의 안티퓨즈 소자를 제안하였다. 만들어진 antifuse cell은 0.6cm2 크기로 약 300개의 샘플을 제작하여 측정하였다. 비저항이 6-9 $\Omega$-cm인 P형의 실리콘 웨이퍼에 RF 마그네트론 스퍼터링(RF magnetron sputtering) 방법으로 하부전극인 Mo를 3000 증착하였다. SiO2는 안티퓨즈에서 완충막의 역할을 하며 구조적으로 antifuse cell을 완전히 감싸고 있는 형태로 제작되었다. 완충막 구조를 만들기 dln해 일반적인 포토리소그라피(Photo-lithography)작업을 거처 형성하였다. 형성된 hole의 크기는 5$mu extrm{m}$$\times$5$\mu\textrm{m}$ 이었다. 완충막이 형성된 기판위에 안티퓨즈 절연체인 SiO2를 PECVD 방식으로 100 증착하였다. 그 후 이중 절연막을 형성시키기 위해 LPCVD를 이용하여 TiO2를 150 증착시켰다. 상부 전극은 thermal evaporation 방식으로 Al을 250nm 증착하여Tejk. 하부전극으로 사용된 Mo 금속은 표면상태가 부드럽고 녹는점이 높은 매우 안정된 금속으로, 표면위에 제조된 SiO2의 특성을 매우 안정되게 유지시켰다. 제안된 안티푸즈는 이중절연막을 증착함으로서 전체적인 절연막의 두께를 증가시켜 바닥전극의 hillock의 영향을 적게 받아 안정성을 유지할 수 있도록 하였다. 또한, 두 절연막 사이의 계면 반응에 의해 SiO2 막을 약화시켜 절연막의 두께가 두꺼워졌음에도 기존의 SiO2 절연막의 절연 파괴 전압 및 누설 전류오 비교되는 특성을 가졌다. 이중막을 구성하고 있는 안티퓨즈의 ON-저항이 단일막과 비교해 비슷한 것을 볼 수 잇는데, 그 이유는 TiO2에 포함된 Ti가 필라멘트에 포함되어 있어 필라멘트의 저항을 감소시켰기 때문으로 사료된다. 결국 이중막을 구성시 ON-저항 증가에 의한 속도 저하 요인은 없다고 할 수 있다. 5V의 절연파괴 시간을 측정한느 TDDB 테스트 결과 1.1$\times$103 year로 기대수치인 수십 년보다 높아 제안된 안티퓨즈의 신뢰성을 확보 할 수 있었다. 제안된 안티퓨즈의 이중 절연막의 두께는 250 이고 프로그래밍 전압은 9.0V이고, 약 65$\Omega$의 on 저항을 얻을수 있었다.

• 대한금속재료학회지
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• 제47권2호
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• pp.129-137
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• 2009

Corrosion behaviors of TiN coated dental casting alloys have been researched by using various electrochemical methods. Three casting alloys (Alloy 1: 63Co-27Cr-5.5Mo, Alloy 2: 63Ni-16Cr-5Mo, Alloy 3: 63Co-30Cr-5Mo) were prepared for fabricating partial denture frameworks with various casting methods; centrifugal casting(CF), high frequency induction casting(HFI) and vacuum pressure casting(VP). The specimens were coated with TiN film by RF-magnetron sputtering method. The corrosion behaviors were investigated using potentiostat (EG&G Co, 263A. USA) in 0.9% NaCl solution at $36.5{\pm}1^{\circ}C$. The corrosion morphologies were analyzed using FE-SEM and EDX. Alloy 1 and Alloy 2 showed the ${\alpha}-Co$ and ${\varepsilon}-Co$ phase on the matrix, and it was disappeared in case of TiN coated Alloy 1 and 2. In the Alloy 3, $Ni_2Cr$ second phases were appeared at matrix. Corrosion potentials of TiN coated alloy were higher than that of non-coated alloy, but current density at passive region of TiN coated alloy was lower than that of non-coated alloy. Pitting corrosion resistances were increased in the order of centrifugal casting, high frequency induction casting and vacuum pressure casting method from cyclic potentiodynamic polarization test.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.86.2-86.2
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• 2015

Cu2ZnSn(S,Se)4 thin film solar cells have been fabricated using sputtered Cu/Sn/Zn metallic precursors on Mo coated sodalime glass substrate without using a toxic H2Se and H2S atmosphere. Cu/Sn/Zn metallic precursors with various thicknesses were prepared using DC magnetron sputtering process at room temperature. As-deposited metallic precursors were sulfo-selenized inside a graphite box containing S and Se pellets using rapid thermal processing furnace at various sulfur to selenium (S/Se) compositional ratio. Thin film solar cells were fabricated after sulfo-selenization process using a 65 nm CdS buffer, a 40 nm intrinsic ZnO, a 400 nm Al doped ZnO, and Al/Ni top metal contact. Effects of sulfur to selenium (S/Se) compositional ratio on the microstructure, crystallinity, electrical properties, and cell efficiencies have been studied using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscope, I-V measurement system, solar simulator, quantum efficiency measurement system, and time resolved photoluminescence spectrometer. Our fabricated Cu2ZnSn(S,Se)4 thin film solar cell shows the best conversion efficiency of 9.24 % (Voc : 454.6 mV, Jsc : 32.14 mA/cm2, FF : 63.29 %, and active area : 0.433 cm2), which is the highest efficiency among Cu2ZnSn(S,Se)4 thin film solar cells prepared using sputter deposited metallic precursors and without using a toxic H2Se gas. Details about other experimental results will be discussed during the presentation.

• 전기학회논문지
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• 제67권10호
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• pp.1370-1374
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• 2018

A heterojunction $SnS_2/p-Si$ photodetector was fabricated by RF magnetron sputtering system. $SnS_2$ was formed with 2-inch $SnS_2$ target. Al was applied as the front and the back metal contacts. Rapid thermal process was conducted at $500^{\circ}C$ to enhance the contact quality. 2D material such as $SnS_2$, MoS2 is very attractive in various fields such as field effect transistors (FET), photovoltaic fields such as photovoltaic devices, optical sensors and gas sensors. 2D material can play a significant role in the development of high performance sensors, especially due to the advantages of large surface area, nanoscale thickness and easy surface treatment. Especially, $SnS_2$ has a indirect bandgap in the single and bulk states and its value is 2 eV-2.6 eV which is considerably larger than that of the other 2D material. The large bandgap of $SnS_2$ offers the advantage for the large on-off current ratio and low leakage current. The $SnS_2/p-Si$ photodetector clearly shows the current rectification when the thickness of $SnS_2$ is 80 nm compared to when it is 135 nm. The highest photocurrent is $19.73{\mu}A$ at the wavelength of 740 nm with $SnS_2$ thickness of 80 nm. The combination of 2D materials with Si may enhance the Si photoelectric device performance with controlling the thickness of 2D layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.386-386
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• 2011

탄소나노튜브는 큰 길이 대 직경 비와 뛰어난 전기적 특성으로 인해 차세대 전계 방출 소자로 주목 받고 있다. 실질적인 전계방출 디스플레이로의 응용을 위한 대면적 제작과 유리 기판 사용을 위해 이용되었던 페이스트(paste)법은 높은 전기장 하에서 장시간 전계방출시 탄소나노튜브 전계방출원과 페이스트(paste)간의 낮은 접착력 때문에 발생하는 탄소나노튜브의 탈루현상(omission)과 유기물질(organic paste)에서 발생하는 탈기체(out-gassing) 문제점이 있었다. 최근 이런 문제점을 개선하기 위해 유기물질(organic paste)를 대체하여 금속바인더(metal binder) 물질을 사용한 결과들이 보고되고 있다. 본 연구에서는 유리기판 위에 제작된 탄소나노튜브 전계방출원의 수명 향상을 위하여 금속바인더와 후속 열처리법의 변화에 따른 전계방출 안정성을 분석하였다. 금속바인더는 접합층/ 접착층(soldering layer/ adhesive layer)으로 구성되어 있으며, 일반적인 소다석회유리(soda-lime glass)에 스퍼터(DC magnetron sputtering system)를 이용하여 증착하였다. 접착층은 유리기판과 접합층의 접착력 향상을 위해 사용되며, 접합층은 기판과 탄소나노튜브 전계방출원을 접합하는 역할과 전계방출 측정시 전극이 되기 때문에 우수한 전기 전도성과 내산화성을 필요로 한다. 본 실험에서는 일반적으로 유리기판과 접착력이 좋다고 알려진 Cr, Ti, Ni, Mo을 접착층으로 사용하였으며, 접합성과 전기전도성, 내산화성이 뛰어난 귀금속 계열의 금속을 접합층으로 사용하였다. 탄소나노튜브를 1,2-디클로로에탄(1,2-dichloroethane, DCE)에 분산시킨 용액을 스프레이방법을 이용하여 증착시켰으며, 후속 열처리 방법을 통하여 접합층과 결합시켰다. 금속바인더와 후속 열처리법의 변화에 따른 접착력과 표면형상(morphology)의 변화를 주사전자현미경(scanning electron microscopy)를 이용하여 분석하였으며, 다이오드 타입에 디씨 바이어스(DC bias)를 사용하여 전계방출특성을 측정하였다[1,2].

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.277-277
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• 2010

The capacity of the carbonaceous materials reached ca. $350\;mAhg^{-1}$ which is close to theorestical value of the carbon intercalation composition $LiC_6$, resulting in a relatively low volumetric Li capacity. Notwithstanding the capacities of carbon, it will not adjust well to the need so future devices. Silicon shows the highest gravimetric capacities (up to $4000\;mAhg^{-1}$ for $Li_{21}Si_5$). Although Si is the most promising of the next generation anodes, it undergoes a large volume change during lithium insertion and extraction. It results in pulverization of the Si and loss of electrical contact between the Si and the current collector during the lithiation and delithiation. Thus, its capacity fades rapidly during cycling. We focused on electrode materials in the multiphase form which were composed of two metal compounds to reduce the volume change in material design. A combination of electrochemically amorphous active material in an inert matrix (Si-M) has been investigated for use as negative electrode materials in lithium ion batteries. The matrix composited of Si-M alloys system that; active material (Si)-inactive material (M) with Li; M is a transition metal that does not alloy with Li with Li such as Ti, V or Mo. We fabricated and tested a broad range of Si-M compositions. The electrodes were sputter-deposited on rough Cu foil. Electrochemical, structural, and compositional characterization was performed using various techniques. The structure of Si-M alloys was investigated using X-ray Diffractometer (XRD) and transmission electron microscopy (TEM). Surface morphologies of the electrodes are observed using a field emission scanning electron microscopy (FESEM). The electrochemical properties of the electrodes are studied using the cycling test and electrochemical impedance spectroscopy (EIS). It is found that the capacity is strongly dependent on Si content and cycle retention is also changed according to M contents. It may be beneficial to find materials with high capacity, low irreversible capacity and that do not pulverize, and that combine Si-M to improve capacity retention.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.195-195
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• 2016

Titanium and its alloys are widely used as implants in orthopedics, dentistry and cardiology due to their outstanding properties, such as high strength, high level of hemocompatibility and enhanced biocompatibility. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element, such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}-stabilizer$ and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Silicon (Si) and magnesium (Mg) has a beneficial effect on bone. Si in particular has been found to be essential for normal bone and cartilage growth and development. In vitro studies have shown that Mg plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. The aim of this study is to research Si and Mg doped hydroxyapatite film formation by plasma electrolytic oxidation. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. Each alloy was anodized in solution containing typically 0.15 M calcium acetate monohydrate + 0.02 M calcium glycerophosphate at room temperature. A direct current power source was used for the process of anodization. Anodized alloys was prepared using 270V~300V anodization voltage at room. A Si and Mg coating was produced by RF-magnetron sputtering system. RF power of 100W was applied to the target for 1h at room temperature. The microstructure, phase and composition of Si and Mg coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.65-65
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• 2012

Copper zinc tin sulfide ($Cu_2ZnSnS_4$, CZTS) is a very promising material as a low cost absorber alternative to other chalcopyrite-type semiconductors based on Ga or In because of the abundant and economical elements. In addition, CZTS has a band-gap energy of 1.4~1.5eV and large absorption coefficient over ${\sim}10^4cm^{-1}$, which is similar to those of $Cu(In,Ga)Se_2$(CIGS) regarded as one of the most successful absorber materials for high efficient solar cell. Most previous works on the fabrication of CZTS thin films were based on the vacuum deposition such as thermal evaporation and RF magnetron sputtering. Although the vacuum deposition has been widely adopted, it is quite expensive and complicated. In this regard, the solution processes such as sol-gel method, nanocrystal dispersion and hybrid slurry method have been developed for easy and cost-effective fabrication of CZTS film. Among these methods, the hybrid slurry method is favorable to make high crystalline and dense absorber layer. However, this method has the demerit using the toxic and explosive hydrazine solvent, which has severe limitation for common use. With these considerations, it is highly desirable to develop a robust, easily scalable and relatively safe solution-based process for the fabrication of a high quality CZTS absorber layer. Here, we demonstrate the fabrication of a high quality CZTS absorber layer with a thickness of 1.5~2.0 ${\mu}m$ and micrometer-scaled grains using two different non-vacuum approaches. The first solution-processing approach includes air-stable non-toxic solvent-based inks in which the commercially available precursor nanoparticles are dispersed in ethanol. Our readily achievable air-stable precursor ink, without the involvement of complex particle synthesis, high toxic solvents, or organic additives, facilitates a convenient method to fabricate a high quality CZTS absorber layer with uniform surface composition and across the film depth when annealed at $530^{\circ}C$. The conversion efficiency and fill factor for the non-toxic ink based solar cells are 5.14% and 52.8%, respectively. The other method is based on the nanocrystal dispersions that are a key ingredient in the deposition of thermally annealed absorber layers. We report a facile synthetic method to produce phase-pure CZTS nanocrystals capped with less toxic and more easily removable ligands. The resulting CZTS nanoparticle dispersion enables us to fabricate uniform, crack-free absorber layer onto Mo-coated soda-lime glass at $500^{\circ}C$, which exhibits a robust and reproducible photovoltaic response. Our simple and less-toxic approach for the fabrication of CZTS layer, reported here, will be the first step in realizing the low-cost solution-processed CZTS solar cell with high efficiency.